JPH03132006A - Multilayer magnetic film and magnetic head using this film - Google Patents

Multilayer magnetic film and magnetic head using this film

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Publication number
JPH03132006A
JPH03132006A JP26892389A JP26892389A JPH03132006A JP H03132006 A JPH03132006 A JP H03132006A JP 26892389 A JP26892389 A JP 26892389A JP 26892389 A JP26892389 A JP 26892389A JP H03132006 A JPH03132006 A JP H03132006A
Authority
JP
Japan
Prior art keywords
film
magnetic
multilayer
magnetic film
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP26892389A
Other languages
Japanese (ja)
Inventor
Hitoshi Nakamura
斉 中村
Toshio Kobayashi
俊雄 小林
Ryoichi Nakatani
亮一 中谷
Takayuki Kumasaka
登行 熊坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP26892389A priority Critical patent/JPH03132006A/en
Publication of JPH03132006A publication Critical patent/JPH03132006A/en
Pending legal-status Critical Current

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00Thin magnetic films, e.g. of one-domain structure
    • H01F10/32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は高飽和磁束密度、高透磁率を有する多層磁性膜
に関し、特に磁気ディスク装置やVTRなどに用いられ
る磁気ヘッドや磁気ヘッドのコア材に適した熱安定性の
高い多層磁性膜に関する。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a multilayer magnetic film having high saturation magnetic flux density and high magnetic permeability, and particularly to magnetic heads used in magnetic disk drives, VTRs, etc., and core materials of magnetic heads. This invention relates to a multilayer magnetic film with high thermal stability suitable for.

〔従来の技術〕[Conventional technology]

磁気記録の高密度化に伴い、高保磁力媒体にも十分な書
き込みが可能なM I G (Metal in Ga
p)ヘッドが最近注目されている。MIGヘッドはガラ
スボンディングという高温プロセスを必要とするため、
熱安定性の高い(熱処理によって軟磁気特性が劣化しな
い)磁性膜が要求される。MIGヘッドに用いられる比
較的熱安定性の高い磁性膜としてはCo系の非晶質合金
、センダスト合金さらには特開昭62−210607に
示されている(Fe。
With the increasing density of magnetic recording, Metal in Ga
p) Heads have been attracting attention recently. Because MIG heads require a high-temperature process called glass bonding,
A magnetic film with high thermal stability (soft magnetic properties are not degraded by heat treatment) is required. Magnetic films with relatively high thermal stability used in MIG heads include Co-based amorphous alloys, Sendust alloys, and even Fe.

Co、Ni)MNで表されるような窒素を含む磁性合金
などが知られている。ここで、MはZr。
Magnetic alloys containing nitrogen, such as Co, Ni)MN, are known. Here, M is Zr.

Nb、Ti、Mo、Ta、Hf、Cr、Wより成る群か
ら選択された金属である。
The metal is selected from the group consisting of Nb, Ti, Mo, Ta, Hf, Cr, and W.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上記従来技術に述べられているようなCo系の非晶質合
金、センダスト合金(Fe、Co、Ni)MN合金など
では、磁気ヘッドに供されるような特性を示す磁性膜の
飽和磁束密度は最大で1.4〜1.5Tである。
In Co-based amorphous alloys, Sendust alloys (Fe, Co, Ni) MN alloys, etc., as described in the above prior art, the saturation magnetic flux density of the magnetic film exhibiting characteristics suitable for use in magnetic heads is The maximum is 1.4-1.5T.

本発明の目的は、上記従来技術と同等あるいはそれ以上
の熱安定性を有し、しかもさらに優れた高飽和磁束密度
を有する磁性膜およびこれを用いた高密度磁気記録用の
磁気ヘッドを提供することにある。
An object of the present invention is to provide a magnetic film that has thermal stability equivalent to or better than that of the above-mentioned conventional technology and has an even better high saturation magnetic flux density, and a magnetic head for high-density magnetic recording using the same. There is a particular thing.

