JPS637656B2 - - Google Patents

Info

Publication number
JPS637656B2
JPS637656B2 JP56175178A JP17517881A JPS637656B2 JP S637656 B2 JPS637656 B2 JP S637656B2 JP 56175178 A JP56175178 A JP 56175178A JP 17517881 A JP17517881 A JP 17517881A JP S637656 B2 JPS637656 B2 JP S637656B2
Authority
JP
Japan
Prior art keywords
grid
energy
reflective surface
particles
pass filter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56175178A
Other languages
Japanese (ja)
Other versions
JPS5878360A (en
Inventor
Hiroshi Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP56175178A priority Critical patent/JPS5878360A/en
Publication of JPS5878360A publication Critical patent/JPS5878360A/en
Publication of JPS637656B2 publication Critical patent/JPS637656B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00Particle spectrometers or separator tubes
    • H01J49/44Energy spectrometers, e.g. alpha-, beta-spectrometers
    • H01J49/46Static spectrometers
    • H01J49/48Static spectrometers using electrostatic analysers, e.g. cylindrical sector, Wien filter
    • H01J49/488Static spectrometers using electrostatic analysers, e.g. cylindrical sector, Wien filter with retarding grids

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Tubes For Measurement (AREA)

Description

【発明の詳細な説明】 本発明はローパスフイルタ及びハイパスフイル
タを組合せた荷電粒子エネルギー分析装置に関す
る。こゝでローパスフイルタと云うのは或るエネ
ルギー値よりも低いエネルギーの荷電粒子だけを
選択的に反射する装置であり、ハイパスフイルタ
は或るエネルギー値よりも高いエネルギーを持つ
た荷電粒子だけを透過させる装置である。ローパ
スフイルタは反射面とその前面に反射面と平行し
て張設されたグリツドよりなつており、グリツド
を基準にして反射面を分析対象の荷電粒子と同極
性に荷電してある。グリツドと反射面間の電位差
をVとすると荷電粒子中、(V)eV(V電子ボル
ト)以上のエネルギーを有するものは反射面に入
射して吸収され(V)eV以下のエネルギーを有
する荷電粒子が取出される。ハイパスフイルタは
平行に張設された2重グリツドで、荷電粒子の入
射側のグリツドを基準にしてその後のグリツドを
荷電粒子と同極性に荷電し、両者間の電位差をV
とすると、(V)eV以上の荷電粒子は両グリツド
を透過し、(V)eVより低いエネルギーの粒子は
入射側へ反射される。そこでハイパスフイルタと
ローパスフイルタを組合せて任意に設定したせま
いエネルギー幅内に含まれるエネルギーを持つた
粒子が選別して取出される。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a charged particle energy analyzer that combines a low-pass filter and a high-pass filter. Here, a low-pass filter is a device that selectively reflects only charged particles with energy lower than a certain energy value, and a high-pass filter transmits only charged particles with energy higher than a certain energy value. This is a device that allows you to A low-pass filter consists of a reflective surface and a grid extending parallel to the reflective surface in front of the reflective surface, and the reflective surface is charged with the same polarity as the charged particles to be analyzed with respect to the grid. If the potential difference between the grid and the reflective surface is V, among the charged particles, those with energy greater than (V) eV (V electron volts) are incident on the reflective surface and absorbed, and charged particles with energy less than (V) eV is taken out. A high-pass filter is a double grid stretched in parallel.The grid on the incident side of the charged particle is used as a reference, and the subsequent grid is charged to the same polarity as the charged particle, and the potential difference between the two is reduced to V.
Then, charged particles of (V)eV or more will be transmitted through both grids, and particles with energy lower than (V)eV will be reflected to the incident side. Therefore, by combining a high-pass filter and a low-pass filter, particles having energy within an arbitrarily set narrow energy range are selected and extracted.

