JPS6376802A - Preparation of fine particle stuck with heterogeneous film on surface - Google Patents

Preparation of fine particle stuck with heterogeneous film on surface

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Publication number
JPS6376802A
JPS6376802A JP61221466A JP22146686A JPS6376802A JP S6376802 A JPS6376802 A JP S6376802A JP 61221466 A JP61221466 A JP 61221466A JP 22146686 A JP22146686 A JP 22146686A JP S6376802 A JPS6376802 A JP S6376802A
Authority
JP
Japan
Prior art keywords
particles
fine particles
fine
plasma
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61221466A
Other languages
Japanese (ja)
Inventor
Saburo Iwama
岩間 三郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daido Steel Co Ltd
Daido Gakuen School
Original Assignee
Daido Steel Co Ltd
Daido Gakuen School
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daido Steel Co Ltd, Daido Gakuen School filed Critical Daido Steel Co Ltd
Priority to JP61221466A priority Critical patent/JPS6376802A/en
Publication of JPS6376802A publication Critical patent/JPS6376802A/en
Pending legal-status Critical Current

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  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To stick uniform films to the entire area around respective fine particles by entraining the fine particles and the fine particles for a heterogeneous film having the m.p. lower than the m.p. of the fine particles in a carrier gas and passing the gas through a plasma forming region, thereby forming the heterogeneous film on the fine particles. CONSTITUTION:The inside of a flow pipe 16 is evacuated to a vacuum through a suction port 29 and the gaseous Ar for carrying is continuously supplied from a supplying means A thereto and is passed through the plasma forming region 31. On the other hand, microwaves are applied to the inside of a cavity resonator 18 by a microwave oscillator 21 to convert the gaseous Ar to plasma in the region 31. For example, fine Al2O3 particles and fine Al particles are respectively supplied from supplying means B, C to the pipe 16 in this state. When the respective particles arrive at the plasma region, the fine Al particles are heated to melt and evaporate by the plasma to the m.p. or above. Since the fine Al2O3 particles are controlled in the temp. so as to maintain the form of this time as it is, the A&l film is evenly stuck onto the fine Al2O3 particles. Then the fine Al2O3 particles sticking to the film arrive at a recovering device 26 and are captured by the filter 28 thereof.

Description

【発明の詳細な説明】 本願発明は次に述べる問題点の解決を目的とする。[Detailed description of the invention] The present invention aims to solve the following problems.

(産業上の利用分野) この発明は表面に異質の被膜を
付着させた微粒子の製法に関する。
(Industrial Application Field) The present invention relates to a method for producing fine particles having a foreign coating attached to their surfaces.

(従来の技術) 上記のような微粒子を製造する場合、
例えば加熱炉内に置いた容器内に多量の微粒子を入れる
と共に、上記炉内において被膜用の原料を加熱してその
蒸気を上記微粒子に接触させることによ、す、目的とす
る微粒子を得るようにする考えが案出されている。しか
しこのような手段によれば、上記容器内では微粒子同志
が接触している為、容器内において上記加熱を行う間に
微粒子相互のa集が生じて粒径が極めて増大してしまう
問題点があった。また、容器内の微粒子には被膜がむら
のある状態で付着してしまう問題点もあった。
(Prior art) When producing the above-mentioned fine particles,
For example, by placing a large amount of fine particles in a container placed in a heating furnace, and heating raw materials for coating in the furnace and bringing the vapor into contact with the fine particles, the desired fine particles can be obtained. An idea has been devised to do so. However, according to such means, since the fine particles are in contact with each other in the container, there is a problem that the fine particles agglomerate with each other during the heating in the container, and the particle size increases significantly. there were. There was also the problem that the coating adhered unevenly to the fine particles inside the container.

(発明が解決しようとする問題点) この発明は上記従
来の問題点を除き、粒径の大幅な増大なく被膜を有する
微粒子の製造を行なうことができ、その上各微粒子にあ
っては、各々の周囲全域に均等に被膜が付着した微粒子
にすることができるようにした表面に異質の被膜を付着
させた微粒子の製法を提供しようとするものである。
(Problems to be Solved by the Invention) This invention, except for the above-mentioned conventional problems, can produce fine particles having a coating without significantly increasing the particle size. It is an object of the present invention to provide a method for producing fine particles having a different kind of coating attached to the surface thereof, thereby making it possible to produce fine particles having a coating evenly attached to the entire circumference of the particle.

