JPS6380253A - Resist composition for forming pattern - Google Patents
Resist composition for forming patternInfo
- Publication number
- JPS6380253A JPS6380253A JP22545686A JP22545686A JPS6380253A JP S6380253 A JPS6380253 A JP S6380253A JP 22545686 A JP22545686 A JP 22545686A JP 22545686 A JP22545686 A JP 22545686A JP S6380253 A JPS6380253 A JP S6380253A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- resist composition
- acetate
- film
- good
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 5
- PGMYKACGEOXYJE-UHFFFAOYSA-N pentyl acetate Chemical compound CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 claims abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 14
- 238000007639 printing Methods 0.000 abstract description 8
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 8
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 abstract description 6
- 229910001887 tin oxide Inorganic materials 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 6
- 239000002904 solvent Substances 0.000 abstract description 5
- 230000001680 brushing effect Effects 0.000 abstract description 3
- 239000011347 resin Substances 0.000 abstract description 3
- 229920005989 resin Polymers 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 abstract description 2
- 239000004709 Chlorinated polyethylene Substances 0.000 abstract description 2
- 239000003085 diluting agent Substances 0.000 abstract 1
- 238000000197 pyrolysis Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 16
- 239000011521 glass Substances 0.000 description 9
- 239000000976 ink Substances 0.000 description 9
- 238000007650 screen-printing Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 229910002012 Aerosil® Inorganic materials 0.000 description 3
- 229910002016 Aerosil® 200 Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 1
- OHBRHBQMHLEELN-UHFFFAOYSA-N acetic acid;1-butoxybutane Chemical compound CC(O)=O.CCCCOCCCC OHBRHBQMHLEELN-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical group [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004455 differential thermal analysis Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、スクリーン印刷工程におけるパターン形成用
レジスト組成物、特に、リフトオフ用としてのレジ２１
〜組成物に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a resist composition for forming a pattern in a screen printing process, particularly a resist composition for use in lift-off.
~Relating to compositions.
（従来の技術）
透明導電膜を基板上にパターン形成するパターン形成方
法として、金属酸化物を含むレジストインクを印刷後、
透明導電膜をコーティングした後レジストインクを除去
するいわゆるリフトオフ法を用いることは特開昭４９−
１１３５７３号公報や特開昭５２−３６４９５号公報等
にすでに開示されており、この方法は、透明導電膜を被
膜後、レジストインクを印刷しエツチングしてパターン
を形成する湿式のエツチングによる方法に比較して公害
がなく、工程も簡単であり、工業上有用な方法である。(Prior art) As a pattern forming method for forming a pattern of a transparent conductive film on a substrate, after printing a resist ink containing a metal oxide,
The use of the so-called lift-off method, in which resist ink is removed after coating a transparent conductive film, is disclosed in Japanese Patent Application Laid-Open No. 1973-
This method has already been disclosed in Japanese Patent Application Laid-open No. 113573 and Japanese Patent Application Laid-open No. 52-36495, etc., and this method is compared to a wet etching method in which a pattern is formed by printing and etching resist ink after coating a transparent conductive film. It is an industrially useful method as it does not cause any pollution and the process is simple.
このリフトオフ法に用いられるレジストインクとして必
要な特性は、次に述べる通りである。The characteristics necessary for the resist ink used in this lift-off method are as described below.
（１）耐久性が良いこと。(1) Good durability.
（２）スクリーン印刷可能であって、印刷後壁用がない
こと。(2) Screen printing is possible, and there is no need for wall printing after printing.
（３）耐熱性が良いこと。少なくとも５００’Ｃ＠後の
温度および空温への冷却過程でひび割れやまくれが発生
しないこと。(3) Good heat resistance. No cracking or blistering should occur at a temperature of at least 500'C@ or during the cooling process to air temperature.
（４）熱処理後、蒸着ガスの遮蔽効果が良好であること
。(4) After heat treatment, the shielding effect of vapor deposition gas should be good.
このような必要特性を具備したレジストインクを開発す
ることを目的として、例えば下記のような従来例が提案
されている。For the purpose of developing a resist ink having such necessary characteristics, the following conventional examples have been proposed, for example.
（１）炭酸バリウムを主成分としたレジストとして、Ｍ
ＳＮ−４２８レジスト（ＭｉｎＥｔｃｈ社製）が市販さ
れており、被膜形成時のパターンレジストとして使用さ
れている。(1) As a resist whose main component is barium carbonate, M
SN-428 resist (manufactured by MinEtch) is commercially available and is used as a pattern resist during film formation.
