JPS6378543A - Wire bonding - Google Patents

Wire bonding

Info

Publication number
JPS6378543A
JPS6378543A JP61222692A JP22269286A JPS6378543A JP S6378543 A JPS6378543 A JP S6378543A JP 61222692 A JP61222692 A JP 61222692A JP 22269286 A JP22269286 A JP 22269286A JP S6378543 A JPS6378543 A JP S6378543A
Authority
JP
Japan
Prior art keywords
wire
bonding
wire bonding
laser beam
rotating polygon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61222692A
Other languages
Japanese (ja)
Inventor
Hiroshi Takayama
洋 高山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Original Assignee
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Manufacturing Co Ltd, Kansai Nippon Electric Co Ltd filed Critical Renesas Semiconductor Manufacturing Co Ltd
Priority to JP61222692A priority Critical patent/JPS6378543A/en
Publication of JPS6378543A publication Critical patent/JPS6378543A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01571—Cleaning, e.g. oxide removal or de-smearing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07511—Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07521—Aligning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]

Landscapes

  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 産】」Ｊ■旧１土旺 本発明は半導体ベレットやリードフレーム等に金属細線
を熱圧着するワイヤボンディング方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wire bonding method for thermocompression bonding a thin metal wire to a semiconductor pellet, lead frame, or the like.

従来■吸丘 ＩＣなどの半導体装置はリードフレームやセラミック基
板などに半導体ペレットをマウントする工程、半導体ペ
レット上の電極等に金やアルミニウムなどの金属細線を
ボンディングする工程、半導体ベレットの周辺を樹脂材
などで封止する工程などを経て製造される。上記ワイヤ
ボンディング工程で半導体ベレットのｍｉやこの電極を
外部に引出すリードに金属細線をボンディングする手段
として熱圧着を利用したものを第４図を参照して次に示
す。図において（１）は例えば金属板を打抜き加工した
平板状のリードフレーム、（２）はリードフレーム（１
）のベレットマウント部（１ａ）上にマウントされたＩ
Ｃなどの半導体ベレットで、上面の複数箇所にアルミニ
ウム膜等の被ワイヤボンディング箇所〔ポンディングパ
ッド）（３）　　（３）・・・を有する。（４）はリー
ドフレーム（１）を載置して加熱するヒータブロックで
、ワイヤボンディフグ時にヒータブロック（４）にてリ
ードフレーム（１）が加熱され、半導体ペレット（２）
が加熱される。（５）は金属細線、例えば金線、（６）
は金線（５）が上下方向に挿通されるキャピラリ、（７
）はキャピラリ　（６）を先端部で支持するホーン、（
８）はホーン（７）を介しキャピラリ（６）に超音波振
動を加える超音波据動源で、キャピラリ　（６）の先端
から突出する金線（５）の先端には水素トーチ〔図示せ
ず〕による溶断などで金球（５ａ）が形成される。Conventional ■ Semiconductor devices such as ICs are manufactured by mounting a semiconductor pellet on a lead frame or ceramic substrate, bonding thin metal wires such as gold or aluminum to electrodes on the semiconductor pellet, and surrounding the semiconductor pellet with resin material. It is manufactured through a process such as sealing. Referring to FIG. 4, a method using thermocompression bonding as a means for bonding a thin metal wire to mi of a semiconductor pellet and a lead for leading out this electrode to the outside in the wire bonding process will be described below. In the figure, (1) is a flat lead frame made by punching a metal plate, and (2) is a lead frame (1
) mounted on the bullet mount part (1a) of
A semiconductor pellet such as C, which has a plurality of wire bonding points (bonding pads) such as aluminum films on the upper surface (3) (3)... (4) is a heater block on which the lead frame (1) is placed and heated. During wire bonding, the lead frame (1) is heated by the heater block (4), and the semiconductor pellet (2) is heated.
is heated. (5) is a thin metal wire, e.g. gold wire, (6)
(7) is a capillary through which a gold wire (5) is inserted vertically;
) is the horn that supports the capillary (6) at its tip, (
8) is an ultrasonic stationary source that applies ultrasonic vibration to the capillary (6) via a horn (7), and a hydrogen torch (not shown) is attached to the tip of the gold wire (5) protruding from the tip of the capillary (6). ] A gold sphere (5a) is formed by fusing or the like.

