JPS637376A - Ecr-cvd device - Google Patents

Abstract

PURPOSE:To increase the speed of forming a film onto a substrate by branching the microwaves to be introduced from a generating source, generating necessary plasma in ECR by the one thereof and exciting a reactive gas directly by the other. CONSTITUTION:The microwaves generated by a magnetron 12 are branched at a tee branch 18 on the down stream of a power monitor 14. One thereof is introduced through a microwave transport route 13 into a plasma chamber 6 of a plasma generator 4 as with the conventional device. The charged electrons converted to plasma therein is drawn out of a drawing out window 10 as plasma current into a sample chamber 1 by the effect of the divergent magnetic field of a coil 11. Another microwave branched by the branch 18 is introduced through a microwave transport route 19 into a cavity 20 interposed in a reactive gas introducing route 5 for the sample chamber 1. The microwave is projected to the reactive gas therein to excite the gas by allowing the gas to absorb the energy. Such gas is introduced in the direction crossing the plasma flow on the substrate 2 of the sample chamber 1. The film forming speed is thereby additionally increased simply by adding the branching route for the microwaves.

Description

Detailed Description of the Invention [Industrial Application Field] The present invention relates to an ECR-C film forming apparatus, which is one of the film forming apparatuses for forming thin films used in the fields of optics, electronic equipment, equipment, etc.
This relates to VD devices.

[Prior Art] In recent years, ECR-CVD (Electron Cyclotron Resonance- Chemical vapor deposition: E-1ectr
on Cyclotron Re5onance-C
chemical VaperDeposition)
technology is coming into use.

Regarding the specific technical contents of ECR and ECR-CVD, please refer to Japanese Patent Application Laid-open No. 55-141729 and Japanese Patent Application Laid-open No. 55-141729.
This is disclosed in '7-133636 and the like. The existing ECR-CVDKi generally has a configuration as shown in FIG. That is, in the plasma chamber 6 of the plasma generator 4 attached to the sample chamber 1, the magnetron (microwave generation source) 12
Microwaves sent from the isolator 15, directional coupler 16, 17 screen and waveguide 7 are passed through the quartz window 8 into the plasma chamber 6.
At the same time, ions are drawn into the sample chamber 1 by the action of a divergent magnetic field from a coil 11 disposed around the plasma chamber 6, and from this plasma flow and the attached reaction gas passage 5. The reactant gas introduced into the sample chamber 1 is caused to react with the reaction gas, so that a thin film of the reaction product is produced on the substrate 2'' within the sample chamber 1.

[Problems to be Solved by the Invention] According to the above ECR-CVD apparatus, the plasma chamber 6
A large amount of reaction gas can be introduced as a plasma raw material from the raw material gas introduction path 9, and it can be turned into plasma with high activation efficiency, from which the plasma flow (ion beam) is directly applied to the substrate 2 in the sample chamber 1. Since the reaction product with the reaction gas is formed on the substrate surface, it has the advantage of being able to efficiently form a highly pure compound thin film while keeping the substrate 2 at a low temperature. It will be done.

The present invention was made for the purpose of realizing an ECR-CVD apparatus that can further increase the film formation rate on the substrate in the sample chamber while maintaining the advantages and advantages of the scale film formation neck. be.

[Means for Solving the Problems 1] The present invention, as a means for realizing such an intended purpose, uses plasma generated by microwave tll electrons due to electron cyclotron resonance in a sample chamber in which the substrate is made of Mn. In an ECR-CVD apparatus comprising a plasma generator which draws out the plasma to the sample y1 yen by the action of a divergent magnetic field, and a reactant gas introduction path for guiding the reactant gas, the plasma is introduced from the microwave generation source into the plasma generator. A cavity is interposed in the reaction gas passage, and the reaction gas introduced into the sample chamber is irradiated with the demultiplexed microwaves through this cavity. It is said that

[Function] With the ECR-CVD apparatus configured as described above, the reaction gas introduced into the sample chamber 1 also receives microwave irradiation in the cavity provided in the introduction path and absorbs energy. Since it is in an excited state, the reaction between the two is further promoted compared to the conventional condition where the reactant gas is brought into direct contact with the plasma flow, thereby further improving the film formation rate. can do. In the case of this device, the microwaves obtained from one microwave generation source are separated, one side generates the necessary plasma by ECR, and the other side directly excites the reaction gas delivered to the sample chamber. Since this is done, it is only necessary to add a demultiplexing path to the existing equipment, and high-speed synthesis using microwaves can be realized in-house and rationally.

[Example 1 Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

FIG. 1 illustrates an EVR-CVD apparatus according to the present invention, whose basic configuration is the same as that of the conventional example shown in FIG. That is, as a film-forming charge, a plasma generator 4 that generates plasma that is extracted as a plasma flow (ion jaw) into the sample chamber 1, and a reaction gas introduction device that introduces a desired reaction gas into the sample chamber 1. Route 5 is added.

The sample chamber 1 is equipped with an evacuation means (not shown), and has a substrate 2 disposed therein through a freely openable shutter 3 at a position facing a plasma extraction window 10 of a plasma chamber 6, which will be described later.

