JPS6362233A - 反応性イオンエツチング装置 - Google Patents

反応性イオンエツチング装置

Info

Publication number
JPS6362233A
JPS6362233A JP61205854A JP20585486A JPS6362233A JP S6362233 A JPS6362233 A JP S6362233A JP 61205854 A JP61205854 A JP 61205854A JP 20585486 A JP20585486 A JP 20585486A JP S6362233 A JPS6362233 A JP S6362233A
Authority
JP
Japan
Prior art keywords
wafer
stage
reaction tank
treatment
post
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61205854A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0533529B2 (2
Inventor
Norimichi Mitomi
三富　至道
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61205854A priority Critical patent/JPS6362233A/ja
Publication of JPS6362233A publication Critical patent/JPS6362233A/ja
Priority to US07/259,395 priority patent/US4927484A/en
Publication of JPH0533529B2 publication Critical patent/JPH0533529B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0461—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the presence of two or more transfer chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0471—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3304—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber characterised by movements or sequence of movements of transfer devices

Landscapes

  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP61205854A 1986-09-03 1986-09-03 反応性イオンエツチング装置 Granted JPS6362233A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP61205854A JPS6362233A (ja) 1986-09-03 1986-09-03 反応性イオンエツチング装置
US07/259,395 US4927484A (en) 1986-09-03 1988-10-18 Reactive ion etching appartus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61205854A JPS6362233A (ja) 1986-09-03 1986-09-03 反応性イオンエツチング装置

Publications (2)

Publication Number Publication Date
JPS6362233A true JPS6362233A (ja) 1988-03-18
JPH0533529B2 JPH0533529B2 (2) 1993-05-19

Family

ID=16513810

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61205854A Granted JPS6362233A (ja) 1986-09-03 1986-09-03 反応性イオンエツチング装置

Country Status (2)

Country Link
US (1) US4927484A (2)
JP (1) JPS6362233A (2)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01246941A (ja) * 1988-03-29 1989-10-02 Aiphone Co Ltd コンピュータ・データ通信制御方式
JPH0338051A (ja) * 1989-06-29 1991-02-19 Applied Materials Inc 半導体ウェーハのハンドリング方法及び装置
JP2004179660A (ja) * 2002-11-25 2004-06-24 Boc Group Inc:The 半導体製造システム
CN112275671A (zh) * 2020-12-25 2021-01-29 西安奕斯伟硅片技术有限公司 一种晶圆分选设备及晶圆分选方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2528708B2 (ja) * 1989-03-14 1996-08-28 富士通株式会社 半導体製造装置
DE69033663T2 (de) * 1989-08-28 2001-06-21 Hitachi, Ltd. Verfahren zur Behandlung eines Aluminium enthaltenden Musters
JP2926798B2 (ja) * 1989-11-20 1999-07-28 国際電気株式会社 連続処理エッチング方法及びその装置
US5482607A (en) * 1992-09-21 1996-01-09 Nissin Electric Co., Ltd. Film forming apparatus
US5662782A (en) * 1994-05-26 1997-09-02 Seiko Epson Corporation Method and apparatus for adjusting a resonance frequency of piezoelectric elements
US6176667B1 (en) * 1996-04-30 2001-01-23 Applied Materials, Inc. Multideck wafer processing system
JP4021125B2 (ja) * 2000-06-02 2007-12-12 東京エレクトロン株式会社 ウェハ移載装置の装置ユニット接続時に用いられるレールの真直性保持装置
US6977014B1 (en) 2000-06-02 2005-12-20 Novellus Systems, Inc. Architecture for high throughput semiconductor processing applications
US6860965B1 (en) * 2000-06-23 2005-03-01 Novellus Systems, Inc. High throughput architecture for semiconductor processing
US6936551B2 (en) * 2002-05-08 2005-08-30 Applied Materials Inc. Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
US20040069409A1 (en) * 2002-10-11 2004-04-15 Hippo Wu Front opening unified pod door opener with dust-proof device
US7214027B2 (en) * 2003-10-16 2007-05-08 Varian Semiconductor Equipment Associates, Inc. Wafer handler method and system
US20050205210A1 (en) * 2004-01-06 2005-09-22 Devine Daniel J Advanced multi-pressure workpiece processing
US8668422B2 (en) * 2004-08-17 2014-03-11 Mattson Technology, Inc. Low cost high throughput processing platform
US8741096B2 (en) * 2006-06-29 2014-06-03 Wonik Ips Co., Ltd. Apparatus for semiconductor processing
CN102386272B (zh) * 2010-09-03 2014-04-30 上海凯世通半导体有限公司 真空传输制程设备及方法
CN102403249B (zh) * 2010-09-07 2014-03-05 上海凯世通半导体有限公司 真空传输制程设备及方法
CN102403392B (zh) * 2010-09-07 2014-01-29 上海凯世通半导体有限公司 真空制程设备、真空传输制程设备及方法
CN102446787B (zh) * 2010-09-30 2014-01-22 上海凯世通半导体有限公司 真空传输制程设备及方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60102744A (ja) * 1983-11-09 1985-06-06 Hitachi Ltd 真空処理装置
JPS61196537A (ja) * 1985-02-27 1986-08-30 Hitachi Ltd 真空処理装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037129A (ja) * 1983-08-10 1985-02-26 Hitachi Ltd 半導体製造装置
JPH06105742B2 (ja) * 1983-11-28 1994-12-21 株式会社日立製作所 真空処理方法及び装置
JPS60249328A (ja) * 1984-05-25 1985-12-10 Kokusai Electric Co Ltd 半導体ウエ−ハ用ドライエツチング・化学気相生成装置
US4693777A (en) * 1984-11-30 1987-09-15 Kabushiki Kaisha Toshiba Apparatus for producing semiconductor devices
US4687542A (en) * 1985-10-24 1987-08-18 Texas Instruments Incorporated Vacuum processing system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60102744A (ja) * 1983-11-09 1985-06-06 Hitachi Ltd 真空処理装置
JPS61196537A (ja) * 1985-02-27 1986-08-30 Hitachi Ltd 真空処理装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01246941A (ja) * 1988-03-29 1989-10-02 Aiphone Co Ltd コンピュータ・データ通信制御方式
JPH0338051A (ja) * 1989-06-29 1991-02-19 Applied Materials Inc 半導体ウェーハのハンドリング方法及び装置
JP2004179660A (ja) * 2002-11-25 2004-06-24 Boc Group Inc:The 半導体製造システム
CN112275671A (zh) * 2020-12-25 2021-01-29 西安奕斯伟硅片技术有限公司 一种晶圆分选设备及晶圆分选方法

Also Published As

Publication number Publication date
US4927484A (en) 1990-05-22
JPH0533529B2 (2) 1993-05-19

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