本願発明の構成は次の通りである。The configuration of the present invention is as follows.

(問題点を解決する為の手段) 本願発明は前記請求の
範囲記載の通りの手段を講じたものであってその作用は
次の通りである。
(Means for Solving the Problems) The present invention takes the measures as described in the claims above, and its effects are as follows.

(作用) プラズマ化領域を通る搬送ガスに乗せられた
微粒子は、プラズマ化領域を浮遊状態で通過する。また
上記プラズマ化領域を通る搬送ガスに乗せられた被膜用
微粒子又は被膜用成分を含んだガスは、プラズマ化領域
において蒸発又は分解される。そしてその被膜用微粒子
の蒸気又は上記ガスの被膜用成分は、上記浮遊状態の微
粒子の表面に被膜となって付着する。
(Function) The particles carried by the carrier gas passing through the plasma region pass through the plasma region in a suspended state. Further, the gas containing coating particles or coating components carried on the carrier gas passing through the plasma generation region is evaporated or decomposed in the plasma generation region. Then, the vapor of the coating particles or the coating component of the gas adheres to the surface of the floating particles as a coating.

(実施例) 以下本願の゛実施例を示す図面について説
明する。第1図に示される微粒子製造装置において、A
は搬送ガス供給手段、Bは微粒子供給手段、Cは被J1
9用微粒子供給手段を夫々示す、16は流通管で、一端
を上記各供給手段に共通に接続しである。この流通管1
6は管内のガスをプラズマ化する為のマイクロ波エネル
ギーを管外から管内へ通すことのできる材料例えばガラ
ス管、石英管等でもって形成される。31は流通管16
内において設定したプラズマ化領域で、31aはその入
口、31bは出口を夫々示す。
(Embodiments) The drawings showing the embodiments of the present application will be described below. In the fine particle manufacturing apparatus shown in FIG.
is a carrier gas supply means, B is a particulate supply means, and C is a target J1.
The particulate supply means for 9 are shown respectively, and 16 is a flow pipe, one end of which is commonly connected to each of the above-mentioned supply means. This flow pipe 1
Reference numeral 6 is made of a material such as a glass tube, a quartz tube, etc., which allows microwave energy to be passed from outside the tube into the tube to convert the gas inside the tube into plasma. 31 is the flow pipe 16
31a and 31b respectively indicate the inlet and outlet of the plasma generation region set within the plasma chamber.

次に17は、プラズマ化領域31に付設のプラズマ化手
段として例示するマイクロ波印加装置である。
Next, reference numeral 17 denotes a microwave application device exemplified as a plasma generation means attached to the plasma generation region 31.

これにおいて、18は空洞共振器で、その大きさは内部
においてマイクロ波の共振が生じそこに定在波が生ずる
ことのできる大きさ、例えばマイクロ波の波長と同程度
乃至は2倍程度の大きさに形成しである。 20はパワ
ーユニットで、マイクロ波発振器21やその発振器の出
力を調節する為の出力制御部22等が備わっている。上
記マイクロ波発振器としては一例としてマグネトロンが
用いである。
In this, 18 is a cavity resonator, and its size is such that microwave resonance occurs inside and a standing wave is generated therein, for example, the size is about the same as or twice the wavelength of the microwave. It's just formed. A power unit 20 includes a microwave oscillator 21 and an output control section 22 for adjusting the output of the oscillator. A magnetron is used as an example of the microwave oscillator.

23はアイソレータで、反射マイクロ波を吸収して発振
器21の破損を防止する為に設けられたものであり、水
を矢印で示す如く流通させ得るようになっている。24
は電力モニタで、発振器21から流通管16の側に向か
う入射波とその反対方向に向かう反射波の夫々の電力を
監視する為のものである。
An isolator 23 is provided to absorb reflected microwaves and prevent damage to the oscillator 21, and is designed to allow water to flow as shown by the arrow. 24
A power monitor is used to monitor the power of each of the incident wave heading from the oscillator 21 toward the flow pipe 16 and the reflected wave heading in the opposite direction.

25は整合器(スリースタブチューナと称される)で、
空洞共振器18における共振をとる為に設けられている
。尚マイクロ波発振器の発振周波数は例えば2.45 
GHzであり、又空洞共振器の共振モードは例えばHO
Iである。
25 is a matching box (referred to as a three-stub tuner);
It is provided to obtain resonance in the cavity resonator 18. The oscillation frequency of the microwave oscillator is, for example, 2.45.
GHz, and the resonance mode of the cavity resonator is, for example, HO
It is I.

