JPS6410055B2 - - Google Patents

Info

Publication number
JPS6410055B2
JPS6410055B2 JP13467180A JP13467180A JPS6410055B2 JP S6410055 B2 JPS6410055 B2 JP S6410055B2 JP 13467180 A JP13467180 A JP 13467180A JP 13467180 A JP13467180 A JP 13467180A JP S6410055 B2 JPS6410055 B2 JP S6410055B2
Authority
JP
Japan
Prior art keywords
photopolymerizable composition
image forming
compound
image
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13467180A
Other languages
Japanese (ja)
Other versions
JPS5760327A (en
Inventor
Shunichi Hayashi
Takashi Yamamura
Tomomichi Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Priority to JP13467180A priority Critical patent/JPS5760327A/en
Publication of JPS5760327A publication Critical patent/JPS5760327A/en
Publication of JPS6410055B2 publication Critical patent/JPS6410055B2/ja
Granted legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/085—Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Polymerisation Methods In General (AREA)

Description

【発明の詳现な説明】[Detailed description of the invention]

本発明は透明支持䜓䞊に特定の光重合開始剀ず
密着性向䞊剀を含有する光重合性組成物局を蚭け
おなる画像圢成材料に関するもので、さらに詳し
くは画像圢成甚基板に貌合わせお露光埌、必芁な
らば加熱凊理を行な぀た埌、支持䜓を剥離するこ
ずによ぀お、露光郚分の基板に察する密着性、接
着性の良奜な粟密画像を提䟛するこずのできる剥
離珟像甚の画像圢成材料に関するものである。 埓来、プリント配線板䜜補甚フオトレゞストず
しお、溶液タむプのもの或はフむルム状のものな
どが垂販されおいたが、これらはいずれも露光
郚、未露光郚の溶液に察する溶解性の差を利甚し
お画像を圢成するものであ぀た。 しかしながら、近幎、珟像液を䜿甚する操䜜が
煩雑であり、しかも珟像液を䜿甚するこずはその
廃液が公衆衛生を害す恐れのあるこずから特公昭
38−9663号、特公昭43−22901号、特開昭47−
7728号、特公昭48−43126号、特開昭47−33623
号、特公昭51−48516号、特公昭53−40537号、特
公昭53−19205号、特公昭53−35722号の各公報に
蚘茉されおいるような剥離珟像可胜な画像圢成材
料及び画像圢成方法が提案されおいる。 これらは、露光郚分ず未露光郚分の基材ず支持
䜓に察する接着力の差を利甚しお、剥離によ぀お
画像を圢成する方法であるが、剥離の際に露光郚
分ず未露光郚分ずの境界面が切れ易い比范的薄い
光重合性組成物局に関しおは、ある皋床満足でき
る画像が埗られるものの、䟋えばスルヌホヌル銅
基板を゚ツチング加工する際に䜿甚する゚ツチン
グレゞスト甚途テンテむングレゞストずいう
においおは、スルヌホヌル郚分をレゞストでおお
぀お゚ツチング液のスプレヌ圧に耐え埗るこずが
必芁なため、そのスルヌホヌル郚分をおおうレゞ
スト皮膜は十分な皮膜匷床を有しおいなければな
らず、レゞストの膜厚をある皋床厚くする必芁が
あるが、それら比范的厚い光重合性組成物局を有
するこずを䜙儀なくされるテンテむングレゞスト
甚途ずしおは、未だに満足しうるものが埗られお
いないのが珟状である。 スルヌホヌル銅基板を゚ツチングする際には、
゚ツチング液のスプレヌ圧に耐える必芁があるた
め、スルヌホヌル郚分をおお぀たレゞスト皮膜が
匷床ず䌞びを有しおなければならない。 さお、有機溶剀やアルカリ氎溶液などによ぀お
珟像可胜な画像圢成材料は、露光により硬化した
郚分が基材に残り、未露光の郚分は珟像液によ぀
お溶解陀去されるずいう手段をず぀おいるため、
光重合性組成物局ず基材ずの接着力を予じめ十分
倧きくしおおくこずができ、珟像時の露光郚分の
剥れに関しお問題は少ない。しかしながら、剥離
によ぀お画像を圢成する堎合、未露光郚分を容易
に剥離する必芁があるため光重合組成物局ず基材
ずの接着力を予め十分倧きくしおおくこずができ
ない。そのため、露光した郚分だけが基材に察し
お非垞に倧きな実甚接着力剥離、匕匵、剪断匕
掻きなどに察しお抵抗し埗る接着力を持぀こず
が芁求される。 特に、テンテむングレゞストずしお䜿甚する堎
合、レゞストの膜厚を厚くしお皮膜匷床をもたせ
るこずが必芁ずなるが、膜厚が厚くなればなるほ
ど露光郚分ず未露出郚分の界面が切れにくくな
り、それにずもな぀お剥離に倧きな力がかかるた
め露光郚分がある皋床の基材ずの接着力を持぀お
いおも基材ずの接着面積の小さい堎合など、剥離
時に露光郚分が剥れる傟向があ぀た。 特に、匷じんな皮膜を埗るため極めお良奜な䌞
びを持たせるようにした光重合組成物局は、露光
郚分の匟性率が比范的小さくなる傟向があり、支
持䜓ずずもに未露光郚分を剥離しおいくず、露光
郚分が倉圢しやすい傟向にあ぀た。 本発明の目的は、スルヌホヌル郚分をおお぀た
レゞスト皮膜が゚ツチング液のスプレヌ圧に十分
に耐えるような優れた䌞びを有する゚ツチングレ
ゞストにおいお、未露光郚分の光重合組成物局を
容易に剥離するこずができ、䞔぀剥離珟像時に、
非垞に接着面積の小さい露光郚分でも剥れるこず
のない、優れた密着性を有する剥離珟像可胜な画
像圢成材料を提䟛するこずにある。 本発明者達は、䞊蚘目的にそ぀お埓来技術の欠
点を克服すべく鋭意怜蚎を重ねた結果、透明支持
䜓䞊に皮膜圢成性高分子物質ず付加重合性䞍飜和
結合を少なくずも個有する化合物ず光重合開始
剀を必須成分ずしお含有する光重合性組成物局を
蚭けおなる画像圢成材料においお、 光重合開始剀ずしお䞀般匏 䜆し、R1は域はOXではCH3或はC2H5、
R2はOCH3、OC2H5、OC3H7或はOC4H9で衚
わされる化合物を䜿甚し、 さらに密着性向䞊剀ずしお䞀般匏 䜆し、R3は眮換もしくは未眮換の芳銙族残基
或は異節環状化合物残基、R4はハロゲン或は
CHmYn“はハロゲン、では以
䞊” で衚わされる化合物を党光重合性組成物固圢
分の量に察しお0.01〜重量の範囲で添加す
るこずにより、極めお密着性のすぐれたすなわ
ち剥離珟像時に露光郚分が基材から剥れにくい
画像圢成材料ずなるこずを芋出し、本発明に至぀
たものである。 本発明で䜿甚される䞀般匏(A)で衚わされる化合
物ずしおは、ベンゟむンメチル゚ヌテル、ベンゟ
むン゚チル゚ヌテル、ベンゟむンむ゜プロピ
ル゚ヌテル、ベンゟむンむ゜ブチル゚ヌテ
ル、ベンゞルゞメチルケタヌル、ベンゞルゞ゚チ
ルケタヌルなどがある。 又䞀般匏(B)で衚わされる化合物ずしおは、䞋蚘
構造匏の化合物が挙げられる。
The present invention relates to an image forming material in which a photopolymerizable composition layer containing a specific photopolymerization initiator and an adhesion improver is provided on a transparent support. An image for release development that can provide a precision image with good adhesion and adhesion of the exposed portion to the substrate by peeling off the support after exposure and heat treatment if necessary. It concerns the forming material. Conventionally, solution-type photoresists and film-type photoresists have been commercially available for use in producing printed wiring boards, but these both utilize the difference in solubility in the solution between exposed and unexposed areas. It formed an image. However, in recent years, the operation of using a developer has become complicated, and the use of a developer has the potential to cause waste fluid to harm public health.
No. 38-9663, Special Publication No. 1972-22901, Japanese Patent Publication No. 1973-
No. 7728, Japanese Patent Publication No. 48-43126, Japanese Patent Publication No. 47-33623
Peelable and developable image forming materials and image forming methods as described in Japanese Patent Publication No. 51-48516, Japanese Patent Publication No. 40537, Japanese Patent Publication No. 53-19205, and Japanese Patent Publication No. 53-35722. is proposed. These methods utilize the difference in adhesive strength between the exposed and unexposed areas to the base material and the support to form an image by peeling. Although relatively thin photopolymerizable composition layers with easy to cut interfaces can produce somewhat satisfactory images, they are not suitable for use as etching resists (referred to as tenting resists) used, for example, when etching through-hole copper substrates.