上述したローパスフイルタ及びハイパスフイル
タを用いて構成された荷電粒子エネルギー分析装
置で従来提案されているものは第1図に示すよう
な構造になつている。MはO点を曲率中心とする
球面反射面でその前側に同心的にグリツドG1が
配置され、両者でローパスフイルタを構成してい
る。MからみてO点の反対側にO点を曲率中心と
する2重球面グリツドG2,G3があつて、G
2,G3によりハイパスフイルタを構成してい
る。グリツドG1,G2は同電位に保たれ、G
1,M間及びG2,G3間に夫々適当な電圧が印
加されている。O点の傍のS点に荷電粒子の放射
点を置くと、或るエネルギーV1以下の荷電粒子
はMで反射されてO点の傍に一旦集束した後発散
してハイパスフイルタであるグリツドG2,G3
に入射し、或るエネルギーV2以下の粒子が反射
され、エネルギーがV1とV2との間にある粒子
だけがグリツドG3を通過するから、これを検出
する。この構成によるときは、取出されたエネル
ギーV1とV2との間の荷電粒子は発散してい
て、荷電粒子放射源の像を形成していないから、
或る特定のエネルギーを持つた放射電子による試
料の像を観測すると云うようなことができない。
また実際問題としてS点はローパスフイルタとハ
イパスフイルタで囲まれた中にあり、こゝに試料
をセツトすることはできなくて、具体的には側方
に試料励起部があり、試料から放射された荷電粒
子を電子光学系でS点に導き、S点からMに向け
て放射している(特公昭51―2396号)ので、装置
構成として複雑であり、更に曲率中心O点をはさ
んで両側にローパスフイルタとハイパスフイルタ
が配置されているので装置が大型となる。
A conventionally proposed charged particle energy analyzer constructed using the above-mentioned low-pass filter and high-pass filter has a structure as shown in FIG. M is a spherical reflective surface having a center of curvature at point O, and a grid G1 is arranged concentrically in front of M, and both constitute a low-pass filter. There are double spherical grids G2 and G3 with the center of curvature at the O point on the opposite side of the O point when viewed from M, and the G
2 and G3 constitute a high pass filter. Grids G1 and G2 are kept at the same potential, and G
Appropriate voltages are applied between 1 and M and between G2 and G3, respectively. If the emission point of charged particles is placed at point S near point O, charged particles with energy below a certain level V1 will be reflected by M and once focused near point O, then diverge and go to grid G2, which is a high-pass filter. G3
This is detected because particles incident on the grid G3 with an energy below a certain energy V2 are reflected, and only particles with an energy between V1 and V2 pass through the grid G3. With this configuration, the charged particles between the extracted energies V1 and V2 are divergent and do not form an image of the charged particle radiation source.
It is not possible to observe an image of a sample using emitted electrons with a certain energy.
In addition, as a practical matter, the S point is surrounded by a low-pass filter and a high-pass filter, and it is not possible to set the sample there.Specifically, there is a sample excitation part on the side, and the sample is emitted from the sample. The charged particles are guided to point S by an electron optical system and emitted from point S toward M (Special Publication No. 51-2396), so the device configuration is complicated, and the center of curvature point O is in between. Since a low-pass filter and a high-pass filter are arranged on both sides, the device becomes large.

本発明は上述した既提案の装置の欠点を解消
し、単純化された小型な構成で試料の像観察が可
能であり性能的にも優れた荷電粒子エネルギー分
析装置を提供しようとするものである。以下実施
例によつて本発明を説明する。
The present invention aims to eliminate the drawbacks of the previously proposed devices described above, and to provide a charged particle energy analyzer that is capable of observing images of a sample with a simple and compact configuration and has excellent performance. . The present invention will be explained below with reference to Examples.