上記装置によるワイヤボンディングはヒータブロック（
４）でリードフレーム（１）を介し半導体ペレット（２
）を加熱しておいて、ホーン（１０）で支持されたキャ
ピラリ　（６）の先端で金線（５）の金球（５ａ）を被
ワイヤボンディング箇所（３）に押し付け、そのままの
状態でホーン（１０）を介しキャピラリ　（６）に超音
波振動を加え、この時の超音波エネルギーで金球（５ａ
）を被ワイヤボンディング箇所（３）に熱圧着すること
で行われる。Wire bonding using the above device is performed on the heater block (
4), the semiconductor pellet (2) is passed through the lead frame (1).
), press the gold ball (5a) of the gold wire (5) against the wire bonding point (3) with the tip of the capillary (6) supported by the horn (10), and then press the horn in that state. Ultrasonic vibration is applied to the capillary (6) through (10), and the ultrasonic energy at this time causes the gold ball (5a
) to the wire bonding location (3).

■　＜”しよ゛と　る１　占 ところで、上述した熱圧着は、ボンディング部分を適正
温度に加熱しなければならない、ところが、半導体ペレ
ット（２）を十分な温度に加熱する間にリードフレーム
（１）の熱酸化が進行しリードフレーム側でボンディン
グ不良が生じるという不都合があった。■ <"Let's do it" 1 By the way, in the thermocompression bonding described above, the bonding part must be heated to an appropriate temperature. However, while heating the semiconductor pellet (2) to a sufficient temperature, the lead frame (1) ) thermal oxidation progresses, resulting in poor bonding on the lead frame side.

占　　゛　るための″ 本発明は、被ワイヤボンディング箇所にレーザ光をスボ
７）照射して加熱し、金属細線を熱圧着することを特徴
とし、上記レーザ光の照射は回転多面鏡によって分配さ
れ、複数の異なる被ワイヤボンディング箇所にスポット
的に光を照射すること、又は上記回転多面鏡を連続的に
回転させ、複数の異なる被ワイヤボンディング箇所に連
続的に光を照射することを実施手段とする。The present invention is characterized in that a laser beam is irradiated to the wire-bonding location (7) to heat it and thermocompression bond the thin metal wire, and the irradiation of the laser beam is distributed by a rotating polygon mirror. , the implementation means is to irradiate light spot-wise to a plurality of different wire bonding locations, or to continuously rotate the rotating polygon mirror to continuously irradiate light to a plurality of different wire bonding locations. do.

皿 被ワイヤボンディング箇所にレーザ光を照射して加熱す
ると、加熱時間が短縮され被ワイヤボンディング箇所の
熱酸化が防止される。When a laser beam is irradiated onto a dish wire bonding location to heat it, the heating time is shortened and thermal oxidation of the wire bonding location is prevented.

裏蓋■ 本発明に係るワイヤボンディング方法を半導体ペレット
のワイヤボンディングに適用した場合について第１図乃
至第３図を参照し以下説明する。第４図と同一参照符号
は同一物を示す。Back Cover ■ A case in which the wire bonding method according to the present invention is applied to wire bonding of semiconductor pellets will be described below with reference to FIGS. 1 to 3. The same reference numerals as in FIG. 4 indicate the same parts.