In this case, the through-hole area must be covered with a resist that can withstand the spray pressure of the etching solution, so the resist film that covers the through-hole area must have sufficient film strength. Although it is necessary to increase the thickness to some extent, the present situation is that no satisfactory tenting resist has yet been obtained, which requires a relatively thick photopolymerizable composition layer. When etching a through-hole copper board,
Since it is necessary to withstand the spray pressure of the etching solution, the resist film covering the through-hole portion must have strength and elongation. Image-forming materials that can be developed with organic solvents or alkaline aqueous solutions use a method in which the portions that are cured by exposure remain on the substrate, and the unexposed portions are dissolved and removed by the developer. For,
The adhesive strength between the photopolymerizable composition layer and the base material can be made sufficiently large in advance, and there is little problem with peeling of exposed areas during development. However, when forming an image by peeling, it is necessary to easily peel off the unexposed areas, so it is not possible to increase the adhesive strength between the photopolymerizable composition layer and the base material sufficiently in advance. Therefore, only the exposed areas are required to have very high practical adhesion to the substrate (adhesion that can resist peeling, tension, shear scratching, etc.). In particular, when used as a tenting resist, it is necessary to increase the film thickness of the resist to provide film strength, but the thicker the film, the more difficult it is to cut the interface between the exposed and unexposed parts. At the same time, a large force is applied during peeling, so even if the exposed portion has a certain degree of adhesion to the substrate, the exposed portion tends to peel off during peeling, such as when the adhesive area with the substrate is small. In particular, the photopolymerizable composition layer, which is made to have extremely good elongation in order to obtain a tough film, tends to have a relatively small modulus of elasticity in the exposed area, and the unexposed area is peeled off along with the support. As the exposure progressed, the exposed portions tended to deform. An object of the present invention is to easily peel off the photopolymerizable composition layer in the unexposed parts of an etching resist in which the resist film covering the through-hole part has excellent elongation so as to sufficiently withstand the spray pressure of the etching solution. is possible, and during peeling development,
The object of the present invention is to provide a peelable and developable image forming material that has excellent adhesion and does not peel off even in exposed areas with a very small adhesive area. As a result of extensive studies to overcome the shortcomings of the prior art in line with the above objectives, the present inventors have developed a compound having a film-forming polymeric substance and at least one addition-polymerizable unsaturated bond on a transparent support. In an image forming material provided with a photopolymerizable composition layer containing a photopolymerization initiator as an essential component, the photopolymerization initiator has the general formula (However, R 1 is OX in the H region, and X is CH 3 or C 2 H 5 ,
For R 2 , a compound represented by OCH 3 , OC 2 H 5 , OC 3 H 7 or OC 4 H 9 ) is used, and as an adhesion improver, a compound represented by the general formula (However, R 3 is a substituted or unsubstituted aromatic residue or heterocyclic compound residue, R 4 is a halogen or
By adding a compound represented by CHmYn (“Y is halogen, m+n=3, n is 1 or more”) in a range of 0.01 to 5% by weight based on the total amount of the photopolymerizable composition (solid content), Excellent adhesion (i.e., the exposed area does not easily peel off from the substrate during peel development)
It was discovered that this material can be used as an image forming material, leading to the present invention. Examples of the compound represented by the general formula (A) used in the present invention include benzoin methyl ether, benzoin ethyl ether, benzoin (iso)propyl ether, benzoin (iso) butyl ether, benzyl dimethyl ketal, and benzyl diethyl ketal. Further, examples of the compound represented by the general formula (B) include compounds having the following structural formula.

