JPS6372007A - Etching of transparent conducting film - Google Patents
Etching of transparent conducting filmInfo
- Publication number
- JPS6372007A JPS6372007A JP21541786A JP21541786A JPS6372007A JP S6372007 A JPS6372007 A JP S6372007A JP 21541786 A JP21541786 A JP 21541786A JP 21541786 A JP21541786 A JP 21541786A JP S6372007 A JPS6372007 A JP S6372007A
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- conductive film
- etching
- transparent
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims description 19
- 238000000034 method Methods 0.000 claims description 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 2
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims 2
- 229910000457 iridium oxide Inorganic materials 0.000 claims 2
- 239000010408 film Substances 0.000 description 32
- 239000007789 gas Substances 0.000 description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 244000061354 Manilkara achras Species 0.000 description 1
- VYRNMWDESIRGOS-UHFFFAOYSA-N [Mo].[Au] Chemical compound [Mo].[Au] VYRNMWDESIRGOS-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- UJXZVRRCKFUQKG-UHFFFAOYSA-K indium(3+);phosphate Chemical compound [In+3].[O-]P([O-])([O-])=O UJXZVRRCKFUQKG-UHFFFAOYSA-K 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本究明は、表示素子や撮像素子に用いられろ透明感１！
噂のエツチング方法に関する。[Detailed Description of the Invention] [Industrial Field of Application] The present research can be used in display devices and image pickup devices to improve transparency 1!
Regarding the rumored etching method.
液晶表示素子や撮像素子て用いられる透明４電ＷｔＡは
、酸化インジウムや酸化スズを少量添加し几酸化インジ
ウムである場合が多い。この種の導電膜のエツチング方
法としては、ガスプラズマによるドライエツチングも試
入られているが、塩酸や硝酸添加した塩酸によるウェッ
トエツチングが主流である。Transparent 4-electrode WtA used in liquid crystal display elements and image pickup elements is often made of indium phosphate with a small amount of indium oxide or tin oxide added. Although dry etching using gas plasma has been tried as a method for etching this type of conductive film, wet etching using hydrochloric acid or hydrochloric acid added with nitric acid is the mainstream.
しかし、この種のウェットエツチングされた透明導電膜
の端面ば、傾斜が急である。そのため、第２図に示すよ
うに基板１上でパターニングされた透明導電膜２上に、
層間絶縁膜６を彩暖し、さらに金属薄膜７を配線すると
１段差部での層間絶縁膜の被覆性が悪いため透明導電膜
２と金属薄膜７との短絡や、金属薄膜７のｈ線が発生す
ることがある。これらの問題の発生け、透明導電膜２の
端面の傾斜ｈ”＝急であることに起因している。そのた
め透明導電膜の端面になだらかな傾斜をも之せる方法と
して、特開昭６１−４２３５ の様な方法が考案され
友。However, the end face of this type of wet-etched transparent conductive film has a steep slope. Therefore, as shown in FIG. 2, on the transparent conductive film 2 patterned on the substrate 1,
When the interlayer insulating film 6 is heated and the metal thin film 7 is further wired, the coverage of the interlayer insulating film is poor at one level difference, resulting in a short circuit between the transparent conductive film 2 and the metal thin film 7, and the H line of the metal thin film 7. This may occur. The occurrence of these problems is due to the steep inclination h'' of the end surface of the transparent conductive film 2. Therefore, as a method for creating a gentle slope on the end surface of the transparent conductive film, Japanese Patent Application Laid-Open No. 61-119 A method like 4235 has been devised.
この方法は、第５図に示すように、透明導電膜のエツチ
ング成分である硝酸に対し等方性エッチヤントであるモ
リブデンを主成分とする金属薄寒８、透明４［１’４２
上に積層して、少量の硝酸を含む塩酸によって２層同時
にエツチングするものでモリブデン金Ｍ＊喚８が透明感
ＴＩＬ膜２よりもエツチング連関が速Ａｆｃめに、透明
導電ＶＸ２の川面になだちかな傾斜がつけることが可能
である。As shown in Fig. 5, this method uses metal thin film 8, transparent 4 [1'42
The two layers are laminated on top and simultaneously etched using hydrochloric acid containing a small amount of nitric acid, and the molybdenum gold M* layer 8 is deposited on the surface of the transparent conductive VX2, with a faster etching relationship than the transparent TIL film 2. It is possible to add a slight slope.
