JPS6362805B2 - - Google Patents

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Publication number
JPS6362805B2
JPS6362805B2 JP20106283A JP20106283A JPS6362805B2 JP S6362805 B2 JPS6362805 B2 JP S6362805B2 JP 20106283 A JP20106283 A JP 20106283A JP 20106283 A JP20106283 A JP 20106283A JP S6362805 B2 JPS6362805 B2 JP S6362805B2
Authority
JP
Japan
Prior art keywords
amorphous alloy
magnetic
alloy film
magnetic head
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP20106283A
Other languages
Japanese (ja)
Other versions
JPS6095714A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP58201062A priority Critical patent/JPS6095714A/en
Publication of JPS6095714A publication Critical patent/JPS6095714A/en
Publication of JPS6362805B2 publication Critical patent/JPS6362805B2/ja
Granted legal-status Critical Current

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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/187Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features
    • G11B5/21Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features the pole pieces being of ferrous sheet metal or other magnetic layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/31Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

(産業上の利用分野) 本発明は磁気録音、再生装置に利用する磁気ヘ
ツドの製造方法に関するものである。 (従来例の構成とその問題点) 従来、VTR等の狭トラツク磁気ヘツドを製作
する際には、第1図で示したような方法がとられ
ている。同図aにおいて、1はセンダストまたは
非晶質合金よりなるヘツドコア部で、ガラスまた
はセラミツクよりなる基板2でサンドイツチされ
ている。3はギヤツプ面で、この上にはスパツタ
リング法などで所望のギヤツプ長となるSiO2
どの非磁性体が被着されている。4は棒状の低融
点ガラスであり、ヘツドコア両面より圧力を加え
ながら温度をあげ、これを軟化させて接合部4′
を形成し、磁気ギヤツプ部を形成し、同図bで示
したような磁気ヘツドを得る。 この製造方法の問題点は、機械的に両コアを押
し当てて接着し、磁気ギヤツプを形成するため、
ギヤツプ面3の平面性が少しでも悪いと、所望の
ギヤツプ長が得られないだけでなく、接着強度も
低下し、ガラス接合部4′に、ひびわれが生じる
原因となるという点である。なお、実際のVTR
磁気ヘツドギヤツプ部はアジマス角を有するた
め、ギヤツプ面3は約10゜の傾斜角を有しており、
横から機械的に押すとコアずれがおき、左右のト
ラツクずれが生じやすい欠点があつた。 (発明の目的) 本発明の磁気ヘツド製造方法は、従来例の欠点
を解消し、接着工程をほとんど用いず、磁気ギヤ
ツプ部と、ヘツドコア部を同時に形成することを
可能にする方法を提供することである。 (発明の構成) 本発明の磁気ヘツド製造方法は、スパツタリン
グ法または蒸着法などにより、磁気ヘツドのコア
材となる非晶質合金を作成する際に、レーザー光
を同時に照射して、その一部を選択的に酸化させ
ながら堆積させ、非晶質合金内部に非磁性の酸化
物層を有する合金膜を作成し、この酸化物層を磁
気ギヤツプとして用いることにより磁気ヘツドを
製作するものである。 (発明の実施例) 本発明の一実施例を第2図ないし第4図により
説明する。 第2図はスパツタリング装置としてレーザーを
用いた磁気ヘツドコアの製造方法を示す。同図a
において、11はカソード、12は非晶質合金作
成用ターゲツト、13は水冷される基板ホルダ
ー、14は基板、15はベルジヤー、16はレー
ザー光源、17は集光装置およびレーザー光取入
れ窓、18はレーザー光を示す。基板14は同図
bで示すように、あらかじめ巻線窓14′が設け
られており、レーザー光18が所望の位置にあた
るようホルダー13上に固定されている。ベルジ
ヤー15内を排気し、Arガスを導入し、ターゲ
ツト12をスパツターして基板14上に非晶質合
金膜を形成する。本発明では、この時レーザー1
8を同時に照射し、非晶質合金膜の一部を選択的
に酸化させながら膜を基板上に形成し、得られた
膜の断面が、第3図aで示すような構造となるよ
うにする。図において21は基板、22は非晶質
合金膜、23はレーザー光照射により生じた酸化
物層、24はレーザー光である。第2図および第
3図においてレーザー光は基板面方向に対して角
度θだけ傾けてあるが、これはVTRヘツドの場
合のアジマス角と呼ばれ、約10゜の傾きを磁気ギ
ヤツプにつける必要があるためである。 第3図bは同図aの22および23で示した部
分の代表的な60Hzにおける交流B・H曲線を示し
ている。同図aの非晶質合金膜22は下記のよう
な組成のものを用いれば同図bの32で示すよう
な優れた軟磁気特性を示し、酸化すると非磁性に
なり、そのB・H曲線は同図bの33で示すよう
な特性を示し、磁気ヘツドのギヤツプ部の役割を
果たす。 なお、このような目的に適する非晶質合金膜に
は次のような組成のものが適している。 CoaMa′TbXcRd ……(1) ただし、M,T,XおよびRはそれぞれつぎに
示す各元素群より選ばれる一種または二種以上の
元素で、 M:Fe,Ni,Mn,Cr,Mo,W T:Ti,Zr,Hf,Nb,Ta X:Si,B,C R:Yおよび希土類元素 であり、a,a′,b,c,dは各元素の原子%を
示し、それぞれ 70≦a≦95 0≦a′≦10 0≦b≦20 0≦c≦30 0≦d≦5 ……(2) であり、かつ a+a′+b+c+d=100 5≦b+c≦30 ……(3) である。 式(1)、(2)においてCoを主成分として含む理由
は、磁歪零系非晶質合金が得られるほか、Feと
異なりレーザー光照射によりベルジヤー内の残留
O2ガスと反応酸化したのち非磁性化しやすいた
めである。またNiは飽和磁化が小さく、ヘツド
コア材としては不向きである。 Coを主成分としてもその原子%が95%以上と
なると非晶質化が困難になり、70%以下では合金
膜の飽和磁化が、磁気ヘツドコア用としては小さ
すぎるので70≦a≦95が望ましい。(1)式中Mは磁
歪の調節等に用いる添加物の代表的なものである
が、あまり多量に含むと、Fe,Mnの場合は磁歪
が大幅に正にずれるし、Ni,Cr,Mo,Wの場合
は飽和磁化を劣化させるので、添加量は10原子%
を越えないことが望ましい。また(1)式中RはYお
よび希土類元素で、これは結晶化温度を上昇させ
るのに有効であるが、添加量が5原子%を越える
と軟磁気特性を劣化させるのでd≦5が望まし
い。ただしM,Rは非晶質形成には本質的な元素
ではないので、これらは必ずしも構成元素として
含む必要はない。(1)式中TとXは非晶質形成能を
もつ元素であり、いずれか一方、あるいは両者を
原子%で5%以上含む必要がある。またTの場合
は原子%で20%を越えると、また、Xの場合は30
%を越えると、飽和磁化が大幅に減少して磁気ヘ
ツドコア材として不適当になるので、b≦20、c
≦30であることが望ましい。 第3図aのような形で得られたものは、第4図
で示したような工程を加えることにより、簡単に
磁気ヘツドを作ることができる。図において41