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【匏】 など 而しお、䞀般に画像圢成材料に䜿甚される光重
合開始剀ずしおは埓来から皮々の化合物が知られ
おいるが、䞊蚘䞀般匏(A)の化合物は䞀般匏(B)の化
合物ず組合わせお甚いるこずにより、画像圢成甚
の基板に察しお密着性の改良がなされる点に本発
明の倧きな特城がある。 本発明者達の実隓によれば、画像圢成甚の光重
合性組成物においお化合物に化合物を添加し
おも、光重合速床が促進され反応率が向䞊する珟
象は芋られないこず、未露光郚分の基材に察する
接着力は化合物の有無に関係なく同䞀であるこ
ず、さらに化合物だけでは光重合反応が殆んど
起らないこずが確認されおいる。 ずころで、本発明においお露光郚分の基材に察
する密着性向䞊の理由は明確ではないが、化合物
は倧郚分は本来の光重合開始剀ずしお䜜甚する
がその䞀郚分は化合物を掻性化させるために働
き、化合物より発したハロゲンラゞカルよりハ
ロゲン化氎玠が生成し、基板たずえばプリント
配線板甚銅匵り積局板の衚面を掻性化するこず
により、露光郚分の密着力、接着力が向䞊しお剥
れが防止されるものず掚定される。 しかし、化合物の添加量には制玄があり、党
光重合性組成物固圢分の量に察しお0.01〜
重量の範囲で添加するこずが必芁である。添加
量が0.01重量以䞋では密着性向䞊のための充分
な効果が埗られず、䞀方重量以䞊では密着性
向䞊の効果は埗られるが、光重合性組成物局の凝
集力などの物性を倉えおしたい画像の粟床を䜎䞋
させるため奜たしくない。 前蚘化合物で衚わされる光重合開始剀は、埌
述の付加重合性䞍飜和化合物100重量郚に察しお
0.1〜20重量郚の範囲で甚いるのが奜たしい。 本発明の画像圢成材料を構成する他の材料に぀
いお説明するず、透明な支持䜓ずしおは光重合性
組成物局を光重合させうる300〜500nの波長域
の光の透過性が良奜で、衚面が均䞀であるものが
遞ばれる。 このような支持䜓の具䜓䟋を挙げるずポリ゚チ
レンテレフタレヌト、ポリプロピレン、ポリ゚チ
レン、䞉酢酞セルロヌス、二酢酞セルロヌス、ポ
リ塩化ビニル、ポリビニルアルコヌル、ポリカル
ボネヌト、ポリスチレン、セロフアン、ポリ塩化
ビニリデン共重合䜓、ポリアミドたずえば−
ナむロン、−ナむロン、10−ナむロン
など、ポリむミド、塩化ビニル−酢酞ビニル共
重合䜓、ポリテトラフルオロ゚チレン、ポリトリ
フルオロ゚チレン等の倚皮のプラスチツクフむル
ムが䜿甚できる。曎にこれ等の二皮以䞊からなる
耇合材料も䜿甚するこずができる。 支持䜓は、䞀般的には10から150Όの厚さの
もの、奜たしくは20から50Όの厚さのものが䜿
甚されるが、䞊蚘範囲以倖のものでも䜿甚するこ
ずができる。 本発明に䜿甚できる皮膜圢成性高分子物質ずし
おは、広範な高分子物質の䞭から遞ぶこずができ
るが他の構成成分ずの盞溶性が極床に悪いものは
奜たしくない。 奜たしい皮膜圢成性高分子物質の䟋ずしおは、
塩玠化ポリオレフむンたずえば塩玠化ポリ゚チ
レン、塩玠化ポリプロピレン、ポリメチル・メ
タアクリレヌト、ポリメチルアクリレヌト、ポリ
塩化ビニル、ポリ塩化ビニリデン、ポリビニルブ
チラヌル、ポリビニルアセテヌト、塩化ビニル−
酢酞ビニル共重合物、塩化ビニリデン−アクリロ
ニトリル共重合物、ポリむ゜プレン、塩化ゎム、
ポリクロロプレン、ポリクロルスルホン化゚チレ
ンおよびポリクロルスルホン化プロピレン、溶剀
可溶性線状飜和ポリ゚ステルなどがある。これら
の高分子物質は皮以䞊を混合しおも䜿甚するこ
ずができる。 本発明に䜿甚される付加重合性䞍飜和結合を少
なくずも個有する化合物ずしおは、広範な付加
重合性化合物があげられる。その䟋ずしおは、ア
クリル酞゚ステル類、アクリルアミド類、メタア
クリル酞゚ステル類、メタアクリルアミド類、ア
リル化合物、ビニル゚ヌテル類、ビニル゚ステル
類、−ビニル化合物、スチレン類、クロトン酞
゚ステル類などがある。付加重合性䞍飜和結合を
個有する化合物の具䜓䟋ずしおは、アクリル酞
゚ステル類、䟋えば、アクリル酞、アルキルアク
リレヌト䟋えばアクリル酞プロピル、アクリル
酞ブチル、アクリル酞アミル、アクリル酞゚チル
ヘキシル、アクリル酞オクチル、メタアクリル
酞゚ステル類、䟋えば、メタアクリル酞、アルキ
ルメタアクリレヌト䟋えばメチルメタアクリレ
ヌト、゚チルメタアクリレヌト、プロピルメタア
クリレヌト、む゜プロピルメタアクリレヌト、
アクリルアミド類、䟋えばアクリルアミド、−
アルキルアクリルアミド、該アルキル基ずしお
は、䟋えばメチル基、゚チル基、ブチル基、む゜
プロピル基、−ブチル基、゚チルヘキシル基な
どがある。、メタアクリルアミド類、䟋えばメタ
アクリルアミド、−アルキルメタアクリルアミ
ド該アルキル基ずしおは、メチル基、゚チル
基、む゜プロピル基、−ブチル基、゚チルヘキ
シル基などがある。、アリル化合物、䟋えばアリ
ル゚ステル類䟋えば酢酞アリル、カプロン酞ア
リル、カプリル酞アリル、ラりリン酞アリル、パ
ルミチン酞アリル、ビニル゚ヌテル類、䟋えば
アルキルビニル゚ヌテル䟋えばヘキシルビニル
゚ヌテル、オクチルビニル゚ヌテル、デシルビニ
ル゚ヌテル、゚チルヘキシルビニル゚ヌテル、
ビニル゚ステル類、䟋えばビニルブチレヌト、ビ
ニルむ゜ブチレヌト、ビニルトリメチルアセテヌ
ト、ビニルゞ゚チルアセテヌト、ビニルバレレヌ
ト、ビニルカプロ゚ヌト等がある。他にスチレン
類、䟋えばスチレン、メチルスチレン、クロルメ
チルスチレン、アルコキシスチレン、ハロゲン化
スチレン、安息銙酞スチレン等がある。 クロトン酞゚ステル類ずしおはクロトン酞メチ
ル、クロトン酞゚チル、クロトン酞ブチル、クロ
トン酞ヘキシル、クロトン酞む゜プロピルなどが
ある。 次に、付加重合性䞍飜和結合を個以䞊有する
化合物の具䜓䟋を䟋瀺するが、これらは䞊蚘付加
重合性䞍飜和結合を個有する化合物よりも、奜
適に䜿甚される。先ずアクリル酞゚ステル類及び
メタアクリル酞゚ステル類ずしおは、倚䟡アルコ
ヌルのポリアクリレヌト類及びポリメタアクリレ
ヌト類ここで「ポリ」ずはゞアクリレヌト以䞊
を指す。がある。䞊蚘倚䟡アルコヌルずしおは、
ポリ゚チレングリコヌル、ポリプロピレンオキシ
ド、ポリブチレンオキシド、β−ヒドロキシ゚
トキシベンれン、グリセリン、ゞグリセリン、
ネオベンチルグリコヌル、トリメチロヌルプロパ
ン、トリ゚チロヌルプロパン、ペンタ゚リトリト
ヌル、ゞペンタ゚リトリトヌル、゜ルビタン、゜
ルビトヌル、−ブタンゞオヌル、
−ブタントリオヌル、−ブテン−−ゞ
オヌル、−ブチル−−゚チル−プロパンゞオ
ヌル、−ブテン−−ゞオヌル、−
プロパンゞオヌル、トリ゚タノヌルアミン、デカ
リンゞオヌル、−クロル−−プロパンゞ
オヌル等がある。 さらにオリゎ゚ステルアクリレヌト、オリゎ゚
ステルメタクリレヌト、゚ポキシアクリレヌト、
りレタンアクリレヌトなどの名称で垂販されおい
るアクリレヌト、メタクリレヌト類なども奜適に
䜿甚できる。 かかる付加重合性䞍飜和結合を少なくずも個
有する化合物は皮以䞊を䜵甚しお甚いるこずも
できる。これらの化合物は皮膜圢成高分子物質
100重量郚に察しお10重量郚から500重量郚、奜た
しくは30から200重量郚の範囲で甚いられる。 本発明の画像圢成材料の光重合性組成物局は䞊
蚘したような皮膜圢成性高分子物質、付加重合性
䞍飜和化合物、特定の光重合開始剀および密着性
向䞊剀からなるものであるが、されに必芁に応じ
お熱重合防止剀、着色剀、充おん剀、可塑剀など
の各皮添加剀を含有させる事もできる。 本発明に䜿甚される光重合性組成物局を構成す
る各材料は、溶剀に溶解しお塗垃液ずなし支持䜓
䞊に塗垃し也燥される。 塗垃液の溶剀ずしおはアセトン、メチル゚チル
ケトン、メチルむ゜ブチルケトンなどのケトン
類、トル゚ン、ベンれン、キシレンなどの芳銙族
炭化氎玠、酢酞゚チル、酢酞ブチル、酢酞アミル
などの゚ステル類、四塩化炭玠、クロロホルム、
トリクロロ゚チレン、塩化メチレンなどのハロゲ
ン化炭化氎玠、ゞ゚チル゚ヌテン、テトラヒドロ
フラン、ゞオキサン、゚チレングリコヌルモノメ
チル゚ヌテルなどの゚ヌテル類、ゞメチルホルム
アミド、ゞメチルスルホキシドなどがある。 光重合性組成物局は支持䜓の䞊に塗垃液を塗り
也燥させた埌の厚みが〜100Ό奜たしくは10
〜60Όになるように蚭ける。本発明の画像圢成
材料は支持䜓䞊に光重合性組成物局を蚭けた構成
からなるものであるが、必芁に応じお光重合性組
成物局の䞊に保護フむルムを蚭けるこずもでき
る。保護フむルムずしおはポリ゚チレン、ポリプ
ロピレンあるいは非着凊理をほどこした各皮フむ
ルム、玙などが䜿甚できる。 本発明の画像圢成材料を甚いお画像圢成する方
法に぀いお説明するず、画像圢成材料が保護フむ
ルムを有しおいる堎合は保護フむルムをはがしお
から光重合性組成物局を所望の基板に圧着させ
る。 次に透明な支持䜓を通しお画像露光する。 光源ずしおは350〜500nの範囲の波長の光を
含む光源、䟋えば高圧氎銀灯、超高圧氎銀灯、キ
セノン灯、カヌボンアヌク灯などを䜿甚するこず
ができる。その他にレヌザヌ光線、電子線、線
などを光源ずしお䜿甚しおもよい。画像露光埌、
必芁ならば熱凊理を加えおもよいが50℃〜120
℃で分〜120分皋床、支持䜓を基板から剥離す
るず画像露光における露光郚分は硬化しお基板に
残り、未露光郚分は硬化しないたた支持䜓ず共に
陀去され、かくしお基板䞊に所望の画像が圢成さ
れる。 本発明の画像圢成材料は、光重合性組成物局が
厚目のいわゆるテンテむング甚レゞストずしお䜿
甚した堎合、その硬化郚分の基材に察する密着性
が良奜であるため剥れによる欠陥のない画像を䞎
え奜郜合に䜿甚されるが、もちろんテンテむング
を目的ずしない他のレゞスト画像の䜜補にも奜適
に䜿甚できる。 さらに平版印刷、凞版印刷等の刷版の䜜補や他
のレリヌフ画像の䜜補などの甚途にも䜿甚するこ
ずができる。 以䞋実斜䟋によ぀お具䜓的に説明するが、本発
明はこの実斜䟋により限定されるものではない。 実斜䟋  塩玠化ポリ゚チレン山陜囜策パルプ瀟補スヌパ
ヌクロンCPE907LTA 80重量郚 ポリメタクリル酞メチル䞉菱レヌペン瀟補ダむ
ダナヌルBR−80 20 ペンタ゚リスリトヌルアクリレヌト 40 オリゎ゚ステルアクリレヌト重亜合成化孊工業
瀟補アロニツクス−6100 100 ベンゟむンむ゜グチル゚ヌテル 7.0 −ナフタリンスルホニルクロラむド 1.0 パラメトキシプノヌル 0.1 ビクトリアピナアヌブルヌ 0.3 トル゚ン 400 䞊蚘材料を均䞀に溶解混合するこずにより光重
合性組成物の溶液を䜜補した。この液を厚さ25ÎŒ
のポリ゚チレンテレフタレヌトフむルム䞊に也
燥埌の厚みが40Όになるように塗垃し、80℃で
10分間也燥を行なうこずにより画像圢成材料を埗
た。 次にこの画像圢成材料を衚面を枅浄化したスル
ヌホヌルを有するプリント配線板甚の䞡面銅匵り
基板の䞡面に加圧積局した。この状態で配線回路
パタヌンを持぀た陰画原皿を銅面に積局された画
像圢成材料の支持䜓の䞊に密着させ、陰画原皿を
通しお3KWの超高圧氎銀灯により60cmの距離よ
り25秒間露光を行な぀た基板の䞡面共に露光。
次に35℃に基板を加枩し支持䜓のポリ゚チレンテ