しかし前述の従来技術では一透明導電膜のエツチング液
ｒ対して、透明導電膜よりエツチング速度の速り＠属薄
膜を形成しなければならず、工程ｈ；複雑になるという
問題点を有する。そこで本発明け、このような問題点を
解決するもので、その目的とする所は、単純な工程を追
加するだけで、透明導１！膜の端面になだらかな傾斜を
つける方法を提供するところＫある。However, the above-mentioned prior art has the problem that a thin film having a faster etching rate than the transparent conductive film must be formed with respect to the etching solution r for the transparent conductive film, making the process complicated. Therefore, the present invention is intended to solve these problems, and its purpose is to create a transparent conductor by simply adding a simple process! There are several companies that provide a method for creating a gentle slope on the end face of a membrane.
本発明の透明導電ｈλのエツチング方法は、透明導電膜
の表面を少なくともフッ素源ガスを用いたガスプラズマ
処理する工程と、前記透明導電膜上に所定のレジストパ
ターンを形成する工程と、塩酸を主成分とする液で前記
透明導電膜をエツチングする工程からなることを特徴と
する。The method of etching a transparent conductive hλ of the present invention includes a step of treating the surface of a transparent conductive film with gas plasma using at least a fluorine source gas, a step of forming a predetermined resist pattern on the transparent conductive film, and a step of treating the surface of a transparent conductive film with a gas plasma using at least a fluorine source gas. The method is characterized by comprising a step of etching the transparent conductive film with a liquid as a component.
本発明の上記の構成てよれば、透明導電膜の？Ｊ而をガ
スプラズマ処理−することによって透明導電膜の界面（
数十λ）に透明導電膜のエツチング液ニ対して、透明導
電膜のエツチング速変上り速い層を形喫することｂ”−
できろ。し友がって、特定時間にエツチングされる量は
、水平方向ｈ′−垂直方向（エツチング方向）Ｋ比べて
大きいため、双方のエツチング連関の差で、透明導電膜
の端面に適切な傾斜をつけろことができる。According to the above configuration of the present invention, the transparent conductive film can be The interface of the transparent conductive film (
To form a layer where the etching speed of the transparent conductive film changes quickly compared to the etching solution of the transparent conductive film in several tens of λ).
You can do it. Therefore, since the amount etched in a specific time is larger than the horizontal direction h' - vertical direction (etching direction) K, the difference in the etching relationship between the two makes it possible to create an appropriate slope on the end surface of the transparent conductive film. You can turn it on.
以下本発明の詳細を図面を参照して説明する。 The details of the present invention will be explained below with reference to the drawings.
第１図は１本発明の一実施例であり、工程（α）〜ωに
そったｌ！ｆｉ面図である。基板１に、インジウム酸化
物を主成分とする透明導電膜２をスノシックリングによ
り２０００大堆積する。次に、四弗化炭素と酸素の比が
５対１の混合ガス約０．３ ｔｏｒｒを尋人した高周波
プラズマ装置によりプラズマ処理をすると、透明導電膜
２の表面に、数十λの透明導電膜のフッ素化された層３
が形成される。次に、ポジ形フォトレジスト４を塗布し
て、フォトリソグラフィにより所定のレジストパターン
を形成する。FIG. 1 shows an embodiment of the present invention, in which steps (α) to ω are followed. FIG. A transparent conductive film 2 containing indium oxide as a main component is deposited in a thickness of 2000 on a substrate 1 by Snosic ring. Next, when plasma treatment is performed using a high-frequency plasma device using a mixed gas of approximately 0.3 torr with a ratio of carbon tetrafluoride and oxygen of 5:1, a transparent conductive conductor of several tens of λ is formed on the surface of the transparent conductive film 2. Fluorinated layer 3 of the membrane
is formed. Next, a positive photoresist 4 is applied and a predetermined resist pattern is formed by photolithography.