（２）また、特開昭５６−９６８９４号公報には、炭酸
バリウムを主成分としたレジストと、炭酸カルシウムと
、ブチルカルビノール
ロースとからなる改良品が提案されている。(2) Furthermore, JP-A-56-96894 proposes an improved product consisting of a resist containing barium carbonate as a main component, calcium carbonate, and butyl carbinolose.
（３）また、特開昭５２−３６４９５号公報には、窒化
硼素を主成分として、バインダーとして硝化綿、溶剤と
してブチルカルビノールを用いたレジストインクが提案
されている。(3) Furthermore, Japanese Patent Application Laid-Open No. 52-36495 proposes a resist ink containing boron nitride as a main component, using nitrified cotton as a binder, and butyl carbinol as a solvent.
（４）ざらに、特開昭５７−１６６３９０号公報には、
ガラスフリットと高融点金属酸化物とからなるマスキン
グインクをコーテイング材として使用した例が記載され
ている。(4) Zarani, Japanese Unexamined Patent Application Publication No. 166390/1983,
An example is described in which a masking ink consisting of glass frit and a high melting point metal oxide is used as a coating material.
（本発明が解決しようとする問題点）
しかしながら、前述した（１）〜（３）のレジス１〜に
あっては、前記のレジストの必要特性のうち特に（３）
の耐熱性については後工程の透明導電膜を形成する条件
によって大きく支配され、特に高温状態（例えば５５０
°Ｃ近傍）、急速加熱、急速冷却等の工程でひび割れや
まくれが生じ、熱安定性に欠けるという問題点があった
。(Problems to be Solved by the Present Invention) However, in resists 1 to (1) to (3) described above, among the necessary characteristics of the resist, particularly (3)
The heat resistance of
Celsius), cracks and blisters occur during rapid heating, rapid cooling, and other processes, resulting in a lack of thermal stability.
これを、前記のＭＳＮ−４２８レジストを例にとって説
明すると、予熱した後高温で完全に焼成すると高温時に
は変化しないが、炉から取り出して室温に戻すと基板と
レジストとの熱膨張率の違いによりレジストにはまくれ
やひび割れが生じた。To explain this using the MSN-428 resist as an example, if it is preheated and then completely baked at a high temperature, it will not change at high temperatures, but if it is taken out of the furnace and returned to room temperature, the resist will change due to the difference in thermal expansion coefficient between the substrate and the resist. Blisters and cracks appeared on the surface.
また、完全に焼成しない状態で炉から取り出した場合に
おいては、室温への冷却段階ではまくれやひび割れは生
じないが、蒸着時の加熱の時にレジスト内の樹脂成分が
ガスとして発生し、蒸着膜の不良を招来するという欠点
があった。Furthermore, if the resist is taken out of the furnace without being completely fired, no blisters or cracks will occur during the cooling stage to room temperature, but the resin components in the resist will be generated as gas during heating during vapor deposition, causing the vapor deposited film to deteriorate. It had the disadvantage of inviting defects.
また、（４）の場合には低融点のガラスフリットを使用
しているため加熱処理を施すと、下地のガラス基体と反
応して強固に密着しインク残留物の剥離が困難になると
いうリフトオフ法における大ぎな欠点があった。In addition, in the case of (4), since a glass frit with a low melting point is used, when heat treatment is applied, it reacts with the underlying glass substrate and adheres tightly, making it difficult to remove ink residue using the lift-off method. There was a major drawback.
（問題点を解決するための手段）
本発明は、このような従来の問題点に鑑みてなされたも
のであって、熱安定性に優れ残留レジストの剥離が容易
なリフトオフ用レジストを提供することを目的としてい
る。(Means for Solving the Problems) The present invention has been made in view of such conventional problems, and an object of the present invention is to provide a lift-off resist with excellent thermal stability and easy removal of residual resist. It is an object.
このような目的を達成するために、本発明においては、
重量比で酸化チタン微粒子（５μｍφ以下）を３０〜４
０％、溶剤としてのエチレングリコール、モノブチルエ
ーテルアセテートを３０〜４０％、残部を塩化ポリエチ
レン等の樹脂としたレジスト（例えば、山栄（株）製の
商品名ＳＰＲー５５７ーＷレジスト）にチキソトロピー
を増加させるための酸化珪素微粒子（例えば、日本アエ
ロジル（株）製の商品名エアロジル ２００＞を添加し
、ざらに希釈剤としてブチルカルビノールアセテート（
以下、Ｂ．Ｃ．Ａ＞を添加して、レジスト組成物を構成
している。In order to achieve such an objective, in the present invention,
30 to 4 titanium oxide fine particles (5 μm or less) by weight
0%, ethylene glycol as a solvent, 30 to 40% of monobutyl ether acetate, and the remainder is a resin such as chlorinated polyethylene (for example, SPR-557-W resist manufactured by Sanei Co., Ltd.). Silicon oxide fine particles (for example, Aerosil 200, manufactured by Nippon Aerosil Co., Ltd.) are added to increase the
Below, B. C. A> is added to constitute a resist composition.