レフタレヌトフむルムを基板より匕剥すず、感光
局の露光された郚分は硬化しお銅匵り基板䞊に残
り、未露光の郚分は支持䜓ず共に銅匵り基板より
陀去されお、銅匵り基板䞊には陰画原皿に察応し
た陜画原像が圢成された。このようにしお圢成さ
れたレゞストパタヌンは陰画原皿を忠実に再珟し
おおり125Όの现線たで解像、露光郚分が基
板より剥れお画像が断線したり欠損する欠点や、
或はテンテむング郚分が砎れるような欠点は党く
なか぀た。 同様の操䜜をさらに枚の基板に぀いお行な぀
たが、同様に党く欠点のないレゞストパタヌンが
埗られた。このようにしお埗られたレゞストパタ
ヌンを有する銅匵り基板を、塩化第銅氎溶液を
甚いお40℃の枩床で銅の局の゚ツチング凊理を行
な぀たが、この゚ツチング凊理䞭にも感光局は銅
に匷く接着し、剥れたりピンホヌルを発生するよ
うな珟象や或はテンテむング郚分が砎れるような
珟象は党く生じない事が確められた。又゚ツチン
グ埌の感光局の基板よりの剥離は、塩化メチレン
により容易に行なうこずができた。たたこの画像
圢成材料の感床を䞊蚘露光条件で富士写真フむル
ム瀟補PSステツプガむドにより調べるず段の
珟像ステツプ数が埗られた。 比范䟋  実斜䟋の光重合性組成物䞭の−ナフタリン
スルホニルクロラむドを陀いた以倖は、実斜䟋
ず同様にしお画像圢成材料を埗た。 実斜䟋ず同様の基板、陰画原皿を甚いお実斜
䟋ず同様の操䜜により10枚の基板䞊にレゞスト
パダンを圢成した。この10枚を調べるず枚に
枚皋床の割合で露光郚分が基板からはがれるこず
による断線䞍良が発生しおいるこずが確認され
た。しかしその埌の゚ツチング凊理によりさらに
レゞストパタヌンがはがれお䞍良箇所が増えるこ
ずはなか぀た。なおこの画像圢成材料は実斜䟋
ず同様に125Όの画像を解像し、感床はPSステ
ツプガむドで段であるこずが確められた。 実斜䟋  塩玠化ポリ゚チレン山陜囜策パルプ瀟補スヌパ
ヌクロンCPE907HA 70重量郚 ポリメタクリル酞メチル䞉菱レヌペン瀟補ダむ
ダナヌルBR−83 30 トリメチロヌルプロパントリアクリレヌト 40 オリゎ゚ステルアクリレヌト東亜合成化孊工業
瀟補アロニツクス−6300 100 ベンゞルゞメチルケタヌル 4.0 トリプロモメチルプニルスルホン 0.5 パラメトキンプノヌル 0.1 ビクトリアピナアヌブルヌ 0.3 トル゚ン 400 䞊蚘材料を均䞀に溶解混合するこずにより光重
合性組成物の溶液を䜜補し、この液を厚さ25Ό
のポリ゚チレンテレフタレヌトフむルム䞊に也燥
埌の厚みが40Όになるように塗垃し、80℃で10
分間也燥するこずにより画像圢成材料を埗た。 実斜䟋ず同様の基板10枚にこの材料を積局
し、同様の陰画原皿を甚いお露光時間を20秒ずす
る以倖は実斜䟋ず同様にしお露光を行な぀た。
次に、剥離珟像を行な぀たが埗られたレゞストパ
タヌンには党く剥れなどの欠点がみずめられなか
぀た。たた゚ツチング凊理を行な぀おも党く問題
が生じない事が確かめられた。この材料の解像性
は125Όであり、䞊蚘露光条件での感床はPSス
テツプガむドで段であ぀た。 実斜䟋  塩玠化ポリ゚チレン山陜囜策パルプ瀟補スヌパ
ヌクロンCPE907LTA 100重量郚 オリゎ゚ステルアクリレヌト東亜合成化孊工業
瀟補アロニツクス−8060 70 ゞ゚チレングリコヌルゞアクリレヌト 70 ベンゟむンむ゜プロピル゚ヌテル 7.5 パラトル゚ンスルホニルクロラむド 1.0 パラメトキシプノヌル 0.1 ゚テルバむオレツト 0.3 トル゚ン 400 䞊蚘材料を均䞀に溶解混合するこずにより光重
合性組成物の溶液を䜜補し、この液を厚さ25Ό
のポリ゚チレンテレフタレヌトフむルム䞊に也燥
埌の厚みが50Όになるように塗垃し、80℃で10
分間也燥するこずにより画像圢成材料を埗た。 この材料を甚い実斜䟋ず同様の基板、陰画原
皿、凊理条件により10枚の基板䞊にレゞストパタ
ヌンを䜜補した。このレゞストパタヌンにも党く
はがれなどの欠点がみずめられず、゚ツチング凊
理によ぀おも問題を生じなか぀た。 この材料の解像性は150Όであり䞊蚘露光条
件での感床はPSステツプガむドで段であ぀た。 比范䟋  実斜䟋のベンゞルゞメチルケタヌルの代りに
ベンゞル郚を䜿甚した以倖は実斜䟋ず同様に
しお画像圢成材料を䜜補した。 この材料を甚い実斜䟋ず同様の方法におレゞ
ストパタヌンを䜜補したが、10枚の基板䞭枚に
枚皋床の割合で露光郚分が剥れるこずによる䞍
良が発生しおいるこずが確められた。 なおこの材料の解像性は125Όであり、たた
感床はPSステツプガむドで段であ぀た。
[Formula] etc. Therefore, various compounds have been known as photopolymerization initiators generally used in image forming materials, but the compound of the above general formula (A) is different from the compound of the general formula (B). A major feature of the present invention is that the adhesion to the image forming substrate is improved by using it in combination with. According to the experiments conducted by the present inventors, even if Compound B is added to Compound A in a photopolymerizable composition for image formation, the phenomenon of accelerating the photopolymerization rate and improving the reaction rate is not observed. It has been confirmed that the adhesive strength of the exposed portion to the substrate is the same regardless of the presence or absence of Compound B, and that almost no photopolymerization reaction occurs with Compound B alone. Incidentally, although the reason for the improved adhesion of the exposed area to the base material in the present invention is not clear, most of the compound A acts as an original photopolymerization initiator, but a part of it acts to activate compound B. , hydrogen halide is generated from the halogen radicals emitted from compound B, and by activating the surface of the substrate (for example, a copper-clad laminate for printed wiring boards), the adhesion and adhesion of the exposed area are improved and peeling is facilitated. It is presumed that this will be prevented. However, there are restrictions on the amount of compound B added, which is 0.01 to 5% relative to the total amount of photopolymerizable composition (solid content).
It is necessary to add it within a range of % by weight. If the amount added is less than 0.01% by weight, a sufficient effect to improve adhesion cannot be obtained, while if it is more than 5% by weight, the effect of improving adhesion can be obtained, but the physical properties such as cohesive force of the photopolymerizable composition layer This is not desirable because it changes the image quality and reduces the accuracy of the image. The photopolymerization initiator represented by the compound A is
It is preferable to use it in a range of 0.1 to 20 parts by weight. To explain other materials constituting the image-forming material of the present invention, the transparent support has good transmittance to light in the wavelength range of 300 to 500 nm that can photopolymerize the photopolymerizable composition layer, and has a surface. Those that are uniform are selected. Specific examples of such supports include polyethylene terephthalate, polypropylene, polyethylene, cellulose triacetate, cellulose diacetate, polyvinyl chloride, polyvinyl alcohol, polycarbonate, polystyrene, cellophane, polyvinylidene chloride copolymer, polyamide ( For example 6-