そして、ポストベーク後、塩醒、硝酸、紳水を１０対１
対１０の割合で混合し之エツチング液にてエツチングす
ると、透明導電膜のフッ素化された層３のエツチング速
度け、透明導？！！膜２より数倍ｔなど速いため、透明
導電膜２００ＯＡをエツチングする時間に７−）素化さ
れたｆｆｉが水平方向１ｃｊμｍはどエツチングされて
、透明導１！＠２の端面になだらかな傾斜ｈ；つぐ。最
後に、残ったレジストを剥離する。パターニングされた
透明導電膜の六曜の傾斜角５（基板の法線知対する端面
の角度）ｌ−ｔ、約８０変であった。表面に形成されて
いる。透明２ｓ１！膜のフッ素化されたＲｒｒｉ、数十
Ａと薄い定め２４？！！性透明度において全く問題ない
が、十分希釈し、た塩酸で軽くエツチングすることで除
去で剖る。After post-baking, add salt, nitric acid, and water at a ratio of 10:1.
When etching is performed using an etching solution mixed at a ratio of 10:1 to 10:1, the etching rate of the fluorinated layer 3 of the transparent conductive film increases. ! ! Because it is several times faster than film 2 (t), in the time it takes to etch the transparent conductive film 200OA, the 7-) elementalized ffi is etched by 1 cj μm in the horizontal direction, and the transparent conductive film 1! The end face of @2 has a gentle slope h; Tsugu. Finally, remove the remaining resist. The hexagonal inclination angle 5 (the angle of the end surface relative to the normal to the substrate) lt of the patterned transparent conductive film was about 80 degrees. formed on the surface. Transparent 2s1! The membrane's fluorinated Rrri is thin at a few tens of amperes and is 24? ! ! There is no problem in terms of transparency, but it can be removed by diluting it sufficiently and lightly etching it with hydrochloric acid.
また、傾斜角を変えるには、四弗化炭素と酸素の混合比
を変えろことで簡単に達成できろ。この場合、四弗化炭
素の分圧北本を高めれば高めろほど傾斜角が犬六〈なろ
類句にある。Also, changing the tilt angle can be easily achieved by changing the mixing ratio of carbon tetrafluoride and oxygen. In this case, the higher the partial pressure Kitamoto of carbon tetrafluoride, the higher the inclination angle.
フッ素夛を用い之プラズマガス改分としては、木実施例
では、四弗化炭素を４１１にあげて説明している＾；、
フッ素、フッ化水素、ｃ２ｃ４Ｆ、、Ｃ韮、Ｃ王シ、。Regarding plasma gas modification using fluorine, carbon tetrafluoride is listed as 411 in the wood example.
Fluorine, hydrogen fluoride, c2c4F, C ni, C Wangshi.
ＳＦ、 、 Ｘｅ Ｆ２．０２Ｆ６．０３Ｆ、、 Ｃ
ＨＦ３． ＣＣ１Ｆ、、三フッ化窒素、四フッ化ケイ素
＋ Ｃ３ｒＦｓ、ＣＣ４’２． ＣｔｃｔＦ５゜ＣＨ
αＦ２ 筑でもよい。SF, , Xe F2.02F6.03F,, C
HF3. CC1F, , nitrogen trifluoride, silicon tetrafluoride + C3rFs, CC4'2. CtctF5゜CH
αF2 Chiku may also be used.
また、上記ガスと混合するガスは、酸素以外に９素等の
不活性ガスを用いることもできる。Further, as the gas to be mixed with the above gas, in addition to oxygen, an inert gas such as 9 elements can also be used.