次に26は回収装置で、流通管16の他端に連通させた
ケース27内にフィルタ28を備えさせて構成しである
。尚この回収装置26としては従来より周知の任意の構
成のものを用いることができる。29は吸引口で、真空
ポンプに接続される。30は弁を示す。
Next, reference numeral 26 denotes a recovery device, which is constructed by providing a filter 28 in a case 27 that communicates with the other end of the flow pipe 16. It should be noted that as this recovery device 26, one having any conventionally known configuration can be used. 29 is a suction port connected to a vacuum pump. 30 indicates a valve.

次に上記構成の装置による微粒子の製造の一例として、
酸化アルミニウムの微粒子の表面にアルミニウムの被膜
が付着した微粒子の製造手順について説明する。先ず吸
引口29を通して流通管16の内部を真空ポンプにより
真空排気し、所定の真空度になったならば搬送ガス供給
手段Aから搬送ガスとしてアルゴン又はヘリウム等の不
活性ガス若しくはそれらの混合ガスを流通管16に連続
的に供給する。するとその搬送ガスは、プラズマ化領域
31をその入口31aから出口31bへ向けて流通し、
回収装置26を通って吸引口29から真空ポンプへ引か
れる。向上記搬送ガスの供給量は、流通管16の内部で
の搬送ガスのガス圧が例えば1〜数10Torrとなり
、また流通管16の内部での搬送ガスの流速が3〜30
IIl/秒程度となるようにするのがよい。一方、マイ
クロ波発振器21を作動させてアンテナ21aから空洞
・共振器18の内部にマイクロ波を与え、そのマイクロ
波を流通管16の内部のプラズマ化領域31に及ぼす。
Next, as an example of manufacturing fine particles using the apparatus with the above configuration,
A procedure for producing fine particles of aluminum oxide with an aluminum film attached to the surface will be described. First, the inside of the flow pipe 16 is evacuated by a vacuum pump through the suction port 29, and when a predetermined degree of vacuum is reached, an inert gas such as argon or helium, or a mixture thereof is supplied as a carrier gas from the carrier gas supply means A. It is continuously supplied to the flow pipe 16. Then, the carrier gas flows through the plasma generation region 31 from its inlet 31a to its outlet 31b,
It passes through the recovery device 26 and is drawn through the suction port 29 to the vacuum pump. The supply amount of the carrier gas mentioned above is such that the gas pressure of the carrier gas inside the flow pipe 16 is, for example, 1 to several tens of Torr, and the flow rate of the carrier gas inside the flow pipe 16 is 3 to 30 Torr.
It is preferable to set the speed to about IIl/sec. On the other hand, the microwave oscillator 21 is operated to apply microwaves from the antenna 21a to the inside of the cavity/resonator 18, and the microwaves are applied to the plasma region 31 inside the flow tube 16.

その結果、プラズマ化領域31においては、そこを流通
する上記搬送ガスがプラズマ化される。尚本件明細書中
においてはプラズマ化手段17からのマイクロ波エネル
ギーによって搬送ガスがプラズマ化される領域をプラズ
マ化領域31と呼ぶ、またその領域31において、搬送
ガスの流通方向に対して最も上流側の箇所を入口31a
S最も下流側の箇所を出口31bと夫々呼ぶ。このプラ
ズマ化領域31はそこを流通するガスの種類、圧力や、
プラズマ化手段17から及ぼされるマイクロ波のエネル
ギーの大きさに応じて、その大きさが大きかったり小さ
かったりする。上記共振器18の内部に与えるマイクロ
波のエネルギーは、モニタ24で監視しながら制御部2
2を調節することにより、後述の被膜用微粒子は搬送ガ
スのプラズマによってその融点以上の温度に加熱し、微
粒子はその融点以上の温度には加熱しないような値にす
る。
As a result, in the plasma region 31, the carrier gas flowing therethrough is transformed into plasma. In this specification, the region where the carrier gas is turned into plasma by the microwave energy from the plasma-forming means 17 is referred to as the plasma-forming region 31, and in the region 31, the most upstream side with respect to the flow direction of the carrier gas Entrance 31a
The most downstream portions of S are respectively referred to as exits 31b. This plasma region 31 depends on the type and pressure of the gas flowing there,
Depending on the magnitude of the microwave energy exerted from the plasma generation means 17, the magnitude thereof may be large or small. The microwave energy given to the inside of the resonator 18 is controlled by the control unit 2 while being monitored by the monitor 24.
By adjusting 2, the fine particles for coating, which will be described later, are heated to a temperature equal to or higher than their melting point by the plasma of the carrier gas, but the fine particles are set to a value such that they are not heated to a temperature equal to or higher than their melting point.