Various types of plastic films can be used, such as nylon, 6,6-nylon, 6,10-nylon, etc.), polyimide, vinyl chloride-vinyl acetate copolymer, polytetrafluoroethylene, and polytrifluoroethylene. Furthermore, a composite material consisting of two or more of these types can also be used. The support generally has a thickness of 10 to 150 ÎŒm, preferably 20 to 50 ÎŒm, but supports having a thickness outside the above range can also be used. The film-forming polymeric substance that can be used in the present invention can be selected from a wide variety of polymeric substances, but those that have extremely poor compatibility with other constituents are not preferred. Examples of preferred film-forming polymeric substances include:
Chlorinated polyolefins (e.g. chlorinated polyethylene, chlorinated polypropylene), polymethyl methacrylate, polymethyl acrylate, polyvinyl chloride, polyvinylidene chloride, polyvinyl butyral, polyvinyl acetate, vinyl chloride.
Vinyl acetate copolymer, vinylidene chloride-acrylonitrile copolymer, polyisoprene, chlorinated rubber,
Examples include polychloroprene, polychlorosulfonated ethylene and polychlorosulfonated propylene, and solvent-soluble linear saturated polyesters. Two or more of these polymeric substances can be used in combination. The compound having at least one addition-polymerizable unsaturated bond used in the present invention includes a wide range of addition-polymerizable compounds. Examples include acrylic esters, acrylamides, methacrylic esters, methacrylamides, allyl compounds, vinyl ethers, vinyl esters, N-vinyl compounds, styrenes, crotonic esters, and the like. Specific examples of compounds having one addition-polymerizable unsaturated bond include acrylic esters, such as acrylic acid, alkyl acrylates (such as propyl acrylate, butyl acrylate, amyl acrylate, ethylhexyl acrylate, octyl acrylate). ), methacrylic esters, such as methacrylic acid, alkyl methacrylates (such as methyl methacrylate, ethyl methacrylate, propyl methacrylate, isopropyl methacrylate),
Acrylamides, such as acrylamide, N-
alkylacrylamide, (such alkyl groups include, for example, methyl, ethyl, butyl, isopropyl, t-butyl, ethylhexyl, etc.), methacrylamide, such as methacrylamide, N-alkylmethacrylamide ( Examples of the alkyl group include methyl group, ethyl group, isopropyl group, t-butyl group, and ethylhexyl group), allyl compounds such as allyl esters (such as allyl acetate, allyl caproate, allyl caprylate, and lauric acid) allyl, allyl palmitate), vinyl ethers such as alkyl vinyl ethers (e.g. hexyl vinyl ether, octyl vinyl ether, decyl vinyl ether, ethylhexyl vinyl ether),
Vinyl esters such as vinyl butyrate, vinyl isobutyrate, vinyl trimethyl acetate, vinyl diethyl acetate, vinyl valerate, vinyl caproate, and the like. Other styrenes include styrene, methylstyrene, chloromethylstyrene, alkoxystyrene, halogenated styrene, and styrene benzoate. Examples of crotonate esters include methyl crotonate, ethyl crotonate, butyl crotonate, hexyl crotonate, and isopropyl crotonate. Next, specific examples of compounds having two or more addition-polymerizable unsaturated bonds are illustrated, and these are more preferably used than the above-mentioned compounds having one addition-polymerizable unsaturated bond. First, acrylic esters and methacrylic esters include polyacrylates and polymethacrylates (herein, "poly" refers to diacrylate or higher) of polyhydric alcohols. The polyhydric alcohol mentioned above is
Polyethylene glycol, polypropylene oxide, polybutylene oxide, (β-hydroxyethoxy)benzene, glycerin, diglycerin,
Neobentyl glycol, trimethylolpropane, triethylolpropane, pentaerythritol, dipentaerythritol, sorbitan, sorbitol, 1,4-butanediol, 1,2,
4-butanetriol, 2-butene-1,4-diol, 2-butyl-2-ethyl-propanediol, 2-butene-1,4-diol, 1,3-
Examples include propanediol, triethanolamine, decalindiol, 3-chloro-1,2-propanediol, and the like. In addition, oligoester acrylate, oligoester methacrylate, epoxy acrylate,
Acrylates and methacrylates commercially available under names such as urethane acrylate can also be suitably used. Two or more kinds of such compounds having at least one addition-polymerizable unsaturated bond can also be used in combination. These compounds are film-forming polymeric substances.
It is used in an amount of 10 to 500 parts by weight, preferably 30 to 200 parts by weight per 100 parts by weight. The photopolymerizable composition layer of the image forming material of the present invention is composed of the film-forming polymeric substance, addition polymerizable unsaturated compound, specific photopolymerization initiator, and adhesion improver as described above. In addition, various additives such as thermal polymerization inhibitors, colorants, fillers, and plasticizers can be added as necessary. Each material constituting the photopolymerizable composition layer used in the present invention is dissolved in a solvent to form a coating solution, which is coated onto a support and dried. Solvents for the coating solution include ketones such as acetone, methyl ethyl ketone, and methyl isobutyl ketone, aromatic hydrocarbons such as toluene, benzene, and xylene, esters such as ethyl acetate, butyl acetate, and amyl acetate, carbon tetrachloride, chloroform,