〔課題を解決するための手段〕[Means to solve the problem]

上記目的はFe系合金薄膜と窒化物系非磁性薄膜とから
多層磁性膜を構成することにより達成される。
The above object is achieved by constructing a multilayer magnetic film from an Fe-based alloy thin film and a nitride-based nonmagnetic thin film.

また1本発明の多層磁性膜を磁気ヘッドの磁気回路の少
なくとも一部に用いることにより、優れた記録再生特性
を有する磁気ヘットを得ることができる。
Further, by using the multilayer magnetic film of the present invention in at least a part of the magnetic circuit of a magnetic head, a magnetic head having excellent recording and reproducing characteristics can be obtained.

〔作用〕[Effect]

VN、TaN、TiNなどの窒化物系非磁性薄膜は膜形
成時には非晶質であり、高温で熱処理すると、準安定な
膜中の窒素が膜外に放出される。
Nitride-based nonmagnetic thin films such as VN, TaN, and TiN are amorphous when they are formed, and when heat-treated at high temperatures, metastable nitrogen in the film is released to the outside of the film.

このため、上述のようなFe系合金薄膜と窒化物系非磁
性薄膜とからなる多層磁性膜を高温で熱処理すると、F
e系合金薄膜中に窒素が拡散し、膜中に窒化物の微結晶
を析出する。このような微結晶が析出すると結晶粒成長
が抑制されるため、膜の熱安定性が向上する。また、上
記多層磁性膜は高飽和磁束密度で、しかも高透磁率を有
するため磁気ヘッドの磁気回路の一部に用いることによ
り、優れた記録再生特性を有する磁気ヘッドを得ること
ができる。
Therefore, when a multilayer magnetic film consisting of an Fe-based alloy thin film and a nitride-based nonmagnetic thin film as described above is heat-treated at high temperature, F
Nitrogen diffuses into the e-based alloy thin film and precipitates nitride microcrystals in the film. Precipitation of such microcrystals suppresses crystal grain growth, thereby improving the thermal stability of the film. Moreover, since the multilayer magnetic film has a high saturation magnetic flux density and high magnetic permeability, by using it in a part of the magnetic circuit of the magnetic head, a magnetic head with excellent recording and reproducing characteristics can be obtained.

〔実施例〕〔Example〕

以下に本発明の一実施例について1図表を参照しながら
説明する。
An embodiment of the present invention will be described below with reference to a diagram.

[実施例1コ 多層磁性膜の作製にはデュアル・イオンビームスパッタ
リング装置を用いた。スパッタリングは以下の条件で行
った。
[Example 1] A dual ion beam sputtering apparatus was used to prepare a multilayer magnetic film. Sputtering was performed under the following conditions.

イオンガス           ArArガス圧力 
      2.5X10−2Pa蒸着用イオンガン加
速電圧   1200V蒸着用イオンガンイオン電流 
  120mA基板照射用イオンガン加速電圧  20
0V基板照射用イオンガンイオン電流  40mAター
ゲット・基板間距離     127mm作製した多層
磁性膜の断面構造を第1図に示す。
Ion gas ArAr gas pressure
2.5X10-2Pa ion gun acceleration voltage for deposition 1200V ion gun ion current for deposition
120mA ion gun acceleration voltage for substrate irradiation 20
Ion gun for 0V substrate irradiation Ion current: 40 mA Target-substrate distance: 127 mm The cross-sectional structure of the prepared multilayer magnetic film is shown in FIG.