上記の状態において微粒子供給手段Bから酸化アルミニ
ウムA1.O,の微粒子を、被膜用微粒子供給手段Cか
ら上記微粒子の融点よりも低い温度で蒸発する性質を有
しかつ上記微粒子とは異質な被膜用微粒子としてアルミ
ニウムの微粒子を流通管16へ向けて供給すると、それ
らは上記搬送ガスに乗って浮遊状態で流通管16内に流
れ込み、プラズマ化領域31に至る。このプラズマ化領
域31においては、そこに印加されるマ°イクロ波によ
ってプラズマ密度が所定の密度まで高くされているから
、上記アルミニウムの微粒子はそれの融点以上の温度に
まで上記搬送ガスのプラズマによって加熱されて溶融し
、その結果蒸発して原子状態となる。一方酸化アルミニ
ウムの微粒子は溶融されず微粒子のままの形態を保つ。
In the above state, aluminum oxide A1. Fine particles of aluminum are supplied from the coating fine particle supply means C to the flow pipe 16 as coating fine particles that have the property of evaporating at a temperature lower than the melting point of the fine particles and are different from the above fine particles. Then, they flow into the flow pipe 16 in a floating state on the carrier gas, and reach the plasma generation region 31. In this plasma generation region 31, the plasma density is increased to a predetermined density by the microwave applied there, so that the aluminum fine particles are heated to a temperature higher than their melting point by the plasma of the carrier gas. It is heated and melted, resulting in evaporation into its atomic state. On the other hand, aluminum oxide fine particles are not melted and maintain their fine particle form.

尚この場合、上記搬送ガスはプラズマ化領域31におい
てはプラズマ化されるが、ガス自体としてはさほど高温
化されていない。
In this case, although the carrier gas is turned into plasma in the plasma-forming region 31, the temperature of the gas itself is not so high.

そして上記のようにアルミニウムの微粒子の蒸発によっ
てできたアルミニウムの蒸気は上記浮遊状態の酸化アル
ミニウムの微粒子に接触して、その表面の全域にアルミ
ニウムの被膜となって均等に付着する。°上記のように
して被膜が付着した微粒子は上記プラズマ化領域31を
出ると、上記のさほど高温化されていない搬送ガスによ
って冷却される。そしてその微粒子は次に回収装置26
へ至り、そこのフィルタ28により捕捉される。
As described above, the aluminum vapor produced by the evaporation of the aluminum fine particles comes into contact with the suspended aluminum oxide fine particles, and forms an aluminum film that is evenly deposited over the entire surface of the aluminum oxide particles. Once the fine particles to which the film has been attached as described above exit the plasma generation region 31, they are cooled by the carrier gas, which is not heated to a very high temperature. The fine particles are then collected by a collection device 26.
and is captured by filter 28 there.

次に上記装置により化合物の被膜(−例として窒化チタ
ンTiN)が付着した微粒子(−例として酸化アルミニ
ウム)を製造する方法について説明する。この場合には
上記微粒子供給手段Bからは酸化アルミニウムの微粒子
を流通管16に供給する。
Next, a method for manufacturing fine particles (eg, aluminum oxide) to which a compound coating (eg, titanium nitride TiN) is attached using the above-mentioned apparatus will be described. In this case, the fine particles of aluminum oxide are supplied from the fine particle supply means B to the flow pipe 16.