第2図は本発明の一実施例を示す。A1,A2
は荷電粒子の入射口及び出射口でこの装置は左右
対称な構造なのでどちらを入射口としてもよい。
Mは反射面でA1及びA2の中心を焦点とする回
転楕円面である。装置全体は双頭の円錐形のよう
な形の外壁Wで囲まれている。反射面Mの前面に
は反射面と平行にグリツドG1が設けられてい
る。この反射面MとグリツドG1とでローパスフ
イルタが構成されている。外壁の双頭部には夫々
グリツドG2,G3及びG4,G5が設けられて
いる。グリツドG2,G3は開口A1の中心を曲
率中心とする同心球面になつている。同様にして
グリツドG4,G5も開口A2の中心を曲率中心
とする同心球面になつている。GRは反射面Mと
グリツドG1間及びグリツドG2,G3間及びグ
リツドG4,G5間夫々の端縁部の電界の乱れを
防ぐためのガードリングである。
FIG. 2 shows an embodiment of the invention. A1, A2
are an entrance port and an exit port for charged particles, and since this device has a symmetrical structure, either one may be used as the entrance port.
M is a reflective surface, which is an ellipsoid of revolution with focal points at the centers of A1 and A2. The entire device is surrounded by an outer wall W shaped like a double-headed cone. A grid G1 is provided in front of the reflective surface M in parallel with the reflective surface. This reflective surface M and grid G1 constitute a low-pass filter. The double heads of the outer wall are provided with grids G2, G3 and G4, G5, respectively. The grids G2 and G3 are concentric spherical surfaces whose center of curvature is the center of the aperture A1. Similarly, the grids G4 and G5 are concentric spherical surfaces with the center of curvature at the center of the aperture A2. GR is a guard ring for preventing disturbance of the electric field at the edges between the reflective surface M and the grid G1, between the grids G2 and G3, and between the grids G4 and G5.

開口A1を荷電粒子の入射開口、A2を出射開
口として各部に与えられる電位と作用について説
明する。グリツドG2及び開口A1からグリツド
G2に至る外壁の双頭部は同電位であり、荷電粒
子源と同電位で一般にアース電位とする。グリツ
ドG3は荷電粒子を反射する極性でその電位を
Vaとする。入射荷電粒子のエネルギーを電子ボ
ルトで表わしてVとするとVがVaより小さな粒
子はG3によつて反撥され、V>Vaなるエネル
ギーの荷電粒子だけがグリツドG3を通過する。
グリツドG1,G3,G4及びこれらのグリツド
の間の外壁Wは全部同電位にしてある。従つてこ
れらの各部で囲まれた空間内は全体が同電位であ
る。グリツドG3を通過した荷電粒子は上述した
空間を直進してグリツドG1の面に入射する。反
射面Mは荷電粒子を反撥する方向に電位が与えら
れ、その電位をV1とし、V1>Vaとする。そ
うするとグリツドG1と反射面Mとの間に進入し
た荷電粒子のうちV<V1のものだけが反射さ
れ、V>V1の粒子は反射面Mに衝突し電荷を失
う。Mで反射された荷電粒子は開口A2の中心に
向つて直進する。これは反射面MがA1,A2を
焦点とする楕円だからである。グリツドG5は荷
電粒子を反撥する方向で電位V2が与えてある。
従つてグリツドG4を通過した粒子でエネルギー
がV2より小さな粒子はグリツドG5で反射され
V2より大なる粒子がグリツドG5を通過して開
口A2の中央に集束する。そこでA2の所に検出
器を置いておくと、エネルギーがV2がV1との
間にある粒子だけが検出されることになる。第3
図は各グリツド及び反射面に与える電位の関係
と、グリツドG2,G3及びG4,G5及び反射
面MとグリツドG1で構成されるフイルターの性
能を示すグラフである。
The potentials and effects applied to each part will be described with the aperture A1 as the entrance aperture for charged particles and A2 as the exit aperture. The grid G2 and the double heads of the outer wall from opening A1 to grid G2 are at the same potential and are at the same potential as the charged particle source, generally at ground potential. Grid G3 has a polarity that reflects charged particles and changes its potential.
Let it be Va. When the energy of an incident charged particle is expressed in electron volts and is V, particles where V is smaller than Va are repelled by G3, and only charged particles with energy such that V>Va pass through grid G3.
The grids G1, G3, G4 and the outer wall W between these grids are all at the same potential. Therefore, the entire space surrounded by these parts has the same potential. The charged particles that have passed through the grid G3 travel straight through the above-mentioned space and are incident on the surface of the grid G1. A potential is applied to the reflective surface M in a direction that repels charged particles, and the potential is V1, and V1>Va. Then, among the charged particles that have entered between the grid G1 and the reflective surface M, only those with V<V1 are reflected, and the particles with V>V1 collide with the reflective surface M and lose their charge. The charged particles reflected by M travel straight toward the center of the aperture A2. This is because the reflective surface M is an ellipse with focal points at A1 and A2. A potential V2 is applied to the grid G5 in a direction to repel charged particles.
Therefore, particles that have passed through grid G4 and have energy smaller than V2 are reflected by grid G5, and particles that are larger than V2 pass through grid G5 and are focused at the center of aperture A2. Therefore, if a detector is placed at A2, only particles with energy between V2 and V1 will be detected. Third
The figure is a graph showing the relationship between the potentials applied to each grid and the reflective surface, and the performance of a filter composed of grids G2, G3, G4, G5, reflective surface M, and grid G1.