本実施例では磁性膜11として膜厚450人のFe−3
at%C合金、窒化物系非磁性薄膜12として膜厚50
人のTiN膜、基板13としてコニング社製7059ガ
ラスとホトセラムを用いた。ここで、熱処理温度が70
0℃の膜の特性評価はホトセラムで行なった。磁性膜層
数は10層で、多層磁性膜の総膜厚を約0.5μm と
した。
In this embodiment, the magnetic film 11 is made of Fe-3 with a film thickness of 450 mm.
at%C alloy, film thickness 50 as nitride-based nonmagnetic thin film 12
As the human TiN film and the substrate 13, 7059 glass manufactured by Conning Co., Ltd. and photoceram were used. Here, the heat treatment temperature is 70
Characteristic evaluation of the membrane at 0°C was performed using photoceram. The number of magnetic film layers was 10, and the total film thickness of the multilayer magnetic film was about 0.5 μm.

また、本実施例と比較するために磁性膜11として膜厚
450人のF e −3a t%C合金、窒化物系非磁
性薄膜12の変わりに膜厚50人のパーマロイ膜を用い
た磁性膜層数が10層で、総膜厚が約0.5μmの多層
膜も同時に作製した。これらの膜について熱安定性を調
べるために300〜700℃の範囲内で熱処理を行ない
軟磁気特性の変化を調べた。熱処理条件はアルゴンガス
雰囲気中で、上記の各温度に1時間保持である。実験結
果を第1表に示す。
In addition, for comparison with this example, a magnetic film using an Fe-3at%C alloy with a thickness of 450 mm as the magnetic film 11 and a permalloy film with a thickness of 50 mm instead of the nitride-based non-magnetic thin film 12 was used. A multilayer film with 10 layers and a total thickness of about 0.5 μm was also produced at the same time. In order to examine the thermal stability of these films, heat treatment was performed within the range of 300 to 700°C, and changes in soft magnetic properties were examined. The heat treatment conditions were to maintain each of the above temperatures for 1 hour in an argon gas atmosphere. The experimental results are shown in Table 1.

第  1  表 上表に示すように、Fe−3at%C/TiNの多層磁
性膜は熱処理温度が500℃以上まで優れた軟磁気特性
を示し、熱処理温度が550 ’Cにおいてでさえも膜
の比透磁率は1000以上の幀を示した。これに対し、
Fe−3at%C/NiFeの多層磁性膜では熱処理温
度が500℃までは暎の比透磁率が1000以上の値を
示しているが、熱処理温度が400℃の時に軟磁気特性
が最大値を示す。この結果、本発明により膜の熱安定性
は約100℃向上した。また、TiNによる多層化はN
iFeにより多層化を行った膜に比べて軟磁気特性が良
く、しかも熱処理により軟磁気特性がより向上すること
も分かった。本発明に用いた窒化物系非磁性薄膜は膜形
成時には非晶質であるため、凹凸の無い平坦な膜が形成
され、これがN1Faのような結晶質材料を挿入した多
層磁性膜に比べて軟磁気特性が優れている原因の一つと
も考えられる。発明では窒化物系非磁性薄膜としてTi
Nを用いたが、T a N 、 Z r N 、 N 
b N 、 A Q N 。
As shown in Table 1 above, the Fe-3at%C/TiN multilayer magnetic film exhibits excellent soft magnetic properties up to a heat treatment temperature of 500°C or higher, and even at a heat treatment temperature of 550'C, the film ratio The magnetic permeability showed a value of 1000 or more. In contrast,
In the Fe-3at%C/NiFe multilayer magnetic film, the relative magnetic permeability of the film shows a value of 1000 or more when the heat treatment temperature is up to 500℃, but the soft magnetic properties reach the maximum value when the heat treatment temperature is 400℃. . As a result, the thermal stability of the film was improved by about 100° C. according to the present invention. In addition, multilayering with TiN is N
It was also found that the soft magnetic properties are better than a film multilayered with iFe, and that the soft magnetic properties are further improved by heat treatment. Since the nitride-based nonmagnetic thin film used in the present invention is amorphous during film formation, a flat film with no unevenness is formed, which is softer than a multilayer magnetic film in which a crystalline material such as N1Fa is inserted. This is also considered to be one of the reasons for the excellent magnetic properties. In the invention, Ti is used as a nitride-based nonmagnetic thin film.
N was used, but T a N , Z r N , N
bN, AQN.