は上板、42は非晶質合金膜、43は基板、4
1′および43′は巻線穴、44は磁気ギヤツプと
なる酸化物層、45は巻き線である。上板41と
合金膜面42は樹脂または低融点ガラスで接着を
行なう。 以上スパツタリング装置を用いた場合について
述べたが蒸着装置を用いた場合も全く同様であ
る。 以下に具体的な材質、寸法等を適用した実施例
を示す。 (1) 実施例1 水冷された基板ホルダーに取付けられた巻き線
穴を有するガラス基板上に、Arガス圧4×
10-2Torrで厚さ30μmの非晶質合金膜
Co80Sm2Mn6Si10B12をスパツタリング法により
形成する。このとき同時に波長0.8μm、出力5m
Wの半導体レーザーを用いて、第2図に示したよ
うに基板上の磁気ギヤツプの位置に連続的に照射
しながら非晶質合金膜を形成する。なおレーザー
光のビーム径は0.8μmに絞り、レーザー装置を磁
気ギヤツプの深さ方向に100μm程度往復運動さ
せながら非晶質合金膜の形成をする、ここで得ら
れた非晶質合金膜はレーザー光の照射された部分
だけ黒く酸化し、その層の幅は1.0μmである。こ
のようにして得られたものを第4図で示すように
接合、巻線をして磁気ヘツドを完成する。この有
効磁気ギヤツプは測定の結果1.0μmであつた。 (2) 実施例2 水冷された基板ホルダーに取り付けられた巻き
線穴を有する非磁性フエライト基板上に、Arガ
ス圧4×10-2Torrで厚さ30μmの非晶質合金膜
Co80Mo5Ti15をスパツタリング法により形成し、
この際、同時に波長0.8μm、出力10mWの半導体
レーザーを用いて、ビーム幅0.8μm、長さ10μm
のレーザー光を照射しながら上記実施例1と同様
にビーム幅がギヤツプ長方向に、ビームの長さ方
向がギヤツプの深さ方向に一致するようにして非
晶質合金膜の作成を行なう。この場合、連続的に
レーザー光を照射すると、酸化層の幅がぼやけて
広くなるので、照射パルス幅1/100秒、パルス数
10/秒として照射を行なう。得られる酸化層の
幅、すなわち磁気ギヤツプ長は光学的には0.6μm
である。得られた非晶質合金膜を用いて、上記実
施例1と同様に磁気ヘツドを完成し、有効磁気ギ
ヤツプを測定した結果は0.7μmであつた。 (3) 実施例3 実施例2と同様な方法で、巻き線穴を有するガ
ラス基板上にCo86Mn2Nb9Zr3の非晶質合金膜を
スパツタリング法により形成し、同時に波長0.4μ
m、出力100mWのヘリウムカドミウムレーザー
を用い、ビーム径を0.4μmにしぼり、照射パルス
幅1/200秒、パルス数10/秒として上記実施例2
と同じ操作により厚さ30μmの非晶質合金膜を形
成する。得られた膜の酸化層の幅は光学的には
0.3μmである。この膜を用いて上記実施例1と同
様に磁気ヘツドを完成する。この有効磁気ギヤツ
プ長は測定の結果0.3μmであつた。 実施例3で得られた磁気ヘツド50個と、第1図
で示した従来例製作方法によつて製作した磁気ヘ
ツド50個の比較試験の結果を表に示す。
(Industrial Application Field) The present invention relates to a method of manufacturing a magnetic head used in a magnetic recording and reproducing device. (Structure of a conventional example and its problems) Conventionally, when manufacturing a narrow track magnetic head for a VTR or the like, a method as shown in FIG. 1 has been used. In FIG. 1A, numeral 1 denotes a head core made of sendust or an amorphous alloy, which is sandwiched with a substrate 2 made of glass or ceramic. Reference numeral 3 represents a gap surface, on which a non-magnetic material such as SiO 2 is deposited to provide a desired gap length using a sputtering method or the like. 4 is a rod-shaped low melting point glass, which is heated while applying pressure from both sides of the head core to soften it and form the joint 4'.
A magnetic gap portion is formed to obtain a magnetic head as shown in FIG. The problem with this manufacturing method is that both cores are mechanically pressed and bonded together to form a magnetic gap.
If the flatness of the gap surface 3 is even slightly poor, not only will the desired gap length not be obtained, but the adhesive strength will also decrease, causing cracks to occur in the glass joint 4'. In addition, the actual VTR
Since the magnetic head gap portion has an azimuth angle, the gap surface 3 has an inclination angle of approximately 10°.
When pressed mechanically from the side, core misalignment occurs, which has the disadvantage that left and right track misalignment tends to occur. (Objective of the Invention) It is an object of the present invention to provide a method for manufacturing a magnetic head that eliminates the drawbacks of the conventional method and allows the magnetic gap portion and the head core portion to be formed simultaneously without using much of an adhesion process. It is. (Structure of the Invention) The magnetic head manufacturing method of the present invention involves simultaneously irradiating a laser beam when creating an amorphous alloy that will become the core material of the magnetic head by a sputtering method or a vapor deposition method. An alloy film having a nonmagnetic oxide layer inside an amorphous alloy is created by selectively oxidizing and depositing the amorphous alloy, and this oxide layer is used as a magnetic gap to manufacture a magnetic head. (Embodiment of the Invention) An embodiment of the present invention will be described with reference to FIGS. 2 to 4. FIG. 2 shows a method of manufacturing a magnetic head core using a laser as a sputtering device. Figure a
