JPS6367554B2 - - Google Patents

Info

Publication number
JPS6367554B2
JPS6367554B2 JP14935082A JP14935082A JPS6367554B2 JP S6367554 B2 JPS6367554 B2 JP S6367554B2 JP 14935082 A JP14935082 A JP 14935082A JP 14935082 A JP14935082 A JP 14935082A JP S6367554 B2 JPS6367554 B2 JP S6367554B2
Authority
JP
Japan
Prior art keywords
thin film
silicon thin
substrate
grid
mesh
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP14935082A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5939712A (ja
Inventor
Kazunobu Tanaka
Akihisa Matsuda
Keiji Kumagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tonen General Sekiyu KK
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Toa Nenryo Kogyyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Toa Nenryo Kogyyo KK filed Critical Agency of Industrial Science and Technology
Priority to JP14935082A priority Critical patent/JPS5939712A/ja
Publication of JPS5939712A publication Critical patent/JPS5939712A/ja
Publication of JPS6367554B2 publication Critical patent/JPS6367554B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
JP14935082A 1982-08-30 1982-08-30 パタ−ニングされたシリコン薄膜の製造方法 Granted JPS5939712A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14935082A JPS5939712A (ja) 1982-08-30 1982-08-30 パタ−ニングされたシリコン薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14935082A JPS5939712A (ja) 1982-08-30 1982-08-30 パタ−ニングされたシリコン薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS5939712A JPS5939712A (ja) 1984-03-05
JPS6367554B2 true JPS6367554B2 (2) 1988-12-26

Family

ID=15473197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14935082A Granted JPS5939712A (ja) 1982-08-30 1982-08-30 パタ−ニングされたシリコン薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPS5939712A (2)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61278133A (ja) * 1985-06-03 1986-12-09 Toyobo Co Ltd アモルフアスシリコン膜

Also Published As

Publication number Publication date
JPS5939712A (ja) 1984-03-05

Similar Documents

Publication Publication Date Title
US4918028A (en) Process for photo-assisted epitaxial growth using remote plasma with in-situ etching
US4942058A (en) Process for forming deposited film
JPH0650730B2 (ja) 半導体薄膜の製造方法
US3291657A (en) Epitaxial method of producing semiconductor members using a support having varyingly doped surface areas
US5135607A (en) Process for forming deposited film
JPS6367554B2 (2)
JPS6367553B2 (2)
US5439844A (en) Process for forming deposited film
JPS6367555B2 (2)
EP0241311B1 (en) Process for forming deposited film
EP0243074B1 (en) Process for forming deposited film
JPH0421638B2 (2)
JPH0219618B2 (2)
JPH02262324A (ja) Ｘ線透過膜およびその製造方法
DE2458680B2 (de) Verfahren zur Herstellung von dielektrisch isolierten Substraten geringer Durchbiegung für monolithisch integrierte Halbleiterschaltungen
JP2023501297A (ja) 結晶化に耐性のあるアモルファスシリコンベースのフィルム
JPH07315826A (ja) 多結晶シリコン薄膜及びその製造方法
JPS59207828A (ja) シリコン薄膜の形成方法
JPS6191010A (ja) 堆積膜形成法
JPH0456304B2 (2)
JPS639014B2 (2)
JPS58158642A (ja) 光導電部材
JPH0639700B2 (ja) 堆積膜形成法
JPS59229565A (ja) 電子写真用感光体
CN116959956A (zh) 使用纳米颗粒形成超晶格结构的方法