Cr 2 N + V N + Hf N 2M O2
Nなどその他の窒化物についても同様の効果が有ること
が確認された。ここでは、窒化物系非磁性薄膜の価数を
例えばTiNのように表示したが、必ずしもこのような
一定の組成の膜のみができるわけではないことは明らか
であり、本発明では代表してこのような表示の仕方を行
なった。本発明ではFe系合金薄膜に窒化物系非磁性薄
膜を挿入したため膜の飽和磁束密度はわずかに減少する
が、上記検討を行ったFe−3at%C/ T i N
多層磁性膜の飽和磁束密度は1.9Tと高い値を示した
。参考までにFe−3at%C/NiFe多層磁性膜の
飽和磁束密度は2.OTであった。
Cr 2 N + V N + Hf N 2M O2
It was confirmed that other nitrides such as N have similar effects. Here, the valence of the nitride-based nonmagnetic thin film is expressed as, for example, TiN, but it is clear that it is not necessarily possible to form only a film with such a fixed composition, and this invention is representative of this. I used a display method like this. In the present invention, a nitride-based nonmagnetic thin film is inserted into an Fe-based alloy thin film, so the saturation magnetic flux density of the film is slightly reduced.
The saturation magnetic flux density of the multilayer magnetic film was as high as 1.9T. For reference, the saturation magnetic flux density of the Fe-3at%C/NiFe multilayer magnetic film is 2. It was OT.

[実施例2] 本実施例では磁性膜11として膜厚450人のFe−3
at%C−1at%Ta合金、窒化物系非磁性薄膜12
として膜厚50人のTiN膜、基板13としてコーニン
グ社製7059ガラスとホトセラムを用いた。磁性膜層
数は10届で、多層磁性膜の総膜厚を約0.5μmとし
た。実施例1と同様に膜の熱安定性を調へるために30
0〜700℃の範囲内で熱処理を行ない軟磁気特性の変
化を調べた。第2表は測定結果で、比較のために実施例
1に示したFe−3at%C/NiFe多層膜の結果も
同時に示した。
[Example 2] In this example, the magnetic film 11 is made of Fe-3 with a film thickness of 450 mm.
at%C-1at%Ta alloy, nitride-based nonmagnetic thin film 12
As the substrate 13, 7059 glass manufactured by Corning Co., Ltd. and Photoceram were used. The number of magnetic film layers was 10, and the total film thickness of the multilayer magnetic film was about 0.5 μm. 30 to check the thermal stability of the film as in Example 1.
Heat treatment was performed within the range of 0 to 700°C to examine changes in soft magnetic properties. Table 2 shows the measurement results, and also shows the results of the Fe-3at%C/NiFe multilayer film shown in Example 1 for comparison.

第 表 上表に示すように、Fe−3at%C−1at%T a
 / T i Nの多層磁性膜は熱処理温度が600°
C以上まで優れた軟磁気特性を示し、熱処理温度が65
0℃においてでさえも瞑の比透磁率は1000という高
い値を示した。この結果から、本発明により膜の熱安定
性は150〜200℃向上した。本発明では窒化物系非
磁性薄膜としてTiNを用いたが、T a N、 Z 
r N、 N b N。
As shown in the table above, Fe-3at%C-1at%Ta
/ TiN multilayer magnetic film has a heat treatment temperature of 600°
Shows excellent soft magnetic properties up to C or higher, and heat treatment temperature is 65
Even at 0°C, the relative permeability of the material was as high as 1000. From this result, the thermal stability of the film was improved by 150 to 200°C by the present invention. In the present invention, TiN was used as the nitride-based nonmagnetic thin film, but TaN, Z
r N, N b N.

