JPS6399751U - - Google Patents
Info
- Publication number
- JPS6399751U JPS6399751U JP19606386U JP19606386U JPS6399751U JP S6399751 U JPS6399751 U JP S6399751U JP 19606386 U JP19606386 U JP 19606386U JP 19606386 U JP19606386 U JP 19606386U JP S6399751 U JPS6399751 U JP S6399751U
- Authority
- JP
- Japan
- Prior art keywords
- proton beam
- vacuum
- proton
- analyzer
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 claims description 5
- 230000001133 acceleration Effects 0.000 claims description 3
- 238000005211 surface analysis Methods 0.000 claims 3
- 230000004907 flux Effects 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 11
- 239000013078 crystal Substances 0.000 description 2
- 238000005381 potential energy Methods 0.000 description 1
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
Description
第１図はアナライザーの検出効率を測定するた
めの本考案による検出効率測定装置の構成図。第
２図は検出効率を測定するために、チヤンネルト
ロンを、アナライザー入射前のビームの途中でビ
ームに直角方向へ運動させることとした可能的な
装置の構成図。第３図は原子Ｍに陽子ｍが衝突し
た場合、衝突の前後に於ける速度関係説明図。第
４図は原子による陽子の散乱に於て、原子の前方
に生ずるシヤドウコーンの説明図。第５図はＰＥ
ＬＳに於て垂直入射散乱を説明するためのＧａＡ
ｓ結晶表層図。第６図は第５図の入射方向に於け
るＰＥＬＳの陽子エネルギー損失図。第７図はＰ
ＥＬＳに於て斜入射散乱を説明するためのＧａＡ
ｓ結晶表層図。第８図は第７図の入射方向に於け
るＰＥＬＳの陽子エネルギー損失図。第９図は電
子衝突による陽子エネルギーの損失増加によつて
第１層、第２層を識別できるという事を説明する
散乱断面図。第１０図はＰＥＬＳの原理構成図。
第１１図は陽子のポテンシヤルエネルギー配位図
。第１２図は低散乱角に於る散乱ビームの説明図
。第１３図は散乱角によるイールドの変化をＡｕ
，Ｓｉについて示すグラフ。第１４図はＰＥＬＳ
装置の実際を示す略斜視図。
１……アナライザ正極、２……マイクロチヤン
ネルプレート、３……アナライザ電源、４……位
置検出回路、５……入口孔、６……アンプ、７…
…チヤンネルトロン、８……第１カウンタ、９…
…第２カウンタ、１０……加速電極、１１……加
速電源、１３……アナライザ負極、１４……出口
孔、Ｐ……陽子ビーム。
FIG. 1 is a configuration diagram of a detection efficiency measuring device according to the present invention for measuring the detection efficiency of an analyzer. FIG. 2 is a configuration diagram of a possible device in which the channeltron is moved in a direction perpendicular to the beam in the middle of the beam before it enters the analyzer in order to measure detection efficiency. FIG. 3 is an explanatory diagram of the velocity relationship before and after the collision when a proton m collides with an atom M. FIG. 4 is an explanatory diagram of a shadow cone that occurs in front of an atom when protons are scattered by the atom. Figure 5 shows PE
GaA to explain normal incidence scattering in LS
s crystal surface diagram. FIG. 6 is a PELS proton energy loss diagram in the incident direction of FIG. 5. Figure 7 is P
GaA for explaining oblique incidence scattering in ELS
s crystal surface diagram. FIG. 8 is a proton energy loss diagram of PELS in the incident direction of FIG. 7. FIG. 9 is a scattering cross-sectional view illustrating that the first layer and the second layer can be distinguished by increased loss of proton energy due to electron collision. Figure 10 is a diagram showing the principle configuration of PELS.
Figure 11 is a potential energy configuration diagram of protons. FIG. 12 is an explanatory diagram of a scattered beam at a low scattering angle. Figure 13 shows the change in yield due to scattering angle for Au
, a graph shown for Si. Figure 14 is PELS
FIG. 2 is a schematic perspective view showing the actual device. DESCRIPTION OF SYMBOLS 1... Analyzer positive electrode, 2... Microchannel plate, 3... Analyzer power supply, 4... Position detection circuit, 5... Inlet hole, 6... Amplifier, 7...
...Channel tron, 8...1st counter, 9...
...second counter, 10...acceleration electrode, 11...acceleration power source, 13...analyzer negative electrode, 14...exit hole, P...proton beam.