厳密に云うと各フイルターで反射される粒子の
限界エネルギーはフイルターに入射するときの入
射角θによつて変化する。第4図でP1,P2が
グリツド或は反射面であり、P1の電位をO,P
2の電位をV,入射する荷電粒子のエネルギーを
V′とし、入射角をθとする。粒子がP1,P2
間の電界の影響を受けるのはその運動速度の電界
方向の成分であるから、反射の条件はV
V′cosθである。θが小さいときはcosθ=1−θ2
2でθ2の項が無視でき反射条件はVV′である。
またθ2の項が無視できない場合でもθが一定であ
ればエネルギー選別の閾値に広りは生じない。
Strictly speaking, the critical energy of particles reflected by each filter changes depending on the incident angle θ when they enter the filter. In Figure 4, P1 and P2 are grids or reflective surfaces, and the potential of P1 is set to O, P
The potential of 2 is V, and the energy of the incident charged particle is
Let V′ be the angle of incidence and θ. Particles are P1 and P2
Since it is the component of the velocity of motion in the direction of the electric field that is affected by the electric field between V
V′cosθ. When θ is small, cosθ=1−θ 2 /
2, the term θ 2 can be ignored and the reflection condition is VV'.
Furthermore, even if the term θ 2 cannot be ignored, as long as θ is constant, the energy selection threshold will not vary.

第5図は第2図における開口A1付近の図の紙
面に垂直な面による断面を示す。Sは試料でXは
X線源である。試料SはX線により励起され、光
電子を放出する。この光電子が上述した作用によ
つてエネルギー分析される。エネルギー値の走査
はグリツドG1,G3,G4を同電位にし、反射
面M1及びグリツドG5のグリツドG1等との間
の電位差を一定に保つてG1等の電位を変化させ
ることによつて行われる。開口A2には試料Sか
ら放射された光電子のうち或るエネルギー幅内に
入るものだけが集束してそれらの光電子による試
料の像を作る。グリツドG1を透過した粒子はき
わめて低速になつているが、単にエネルギー選別
された粒子を検出して試料から放射される粒子の
エネルギースペクトルを測定するだけであればグ
リツドG5と開口A2との間に加速用グリツドを
設ける必要はない。この場合荷電粒子はA2の位
置に置かれた検出器の電位によつて吸引され加速
される。試料の特定エネルギー粒子による像を観
察する場合は、G5と開口A2との間にG5と同
心的に加速用グリツドを配置し、開口A2の面に
形成された粒子像を更に電子光学系で拡大して螢
光面、写真フイルム、撮像管等に投影する。なお
試料の励起方法は第4図に示す型に限らず任意で
あり、試料から放出された荷電粒子を電子光学系
を介して開口A1に入射させるようにすることも
妨げない。
FIG. 5 shows a cross section near the opening A1 in FIG. 2 along a plane perpendicular to the plane of the drawing. S is the sample and X is the X-ray source. The sample S is excited by the X-rays and emits photoelectrons. The energy of these photoelectrons is analyzed by the action described above. Scanning of the energy value is performed by setting the grids G1, G3, and G4 to the same potential, and changing the potential of the grid G1, etc. while keeping the potential difference between the reflecting surface M1 and the grid G1, etc. of the grid G5 constant. Of the photoelectrons emitted from the sample S, only those that fall within a certain energy range are focused on the aperture A2 to form an image of the sample using these photoelectrons. Particles that have passed through grid G1 have an extremely low velocity, but if you simply want to detect the energy-selected particles and measure the energy spectrum of the particles emitted from the sample, there is a gap between grid G5 and aperture A2. There is no need to provide an acceleration grid. In this case, the charged particles are attracted and accelerated by the potential of the detector placed at position A2. When observing an image of a sample with specific energy particles, an accelerating grid is placed between G5 and aperture A2 concentrically with G5, and the particle image formed on the surface of aperture A2 is further magnified using an electron optical system. The image is then projected onto a fluorescent surface, photographic film, image pickup tube, etc. Note that the method for exciting the sample is not limited to the type shown in FIG. 4, but may be arbitrary, and charged particles emitted from the sample may be made to enter the aperture A1 via the electron optical system.