AQN、VN、I(fN、CrzN+ MO2Nなどそ
の他の窒化物についても同様の効果が有ることが確認さ
れた。また本発明では磁性膜中にTaを添加したが、T
i、V、Zr、Ntz W、Mo、B。
It was confirmed that other nitrides such as AQN, VN, I(fN, CrzN+MO2N) have similar effects.Also, in the present invention, Ta was added to the magnetic film, but T
i, V, Zr, Ntz W, Mo, B.

Cr、Hfなどの添加も本発明による多層磁性膜の熱安
定性を高めるために有効であることが分かった。第2表
において、本発明による多層磁性膜(Fe−3at%C
−1at%Ta/TiN)の軟磁気特性が700℃の熱
処理で、急激に劣化したように見えるが、これは基板に
ガラスに比べて表面性の悪い結晶化ガラスのホトセラム
を用いたことが影響しているものと思われる。ちなみに
、膜形成時の軟磁気特性はガラス基板に比べてホ1、セ
ラム基板上に形成した膜の方が悪い。
It has been found that addition of Cr, Hf, etc. is also effective for increasing the thermal stability of the multilayer magnetic film according to the present invention. In Table 2, the multilayer magnetic film (Fe-3at%C
-1at%Ta/TiN) appears to have deteriorated rapidly after heat treatment at 700°C, but this is due to the use of photoceram, a crystallized glass whose surface properties are poorer than that of glass, as the substrate. seems to be doing so. By the way, the soft magnetic properties of the film formed on the ceramic substrate are worse than those of the glass substrate.

本発明による多層磁性膜で熱安定性が向上した原因を調
べるために600°Cで熱処理した膜についてAESと
SIMSにより膜深さ方向の組成分析を行った。その結
果、本発明による多層磁性膜では、Fe系合金薄膜と窒
化物系非磁性薄膜間で相互拡散が起こってはいるが、高
温で熱処理しても多層膜構造が保たれていることが確認
された。
In order to investigate the cause of the improved thermal stability of the multilayer magnetic film according to the present invention, the composition of the film heat-treated at 600°C was analyzed in the film depth direction using AES and SIMS. As a result, it was confirmed that in the multilayer magnetic film according to the present invention, although mutual diffusion occurred between the Fe-based alloy thin film and the nitride-based nonmagnetic thin film, the multilayer film structure was maintained even after heat treatment at high temperatures. It was done.

