JPS6411362A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6411362A
JPS6411362A JP62167627A JP16762787A JPS6411362A JP S6411362 A JPS6411362 A JP S6411362A JP 62167627 A JP62167627 A JP 62167627A JP 16762787 A JP16762787 A JP 16762787A JP S6411362 A JPS6411362 A JP S6411362A
Authority
JP
Japan
Prior art keywords
film
semiinsulating
additional capacitance
polycrystalline silicon
capacitance part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62167627A
Other languages
Japanese (ja)
Inventor
Atsushi Hiraishi
Ryuichi Saito
Koichiro Yamada
Takahide Ikeda
Mitsuru Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62167627A priority Critical patent/JPS6411362A/en
Publication of JPS6411362A publication Critical patent/JPS6411362A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To reduce an area to be occupied by a memory cell and to realize the high integration density of the memory cell by a method wherein a dielectric film constituting an additional capacitance part and a high-value resistor are composed of an identical semiinsulating film so that the additional capacitance part and the high-value resistor can be installed in an identical place. CONSTITUTION:A semiinsulating film 8 such as, e.g., a semiinsulating polysilicon (SIPOS) film is formed on the surface of a polycrystalline silicon film 7; e.g., a polycrystalline silicon film 9 of a third layer is formed on the semiinsulating film 6. This polycrystalline silicon film 9 is set at a power supply level Vcc. An additional capacitance part C is constituted by a stacked capacitor by making use of these polycrystalline silicon films 7, 9 as electrodes and by making use of the semiinsulating film 8 as a dielectric film. In this case, the semiinsulating film 8 is used as a high value resistance part R. That is to say, the dielectric film constituting the additional capacitance part C and the high- value resistance part R are composed of the identical semiinsulating film 8. By this setup, the additional capacitance part C and the high-value resistance part R can be formed in an identical place.
JP62167627A 1987-07-03 1987-07-03 Semiconductor integrated circuit device Pending JPS6411362A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62167627A JPS6411362A (en) 1987-07-03 1987-07-03 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62167627A JPS6411362A (en) 1987-07-03 1987-07-03 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6411362A true JPS6411362A (en) 1989-01-13

Family

ID=15853293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62167627A Pending JPS6411362A (en) 1987-07-03 1987-07-03 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6411362A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0430391A (en) * 1990-05-28 1992-02-03 Toshiba Corp Static type semiconductor memory
KR19990025316A (en) * 1997-09-11 1999-04-06 윤종용 Capacitor Formation Method on Substrate
JP2009281347A (en) * 2008-05-26 2009-12-03 Denso Corp Fuel injection device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0430391A (en) * 1990-05-28 1992-02-03 Toshiba Corp Static type semiconductor memory
KR19990025316A (en) * 1997-09-11 1999-04-06 윤종용 Capacitor Formation Method on Substrate
JP2009281347A (en) * 2008-05-26 2009-12-03 Denso Corp Fuel injection device

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