JPS6397253U - - Google Patents
Info
- Publication number
- JPS6397253U JPS6397253U JP19204386U JP19204386U JPS6397253U JP S6397253 U JPS6397253 U JP S6397253U JP 19204386 U JP19204386 U JP 19204386U JP 19204386 U JP19204386 U JP 19204386U JP S6397253 U JPS6397253 U JP S6397253U
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- semiconductor substrate
- lead electrode
- layer
- diffused resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 claims 3
- 239000012670 alkaline solution Substances 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Description
第１図は本考案の一実施例の要部を示す断面図
、第２図Ａ乃至Ｄは従来例を製造工程別に示す断
面図である。
１…Ｓｉ基板、２…ＳｉＯ２膜、５…拡散抵抗
、１１…耐アルカリ金属層、１２…Ａｌ層。
FIG. 1 is a sectional view showing a main part of an embodiment of the present invention, and FIGS. 2A to 2D are sectional views showing a conventional example according to manufacturing steps. DESCRIPTION OF SYMBOLS 1...Si substrate, 2... SiO2 film, 5...diffusion resistance, 11...alkali-resistant metal layer, 12...Al layer.
Claims (1)
拡散抵抗を覆うべく上記表面に形成された保護膜
と、該保護膜を形成した状態で上記半導体基板の
裏面にアルカリ溶液にてエツチング形成されたダ
イヤフラムと、上記拡散抵抗に連なるように上記
保護膜上に形成されたリード電極とを備え、上記
リード電極は上記保護膜に接して形成された耐ア
ルカリ金属層と該層上に積層して形成されたアル
ミニウム層とから成ることを特徴とするダイヤフ
ラム型半導体圧力センサ。 A diffused resistor formed on the surface of the semiconductor substrate, a protective film formed on the surface to cover the diffused resistor, and a protective film formed on the back surface of the semiconductor substrate with the protective film formed by etching with an alkaline solution. A diaphragm and a lead electrode formed on the protective film so as to be connected to the diffusion resistance, and the lead electrode is formed by laminating an alkali-resistant metal layer formed in contact with the protective film and on the layer. A diaphragm type semiconductor pressure sensor characterized by comprising an aluminum layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19204386U JPS6397253U (en) | 1986-12-12 | 1986-12-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19204386U JPS6397253U (en) | 1986-12-12 | 1986-12-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6397253U true JPS6397253U (en) | 1988-06-23 |
Family
ID=31146751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19204386U Pending JPS6397253U (en) | 1986-12-12 | 1986-12-12 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6397253U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010253650A (en) * | 2009-04-28 | 2010-11-11 | Yokogawa Electric Corp | Manufacturing method of silicon device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5816346A (en) * | 1981-02-23 | 1983-01-31 | ビデオ・タ−フ・インコ−ポレイテツド | Radom digits generator and game apparatus |
| JPS5961146A (en) * | 1982-09-30 | 1984-04-07 | Toshiba Corp | Manufacture of semiconductor device |
-
1986
- 1986-12-12 JP JP19204386U patent/JPS6397253U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5816346A (en) * | 1981-02-23 | 1983-01-31 | ビデオ・タ−フ・インコ−ポレイテツド | Radom digits generator and game apparatus |
| JPS5961146A (en) * | 1982-09-30 | 1984-04-07 | Toshiba Corp | Manufacture of semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010253650A (en) * | 2009-04-28 | 2010-11-11 | Yokogawa Electric Corp | Manufacturing method of silicon device |