また、わずかではあるが磁性膜中に窒素の濃度分布が確
認された。これに対し、Fe−3at%C/ N x 
F e多層磁性膜では相互拡散のためか膜中の濃度分布
が均一化され、多層膜構造がほとんど確認できない。熱
処理による多層膜構造のこのような変化は、結晶粒径に
も影響することが考えられるため、X線回折法と電子顕
微鏡による断面構造i察から膜の平均結晶粒径を求めた
。第2図は熱処理温度に対する結晶粒径の変化を調べた
結果である。本発明による多層磁性膜の結晶粒径は熱処
理温度が300℃で約120人で、熱処理温度が600
℃でも約170人、700°Cで約200人と結晶粒成
長が抑制されているようにも思われる。これに対し、F
e−3at%C/NiFe多層磁性膜では熱処理温度が
300℃で約150人の結晶粒径が、熱処理温度が60
0℃になると約400人と2〜3倍に結晶粒成長するこ
とが分かった。また、断面の観察結果から本発明による
多層磁性膜では多層膜構造が確認されたが、Fe−3a
t%C/NiFe多層磁性膜では多層膜構造がほとんど
確認できず、これは組成分析結果とも一致する。これら
の結果から、結晶粒成長および相互拡散が膜の軟磁気特
性の変化の原因と考えられる。本発明による多層磁性膜
において結晶粒成長が抑制される原因は、高温熱処理に
よって磁性膜中に窒化物の微結晶が析出し、これが結晶
粒成長を抑制するためと考えられる。そこで、高分解能
EPMAにより分析した結果、磁性膜を構成する結晶粒
の周辺にTaNが観察された。また、透過電子顕微鏡に
よる回折パターンからもTaNと思われる回折線が見ら
れることから、このような窒化物の微結晶の析出が股の
熱安定性と関係しているものと考えられる。
Furthermore, a concentration distribution of nitrogen was confirmed in the magnetic film, although it was slight. On the other hand, Fe-3at%C/N x
In the Fe multilayer magnetic film, the concentration distribution in the film is made uniform, probably due to mutual diffusion, and the multilayer film structure is hardly visible. Since such a change in the multilayer film structure due to heat treatment is thought to affect the crystal grain size, the average crystal grain size of the film was determined from observation of the cross-sectional structure using an X-ray diffraction method and an electron microscope. FIG. 2 shows the results of examining changes in crystal grain size with respect to heat treatment temperature. The crystal grain size of the multilayer magnetic film according to the present invention is approximately 120 at a heat treatment temperature of 300°C;
It also appears that grain growth is suppressed by about 170 people at 700°C and about 200 people at 700°C. On the other hand, F
In the e-3at%C/NiFe multilayer magnetic film, the crystal grain size is about 150 when the heat treatment temperature is 300℃, and the crystal grain size is about 60℃ when the heat treatment temperature is 300℃.
It was found that when the temperature reached 0°C, the crystal grains grew 2 to 3 times as much as about 400 people. In addition, from the cross-sectional observation results, a multilayer structure was confirmed in the multilayer magnetic film according to the present invention, but Fe-3a
In the t%C/NiFe multilayer magnetic film, almost no multilayer structure can be observed, which also agrees with the compositional analysis results. These results suggest that grain growth and interdiffusion are responsible for changes in the soft magnetic properties of the film. The reason why crystal grain growth is suppressed in the multilayer magnetic film according to the present invention is considered to be that nitride microcrystals are precipitated in the magnetic film by high-temperature heat treatment, and this suppresses crystal grain growth. As a result of analysis using high-resolution EPMA, TaN was observed around the crystal grains constituting the magnetic film. In addition, since diffraction lines that appear to be TaN can be seen in the diffraction pattern obtained using a transmission electron microscope, it is thought that the precipitation of such nitride microcrystals is related to the thermal stability of the crotch.

[実施例3] 第1図に示すような多層磁性膜を用いてVTR用磁気ヘ
ットを作製した。本実施例では磁性膜11として膜厚9
50人のFe−3at%C−1at%Ta合金、窒化物
系非磁性薄膜12として膜厚50人のTiNを用いた。
[Example 3] A magnetic head for a VTR was manufactured using a multilayer magnetic film as shown in FIG. In this embodiment, the magnetic film 11 has a film thickness of 9
A 50% Fe-3at%C-1at%Ta alloy and a 50% TiN film were used as the nitride-based nonmagnetic thin film 12.

磁性膜は200周期積層し、膜厚は約20μmとした。The magnetic film was laminated 200 times, and the film thickness was about 20 μm.

第3図に示すVTR用磁気ヘッド90の作製工程を以下
に述べる。
The manufacturing process of the VTR magnetic head 90 shown in FIG. 3 will be described below.