また搬送ガス供給手段Aからは、上記微粒子の融点より
も低い温度で分解する性質を有しかつ上記微粒子とは異
質な被膜用成分を含んだガスであり、しかも搬送ガスと
して作用するガスとして、四塩化チタンTtC14とア
ンモニアNHffを流通管16に向は連続的に供給する
(反応の効率を上げる為に水素や窒素を混合したりアル
ゴン等の不活性ガスを混合してもよい)、またプラズマ
化領域31に与えるマイクロ波エネルギーは、酸化アル
ミニウムの微粒子は熔融せず、かつ、上記ガスはプラズ
マ化して分解するのに必要なエネルギーにする。上記の
ようにすることにより、プラズマ化領域31においては
、上記ガスはプラズマ化して分解する。そして分解した
成分のうち被膜用の成分即ちチタンと窒素とは化合して
化合物(窒化チタン)となり、その化合物が上記酸化ア
ルミニウムの微粒子の表面に被膜となって付着する。又
はそれら被膜用成分が酸化アルミニウムの□微粒子の表
面上において化合し、その表面に化合物(窒化チタン)
の被膜を形成する。このようにして窒化チタンの被膜が
付着した酸化アルミニウムの微粒子は前記と同様に回収
装置で回収される。
Further, from the carrier gas supply means A, a gas having a property of decomposing at a temperature lower than the melting point of the fine particles and containing a coating component different from the fine particles, and further acting as a carrier gas, is supplied. Titanium tetrachloride TtC14 and ammonia NHff are continuously supplied to the flow pipe 16 (hydrogen or nitrogen may be mixed or an inert gas such as argon may be mixed to increase the reaction efficiency), and plasma The microwave energy applied to the oxidizing region 31 is the energy necessary to not melt the aluminum oxide fine particles and to turn the gas into plasma and decompose it. By doing as described above, the gas is turned into plasma and decomposed in the plasma formation region 31. Of the decomposed components, the coating components, that is, titanium and nitrogen, combine to form a compound (titanium nitride), and the compound adheres to the surface of the aluminum oxide fine particles as a coating. Or, these coating components are combined on the surface of aluminum oxide fine particles, and a compound (titanium nitride) is formed on the surface.
Forms a film of The aluminum oxide fine particles to which the titanium nitride film has been attached in this way are recovered by the recovery device in the same manner as described above.

次に上記装置による被膜付着微粒子の製造の他の例を示
せば次の第1表の通りで、同表における微粒子を同表の
ガス及びマイクロ波エネルギーの条件のもとて前述と同
様に処理することによって、同表の製品を得ることがで
きる。
Next, another example of the production of film-attached fine particles using the above-mentioned apparatus is shown in Table 1 below. By doing this, the products listed in the table can be obtained.

第  1  表 注1) 被膜用成分を含んだガスでもある。尚搬送ガス
としてのアルゴン等の不活性ガスと、該被膜用成分を含
んだガスとしての窒素の両方を供給してもよい。
Table 1 Note 1) It is also a gas containing coating components. Note that both an inert gas such as argon as a carrier gas and nitrogen as a gas containing the coating component may be supplied.

次に上記微粒子供給手段Bの一例を示す第2図について
説明する。1は真空容器、1aは出口で、前記流通管に
接続される。2は吸引口で真空ポンプに接続される。3
は弁を示す、4はガス受入口である。5は原料支持具を
示し、容器1に固定された導電材製の支柱6,6とその
上端に取付けた原料支持台7とから成る。原料支持台7
はタングステンの板体(タングステンボートと称される
)を用いて形成されている。8は支持台7に乗せられた
原料を示す、9は原料の加熱手段として例示する通電加
熱用の電源で、前記支柱6に接続しである。
Next, FIG. 2 showing an example of the particulate supply means B will be explained. 1 is a vacuum container, and 1a is an outlet, which is connected to the flow pipe. 2 is connected to a vacuum pump through a suction port. 3
indicates a valve, and 4 is a gas inlet. Reference numeral 5 denotes a raw material support, which consists of pillars 6, 6 made of a conductive material fixed to the container 1 and a raw material support stand 7 attached to the upper end thereof. Raw material support stand 7
is formed using a tungsten plate (referred to as a tungsten boat). Reference numeral 8 indicates the raw material placed on the support stand 7. Reference numeral 9 represents a power supply for electrical heating, which is exemplified as heating means for the raw material, and is connected to the support column 6.

次に15は混合室で、弁12を介してガス受入口4に接
続しである。10は搬送ガス供給手段、13は化合物形
成用の反応性ガスの供給手段で、これらは夫々供給量調
整用の弁11.14を介して混合室15に接続しである
Next, 15 is a mixing chamber, which is connected to the gas inlet 4 via the valve 12. 10 is a carrier gas supply means, 13 is a supply means for a reactive gas for compound formation, and these are connected to the mixing chamber 15 through valves 11 and 14 for adjusting the supply amount, respectively.