ます、第１図及び第２図において（１ａ）は例えば金属
板を打抜き加工した平板状リードフレームのベレットマ
ウント部、（２）はペレットマウント部（１ａ）上にマ
ウントされたＩＣなどの半導体ペレットで、上面の複数
箇所にアルミニウム膜等の被ワイヤボンディング箇所〔
ポンディングパッド〕　（３）（３）・・・を有する。In Figures 1 and 2, (1a) is a pellet mount part of a flat lead frame made by punching a metal plate, and (2) is a semiconductor pellet such as an IC mounted on the pellet mount part (1a). Then, wire bonding points such as aluminum film etc. are placed in multiple places on the top surface [
Ponding Pad] (3) (3)...

（５）は金属細線、例えば金線、（６）は金線（５）が
上下方向に挿通されるキャピラリで、キャピラリ（６）
の先端から突出する金線（５）の先端には水素トーチ〔
図示せず〕などにより金球（５ａ）が形成される。（９
）はレーザ光源、（１０）はレーザ光源（９）から照射
されたレーザ光、（１１）はレーザ光（１０）が入射し
て被ワイヤボンディング箇所である複数の異なるポンデ
ィングパッド（３）（３）・・・にレーザ光（１０）を
分配する回転多面鏡である。(5) is a thin metal wire, such as a gold wire, and (6) is a capillary through which the gold wire (5) is inserted in the vertical direction.
At the tip of the gold wire (5) protruding from the tip of the
[not shown], etc., to form a gold sphere (5a). (9
) is a laser light source, (10) is a laser beam irradiated from a laser light source (9), and (11) is a plurality of different bonding pads (3) (where the laser beam (10) is incident and where the wire is bonded). 3) It is a rotating polygon mirror that distributes the laser beam (10) to...

上記構成によるワイヤボンディングはレーザ光（ｌＯ）
でポンディングパッド（３）を約３００℃まで加熱して
おいてキャピラリ　（６）の先端で金線（５）の金球（
５ａ）をポンディングパッド（３）に押し付け、そのま
まの状態でキャピラリ（６）に超音波振動を加え、この
時の超音波エネルギーで金球（５ａ）をポンディングパ
ッド（３）に熱圧着することで行われる。ここで、第３
図に示すように、レーザ光（１０）のパルス（１０ａ）
をポンディングパッド（３）に照射した時、ポンディン
グパッド（３）の温度はほぼ瞬間的に約４００℃まで上
昇する。ところが、金球（５ａ）をポンディングパッド
（３）に押し付けると、その温度も下がっていくため、
圧着の際もレーザ光（１０）のパルス（１０ｂ）を照射
し続け、ポンディングパッド（３）の温度を約３００℃
に保持する。又、被ボンデイング箇所であるポンディン
グパッド（３）は異なる位置に複数個あってキャピラリ
　（６）もペレット上で逐次、移動していくためレーザ
光（１０）の照射位置もキャピラリ　（６）の位置に合
わせて変えていかなければならない、そこで、図に示す
ように、レーザ光源（９）から出た光を一旦、回転多面
ａｍ　（１１）に照射しその反射光をポンディングパッ
ド（３）にスポット照射する。そうすると、回転多面鏡
（１１）の回転によって上記反射光の方向が変わってい
くためその方向にポンディングパッド（３）が位置する
ように回転多面鏡（１１）の形状、回転方向等を設定し
ておけば、キャピラリ（６）の移動に伴ってレーザ光源
（９）からの光を各ポンディングパッド（３）（３）・
・・に分配することができる。この時、回転多面ｍ　（
１１）を間歇的に回転させてレーザ光（１０）を各ポン
ディングパッド（３）毎にスポット的に照射してもよく
、又、回転多面ｍ　（１１）を連続的に回転させてレー
ザ光（１０）を各ポンディングパッド（３）毎に繰返し
照射してもよい、更に、レーザ光源（９）より直接、回
転多面１ｔ　（１１）にレーザ光（１０）を照射する他
、レーザ光源（９）より光ファイバ〔図示せず〕で導光
して回転多面鏡（１１）に照射するようにしてもよい。Wire bonding with the above configuration uses laser light (lO)
Heat the bonding pad (3) to about 300℃, then connect the tip of the capillary (6) to the gold ball (5) of the gold wire (5).
Press 5a) onto the bonding pad (3), apply ultrasonic vibration to the capillary (6) in that state, and use the ultrasonic energy at this time to thermocompress the gold ball (5a) to the bonding pad (3). It is done by Here, the third
As shown in the figure, a pulse (10a) of a laser beam (10)
When the bonding pad (3) is irradiated with , the temperature of the bonding pad (3) rises almost instantaneously to about 400°C. However, when the gold ball (5a) is pressed against the pounding pad (3), its temperature also decreases.
During crimping, pulses (10b) of laser light (10) are continued to be applied to keep the temperature of the bonding pad (3) to approximately 300°C.
to hold. Furthermore, since there are multiple bonding pads (3) at different positions and the capillary (6) also moves sequentially on the pellet, the irradiation position of the laser beam (10) is also different from that of the capillary (6). Therefore, as shown in the figure, the light emitted from the laser light source (9) is first irradiated onto the rotating multifaceted am (11), and the reflected light is sent to the pad (3). spot irradiation. Then, as the rotating polygon mirror (11) rotates, the direction of the reflected light changes, so the shape, rotation direction, etc. of the rotating polygon mirror (11) must be set so that the bonding pad (3) is positioned in that direction. If the capillary (6) moves, the light from the laser light source (9) will be directed to each of the bonding pads (3) (3).
It can be distributed to... At this time, the rotating polygon m (
11) may be rotated intermittently to irradiate the laser beam (10) to each bonding pad (3) in spots, or the rotating polygon m (11) may be rotated continuously to irradiate the laser beam (10) to each bonding pad (3). (10) may be repeatedly irradiated to each bonding pad (3).Furthermore, in addition to irradiating the rotating polygon 1t (11) directly with the laser light (10) from the laser light source (9), the laser light source ( 9), the light may be guided through an optical fiber (not shown) and irradiated onto the rotating polygon mirror (11).

