JPS6369791A - 二重るつぼ - Google Patents

二重るつぼ

Info

Publication number
JPS6369791A
JPS6369791A JP21346886A JP21346886A JPS6369791A JP S6369791 A JPS6369791 A JP S6369791A JP 21346886 A JP21346886 A JP 21346886A JP 21346886 A JP21346886 A JP 21346886A JP S6369791 A JPS6369791 A JP S6369791A
Authority
JP
Japan
Prior art keywords
crucible
double
melt
crystal
duplex
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21346886A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0475880B2 (2
Inventor
Hideo Makino
秀男 牧野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KYUSHU DENSHI KINZOKU KK
Osaka Titanium Co Ltd
Original Assignee
KYUSHU DENSHI KINZOKU KK
Osaka Titanium Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KYUSHU DENSHI KINZOKU KK, Osaka Titanium Co Ltd filed Critical KYUSHU DENSHI KINZOKU KK
Priority to JP21346886A priority Critical patent/JPS6369791A/ja
Publication of JPS6369791A publication Critical patent/JPS6369791A/ja
Publication of JPH0475880B2 publication Critical patent/JPH0475880B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP21346886A 1986-09-09 1986-09-09 二重るつぼ Granted JPS6369791A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21346886A JPS6369791A (ja) 1986-09-09 1986-09-09 二重るつぼ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21346886A JPS6369791A (ja) 1986-09-09 1986-09-09 二重るつぼ

Publications (2)

Publication Number Publication Date
JPS6369791A true JPS6369791A (ja) 1988-03-29
JPH0475880B2 JPH0475880B2 (2) 1992-12-02

Family

ID=16639703

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21346886A Granted JPS6369791A (ja) 1986-09-09 1986-09-09 二重るつぼ

Country Status (1)

Country Link
JP (1) JPS6369791A (2)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0383886A (ja) * 1989-08-29 1991-04-09 Mitsubishi Materials Corp 単結晶引き上げ用サセプタ
US5669761A (en) * 1994-11-15 1997-09-23 Fuji Jukogyo Kabushiki Kaisha Discharge control apparatus of hydraulic pump for automatic transmission
US5908367A (en) * 1996-06-13 1999-06-01 Nissan Motor Co., Ltd. Flow rate control valve and continuously variable automatic transmission provided with same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4840666U (2) * 1971-09-16 1973-05-23
JPS5443045U (2) * 1977-08-29 1979-03-23

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4840666U (2) * 1971-09-16 1973-05-23
JPS5443045U (2) * 1977-08-29 1979-03-23

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0383886A (ja) * 1989-08-29 1991-04-09 Mitsubishi Materials Corp 単結晶引き上げ用サセプタ
US5669761A (en) * 1994-11-15 1997-09-23 Fuji Jukogyo Kabushiki Kaisha Discharge control apparatus of hydraulic pump for automatic transmission
US5908367A (en) * 1996-06-13 1999-06-01 Nissan Motor Co., Ltd. Flow rate control valve and continuously variable automatic transmission provided with same

Also Published As

Publication number Publication date
JPH0475880B2 (2) 1992-12-02

Similar Documents

Publication Publication Date Title
JPH07106960B2 (ja) 単結晶の製造方法
CN102220628A (zh) 生长半导体晶体的装置
JPH02133389A (ja) シリコン単結晶の製造装置
US11326272B2 (en) Mono-crystalline silicon growth apparatus
JP4555677B2 (ja) 連続的な結晶化により、所定の横断面及び柱状の多結晶構造を有する結晶ロッドを製造するための装置
JP2019043788A (ja) 単結晶育成方法及び単結晶育成装置
CN115852483B (zh) 一种制备圆饼状氟化镁晶体镀膜材料的装置和方法
JP2021080141A (ja) 酸化ガリウム単結晶の製造方法及び製造装置
JPH0475880B2 (2)
JPH0315550Y2 (2)
JP2733898B2 (ja) 化合物半導体単結晶の製造方法
JP3812573B2 (ja) 半導体結晶の成長方法
CN105887187B (zh) 一种硅单晶生长掺杂剂浓度稳定控制方法
JPH02172885A (ja) シリコン単結晶の製造方法
JPH04305091A (ja) 単結晶引上方法及びその装置
JP2531875B2 (ja) 化合物半導体単結晶の製造方法
JPH1129398A (ja) 化合物半導体単結晶の製造装置
JP2017193469A (ja) アフターヒータ及びサファイア単結晶製造装置
JPH0310593B2 (2)
JP2014156373A (ja) サファイア単結晶の製造装置
TWI513865B (zh) 微坑密度（ｍｐｄ）低之鍺鑄錠／晶圓及用於其製造之系統和方法
JPS63285183A (ja) 化合物半導体単結晶の製造方法
JPH0559873B2 (2)
JPH0840798A (ja) 単結晶の製造方法
JPS62148391A (ja) 高融点物質結晶の製造方法および前記方法で使用する材料の容器