, 11 is a cathode, 12 is a target for forming an amorphous alloy, 13 is a water-cooled substrate holder, 14 is a substrate, 15 is a bell jar, 16 is a laser light source, 17 is a condenser and a laser light intake window, and 18 is a Showing laser light. As shown in FIG. 2B, the substrate 14 is provided with a winding window 14' in advance and is fixed on the holder 13 so that the laser beam 18 hits a desired position. The inside of the bell gear 15 is evacuated, Ar gas is introduced, and the target 12 is sputtered to form an amorphous alloy film on the substrate 14. In the present invention, at this time, the laser 1
8 was simultaneously irradiated to form a film on the substrate while selectively oxidizing a part of the amorphous alloy film, so that the cross section of the obtained film had a structure as shown in Figure 3a. do. In the figure, 21 is a substrate, 22 is an amorphous alloy film, 23 is an oxide layer produced by laser beam irradiation, and 24 is a laser beam. In Figures 2 and 3, the laser beam is tilted at an angle θ with respect to the substrate surface direction, but this is called the azimuth angle in the case of a VTR head, and it is necessary to tilt the magnetic gap by approximately 10°. This is because there is. FIG. 3b shows a typical AC B/H curve at 60 Hz in the portions indicated by 22 and 23 in FIG. 3a. If the amorphous alloy film 22 in the figure a has the following composition, it will exhibit excellent soft magnetic properties as shown by 32 in the figure b, and when oxidized, it will become non-magnetic, and its BH curve exhibits the characteristics shown at 33 in Figure b, and plays the role of the gap portion of the magnetic head. Note that an amorphous alloy film suitable for such a purpose has the following composition. Co a M a ′T b X c R d ...(1) However, M, T, X, and R are each one or more elements selected from the following element groups, and M: Fe, Ni , Mn, Cr, Mo, W T: Ti, Zr, Hf, Nb, Ta X: Si, B, CR R: Y and rare earth elements, a, a', b, c, d are atoms of each element 70≦a≦95 0≦a′≦10 0≦b≦20 0≦c≦30 0≦d≦5 …(2) and a+a′+b+c+d=100 5≦b+c≦30 ...(3). The reason why Co is included as a main component in formulas (1) and (2) is that in addition to obtaining a zero-magnetostrictive amorphous alloy, unlike Fe, the residual content in the bell jar can be removed by laser light irradiation.
This is because it easily becomes nonmagnetic after reacting with O 2 gas and oxidizing. Additionally, Ni has low saturation magnetization and is not suitable as a head core material. Even if Co is the main component, if its atomic percent is 95% or more, it becomes difficult to make it amorphous, and if it is less than 70%, the saturation magnetization of the alloy film is too small for magnetic head cores, so 70≦a≦95 is desirable. . In formula (1), M is a typical additive used to adjust magnetostriction, but if it is included in too large a quantity, the magnetostriction will shift significantly positive in the case of Fe and Mn, and in the case of Ni, Cr, Mo. , W deteriorates the saturation magnetization, so the amount added is 10 atomic%.
It is desirable not to exceed. In formula (1), R represents Y and a rare earth element, which is effective in increasing the crystallization temperature, but if the amount added exceeds 5 at%, the soft magnetic properties will deteriorate, so it is desirable that d≦5. . However, since M and R are not essential elements for forming an amorphous state, they do not necessarily need to be included as constituent elements. In the formula (1), T and X are elements capable of forming an amorphous state, and it is necessary to contain at least 5 atomic % of either or both of them. In addition, in the case of T, if it exceeds 20% in atomic percent, and in the case of X, it exceeds 30%.