第3図(a)に示す溝81を有するM n −Z nフ
ェライトからなる基板82を用意し、第3図(b)に示
す如く基板82の表面に膜厚約20μmの上記多層構造
を有する多層磁性膜83をイオンビームスパッタリング
法により作製した。次に第3図(C)に示すとと<pb
系ガラス84を用いて溝81を充填し、さらに第3図(
d)に示すごと<pb系ガラス84の表面を研摩してギ
ャップ構成面85を形成し、ヘッドコア半休ブロック8
6を作製した。さらに、ギャップ構成面85にギャップ
材となる5iOz膜をスパッタリング法により形成し、
第3図(e)に示すごとく巻線窓87を有するヘッドコ
ア半休ブロック88と上記へラドコア半休ブロック86
とをギャップ材を介して重ねあわせて500℃の温度で
30分間加熱してpb系ガラス84を再度溶融、固化し
て接合ブロック89を作製した。さらに第3図(e)に
示す2点鎖線部を切断して第3図(f)に示すVTR用
磁気ヘッド90を得た。
A substrate 82 made of Mn-Zn ferrite having grooves 81 as shown in FIG. 3(a) is prepared, and as shown in FIG. 3(b), the surface of the substrate 82 has the above multilayer structure with a thickness of about 20 μm. Multilayer magnetic film 83 was fabricated by ion beam sputtering. Next, as shown in Fig. 3(C), <pb
The groove 81 is filled with glass 84, and further as shown in FIG.
As shown in d), the surface of the PB glass 84 is polished to form a gap forming surface 85, and the head core semi-dead block 8 is polished.
6 was produced. Furthermore, a 5iOz film serving as a gap material is formed on the gap forming surface 85 by sputtering,
As shown in FIG. 3(e), a head core half-closed block 88 having a winding window 87 and the above-mentioned rad core half-closed block 86
were stacked together with a gap material in between and heated at a temperature of 500° C. for 30 minutes to melt and solidify the PB glass 84 again to produce a bonded block 89. Further, the VTR magnetic head 90 shown in FIG. 3(f) was obtained by cutting along the two-dot chain line shown in FIG. 3(e).

上記の工程によって作製した本発明の磁気ヘッドの記録
再生特性を保磁力14000eのメタルテープを用いて
測定した。この結果を第3表に示す。また、参考のため
にFe−3at%C/NiFe多層磁性膜を用いた磁気
ヘッドについての結果も示す。
The recording and reproducing characteristics of the magnetic head of the present invention manufactured through the above steps were measured using a metal tape with a coercive force of 14,000e. The results are shown in Table 3. For reference, results for a magnetic head using a Fe-3at%C/NiFe multilayer magnetic film are also shown.

第  3  表 第3表に示すように、本発明による多層磁性膜を用いた
磁気ヘッドの再生出力は従来例の多層磁性膜を用いた磁
気ヘッドに比べて再生出力が高いことが分かった。これ
は従来例による多層磁性膜ではPb系ガラスを用いたガ
ラスボンディングの工程で、第1表に示したように多層
磁性膜の軟磁気特性が劣化することが考えられるのに対
し、本発明による多層磁性膜では股の劣化はなく、むし
ろ軟磁気特性は向上するため、再生出力に差が見られた
ものと思われる。
Table 3 As shown in Table 3, it was found that the reproduction output of the magnetic head using the multilayer magnetic film according to the present invention was higher than that of the magnetic head using the conventional multilayer magnetic film. This is because in the conventional multilayer magnetic film, the soft magnetic properties of the multilayer magnetic film may deteriorate during the glass bonding process using Pb-based glass, as shown in Table 1. With the multilayer magnetic film, there is no deterioration of the crotch, but rather the soft magnetic properties are improved, which is probably why the difference in reproduction output was observed.