The plasma generator 4 connected above the sample chamber 1
A waveguide 7 that introduces microwaves through a quartz window 8 and a source gas introduction path 9 that introduces plasma source gas are shown above.
A plasma chamber 6 is connected to the plasma chamber 6, which has a plasma draw-out window 10 to the sample chamber 1 below, and a plasma chamber 6 in which plasma is generated by microwaves 11i due to electron cyclotron resonance. A coil 11 which causes the electron cyclotron resonance, forms a diverging magnetic field on the side of the plasma extraction window 10, and draws out the plasma generated in the plasma chamber 6 into the sample chamber 1 by the action of the divergent magnetic field, and other appropriate devices. Additional elements (not shown) are included.

In the plasma chamber 6 of this plasma generator 4,
Microwaves are introduced from a magnetron 12 serving as a plasma generation source via a microwave transport path 13, that is, a power monitor 14, an isolator 15, an E, -H tuner 17, and the waveguide 7.

However, in an ECR-CVD apparatus with such a configuration,
Power monitor 14 in the microwave transport path 13
A T-branch 18 is provided on the downstream side so that a part of the microwave sent from the magnetron 12 can be split. - On the other hand, a cavity 20 is provided near the sample chamber 1 in the reaction gas introduction path 5 that leads the reaction gas to the sample chamber 1, and the reaction gas that has passed through the cavity 20 immediately enters the sample chamber 1 on the substrate 2. The plasma is introduced from a direction perpendicular to the plasma flow. And this reaction gas introduction route 5
The waveguide 21 of the demultiplexed microwave transport path 19 is passed through the quartz window 22 into the cavity 20 provided in the
Partially waved microwaves are introduced into the sample chamber 1, and the reaction gas introduced into the sample chamber 1 is irradiated with the microwaves. Although the middle tube is only shown briefly in ■, this branching microphone is connected to the I-wave transport rod 19, and the h of the plasma chamber 6 is
The isolator 15, [-H'
7'knees 17 pain! Consists of 8 consecutive pieces.

Next, the operation of this ECR-CVD apparatus will be explained.

The microwaves generated by the magnetron 12 are split at a T-branch 18 after the power monitor 14, and the other half is introduced into the plasma chamber 6 of the plasma generator 4 through the microwave transport path 13 as before. The microwave introduced into this plasma chamber 6 is, for example, 2.45 G11z, 8
75 ECR when Gauss (using air core coil)
When the conditions are met, one energy of the electric field is efficiently absorbed by the charged particles. The charged particles (source gas) turned into plasma in the plasma chamber 6 are drawn out into the sample chamber 1 as a plasma stream through the lower draw-out window 10 by the action of the divergent magnetic field of the surrounding coil 11. The other microwave branched at the T-branch 18 passes through the microwave transport path 19' to the reaction gas introduction rod 5 for the reaction gas into the sample chamber 1.
The cavity 201. : 6, and the reaction gas is irradiated here. Then, the reaction gas absorbs energy by microwave irradiation and is excited, and immediately after this excitation, it is introduced into the sample chamber 1 from a direction crossing the plasma flow above the substrate 2.

Now, as an example, we will explain the case where a thin film of SI 3 Na is deposited on the substrate 2 using N2 as the plasma raw material gas and SiH4 as the reaction gas in the plasma chamber 6. The reaction is as follows.

N2+ SiH4★ → 513N4 (1)N;+s
r+4 → S! 31'Ja (2) In other words, for film formation in sample chamber 1, in addition to the conventional reaction (2),
Activated 5iF-+4★ directly binds to N; (1
) reaction will be obtained. Therefore, the target compound S
The generation of i3N4 is performed more efficiently, and the rate of film formation on the substrate surface is effectively increased.

Note that the light energy incident on the sample chamber 1 from the plasma chamber 6 also contributes to this film-forming reaction.

In the above explanation, the case of forming a film of 813N4 was exemplified; however, it is of course not limited to this, and by selecting the plasma raw material gas and the reaction gas, it is possible to form a film of a large number of other desired compounds. In either case, the effect of increasing the film formation rate on the substrate is obtained due to the contribution of activation of the reaction gas by microwave excitation.

[Effect of light] As explained above, the present invention demultiplexes the microwaves sent from the source in the ECR-CVD apparatus, and irradiates the reaction gas into the sample chamber to excite and introduce the microwaves. Therefore, the film formation rate on the substrate in the sample chamber can be further increased simply by adding a split microwave transport path or the like.

[Brief explanation of the drawing]

FIG. 1 is a schematic front view of an ECR□CVD neck mount showing one embodiment of the present invention, and FIG. 2 is a front view of the same showing a conventional example thereof. 1...-Sample chamber 2... Grass roots 3... Shutter 4... Plasma generator 5... Reactant gas introduction path 6... Plasma chamber 7... Waveguide
8...Quartz window 9...-Source gas introduction route 1
0...Plasma drawer window 11...Coil
12... Magnetron 13... Microwave transport path 14... Power monitor 15... Isolator
17...E-T tuner 18...T branch 1
9...Microwave transport path 20...Cavity
21... Waveguide 22... Quartz window

Claims (1)

[Claims] The sample chamber in which the substrate is placed is equipped with a plasma generator that draws plasma generated by microwave discharge caused by electron cyclotron resonance into the sample chamber by the action of a divergent magnetic field, and a reactive gas introduction path that guides the reactive gas. In this film forming apparatus, microwaves introduced from a microwave generation source to the plasma generation apparatus are split, and a cavity is interposed in the reaction gas introduction path, and the reaction gas introduced into the sample chamber by this cavity is separated. An EC characterized in that a gas is irradiated with the demultiplexed microwaves.
R-CVD equipment.