JPS6410620A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6410620A JPS6410620A JP16631687A JP16631687A JPS6410620A JP S6410620 A JPS6410620 A JP S6410620A JP 16631687 A JP16631687 A JP 16631687A JP 16631687 A JP16631687 A JP 16631687A JP S6410620 A JPS6410620 A JP S6410620A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- amorphous silicon
- oxide film
- grown
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To realize a correct operation without causing a leakage when a bipolar transistor is formed while the growth of a grain from the surface of amorphous silicon is suppressed by arranging the amorphous silicon between oxide films. CONSTITUTION:A first oxide film 1b is formed on the surface of a silicon substrate 4. Then, amorphous silicon 3 is grown on the first oxide film 1b at a substrate temperature of, e.g., 550 deg.C by using an ordinary low-pressure CVD method. Then, a second oxide film 1a is formed. These three layers are etched in succession from an uppermost layer downward, and a hole is made. Immediately after this process, single crystal silicon 5 is epitaxially grown selectively on the surface of the silicon substrate. During this epitaxial growth process a grain is hard to produce on the surface of the amorphous silicon 3. As a result, a region of polycrystalline silicon is hardly formed at the single crystal silicon 5 to be grown on the surface of the silicon substrate 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62166316A JPH0666275B2 (en) | 1987-07-02 | 1987-07-02 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62166316A JPH0666275B2 (en) | 1987-07-02 | 1987-07-02 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6410620A true JPS6410620A (en) | 1989-01-13 |
| JPH0666275B2 JPH0666275B2 (en) | 1994-08-24 |
Family
ID=15829090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62166316A Expired - Fee Related JPH0666275B2 (en) | 1987-07-02 | 1987-07-02 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0666275B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8741333B2 (en) | 2004-06-07 | 2014-06-03 | Nuvo Research Inc. | Compositions and methods for treating dermatitis or psoriasis |
| US8741332B2 (en) | 2004-06-07 | 2014-06-03 | Nuvo Research Inc. | Compositions and methods for dermally treating neuropathic pain |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61220418A (en) * | 1985-03-27 | 1986-09-30 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1987
- 1987-07-02 JP JP62166316A patent/JPH0666275B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61220418A (en) * | 1985-03-27 | 1986-09-30 | Fujitsu Ltd | Manufacture of semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8741333B2 (en) | 2004-06-07 | 2014-06-03 | Nuvo Research Inc. | Compositions and methods for treating dermatitis or psoriasis |
| US8741332B2 (en) | 2004-06-07 | 2014-06-03 | Nuvo Research Inc. | Compositions and methods for dermally treating neuropathic pain |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0666275B2 (en) | 1994-08-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |