JPS6364052B2 - - Google Patents
Info
- Publication number
- JPS6364052B2 JPS6364052B2 JP57048541A JP4854182A JPS6364052B2 JP S6364052 B2 JPS6364052 B2 JP S6364052B2 JP 57048541 A JP57048541 A JP 57048541A JP 4854182 A JP4854182 A JP 4854182A JP S6364052 B2 JPS6364052 B2 JP S6364052B2
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- lead
- semiconductor element
- bonding wire
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/411—Chip-supporting parts, e.g. die pads
- H10W70/417—Bonding materials between chips and die pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/015—Manufacture or treatment of bond wires
- H10W72/01515—Forming coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/015—Manufacture or treatment of bond wires
- H10W72/01551—Changing the shapes of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/321—Structures or relative sizes of die-attach connectors
- H10W72/325—Die-attach connectors having a filler embedded in a matrix
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/581—Auxiliary members, e.g. flow barriers
- H10W72/583—Reinforcing structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/59—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Wire Bonding (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は半導体装置に係り、特にその半導体
素子の電極とリードとを接続するボンデイングワ
イヤと、当該リードとの接続部の改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor device, and more particularly to improvements in a bonding wire that connects an electrode of a semiconductor element and a lead, and a connection portion between the lead and the bonding wire.
半導体装置の組立てには、半導体素子（ペレツ
ト）の電極と外部リードとをボンデイングワイヤ
で接続するボンデイング工程がある。第１図はそ
の工程を示すものである。すなわち、半導体素子
１を銀（Ag）ペースト等のマウント剤によりリ
ードフレーム２のベツド２ａに固着した後、この
半導体素子１の電極とボンデイングワイヤ３の一
端とをボンデイング接続し、しかる後このボンデ
イングワイヤ３の他端とリードフレーム２のイン
ナーリード部とをボンデイング接続する。ここ
に、半導体素子１の電極部は一般にアルミニウム
（Al）、リードフレーム２は鉄（Fe）系又は銅
（Cu）系の材料で構成されリードフレーム２のボ
ンデイング部には通常金めつきが施されている。
また、ボンデイングワイヤ３としては＝30μｍ
程度の金又はアルミニウムの細線が用いられてい
る。なお、ボンデイング方法としては熱圧着法又
は超音波法が一般に用いられる。
Assembling a semiconductor device involves a bonding process in which electrodes of a semiconductor element (pellet) and external leads are connected using bonding wires. FIG. 1 shows the process. That is, after the semiconductor element 1 is fixed to the bed 2a of the lead frame 2 with a mounting agent such as silver (Ag) paste, the electrode of the semiconductor element 1 and one end of the bonding wire 3 are connected by bonding. 3 and the inner lead portion of the lead frame 2 are connected by bonding. Here, the electrode portion of the semiconductor element 1 is generally made of aluminum (Al), the lead frame 2 is made of iron (Fe) or copper (Cu) material, and the bonding portion of the lead frame 2 is usually gold plated. has been done.
Also, as bonding wire 3 = 30μm
A thin gold or aluminum wire of about 100% is used. Note that a thermocompression bonding method or an ultrasonic method is generally used as a bonding method.
このように半導体素子１がボンデイング接続さ
れたリードフレーム２はその後モールド金型に入
れられ、第２図に示すように例えばエポキシ樹脂
４でトランスフアーモールドされた後、個別に切
断分離されるようになつている。 The lead frame 2 to which the semiconductor element 1 is bonded in this manner is then placed in a mold, and as shown in FIG. 2, is transfer-molded with, for example, epoxy resin 4, and then cut and separated into individual parts. It's summery.
ところで、上記ボンデイング後のボンデイング
ワイヤ３の接合強度には引張り強度等に基準値が
定められている。これは、後工程において、例え
ばリードフレーム２を移動させる際に衝撃、振動
が生じることにより、あるいはモールド工程の熱
処理時にエポキシ樹脂４とリードフレーム２との
間の熱膨張係数が異なるために、ボンデイングワ
イヤ３が剥離されることがあるため、これを防止
するものである。ボンデイングワイヤ３の接合部
のうち、第１ボンデイング側すなわち半導体素子
１との接続部は所望の引張り強度（15〜20ｇ）が
得られるため問題はない。
Incidentally, a reference value is determined for the bonding strength of the bonding wire 3 after bonding, such as tensile strength. This is caused by shocks and vibrations occurring during the subsequent process, for example, when moving the lead frame 2, or due to differences in the coefficient of thermal expansion between the epoxy resin 4 and the lead frame 2 during heat treatment in the molding process. This is to prevent the wire 3 from peeling off. Of the bonding parts of the bonding wire 3, the first bonding side, that is, the connection part with the semiconductor element 1 has no problem because the desired tensile strength (15 to 20 g) can be obtained.
しかしながら、第２ボンデイング側すなわちボ
ンデイングワイヤ３とリードフレーム２との接続
部においては、リードフレーム２の材質、表面の
酸化状態によつて接合条件が悪くなり、引張強度
が低下する（４〜５ｇ）。このように引張強度が
低下すると、後工程において設備や部品の管理が
複雑になる。 However, on the second bonding side, that is, at the connection between the bonding wire 3 and the lead frame 2, the bonding conditions deteriorate depending on the material of the lead frame 2 and the oxidation state of the surface, and the tensile strength decreases (4 to 5 g). . When the tensile strength decreases in this way, the management of equipment and parts becomes complicated in subsequent processes.
この発明は上記実情に鑑みてなされたもので、
その目的は、導電性ワイヤとリードとの接合部に
おける強度が向上した半導体装置を提供すること
にある。
This invention was made in view of the above circumstances.