なお、透明導［膿け、酸化インジウムを酸化スズの比率
は、酸化インジウムが主体であればよく酸化インジウム
のみでもよい。ま之しンストとしては、有機フォトレジ
ストのほか、耐酸性のある金属薄ｌ！ワ、ＣＶＤ５ｉ０
２等の絶縁膜でもより０またパターニングはフォトレジ
ストを用いたリングラフィに限らず、印刷によるパター
ニング或は、クロムやＳＺ○２の被着でもよい。Note that the ratio of indium oxide to tin oxide in the transparent conductor may be only indium oxide as long as indium oxide is the main component. In addition to organic photoresists, acid-resistant metal thin l! Wow, CVD5i0
In addition, the patterning is not limited to phosphorography using photoresist, but may also be patterning by printing or deposition of chromium or SZ○2.
以上説明しえように本発明の透明、Ｓ電ｑ２のエツチン
グ方法は、単純を工程の追加のみで、透明碍電膜の端面
の傾斜ｂ；ゆるやかになり、上層配線のステヴプカバレ
ジをよくすることが可能であり、傾斜自邸をプラズマガ
スの故分比で９単にかえることｈ；できるという長所を
もつ。As can be explained above, the method of etching the transparent S-electrode q2 of the present invention can make the slope of the end face of the transparent insulating film gentler by adding a simple step, thereby improving the step coverage of the upper layer wiring. It is possible, and has the advantage that the slope of the house can be simply changed by changing the ratio of the plasma gas.
第１図翰〜（ト）は１本発明の一実施例を示す工程にそ
一＋７’ｃｌＦ＋面図である。
第２図は、従来の透明基Ｔｌ膜の端面に傾斜がない場合
の断面図であり、第３図は従来の透明導電膜の端面に傾
斜を有した場合の凸面図である。
１・・・・・・基板
２・・・・・・透明４電嘆
３・・・・・・透明導電膜のフッ素化された層４・・曲
フオトレンスト
５・・・・・・端面の傾斜角
６・・・・・・層間絶縁膜
７・・・・・・金属薄膜FIGS. 1A to 1C are 7'clF+ side views showing steps of an embodiment of the present invention. FIG. 2 is a sectional view of a conventional transparent base Tl film in which the end surface has no slope, and FIG. 3 is a convex view of a conventional transparent conductive film in which the end surface has a slope. 1... Substrate 2... Transparent 4 Electron 3... Fluorinated layer of transparent conductive film 4... Curved photoresist 5... Edge surface Inclination angle 6...Interlayer insulating film 7...Metal thin film
Claims (1)
なくともフッ素源ガスを用いたガスプラズマ処理する工
程と、前記透明導電膜上に所定のレジストパターンを形
成する工程と、塩酸を主成分とする液で前記透明導電膜
をエッチングする工程からなることを特徴とする透明導
電膜のエッチング方法。A step of treating the surface of the transparent conductive film mainly composed of iridium oxide with gas plasma using at least a fluorine source gas, a step of forming a predetermined resist pattern on the transparent conductive film, and a step of treating the surface of the transparent conductive film mainly composed of iridium oxide, and forming a predetermined resist pattern on the transparent conductive film. A method for etching a transparent conductive film, comprising the step of etching the transparent conductive film with a liquid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21541786A JPS6372007A (en) | 1986-09-12 | 1986-09-12 | Etching of transparent conducting film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21541786A JPS6372007A (en) | 1986-09-12 | 1986-09-12 | Etching of transparent conducting film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6372007A true JPS6372007A (en) | 1988-04-01 |
Family
ID=16671989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21541786A Pending JPS6372007A (en) | 1986-09-12 | 1986-09-12 | Etching of transparent conducting film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6372007A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004191958A (en) * | 2002-11-27 | 2004-07-08 | Sharp Corp | Method for forming conductive element and method for forming reflective electrode portion of liquid crystal display device |
-
1986
- 1986-09-12 JP JP21541786A patent/JPS6372007A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004191958A (en) * | 2002-11-27 | 2004-07-08 | Sharp Corp | Method for forming conductive element and method for forming reflective electrode portion of liquid crystal display device |
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