Examples include halogenated hydrocarbons such as trichloroethylene and methylene chloride, ethers such as diethyl ether, tetrahydrofuran, dioxane, and ethylene glycol monomethyl ether, dimethylformamide, and dimethyl sulfoxide. The photopolymerizable composition layer has a thickness of 5 to 100 ÎŒm, preferably 10 ÎŒm after coating the coating solution on the support and drying it.
Provided so that the thickness is ~60 ÎŒm. The image forming material of the present invention has a structure in which a photopolymerizable composition layer is provided on a support, but a protective film can also be provided on the photopolymerizable composition layer if necessary. As the protective film, polyethylene, polypropylene, various films treated with non-adhesive treatment, paper, etc. can be used. To explain the method of forming an image using the image forming material of the present invention, if the image forming material has a protective film, the protective film is peeled off and then the photopolymerizable composition layer is pressure-bonded to a desired substrate. The image is then exposed through the transparent support. As the light source, a light source containing light with a wavelength in the range of 350 to 500 nm, such as a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, a xenon lamp, a carbon arc lamp, etc., can be used. In addition, laser beams, electron beams, X-rays, etc. may be used as the light source. After image exposure,
Heat treatment may be added if necessary (50℃~120℃)
℃ for about 1 minute to 120 minutes), when the support is peeled off from the substrate, the exposed portion in the image exposure is cured and remains on the substrate, and the unexposed portion is removed together with the support without being cured, thus forming the desired image on the substrate. is formed. When the image-forming material of the present invention is used as a so-called tenting resist with a thick photopolymerizable composition layer, the cured portion has good adhesion to the substrate, so that it provides an image free from defects due to peeling. Although it is conveniently used, it can of course also be suitably used for producing other resist images not intended for tenting. Furthermore, it can also be used for the production of printing plates such as planographic printing and letterpress printing, and the production of other relief images. The present invention will be specifically explained below using Examples, but the present invention is not limited to these Examples. Example 1 Chlorinated polyethylene (Super Chron CPE907LTA manufactured by Sanyo Kokusaku Pulp Co., Ltd.) 80 (parts by weight) Polymethyl methacrylate (Dyanal BR-80 manufactured by Mitsubishi Rayon Co., Ltd.) 20 Pentaerythritol acrylate 40 Oligoester acrylate (Juiasei Kagaku Kogyo Co., Ltd.) Aronix M-6100) 100 Benzoin isobutyl ether 7.0 2-naphthalene sulfonyl chloride 1.0 Paramethoxyphenol 0.1 Victoria Pure Blue 0.3 Toluene 400 A solution of the photopolymerizable composition was prepared by uniformly dissolving and mixing the above materials. . Spread this liquid to a thickness of 25ÎŒ
It was coated on a polyethylene terephthalate film of 400 mL to a thickness of 40 Όm after drying, and heated at 80°C.
An image forming material was obtained by drying for 10 minutes. Next, this image forming material was laminated under pressure on both sides of a double-sided copper-clad substrate for a printed wiring board having through holes whose surface had been cleaned. In this state, the negative original with the wiring circuit pattern was brought into close contact with the support of the image forming material laminated on the copper surface, and the negative original was exposed to light for 25 seconds from a distance of 60 cm using a 3KW ultra-high pressure mercury lamp. (Both sides of the board are exposed).
Next, when the substrate is heated to 35°C and the polyethylene terephthalate film support is peeled off from the substrate, the exposed portions of the photosensitive layer harden and remain on the copper-clad substrate, and the unexposed portions are coated with the support. It was removed from the copper-clad substrate, and a positive original image corresponding to the negative original was formed on the copper-clad substrate. The resist pattern formed in this way faithfully reproduces the negative original (resolution down to a fine line of 125 Όm), but there are some defects such as the exposed part peeling off from the substrate and the image being disconnected or missing.