A1,A2間の距離は試料励起系及び荷電粒子
検出系が納まる範囲でなるべく接近させるのが好
ましく、A1,A2間が近い程反射面の各点にお
ける前述θの差が小さくなる。また上述実施例で
は反射面Mは回転楕円面であるが、A1,A2間
距離がA1及びA2から反射面までの距離に比し
小さいときは反射面はA1,A2間の中点に曲率
中心を持つ球面でよい。
It is preferable to make the distance between A1 and A2 as close as possible within a range that accommodates the sample excitation system and the charged particle detection system, and the closer the distance between A1 and A2, the smaller the difference in the above-mentioned θ at each point on the reflecting surface. Further, in the above embodiment, the reflecting surface M is a spheroidal surface, but when the distance between A1 and A2 is smaller than the distance from A1 and A2 to the reflecting surface, the center of curvature of the reflecting surface is at the midpoint between A1 and A2. A spherical surface with .

エネルギーフイルタを用いた荷電粒子エネルギ
ー分析装置は静電半球型エネルギー分析装置に比
し広い立体角内に対射される荷電粒子を扱うこと
ができるから感度が高いと云う特徴が期待される
のであるが、前述したように既提案の装置はエネ
ルギー分析器内に分析しようとする荷電粒子を電
子光学系を用いて導入しているので、この電子光
学系によつて試料から放射される荷電粒子の導入
立体角が制限されたり、電子光学系が一般に粒子
のエネルギーの通過特性が異なるので、偏つたエ
ネルギーの粒子を通過させるという欠点をもつて
おり、本来の特徴を充分発揮し得ていない。
Charged particle energy analyzers using energy filters are expected to have higher sensitivity than electrostatic hemispherical energy analyzers because they can handle charged particles incident within a wider solid angle. However, as mentioned above, the previously proposed device introduces the charged particles to be analyzed into the energy analyzer using an electron optical system. Since the solid angle of introduction is limited and the electron optical system generally has different energy transmission characteristics for particles, it has the disadvantage of allowing particles with biased energy to pass through, and cannot fully demonstrate its original characteristics.