%, the saturation magnetization will decrease significantly and the material will become unsuitable as a magnetic head core material, so b≦20, c
It is desirable that it be ≦30. A magnetic head obtained in the form shown in FIG. 3a can be easily manufactured by adding the steps shown in FIG. 4. 41 in the figure
4 is an upper plate, 42 is an amorphous alloy film, 43 is a substrate, 4
1' and 43' are winding holes, 44 is an oxide layer serving as a magnetic gap, and 45 is a winding wire. The upper plate 41 and the alloy film surface 42 are bonded using resin or low melting point glass. The case where a sputtering device is used has been described above, but the same applies to the case where a vapor deposition device is used. Examples to which specific materials, dimensions, etc. are applied are shown below. (1) Example 1 Ar gas pressure of 4 ×
30 μm thick amorphous alloy film at 10 -2 Torr
Co 80 Sm 2 Mn 6 Si 10 B 12 is formed by a sputtering method. At this time, the wavelength is 0.8 μm and the output is 5 m.
Using a W semiconductor laser, an amorphous alloy film is formed while continuously irradiating the magnetic gap position on the substrate as shown in FIG. The beam diameter of the laser beam is focused to 0.8 μm, and the amorphous alloy film is formed by reciprocating the laser device about 100 μm in the depth direction of the magnetic gap. Only the areas exposed to light oxidize black, and the width of this layer is 1.0 μm. The thus obtained product is joined and wound as shown in FIG. 4 to complete the magnetic head. This effective magnetic gap was measured to be 1.0 μm. (2) Example 2 A 30 μm thick amorphous alloy film was deposited on a non-magnetic ferrite substrate with winding holes attached to a water-cooled substrate holder under an Ar gas pressure of 4×10 -2 Torr.
Co 80 Mo 5 Ti 15 is formed by sputtering method,
At this time, a semiconductor laser with a wavelength of 0.8 μm and an output of 10 mW was used to create a beam with a beam width of 0.8 μm and a length of 10 μm.
While irradiating the laser beam, an amorphous alloy film is formed in the same manner as in Example 1 so that the beam width is aligned with the gap length direction and the beam length direction is aligned with the gap depth direction. In this case, if the laser beam is continuously irradiated, the width of the oxide layer will become blurred and widened, so the irradiation pulse width is 1/100 seconds, the number of pulses is
Irradiation is performed at 10/sec. The width of the resulting oxide layer, that is, the magnetic gap length, is optically 0.6 μm.
It is. Using the obtained amorphous alloy film, a magnetic head was completed in the same manner as in Example 1, and the effective magnetic gap was measured to be 0.7 μm. (3) Example 3 In the same manner as in Example 2, an amorphous alloy film of Co 86 Mn 2 Nb 9 Zr 3 was formed by sputtering on a glass substrate having a winding hole, and at the same time a wavelength of 0.4μ was applied.
Example 2 above using a helium cadmium laser with an output of 100 mW, a beam diameter of 0.4 μm, an irradiation pulse width of 1/200 seconds, and a pulse number of 10/second.
An amorphous alloy film with a thickness of 30 μm is formed by the same operation as above. The width of the oxide layer of the obtained film is optically
It is 0.3 μm. Using this film, a magnetic head is completed in the same manner as in Example 1 above. The effective magnetic gap length was measured to be 0.3 μm. The table shows the results of a comparative test between 50 magnetic heads obtained in Example 3 and 50 magnetic heads manufactured by the conventional manufacturing method shown in FIG.