血ユｑ効且 本発明によれば、被ワイヤボンディング箇所にレーザ光
をスポット照射して加熱し、金属細線を熱圧着するよう
にしたから、ボンディングの際、被ワイヤボンディング
箇所が熱酸化されず良好なワイヤボンディングが得られ
る。According to the present invention, the spot to which the wire is to be bonded is irradiated with a laser beam to heat it and the thin metal wire is bonded by thermocompression, so that the wire to be bonded is not thermally oxidized during bonding. Good wire bonding can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図と第２図は本発明に係るワイヤボンディング方法
を示すその一実施手段の要部概略構成図と要部平面図、
第３図は本発明に係るレーザ光で加熱された被ワイヤボ
ンディング箇所の温度変化を示すグラフ、第４図は従来
の熱圧着を利用したワイヤボンディング方法を示す一具
体的手段の側面図である。 （３）−・−・被ワイヤボンディング箇所、（５）　−
・金属細線、　　　　（１０）　−レーザ光、（１１）
・一回転多面鏡。 特　許　出　願　人　　関西日本電気株式会社代　　　
　理　　　　人　　江　　　原　　　省　　苦節　２　
ｇ1 and 2 are a schematic configuration diagram and a plan view of a main part of one implementation means showing a wire bonding method according to the present invention,
FIG. 3 is a graph showing the temperature change of a wire bonding point heated by a laser beam according to the present invention, and FIG. 4 is a side view of one specific means showing a conventional wire bonding method using thermocompression bonding. . (3) --- Wire bonding location, (5) --
・Thin metal wire, (10) -Laser light, (11)
- Single rotation polygon mirror. Patent applicant: Kansai NEC Co., Ltd.
Rijin Gangwon Province Suffering 2
g

Claims (3)