本発明は上述したような構成で凹面反射面の共
役な2点に荷電粒子の入射開口と出射開口を設け
たから、試料から放射される荷電粒子を直接エネ
ルギー分析系内に入射させることができ、かつ試
料及び試料励起系及び荷電粒子検出系がエネルギ
ー分析系の外に配置できるので、エネルギー分析
系内に荷電粒子線束を遮蔽する異物がなく、試料
から広い立体角内に放射される荷電粒子を損失な
く扱えるから、前述既提案の装置に比し高感度で
あり、装置の大きさとしては既定案装置の半分
(エネルギー分析系が反射面の曲率中心の一方側
だけであるから)ですみ、分析された荷電粒子は
集束しているので、単に荷電粒子を検出する場合
及び加速して再結像系に導き写像する場合の何れ
にも対応できる特長を有する。
Since the present invention has the above-described configuration and has an entrance aperture and an exit aperture for charged particles at two conjugate points on the concave reflective surface, the charged particles emitted from the sample can be made to directly enter the energy analysis system. In addition, since the sample, sample excitation system, and charged particle detection system can be placed outside the energy analysis system, there are no foreign substances in the energy analysis system that block the charged particle beam flux, and the charged particles emitted from the sample within a wide solid angle can be detected. Since it can be handled without loss, it has higher sensitivity than the previously proposed device, and the size of the device is half that of the existing device (because the energy analysis system is only on one side of the center of curvature of the reflecting surface). Since the analyzed charged particles are focused, the present invention has the advantage that it can be used both for simply detecting charged particles and for accelerating them and guiding them to a re-imaging system for mapping.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は既提案装置の側面略図、第2図は本発
明の一実施例装置の水平断面図、第3図は各グリ
ツド及び反射面に与える電位の関係とフイルター
特性を示すグラフ、第4図は粒子反射部の拡大
図、第5図は第2図における開口A1付近の垂直
断面図である。 M…反射面、G1〜G5…グリツド、A1,A
2…荷電粒子の入射或は出射開口。
Fig. 1 is a schematic side view of an already proposed device, Fig. 2 is a horizontal sectional view of an embodiment of the device of the present invention, Fig. 3 is a graph showing the relationship between potentials applied to each grid and reflective surface and filter characteristics, and Fig. 4 is a graph showing filter characteristics. The figure is an enlarged view of the particle reflection section, and FIG. 5 is a vertical sectional view of the vicinity of the opening A1 in FIG. 2. M... Reflective surface, G1-G5... Grid, A1, A
2...Charged particle entrance or exit aperture.

Claims (1)

【特許請求の範囲】[Claims] 1 凹面反射面の中心線に対し交又する方向に並
ぶ2つの共役点に荷電粒子の入射及び出射用の開
口を設け、上記反射面の前面に同面と平行してグ
リツドを張設して、同凹面反射面と共にローパス
フイルタを構成し、上記2つの開口の一方に対
し、その開口と上記反射面との間で同開口の中心
を曲率中心として同心球的に2つのグリツドを張
設してハイパスフイルターを構成したことを特徴
とする荷電粒子エネルギー分析装置。
1. Openings for the entrance and exit of charged particles are provided at two conjugate points arranged in a direction perpendicular to the center line of the concave reflective surface, and a grid is provided in front of the reflective surface in parallel with the same surface. , constitutes a low pass filter together with the concave reflective surface, and two grids are concentrically stretched between one of the two apertures and the reflective surface with the center of the aperture as the center of curvature. A charged particle energy analyzer characterized in that a high pass filter is configured.
JP56175178A 1981-10-31 1981-10-31 Charged particle energy analyzer Granted JPS5878360A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56175178A JPS5878360A (en) 1981-10-31 1981-10-31 Charged particle energy analyzer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56175178A JPS5878360A (en) 1981-10-31 1981-10-31 Charged particle energy analyzer

Publications (2)

Publication Number Publication Date
JPS5878360A JPS5878360A (en) 1983-05-11
JPS637656B2 true JPS637656B2 (en) 1988-02-17

Family

ID=15991627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56175178A Granted JPS5878360A (en) 1981-10-31 1981-10-31 Charged particle energy analyzer

Country Status (1)

Country Link
JP (1) JPS5878360A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5962850A (en) * 1998-03-04 1999-10-05 Southwest Research Institute Large aperture particle detector with integrated antenna

Also Published As

Publication number Publication date
JPS5878360A (en) 1983-05-11

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