このような構成のものにあっては、容器1内を所定の真
空度にした状態において、搬送ガス供給手段lOからの
搬送ガス又は反応性ガス供給手段からの反応性ガス若し
くはその両者を、混合室15、受入口4を通して容器1
内に供給し、容器1内を通して容器の出口1aから流通
管に向かわせる。また電源9から支柱6.6を介して原
料支持台7に通電し、支持台7をそれの有する電気抵抗
によって発熱させ・て原料8を加熱する。上記のような
操作を行うことにより原料8はそれが置かれた場所(微
粒子生成領域)において順次蒸発し、その近傍でその原
料8の微粒子が生成される。生成された微粒子は上記ガ
スの流れに乗うて出口1aから流通管に送出される。
With such a configuration, while the inside of the container 1 is at a predetermined degree of vacuum, the carrier gas from the carrier gas supply means 1O, the reactive gas from the reactive gas supply means, or both are mixed. Container 1 through chamber 15 and inlet 4
The liquid is supplied into the container 1 and directed from the outlet 1a of the container to the flow pipe. In addition, electricity is applied from the power source 9 to the raw material support stand 7 via the pillars 6.6, and the support stand 7 generates heat due to its electric resistance, thereby heating the raw material 8. By performing the above operations, the raw material 8 is sequentially evaporated at the place where it is placed (fine particle generation area), and fine particles of the raw material 8 are generated in the vicinity thereof. The generated fine particles are sent out from the outlet 1a to the flow pipe along with the flow of the gas.

尚被膜用微粒子供給手段Cに関しては上記手段Bと同様
の構成を利用できる。
As for the coating particulate supply means C, the same structure as the above means B can be used.

また上記構成の微粒子供給手段Bを用いる場合、前記説
明の流通管を通す搬送ガスあるいは被膜用成分を含むガ
スは、前記供給手段Aに代えて、夫々上記ガス供給手段
10.13から容器lを通して流通管16に供給しても
よい。
In addition, when using the particulate supply means B having the above structure, the carrier gas or the gas containing coating components passed through the flow pipe described above is passed from the gas supply means 10.13 to the container L instead of the supply means A. It may also be supplied to the flow pipe 16.

次に、上記微粒子供給手段B、Cとしては、夫々周知の
高周波加熱、プラズマアークによる加熱、アーク放電に
よる加熱、電子ビームによる加熱など任意の加熱手段を
用いた微粒子生成装置を利用できる。
Next, as the above-mentioned particulate supply means B and C, a particulate generation device using any heating means such as well-known high frequency heating, heating by plasma arc, heating by arc discharge, heating by electron beam, etc. can be used.

次に第3図は微粒子及び被膜用微粒子の供給手段の他の
例を示すもので、それらの手段を真空容器を共通にして
構成した例を示すものである。
Next, FIG. 3 shows another example of means for supplying fine particles and fine particles for coating, and shows an example in which these means are constructed using a common vacuum container.

このような構成のものは、二種の微粒子について各々の
生成用の雰囲気が同じでよい場合に有効に利用できる。
Such a configuration can be effectively used when the two types of fine particles can be generated in the same atmosphere.

なお、機能上前図のものと同−又は均等構成と考えられ
る部分には、前回と同一の符号にアルファベットのeを
付して重複する説明を省略した。
It should be noted that parts that are considered to have the same or equivalent structure as those in the previous figure in terms of function are given the same reference numerals as in the previous figure with the letter e, and redundant explanations are omitted.