このようなレジスト組成物による印刷インクは、熱安定
性が優れ、スクリーン印刷に好適であり、例えば大気中
での長時間の使用にも安定した印刷が可能である。また
、熱分解後の酸化錫膜の形成後は不要部を水により簡単
なブラッシングで容易に除去することができ、膜面には
１ラシキズ等がつかないので、高品位のパターン基板を
得ることができる。Printing inks made from such resist compositions have excellent thermal stability and are suitable for screen printing, allowing stable printing even when used for long periods of time in the atmosphere, for example. In addition, after the tin oxide film is formed after thermal decomposition, unnecessary parts can be easily removed by simple brushing with water, and no scratches or the like will be left on the film surface, making it possible to obtain a high-quality patterned substrate. Can be done.
（試験例）
以下、前記効果について試験例をもってざらに詳細に説
明する。(Test Example) Hereinafter, the above effects will be roughly explained in detail using a test example.
前記ＳＰＲー５５７ーＷレジストに対重るエアロジル
２００とＢ．Ｃ．Ａの混合比を検討した。Aerosil over the above SPR-557-W resist
200 and B. C. The mixing ratio of A was studied.
ここで、前記レジスト１Ｋ（ｊに対してエアロジル ２
００の添加量を０，１０．５０，１００Ｑと段階的に変
化させ、それぞれに対してレジスト中の溶剤をＢ、Ｃ，
Ａで置換し、その比率を０゜５．５０，１００％と段階
的に変化ざゼた。このように１６種類のレジスト組成物
を試作し、それぞれを１０時間以上混合器で練り込んだ
ものを比較検討したが、エアロジル ２００の添加量が
Ｏｑ以外のものはすべて良好なスクリーン印刷面を呈す
る結果を得た。また、Ｂ、Ｃ，Ａの置換比率が０％のも
のは、粘度がわずか１時間の使用で約５０ポイズ変化し
てしまい、使用に耐えないことも判明した。Here, for the resist 1K (j, Aerosil 2
The amount of 00 added was changed stepwise to 0, 10.50, 100Q, and the solvent in the resist was changed to B, C,
A was substituted, and the ratio was changed stepwise from 0°5.50% to 100%. In this way, 16 types of resist compositions were trial-produced and each was kneaded in a mixer for more than 10 hours and compared and studied, and all of the resist compositions with an addition amount of Aerosil 200 other than Oq exhibited good screen printing surfaces. Got the results. It was also found that the viscosity of a product in which the substitution ratio of B, C, and A was 0% changed by about 50 poise after only one hour of use, making it unusable.
次に、前記レジスト組成物について焼成に最適な温度を
検討した。Next, the optimum temperature for firing the resist composition was investigated.
本来、前記レジスト組成物は熱安゛定性に優れている半
面、示差熱分析によると分解点が５７０℃と高いため、
適正な焼成温度と基体の軟化温度が接近する点がわずか
に難点であるといえるが、５２０’Ｃの雰囲気温度で１
５分間焼成すれば、水によるブラッシングで容易にレジ
スＩ〜の組成物を除去することができ、剥離性が良好で
あることが判明した。なお、一般的には酸性溶液を用い
て剥離させるが、本発明のレジスト組成物を用いると、
水で容易に剥離することができ、工業上、有利である。While the above resist composition originally has excellent thermal stability, according to differential thermal analysis, its decomposition point is as high as 570°C.
It can be said that there is a slight difficulty in that the appropriate firing temperature and the softening temperature of the substrate are close to each other, but at an ambient temperature of 520'C,
After baking for 5 minutes, the composition of Regis I~ could be easily removed by brushing with water, and it was found that the releasability was good. Although stripping is generally done using an acidic solution, when the resist composition of the present invention is used,
It can be easily peeled off with water, which is industrially advantageous.
さらに、剥離に用いられた水の廃液を分析した結果、Ｔ
ｉＯ，５ｉ０２、ＳｎＯ２等の無機動粒子のみが検出さ
れ、他の有害物質は全く検出されなかった。したがって
、廃液処理の点においても有用なレジスト組成物である
ことが判明した。Furthermore, as a result of analyzing the waste water used for peeling, it was found that T
Only inorganic particles such as iO, 5i02, SnO2, etc. were detected, and no other harmful substances were detected at all. Therefore, it was found that the resist composition is useful also in terms of waste liquid treatment.