〔発明の効果〕〔Effect of the invention〕

以上説明したごとく、Fe系合金薄膜と窒化物系非磁性
薄膜とを組み合わせた多層磁性膜は高飽和磁束密度で、
しかも優れた軟磁気特性と高い熱安定性を示す。また、
本発明の多層磁性膜を磁気ヘッドの磁気回路の少なくと
も一部に用いることにより、優れた記録再生特性を有す
る磁気ヘッドを得ることができる。
As explained above, a multilayer magnetic film that combines a Fe-based alloy thin film and a nitride-based nonmagnetic thin film has a high saturation magnetic flux density.
Furthermore, it exhibits excellent soft magnetic properties and high thermal stability. Also,
By using the multilayer magnetic film of the present invention in at least a portion of the magnetic circuit of a magnetic head, a magnetic head having excellent recording and reproducing characteristics can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の多層磁性膜の断面図、第2図は熱処理
温度と結晶粒径の関係、第3図は本発明の多層磁性膜を
用いたVTR用磁気ヘッドの作製工程を示す斜視図であ
る。 11・・磁性膜、12・・・窒化物系非磁性薄膜、13
・・・基板、81・・溝、82・・基板、83・・・多
層磁性膜、84・・・pb系ガラス、85・・・ヘッド
ギャップ構成面、86・・ヘッドコア半休ブロック、8
7・・・巻線窓、88・・巻線窓を有するヘッドコア半
休ブロック、89・・・接合ブロック、90・・・VT
R用磁気ヘッド。 第 図 第 図 仏辷りf1及(°C) 手 〕 図
Fig. 1 is a cross-sectional view of the multilayer magnetic film of the present invention, Fig. 2 is a relationship between heat treatment temperature and crystal grain size, and Fig. 3 is a perspective view showing the manufacturing process of a magnetic head for a VTR using the multilayer magnetic film of the present invention. It is a diagram. 11...Magnetic film, 12...Nitride-based nonmagnetic thin film, 13
. . . Substrate, 81 . . Groove, 82 .
7... Winding window, 88... Head core semi-dead block with winding window, 89... Joining block, 90... VT
Magnetic head for R. fig. fig. fig.

Claims (3)

【特許請求の範囲】[Claims] 1.添加元素として、C,B,Ta,Ti,V,Zr,
Nb,W,Mo,Cr,Hfより選ばれる少なくとも1
種以上の元素を含むFeを主成分とする合金薄膜とVN
,TaN,TiN,ZrN,NbN,AlN,HfN,
Cr_2N,Mo_2Nより選ばれる少なくとも1種以
上の窒化物を含む窒化物系非磁性薄膜とを積層したこと
を特徴とする多層磁性膜。
1. Additional elements include C, B, Ta, Ti, V, Zr,
At least one selected from Nb, W, Mo, Cr, Hf
Fe-based alloy thin film containing more than one element and VN
, TaN, TiN, ZrN, NbN, AlN, HfN,
A multilayer magnetic film characterized by laminating a nitride-based nonmagnetic thin film containing at least one kind of nitride selected from Cr_2N and Mo_2N.
2.前記合金薄膜の平均結晶粒径が200Å以下である
請求項1記載の多層磁性膜。
2. The multilayer magnetic film according to claim 1, wherein the average grain size of the alloy thin film is 200 Å or less.
3.特許請求の範囲第1項又は2項記載の多層磁性膜を
磁気回路の少なくとも一部に用いたことを特徴とする磁
気ヘツド。
3. A magnetic head characterized in that the multilayer magnetic film according to claim 1 or 2 is used in at least a part of a magnetic circuit.
JP26892389A 1989-10-18 1989-10-18 Multilayer magnetic film and magnetic head using this film Pending JPH03132006A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26892389A JPH03132006A (en) 1989-10-18 1989-10-18 Multilayer magnetic film and magnetic head using this film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26892389A JPH03132006A (en) 1989-10-18 1989-10-18 Multilayer magnetic film and magnetic head using this film

Publications (1)

Publication Number Publication Date
JPH03132006A true JPH03132006A (en) 1991-06-05

Family

ID=17465155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26892389A Pending JPH03132006A (en) 1989-10-18 1989-10-18 Multilayer magnetic film and magnetic head using this film

Country Status (1)

Country Link
JP (1) JPH03132006A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115223783A (en) * 2021-04-21 2022-10-21 通用电气公司 Method of making a component with both magnetic and non-magnetic phases

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115223783A (en) * 2021-04-21 2022-10-21 通用电气公司 Method of making a component with both magnetic and non-magnetic phases
CN115223783B (en) * 2021-04-21 2026-02-10 通用电气公司 Method for manufacturing components with both magnetic and non-magnetic phases

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