【表】【table】

【表】 なお従来例に用いたガラス板、非晶質合金は、
実施例3と同じものを用い、ギヤツプ材としては
SiO2と低融点ガラスを2層にしたものを使用し
た。 (発明の効果) 本発明の磁気ヘツド製造方法は、極めて高精度
な磁気ギヤツプを有する磁気ヘツドの製造に有効
な方法であるばかりでなく、コア部を作ると同時
に磁気ギヤツプも作る方法であるため製造工程が
簡略化され原価も下がるほか、アジマス角を有す
る磁気ギヤツプも簡単に作成される等の種々の効
果がある。
[Table] The glass plate and amorphous alloy used in the conventional example are as follows:
The same material as in Example 3 was used, and the gap material was
Two layers of SiO 2 and low melting point glass were used. (Effects of the Invention) The magnetic head manufacturing method of the present invention is not only an effective method for manufacturing a magnetic head having an extremely high-precision magnetic gap, but also a method for manufacturing the magnetic gap at the same time as making the core part. In addition to simplifying the manufacturing process and lowering the cost, there are various other effects such as the ability to easily create a magnetic gap with an azimuth angle.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来例の磁気ヘツド製造方法の説明
図、第2図は本発明の一実施例による磁気ヘツド
のコア部の製造方法説明図、第3図は同断面図お
よびB・H特性図、第4図は同磁気ヘツド製造工
程の説明図である。 1…ヘツドコア部、2…基板、3…ギヤツプ
面、4…低融点ガラス、11…カソード、12…
ターゲツト、13…基板ホルダー、14…基板、
14′…巻線窓、15…ベルジヤー、16…レー
ザー光源、17…取入れ窓、18…レーザー光、
21…基板、22…非晶質合金膜、23…酸化物
層、24…レーザー光、32,33…B・H曲
線、41…上板、42…非晶質合金膜、43…基
板、41′,43′…巻き線穴、44…酸化物層、
45…巻き線。
FIG. 1 is an explanatory diagram of a conventional method for manufacturing a magnetic head, FIG. 2 is an explanatory diagram of a method for manufacturing a core portion of a magnetic head according to an embodiment of the present invention, and FIG. 3 is a sectional view of the same and a B/H characteristic diagram. , and FIG. 4 are explanatory diagrams of the manufacturing process of the same magnetic head. DESCRIPTION OF SYMBOLS 1... Head core part, 2... Substrate, 3... Gap surface, 4... Low melting point glass, 11... Cathode, 12...
Target, 13...Substrate holder, 14...Substrate,
14'...Window window, 15...Belgear, 16...Laser light source, 17...Intake window, 18...Laser light,
21...Substrate, 22...Amorphous alloy film, 23...Oxide layer, 24...Laser light, 32, 33...BH curve, 41...Top plate, 42...Amorphous alloy film, 43...Substrate, 41 ', 43'... Winding hole, 44... Oxide layer,
45...Wound wire.