The purpose is to provide a semiconductor device with improved strength at the joint between the conductive wire and the lead.
この発明は、ボンデイングワイヤとリードとの
接合部を銀ペーストで被覆し固着させるものであ
る。
In this invention, the joint portion between the bonding wire and the lead is coated with silver paste and fixed.
以下、図面を参照してこの発明の一実施例を説
明する。第３図はボンデイング工程の終了した状
態を示すもので、リードフレームのベツド１１上
には銀ペースト１２により半導体素子１３がマウ
ント固着されている。銀ペースト１２としては、
例えばEPO−TEK社製の商品名Ｈ−31、Ｈ−
31D、Ｈ−21、Ｈ−21Dなどが用いられる。そし
て、半導体素子１３の電極には例えば金でなるボ
ンデイングワイヤ１４の一端が接着され、このボ
ンデイングワイヤ１４の他端はリード１５の表面
に接着されている。しかして、このボンデイング
ワイヤ１４とリード１５との接続部は、上記半導
体素子１３のマウントに用いられた銀ペースト１
２と同じ材料の銀ペースト１６により被覆されて
おり、これにより強固に固着されている。
Hereinafter, one embodiment of the present invention will be described with reference to the drawings. FIG. 3 shows a state in which the bonding process has been completed, and a semiconductor element 13 is mounted and fixed on the bed 11 of the lead frame with silver paste 12. As silver paste 12,
For example, EPO-TEK product name H-31, H-
31D, H-21, H-21D, etc. are used. One end of a bonding wire 14 made of, for example, gold is bonded to the electrode of the semiconductor element 13, and the other end of this bonding wire 14 is bonded to the surface of the lead 15. Therefore, the connection portion between the bonding wire 14 and the lead 15 is connected to the silver paste 1 used for mounting the semiconductor element 13.
It is covered with silver paste 16 made of the same material as 2, and is firmly fixed by this.
上記銀ペースト１６は150℃の温度で30分〜３
時間の熱処理を施すことにより硬化されるもので
ある。 The above silver paste 16 is heated at a temperature of 150℃ for 30 minutes ~ 3
It is hardened by heat treatment for a period of time.
このような構造にあつては、ボンデイングワイ
ヤ１４とリード１５との接続部はボンデイング後
さらに銀ペースト１６により固着されているの
で、引張り強度は半導体素子１３の電極側と同等
（15〜20ｇ）にまで向上する。従つて、その後の
工程において、振動、衝撃が生じてもボンデイン
グワイヤ１４が剥れる心配はなく、設備や部品の
管理が簡単になる。また、リード１５の材質や表
面状態にかかわらず所望の強度が得られるもので
ある。さらに、上記実施例のように半導体素子１
３のマウント樹脂として銀ペースト１２を使用す
ると、同じ材料でボンデイングワイヤ１４の接合
強度を向上させることができる。 In such a structure, since the connection between the bonding wire 14 and the lead 15 is further fixed with silver paste 16 after bonding, the tensile strength is equivalent to that of the electrode side of the semiconductor element 13 (15 to 20 g). Improve to. Therefore, there is no fear that the bonding wire 14 will peel off even if vibrations or shocks occur in subsequent steps, making it easier to manage equipment and parts. Further, the desired strength can be obtained regardless of the material and surface condition of the lead 15. Furthermore, as in the above embodiment, the semiconductor element 1
If the silver paste 12 is used as the mounting resin in step 3, the bonding strength of the bonding wire 14 can be improved using the same material.
以上のようにこの発明によれば、導電性ワイヤ
とリードとの接合強度が向上した半導体装置を提
供できる。
As described above, according to the present invention, it is possible to provide a semiconductor device in which the bonding strength between the conductive wire and the lead is improved.
第１図は従来のボンデイング工程を示す平面
図、第２図は同じくモールド工程を示す平面図第
３図はこの発明の一実施例に係るボンデイング工
程を示す断面図である。
１１……ベツド、１３……半導体素子、１４…
…ボンデイングワイヤ、１５……リード、１６…
…銀ペースト。
FIG. 1 is a plan view showing a conventional bonding process, FIG. 2 is a plan view showing a molding process, and FIG. 3 is a cross-sectional view showing a bonding process according to an embodiment of the present invention. 11...Bed, 13...Semiconductor element, 14...
...Bonding wire, 15...Lead, 16...
...silver paste.
Claims (1)
で接続された半導体装置において、前記リードと
前記導電性ワイヤとの接合部を銀ペーストで被覆
し固着したことを特徴とする半導体装置。1. A semiconductor device in which an electrode of a semiconductor element and a lead are connected by a conductive wire, characterized in that a joint portion between the lead and the conductive wire is coated and fixed with a silver paste.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57048541A JPS58165359A (en) | 1982-03-26 | 1982-03-26 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57048541A JPS58165359A (en) | 1982-03-26 | 1982-03-26 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58165359A JPS58165359A (en) | 1983-09-30 |
| JPS6364052B2 true JPS6364052B2 (en) | 1988-12-09 |
Family
ID=12806223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57048541A Granted JPS58165359A (en) | 1982-03-26 | 1982-03-26 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58165359A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7278948B2 (en) | 2005-04-25 | 2007-10-09 | American Axle & Manufacturing, Inc. | “Zero” lash spherical differential assembly using spring washers |
| JP5299575B1 (en) * | 2011-11-04 | 2013-09-25 | トヨタ自動車株式会社 | Vehicle differential device |
-
1982
- 1982-03-26 JP JP57048541A patent/JPS58165359A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58165359A (en) | 1983-09-30 |
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