Also, there were no defects such as tearing of the tenting part. Similar operations were performed on nine more substrates, and resist patterns with no defects were similarly obtained. The copper layer of the copper-clad substrate having the resist pattern thus obtained was etched at a temperature of 40°C using a cupric chloride aqueous solution, but the photosensitive layer remained intact during this etching process. It was confirmed that it adheres strongly to copper and that no phenomena such as peeling, generation of pinholes, or tearing of the tenting part occurred at all. Further, the photosensitive layer after etching could be easily peeled off from the substrate using methylene chloride. Further, when the sensitivity of this image forming material was examined using a PS step guide manufactured by Fuji Photo Film Co., Ltd. under the above exposure conditions, a number of development steps of 9 was obtained. Comparative Example 1 Example 1 except that 2-naphthalenesulfonyl chloride in the photopolymerizable composition of Example 1 was removed.
An image forming material was obtained in the same manner as described above. Resist pads were formed on 10 substrates by the same operations as in Example 1 using the same substrates and negative originals as in Example 1. If you look at these 10 cards, 1 in 2
It was confirmed that disconnection defects due to the exposed portion peeling off from the substrate occurred in approximately 100% of the substrates. However, the subsequent etching process did not cause the resist pattern to peel off further and the number of defective areas did not increase. Note that this image forming material is Example 1.
It was confirmed that a 125 ÎŒm image was resolved in the same way as in the previous example, and the sensitivity was 9 steps with the PS step guide. Example 2 Chlorinated polyethylene (Super Chron CPE907HA manufactured by Sanyo Kokusaku Pulp Co., Ltd.) 70 (parts by weight) Polymethyl methacrylate (Dyanal BR-83 manufactured by Mitsubishi Rayon Co., Ltd.) 30 Trimethylolpropane triacrylate 40 Oligoester acrylate (Toagosei Chemical Co., Ltd.) Aronix M-6300 manufactured by Kogyo Co., Ltd.) 100 Benzyl dimethyl ketal 4.0 Tripromomethylphenylsulfone 0.5 Paramethquine phenol 0.1 Victoria Pure Blue 0.3 Toluene 400 A solution of the photopolymerizable composition is prepared by uniformly dissolving and mixing the above materials. Then, apply this liquid to a thickness of 25 ÎŒm.
It was coated on a polyethylene terephthalate film so that the thickness after drying was 40 ÎŒm, and it was heated at 80℃ for 10 minutes.
An imaging material was obtained by drying for a minute. This material was laminated on 10 substrates similar to those in Example 1, and exposure was carried out in the same manner as in Example 1, except that the same negative original was used and the exposure time was 20 seconds.
Next, peeling development was performed, but no defects such as peeling were observed in the resulting resist pattern. It was also confirmed that no problem occurred even if the etching treatment was performed. The resolution of this material was 125 ÎŒm, and the sensitivity under the above exposure conditions was 8 steps with a PS step guide. Example 3 Chlorinated polyethylene (Superchron CPE907LTA manufactured by Sanyo Kokusaku Pulp Co., Ltd.) 100 (parts by weight) Oligoester acrylate (Aronix M-8060 manufactured by Toagosei Chemical Industry Co., Ltd.) 70 Diethylene glycol diacrylate 70 Benzoin isopropyl ether 7.5 Para-toluenesulfonyl chloride 1.0 Paramethoxyphenol 0.1 Ether violet 0.3 Toluene 400 A solution of the photopolymerizable composition was prepared by uniformly dissolving and mixing the above materials, and this liquid was spread to a thickness of 25 ÎŒm.
It was coated on a polyethylene terephthalate film so that the thickness after drying was 50 ÎŒm, and it was heated at 80℃ for 10 minutes.
An imaging material was obtained by drying for a minute. Using this material, resist patterns were produced on 10 substrates using the same substrates, negative originals, and processing conditions as in Example 1. No defects such as peeling were observed in this resist pattern, and no problems occurred even during the etching process. The resolution of this material was 150 ÎŒm, and the sensitivity under the above exposure conditions was 9 steps with a PS step guide. Comparative Example 2 An image forming material was prepared in the same manner as in Example 2 except that 8 parts of benzyl was used in place of the benzyl dimethyl ketal in Example 2. A resist pattern was prepared using this material in the same manner as in Example 2, but it was confirmed that defects due to peeling of exposed areas occurred in about 1 out of 3 out of 10 substrates. I was caught. The resolution of this material was 125 ÎŒm, and the sensitivity was 7 steps using a PS step guide.