（使用例）
次に、本発明のレジス１〜組成物を用いて熱分解法によ
り基板上に酸化錫膜によるパターンを形成した使用例を
示す。(Example of use) Next, an example of use will be shown in which a pattern of a tin oxide film was formed on a substrate by a thermal decomposition method using the resist 1 to the composition of the present invention.
図（ａ）〜（ｄ）はパターン形成のための各工程を示す
断面図である。以下、各工程を順次説明する。Figures (a) to (d) are cross-sectional views showing each step for pattern formation. Each step will be explained in sequence below.
工程（ａ〉：
まず、前記５ＰＲ−５５７−Ｗレジスト１ＫＯに対して
エアロジル ２００を５０ＣＩ添加し、Ｂ。Step (a): First, 50CI of Aerosil 200 was added to 1KO of the 5PR-557-W resist, and B.
Ｃ，Ａで溶剤を５０％置換したものを混合し、１時間混
合器で錬り、レジスト組成物を調整した。C and A with 50% of the solvent replaced were mixed and kneaded in a mixer for 1 hour to prepare a resist composition.
この状態のレジス１〜組成物でスクリーン印刷機で洗浄
済みのガラス基板１上にネガマスク２を形成した。これ
を図（ａ＞に示す。Using the resist 1 to composition in this state, a negative mask 2 was formed on a cleaned glass substrate 1 using a screen printing machine. This is shown in Figure (a).
工程（ｂ）；
次に、スクリーン印刷したガラス基板１を５２０′Ｃに
設定された熱風循環焼成炉に投入し、１５分間加熱し、
ネガマスク２からガスを脱離させた。Step (b); Next, the screen-printed glass substrate 1 was placed in a hot air circulation firing furnace set at 520'C and heated for 15 minutes.
Gas was desorbed from the negative mask 2.
このときの高温焼成した状態のネガマスク２−の状態は
図（ｂ）に示すように、１１０２粒子とＳｉＯ２粒子の
集合体となっている。At this time, the state of the negative mask 2- in the high-temperature fired state is an aggregate of 1102 particles and SiO2 particles, as shown in Figure (b).
工程（Ｃ）：
次に、こうして得られた無殿粒子によるネガパターン状
態のガラス基板１をベルト式の常圧気相生成装置に投入
し、酸化錫膜を８００Ａ’の厚さに一面全体に生成させ
た。なお、成膜時のガラス基板１の温度は５００℃で実
施した。これを図（Ｃ）に示す。Step (C): Next, the glass substrate 1 with the negative pattern formed by the precipitate-free particles obtained in this way is put into a belt-type atmospheric pressure vapor phase generation device, and a tin oxide film is formed on the entire surface to a thickness of 800A'. I let it happen. Note that the temperature of the glass substrate 1 during film formation was 500°C. This is shown in Figure (C).
工程（ｄ）：
最後に、前記状態のガラス基板１を水によりブラッシン
グして残留レジスト組成物を除去した。Step (d): Finally, the glass substrate 1 in the above state was brushed with water to remove the residual resist composition.
剥離は非常に容易に行われ、膜面は良好でブラシ傷がな
いことも顕微鏡で確認できた。Peeling was very easy, and it was confirmed under a microscope that the film surface was in good condition and there were no scratches from the brush.
このように、パターン形成された最後状態を図（ｄ）に
示す。The final state of the pattern formed in this way is shown in Figure (d).
なお、この試作品についてパターン精度をヂエックする
とともに断線、ショートの有無をヂエックした結果、パ
ターン精度を±５０μｍ以内であり、断線もショー１〜
もないことを確認した。Furthermore, as a result of checking the pattern accuracy of this prototype as well as the presence or absence of disconnections and short circuits, the pattern accuracy was within ±50 μm, and the disconnections were within Show 1.
I confirmed that there was no such thing.
（発明の効果）
以上説明してきたように、この発明によれば、酸化チタ
ンを主成分としたレジストと、酸化珪素と、ブチＪレカ
ルビノールアセテートと、によりリフトオフ用レジスト
組成物を構成したため、高温に耐え、熱安定性に優れて
おり、また、残留物の剥離性が良好でキズのない良好な
膜面が得られる。(Effects of the Invention) As described above, according to the present invention, a lift-off resist composition is composed of a resist containing titanium oxide as a main component, silicon oxide, and buty-J-recarbinol acetate. It can withstand high temperatures, has excellent thermal stability, and has good removability of residues, resulting in a good film surface without scratches.
