JPS6410108A - Constitution of semiconductor image position detecting element and image position detecting method - Google Patents

Constitution of semiconductor image position detecting element and image position detecting method

Info

Publication number
JPS6410108A
JPS6410108A JP62165969A JP16596987A JPS6410108A JP S6410108 A JPS6410108 A JP S6410108A JP 62165969 A JP62165969 A JP 62165969A JP 16596987 A JP16596987 A JP 16596987A JP S6410108 A JPS6410108 A JP S6410108A
Authority
JP
Japan
Prior art keywords
light incidence
image position
output
position detecting
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62165969A
Other languages
Japanese (ja)
Other versions
JPH0474645B2 (en
Inventor
Masanori Idesawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RIKEN
Original Assignee
RIKEN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RIKEN filed Critical RIKEN
Priority to JP62165969A priority Critical patent/JPS6410108A/en
Priority to US07/320,305 priority patent/US4961096A/en
Priority to PCT/JP1988/000662 priority patent/WO1993014376A1/en
Publication of JPS6410108A publication Critical patent/JPS6410108A/en
Publication of JPH0474645B2 publication Critical patent/JPH0474645B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices

Landscapes

  • Length Measuring Devices By Optical Means (AREA)
  • Measurement Of Optical Distance (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To detect an image position with high accuracy by dividing the detection area of a semiconductor image position detecting element into plural sections, and selecting an output electrode provided at a border part and putting an optional section in operation as one element. CONSTITUTION:When light L is incident on between output electrodes T1 and T2, output electrodes TA and TB are selected, the light incidence position X is found from the output currents of them, and then the light incidence position X is obtained with position accuracy obtained by dividing the interval between the output electrodes TA and TB by the resolution of an A/D converter, thereby determining the section including the light incidence position. Further, an output electrode with minimum section width including the light incidence position is selected and the light incidence position XD in the selected section is found from the output current of the selected output electrode; and then the light incidence position XD in the selected section is determined with position accuracy obtained by dividing the selected section by the resolution of the A/D converter and XD is added to the position X1 of the output electrode T1 to determine the light incidence position on the whole.
JP62165969A 1987-07-02 1987-07-02 Constitution of semiconductor image position detecting element and image position detecting method Granted JPS6410108A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62165969A JPS6410108A (en) 1987-07-02 1987-07-02 Constitution of semiconductor image position detecting element and image position detecting method
US07/320,305 US4961096A (en) 1987-07-02 1988-07-01 Semiconductor image position sensitive device with primary and intermediate electrodes
PCT/JP1988/000662 WO1993014376A1 (en) 1987-07-02 1988-07-01 Structure of semiconductor element for detecting image position and method of detecting image position

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62165969A JPS6410108A (en) 1987-07-02 1987-07-02 Constitution of semiconductor image position detecting element and image position detecting method

Publications (2)

Publication Number Publication Date
JPS6410108A true JPS6410108A (en) 1989-01-13
JPH0474645B2 JPH0474645B2 (en) 1992-11-26

Family

ID=15822446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62165969A Granted JPS6410108A (en) 1987-07-02 1987-07-02 Constitution of semiconductor image position detecting element and image position detecting method

Country Status (2)

Country Link
JP (1) JPS6410108A (en)
WO (1) WO1993014376A1 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01100408A (en) * 1987-10-14 1989-04-18 Rikagaku Kenkyusho Method of controlling semiconductor position detector having plural sets of output electrodes
JPH0342503A (en) * 1989-07-10 1991-02-22 Hamamatsu Photonics Kk Light incidence position detector
JPH0555010U (en) * 1991-12-26 1993-07-23 三洋電機株式会社 Semiconductor optical position detector
JP2001208537A (en) * 2000-01-28 2001-08-03 Mitsubishi Electric Corp Position detection circuit
EP2312336A1 (en) 2004-07-30 2011-04-20 Panasonic Electric Works Co., Ltd Image processing device
JP2012524306A (en) * 2009-04-16 2012-10-11 イシキリ インターフェイス テクノロジーズ ゲーエムベーハー Display screen and control system for data processing system combined with this

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4413481C2 (en) * 1994-04-19 1999-12-16 Vishay Semiconductor Gmbh Optoelectronic component

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5714704A (en) * 1980-07-01 1982-01-26 Rikagaku Kenkyusho Signal processing system for semiconductor position detecting sensor
JPS58151507A (en) * 1982-03-05 1983-09-08 Anritsu Corp Photodiode for position detection
JPS5956778A (en) * 1982-09-27 1984-04-02 Toshiba Corp Position detector for semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01100408A (en) * 1987-10-14 1989-04-18 Rikagaku Kenkyusho Method of controlling semiconductor position detector having plural sets of output electrodes
JPH0342503A (en) * 1989-07-10 1991-02-22 Hamamatsu Photonics Kk Light incidence position detector
JPH0555010U (en) * 1991-12-26 1993-07-23 三洋電機株式会社 Semiconductor optical position detector
JP2001208537A (en) * 2000-01-28 2001-08-03 Mitsubishi Electric Corp Position detection circuit
EP2312336A1 (en) 2004-07-30 2011-04-20 Panasonic Electric Works Co., Ltd Image processing device
JP2012524306A (en) * 2009-04-16 2012-10-11 イシキリ インターフェイス テクノロジーズ ゲーエムベーハー Display screen and control system for data processing system combined with this

Also Published As

Publication number Publication date
JPH0474645B2 (en) 1992-11-26
WO1993014376A1 (en) 1993-07-22

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