Claims (1)
オン源Ａと、イオン源Ａから生じた陽子ビームを
真空中に於て偏向させるマグネツトＢと、陽子ビ
ームを真空中で加速して試料〓に当て試料〓で散
乱された散乱角Θ＝１８０°の陽子ビームを逆に
通して減速する加減速管Ｃ，Ｄと、試料〓を超高
真空中に保持する超高真空チヤンバと、減速され
た陽子ビームを偏向させるマグネツトＥ，Ｆと、
偏向された陽子ビームを電圧Ｖ０を印加した極板
１，１３の間に負極１３側の入力孔５から斜めに
入射させ負極１３に設けたマイクロチヤンネルプ
レート２に落下するまでに進む飛程Ｌから陽子の
エネルギーＥａを測定するアナライザーＧとより
なり、アナライザーＧの正極１には、陽子ビーム
Ｐの進行方向延長線上に出口孔１４が穿孔され、
さらに陽子ビームＰの進行延長線上には加速電極
１０があつて陽子を加速し、加速された陽子を検
出するチヤンネルトロン７が設けられており、ア
ナライザ電圧Ｖ０を正負極板に与えない状態で、
陽子ビームを入口孔５、出口孔１４を通して直進
させ、チヤンネルトロン７によつて検出し、全陽
子束Ｇ１を求めることとし、アナライザ電圧Ｖ０
を正負極板に印加して、陽子ビームを曲げマイク
ロチヤンネルプレート２に到達させ、マイクロチ
ヤンネルプレート２に到達した全ての陽子の数を
合計して、アナライザーで検出された陽子束Ｃ２
を求め、検出効率η＝Ｃ２／Ｃ１を求める事がで
きるようにした事を特徴とする表面解析装置。 (2) 加速電極１０に加える電圧が２ｋＶ以上で
ある事を特徴とする実用新案登録請求の範囲第(1
)項記載の表面解析装置。 (3) 加速電極１０に加える電圧が３ｋＶ以上で
ある事を特徴とする実用新案登録請求の範囲第(2
)項記載の表面解析装置。[Claims for Utility Model Registration] (1) An ion source A kept in a vacuum that generates a proton beam, a magnet B that deflects the proton beam generated from the ion source A in a vacuum, and a magnet B that deflects the proton beam in a vacuum. Acceleration/deceleration tubes C and D decelerate the proton beam, which is accelerated in vacuum and applied to the sample and scattered by the sample with a scattering angle Θ=180°, and the sample is held in an ultra-high vacuum. An ultra-high vacuum chamber, magnets E and F that deflect the decelerated proton beam,
The deflected proton beam is incident obliquely from the input hole 5 on the negative electrode 13 side between the electrode plates 1 and 13 to which a voltage V0 is applied, and the distance L that it travels until it falls onto the microchannel plate 2 provided on the negative electrode 13 is calculated. The positive electrode 1 of the analyzer G is provided with an exit hole 14 on the extension line in the traveling direction of the proton beam P.
Further, an accelerating electrode 10 is placed on the extension line of the proton beam P to accelerate the protons, and a channeltron 7 is provided for detecting the accelerated protons. ,
The proton beam is made to advance straight through the entrance hole 5 and the exit hole 14, and is detected by the channeltron 7 to obtain the total proton flux G1 , and the analyzer voltage V0
is applied to the positive and negative electrode plates to bend the proton beam and reach the microchannel plate 2, and the number of all protons that have reached the microchannel plate 2 is summed to calculate the proton flux C2 detected by the analyzer.
A surface analysis device characterized in that it is capable of determining the detection efficiency η=C 2 /C 1 . (2) Utility model registration claim No. 1 characterized in that the voltage applied to the accelerating electrode 10 is 2 kV or more
) The surface analysis device described in item ). (3) Utility model registration claim No. 2 characterized in that the voltage applied to the accelerating electrode 10 is 3 kV or more.
) The surface analysis device described in item ).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19606386U JPS6399751U (en) | 1986-12-19 | 1986-12-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19606386U JPS6399751U (en) | 1986-12-19 | 1986-12-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6399751U true JPS6399751U (en) | 1988-06-28 |
Family
ID=31154533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19606386U Pending JPS6399751U (en) | 1986-12-19 | 1986-12-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6399751U (en) |
-
1986
- 1986-12-19 JP JP19606386U patent/JPS6399751U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5166521A (en) | Ion-scattering spectrometer | |
| Gruntman et al. | H atom detection and energy analysis by use of thin foils and TOF technique | |
| JPS6399751U (en) | ||
| US20020195556A1 (en) | Mass spectrometer | |
| JP2678059B2 (en) | Electron beam equipment | |
| EP0501257B1 (en) | Ion scattering spectrometer | |
| JPS6240147A (en) | Ion detector | |
| JPH0637564Y2 (en) | Neutral particle scattering analyzer | |
| US7242008B2 (en) | Bipolar ion detector | |
| JPS6399750U (en) | ||
| JPS6399665U (en) | ||
| JP3112965B2 (en) | Neutral particle energy analyzer | |
| JP4755055B2 (en) | Scattered ion analyzer and method | |
| WO1993021542A1 (en) | Particle analysing instrument | |
| JPS63106055U (en) | ||
| JPH02165038A (en) | Time-of-flight particle analyzer | |
| JPS6240148A (en) | Ion detector | |
| JP2528906B2 (en) | Voltage measuring device | |
| JPH04317350A (en) | Noncontact potential measuring apparatus | |
| JPH0520855B2 (en) | ||
| JP2926666B2 (en) | Direct impact ion scattering spectrometer | |
| JP2003068245A (en) | Time-of-flight mass spectrograph having quantitative energy correcting function | |
| JPS5833643Y2 (en) | Ion beam current detection device in mass spectrometer | |
| JPH05129000A (en) | Ion gun for recti-collision ion scattering spectroscopic use | |
| CN115769338A (en) | Improved ion conversion plate |