Claims (1)

【特蚱請求の範囲】  透明支持䜓䞊に皮膜圢成性高分子物質ず付加
重合性䞍飜和結合を少なくずも個有する化合物
ず光重合開始剀を必須成分ずしお含有する光重合
性組成物局を蚭けおなる画像圢成材料においお、 光重合開始剀ずしお䞀般匏 䜆し、R1は或はOXではCH3或はC2H5、
R2はOCH3、OC2H5、OC3H7或はOC4H9 で衚わされる化合物を䜿甚し、 さらに密着性向䞊剀ずしお䞀般匏 䜆し、R3は眮換もしくは未眮換の芳銙族残基
或は異節環状化合物残基、R4はハロゲン或は
CHmYn“はハロゲン、では以
䞊” で衚わされる化合物が党光重合性組成物固圢
分の量に察しお0.01〜重量の範囲で添加さ
れおいるこずを特城ずする、剥離珟像可胜な画像
圢成材料。
[Claims] 1. A photopolymerizable composition layer containing a film-forming polymer substance, a compound having at least one addition-polymerizable unsaturated bond, and a photopolymerization initiator as essential components is provided on a transparent support. In the image forming materials consisting of (However, R 1 is H or OX, and X is CH 3 or C 2 H 5 ,
For R 2 , a compound represented by OCH 3 , OC 2 H 5 , OC 3 H 7 or OC 4 H 9 ) is used, and as an adhesion improver, a compound represented by the general formula (However, R 3 is a substituted or unsubstituted aromatic residue or heterocyclic compound residue, R 4 is a halogen or
CHmYn "Y is halogen, m + n = 3, n is 1 or more") is added in an amount of 0.01 to 5% by weight based on the total amount of the photopolymerizable composition (solid content). An image forming material that can be peeled off and developed.
JP13467180A 1980-09-27 1980-09-27 Image forming material Granted JPS5760327A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13467180A JPS5760327A (en) 1980-09-27 1980-09-27 Image forming material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13467180A JPS5760327A (en) 1980-09-27 1980-09-27 Image forming material

Publications (2)

Publication Number Publication Date
JPS5760327A JPS5760327A (en) 1982-04-12
JPS6410055B2 true JPS6410055B2 (en) 1989-02-21

Family

ID=15133835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13467180A Granted JPS5760327A (en) 1980-09-27 1980-09-27 Image forming material

Country Status (1)

Country Link
JP (1) JPS5760327A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5854334A (en) * 1981-09-26 1983-03-31 Nitto Electric Ind Co Ltd Image forming material
JP4308585B2 (en) * 2003-06-09 2009-08-05 ゚レクトロニックマテリアルズ株匏䌚瀟 Photosensitive resin composition adhesion improver and photosensitive resin composition containing the same
JP6325887B2 (en) * 2014-05-15 2018-05-16 旭化成株匏䌚瀟 LAMINATE FOR PATTERN FORMATION, METHOD FOR MANUFACTURING PATTERN WITH PATTERN, AND PATTERN WITH PATTERN

Also Published As

Publication number Publication date
JPS5760327A (en) 1982-04-12

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