Claims (1)

【特許請求の範囲】 1 スパツタリング法、または蒸着法により磁気
ヘツドのコア部とする軟磁性非晶質合金膜を基板
上に形成する際に、同時にレーザー光を磁気ギヤ
ツプを形成する所定の位置に照射してその位置の
軟磁性非晶質合金膜を酸化し、磁気ヘツドのコア
部とギヤツプ部とを同時に形成することを特徴と
する磁気ヘツドの製造方法。 2 前記非晶質合金膜として、次式で表わされる
組成を有するものを用いることを特徴とする特許
請求の範囲第1項記載の磁気ヘツドの製造方法。 CoaMa′TbXcRd ただし、M,T,X,Rはそれぞれつぎに示す
各元素群より選ばれる一種または二種以上の元素
であり、 M:Fe,Ni,Mn,Cr,Mo,W T:Ti,Zr,Hf,Nb,Ta X:Si,B,C R:Yおよび希土類元素 またa,a′,b,c,dは各元素の原子%を示
し、それぞれ 70≦a≦95 0≦a′≦10 0≦b≦20 0≦c≦30 0≦d≦5 であり、かつ a+a′+b+c+d=100 5≦b+c≦30 である。
[Claims] 1. When forming a soft magnetic amorphous alloy film on a substrate to form the core of a magnetic head by sputtering or vapor deposition, a laser beam is simultaneously applied to a predetermined position where a magnetic gap is formed. 1. A method for manufacturing a magnetic head, which comprises irradiating the soft magnetic amorphous alloy film to oxidize the soft magnetic amorphous alloy film at that location, thereby simultaneously forming a core portion and a gap portion of the magnetic head. 2. The method of manufacturing a magnetic head according to claim 1, wherein the amorphous alloy film has a composition represented by the following formula. Co a M a ′T b X c R dHowever, M, T, , Mo, W T: Ti, Zr, Hf, Nb, Ta ≦a≦95 0≦a′≦10 0≦b≦20 0≦c≦30 0≦d≦5, and a+a′+b+c+d=100 5≦b+c≦30.
JP58201062A 1983-10-28 1983-10-28 Manufacture of magnetic head Granted JPS6095714A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58201062A JPS6095714A (en) 1983-10-28 1983-10-28 Manufacture of magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58201062A JPS6095714A (en) 1983-10-28 1983-10-28 Manufacture of magnetic head

Publications (2)

Publication Number Publication Date
JPS6095714A JPS6095714A (en) 1985-05-29
JPS6362805B2 true JPS6362805B2 (en) 1988-12-05

Family

ID=16434746

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58201062A Granted JPS6095714A (en) 1983-10-28 1983-10-28 Manufacture of magnetic head

Country Status (1)

Country Link
JP (1) JPS6095714A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020100602A1 (en) * 2018-11-13 2020-05-22 日本電信電話株式会社 Blockchain system, approval terminal, user terminal, history management method, and history management program

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62145522A (en) * 1985-12-20 1987-06-29 Hitachi Ltd thin film magnetic head

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020100602A1 (en) * 2018-11-13 2020-05-22 日本電信電話株式会社 Blockchain system, approval terminal, user terminal, history management method, and history management program

Also Published As

Publication number Publication date
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