(発明の効果) 以上のように本発明にあっては、プラ
ズマ化領域において搬送ガスのプラズマにより被膜用微
粒子を蒸発又は被膜用成分を含んだガスを分解させ、上
記被膜用微粒子の蒸気又は上記ガスの被膜用成分を浮遊
状態の微粒子の表面に付着させて、表面に異質の被膜を
付着させた微粒子を製造することができるは勿論のこと
、上記製造の場合、上記微粒子は浮遊状態においてその
表面に被膜を付着させるから、従来の如き微粒子相互の
凝集に伴なう粒径の大幅な増大を招くことなく上記の如
き被膜を有する微粒子の製造ができる効果があり、その
上に、各微粒子にあっては、各々の周囲全域に均等に被
膜が付着した微粒子にすることができる効果もある。
(Effects of the Invention) As described above, in the present invention, the coating particles are evaporated or the gas containing coating components is decomposed by the plasma of the carrier gas in the plasma region, and the vapor of the coating particles or the It goes without saying that it is possible to produce fine particles with a foreign film attached to the surface by attaching gas coating components to the surface of fine particles in a suspended state. Since the film is attached to the surface, it is possible to produce fine particles with the above-mentioned film without causing a large increase in particle size due to mutual agglomeration of the fine particles as in the conventional method. This also has the effect of making the particles uniformly coated over the entire periphery of each particle.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は本願の実施例を示すもので、第1図は微粒子製造
装置の縦断面略示図、第2図は微粒子供給手段の一例を
示す縦断面略示図、第3図は微粒子供給手段の他の例を
示す縦断面略示図。 A・・・搬送ガス供給手段、B・・・微粒子供給手段、
C・・・被膜用微粒子供給手段、31・・・プラズマ化
領域。 第2図 1a 第3因 ae 10e  /3e
The drawings show an embodiment of the present application, and FIG. 1 is a schematic vertical cross-sectional view of a particle production apparatus, FIG. 2 is a schematic vertical cross-sectional view showing an example of a particle supply means, and FIG. 3 is a schematic longitudinal cross-sectional view of a particle supply means. FIG. 7 is a schematic vertical cross-sectional view showing another example. A... Carrier gas supply means, B... Particulate supply means,
C... Coating particle supply means, 31... Plasma generation region. Figure 2 1a Third cause ae 10e /3e

Claims (1)

【特許請求の範囲】[Claims]  プラズマ化領域を備え、搬送ガスを上記プラズマ化領
域に通すと共に、その搬送ガスには微粒子を乗せて該プ
ラズマ化領域を浮遊状態で通過させ、更に該プラズマ化
領域を通る搬送ガスには、上記微粒子の融点よりも低い
温度で蒸発する性質を有しかつ上記微粒子とは異質な被
膜用微粒子、又は上記微粒子の融点よりも低い温度で分
解する性質を有しかつ上記微粒子とは異質な被膜用成分
を含んだガスをも乗せて、該プラズマ化領域において上
記搬送ガスのプラズマによりその被膜用微粒子を蒸発又
は被膜用成分を含んだガスを分解させ、上記被膜用微粒
子の蒸気又は上記ガスの被膜用成分を上記浮遊状態の微
粒子の表面に付着させることを特徴とする表面に異質の
被膜を付着させた微粒子の製法。
A carrier gas is passed through the plasma generation region, and fine particles are loaded on the carrier gas and passed through the plasma generation region in a suspended state. Fine particles for coating that have the property of evaporating at a temperature lower than the melting point of the fine particles and are different from the above fine particles, or fine particles for coating that have the property of decomposing at a temperature lower than the melting point of the fine particles and different from the above fine particles. A gas containing the components is also loaded, and the coating particles are evaporated or the gas containing the coating components is decomposed by the plasma of the carrier gas in the plasma region, and a vapor of the coating particles or a coating of the gas is formed. A method for producing fine particles having a foreign coating attached to the surface, characterized in that a component for use is attached to the surface of the fine particles in a suspended state.
JP61221466A 1986-09-19 1986-09-19 Preparation of fine particle stuck with heterogeneous film on surface Pending JPS6376802A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61221466A JPS6376802A (en) 1986-09-19 1986-09-19 Preparation of fine particle stuck with heterogeneous film on surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61221466A JPS6376802A (en) 1986-09-19 1986-09-19 Preparation of fine particle stuck with heterogeneous film on surface

Publications (1)

Publication Number Publication Date
JPS6376802A true JPS6376802A (en) 1988-04-07

Family

ID=16767157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61221466A Pending JPS6376802A (en) 1986-09-19 1986-09-19 Preparation of fine particle stuck with heterogeneous film on surface

Country Status (1)

Country Link
JP (1) JPS6376802A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009001890A (en) * 2007-06-25 2009-01-08 Ihi Corp Surface treatment device for nanoparticle, and method therefor
JP2011524245A (en) * 2008-05-19 2011-09-01 エボニック デグサ ゲーエムベーハー Phase transition method of matter

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009001890A (en) * 2007-06-25 2009-01-08 Ihi Corp Surface treatment device for nanoparticle, and method therefor
JP2011524245A (en) * 2008-05-19 2011-09-01 エボニック デグサ ゲーエムベーハー Phase transition method of matter

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