また、剥離を水によりようにに行うことができるので工
業上有利であり、廃液中に有害物質が含有されていない
ため、公害が発生する恐れがない。Furthermore, it is industrially advantageous because it can be peeled off with water, and since no harmful substances are contained in the waste liquid, there is no risk of causing pollution.
さらに、同一工程でパターン形成が可能であるとともに
工程を簡素化することができるのでコストを低減するこ
とが可能となる。Furthermore, since pattern formation is possible in the same process and the process can be simplified, costs can be reduced.
図はリフトオフ用レジスト組成物を用いて熱分解法によ
り基板上に酸化錫膜によるパターンを形成する各工程を
示す断面図でおる。
１ニガラス基板
２：ネガマスク（レジスト組成物）
２′：高温焼成した状態のネガマスク
３：酸化錫膜The figure is a cross-sectional view showing each step of forming a pattern of a tin oxide film on a substrate by a thermal decomposition method using a lift-off resist composition. 1 Glass substrate 2: Negative mask (resist composition) 2': Negative mask fired at high temperature 3: Tin oxide film
Claims (1)
チルカルビノールアセテートと、からなることを特徴と
するパターン形成用レジスト組成物。A pattern-forming resist composition comprising a resist containing titanium oxide as a main component, silicon oxide, and butyl carbinol acetate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22545686A JPS6380253A (en) | 1986-09-24 | 1986-09-24 | Resist composition for forming pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22545686A JPS6380253A (en) | 1986-09-24 | 1986-09-24 | Resist composition for forming pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6380253A true JPS6380253A (en) | 1988-04-11 |
| JPH0466501B2 JPH0466501B2 (en) | 1992-10-23 |
Family
ID=16829628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22545686A Granted JPS6380253A (en) | 1986-09-24 | 1986-09-24 | Resist composition for forming pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6380253A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008027967A (en) * | 2006-07-18 | 2008-02-07 | Fuji Electric Device Technology Co Ltd | Manufacturing method of semiconductor device |
-
1986
- 1986-09-24 JP JP22545686A patent/JPS6380253A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008027967A (en) * | 2006-07-18 | 2008-02-07 | Fuji Electric Device Technology Co Ltd | Manufacturing method of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0466501B2 (en) | 1992-10-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100289850B1 (en) | Method of coating substrate with silica precursor | |
| JP5412037B2 (en) | Siloxane resin, method for preparing siloxane resin, and antireflection coating composition | |
| JPH05148451A (en) | Composition that imparts nonadhesion and water repellency to tea article and processing method | |
| JP2961350B2 (en) | Method for manufacturing nesa film having fine pattern | |
| JPH03205462A (en) | Semi-water image developable photosensitive copper conductor compound | |
| WO2019208969A1 (en) | Enamel composition, manufacturing method therefor, and cooking utensils | |
| CN110746114B (en) | A kind of super-hydrophobic wear-resistant glaze coating and preparation method thereof | |
| JPH0466501B2 (en) | ||
| US3573908A (en) | Photographic technique for the selective deposition of a ceramic substrate glaze | |
| JPH10242137A (en) | Method for forming an insoluble coating on a substrate | |
| JP5990994B2 (en) | A method for producing a glass powder material and a porous vitreous membrane. | |
| CN101347054A (en) | Glass substrate having circuit pattern and process for producing the same | |
| US3705050A (en) | Glass article having roughened,enamel surface and method for forming same | |
| JPH03205461A (en) | Semi-water image developable photosensitive gold conductor compound | |
| JPS63265843A (en) | Ceramic color ink-printed glass panel and its production | |
| US3544508A (en) | Vitreous enamel composition to produce a matte finish on a glass surface | |
| KR100236344B1 (en) | Isolation layer fabricating method of plasma display panel apparatus of the same | |
| JPH04300903A (en) | Radiation-curable tin oxide precursor composition | |
| JPH08208271A (en) | Bending method for flat glass | |
| GB2074152A (en) | Coating method | |
| JPH0982137A (en) | Composition for forming transparent conductive film and method for forming transparent conductive film | |
| JPS6025397B2 (en) | Method for manufacturing glazed ceramic substrate | |
| JPH10241579A (en) | Back substrate for plasma display and method of manufacturing the same | |
| JPS5927961A (en) | Paste for forming transparent film and transparent film | |
| JPH0264172A (en) | Masking resist composition |