【特許請求の範囲】[Claims] （１）被ワイヤボンディング箇所にレーザ光をスポット
照射して加熱し、金属細線を熱圧着することを特徴とす
るワイヤボンディング方法。(1) A wire bonding method characterized by spot-irradiating a laser beam onto a wire-bonding location to heat it and thermocompression-bonding a thin metal wire. （２）上記レーザ光の照射は回転多面鏡によって分配さ
れ、複数の異なる被ワイヤボンディング箇所にスポット
的に光を照射することを特徴とする特許請求の範囲第１
項記載のワイヤボンディング方法。(2) The irradiation of the laser light is distributed by a rotating polygon mirror, and the light is irradiated spot-wise onto a plurality of different wire bonding locations.
Wire bonding method described in section. （３）上記回転多面鏡を連続的に回転させ、複数の異な
る被ワイヤボンディング箇所にスポット光を繰返し照射
することを特徴とする特許請求の範囲第２項記載のワイ
ヤボンディング方法。(3) The wire bonding method according to claim 2, wherein the rotating polygon mirror is continuously rotated to repeatedly irradiate a plurality of different wire bonding locations with spot light.
JP61222692A 1986-09-20 1986-09-20 Wire bonding Pending JPS6378543A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61222692A JPS6378543A (en) 1986-09-20 1986-09-20 Wire bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61222692A JPS6378543A (en) 1986-09-20 1986-09-20 Wire bonding

Publications (1)

Publication Number Publication Date
JPS6378543A true JPS6378543A (en) 1988-04-08

Family

ID=16786416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61222692A Pending JPS6378543A (en) 1986-09-20 1986-09-20 Wire bonding

Country Status (1)

Country Link
JP (1) JPS6378543A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5614113A (en) * 1995-05-05 1997-03-25 Texas Instruments Incorporated Method and apparatus for performing microelectronic bonding using a laser
US6892927B2 (en) * 2003-04-24 2005-05-17 Intel Corporation Method and apparatus for bonding a wire to a bond pad on a device
WO2008155013A1 (en) * 2007-06-19 2008-12-24 Ultrasonics Steckmann Gmbh Ultrasonic welding station

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5614113A (en) * 1995-05-05 1997-03-25 Texas Instruments Incorporated Method and apparatus for performing microelectronic bonding using a laser
US6892927B2 (en) * 2003-04-24 2005-05-17 Intel Corporation Method and apparatus for bonding a wire to a bond pad on a device
WO2008155013A1 (en) * 2007-06-19 2008-12-24 Ultrasonics Steckmann Gmbh Ultrasonic welding station

Similar Documents

Publication Publication Date Title
US4281236A (en) Process for the manufacture of electrical contacts upon semiconductor components
JPS60148134A (en) Bonding device
JP3303832B2 (en) Flip chip bonder
CN1229857C (en) Solder bump and wire bonding with infrared heating
US8444044B2 (en) Apparatus and methods for forming wire bonds
JP2003037131A (en) Bonding equipment
JPS6378543A (en) Wire bonding
JP2004179484A (en) Manufacturing method of semiconductor device in which wires are bonded
US6135341A (en) Room temperature gold wire wedge bonding process
JPS61280626A (en) Wire-bonding
JP2770803B2 (en) Electronic component mounting equipment
JP3381563B2 (en) Method for manufacturing semiconductor device
JPS6313337A (en) Process of mounting semiconductor element
JPS6218725A (en) Wire bonding method
JP2792337B2 (en) Wire bonding equipment
JPH02104119A (en) Method for mounting surface acoustic wave element
JPS5823506Y2 (en) ultrasonic wire bonder
JPH036660B2 (en)
JPS6211238A (en) How to connect thin metal wires
JPH02310939A (en) Wire bonding
JPS5923535A (en) Wire bonding device
JP2523861B2 (en) Wire-bonding device and wire-bonding method
JPS63283140A (en) Wire-bonding device
JPS63232438A (en) Wire bonding method
JP2669321B2 (en) TCP tower mounted device