JPS6480066A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6480066A
JPS6480066A JP62235908A JP23590887A JPS6480066A JP S6480066 A JPS6480066 A JP S6480066A JP 62235908 A JP62235908 A JP 62235908A JP 23590887 A JP23590887 A JP 23590887A JP S6480066 A JPS6480066 A JP S6480066A
Authority
JP
Japan
Prior art keywords
memory cell
misfet
integrated circuit
circuit device
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62235908A
Other languages
Japanese (ja)
Other versions
JP2659723B2 (en
Inventor
Hiroyuki Miyazawa
Shinji Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62235908A priority Critical patent/JP2659723B2/en
Publication of JPS6480066A publication Critical patent/JPS6480066A/en
Application granted granted Critical
Publication of JP2659723B2 publication Critical patent/JP2659723B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)

Abstract

PURPOSE:To reduce the occupation area of an annexed element as well as to enhance the degree of integration of the entire integrated circuit device by a method wherein, using the same electrode layer constituting the second semiconductor element, the other accessory element is formed on the first semiconductor device. CONSTITUTION:The memory cell M composed of a memory cell selecting MISFET Qs and an information storing capacitor Cs, and the complementary type MISFET Qn and Qp constituting the circumferential circuit of said memory cell M are provided on the same semiconductor substrate 1. A boosting capacitor CWB is provided on the upper part of the MISFET Qn and Qp. The boosting capacitor CWB is formed on the same layer as the first electrode layer 13 and the dielectric film 14 and the second electrode layer 15 of the stack structure capacitor Cs of the memory cell M. As the occupation area of the boosting capacitor can be reduced utilizing the occupation area of the MISFET Qn and Qp as above-mentioned, the degree of integration of the integrated circuit device having a DRAM can be improved.
JP62235908A 1987-09-19 1987-09-19 Semiconductor integrated circuit device Expired - Lifetime JP2659723B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62235908A JP2659723B2 (en) 1987-09-19 1987-09-19 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62235908A JP2659723B2 (en) 1987-09-19 1987-09-19 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS6480066A true JPS6480066A (en) 1989-03-24
JP2659723B2 JP2659723B2 (en) 1997-09-30

Family

ID=16993019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62235908A Expired - Lifetime JP2659723B2 (en) 1987-09-19 1987-09-19 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JP2659723B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4113733A1 (en) * 1990-04-27 1991-10-31 Mitsubishi Electric Corp Field-effect transistor for dynamic memory - uses asymmetric source, drain and isolation layers to minimise substrate defects and channel pinch-off effect
US5138412A (en) * 1988-09-30 1992-08-11 Kabushiki Kaisha Toshiba Dynamic ram, having an improved large capacitance
US5801412A (en) * 1995-09-04 1998-09-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a capacitance element with excellent area efficiency
US6222223B1 (en) 1996-06-21 2001-04-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including capacitance element having high area efficiency
EP1191595A3 (en) * 2000-09-15 2007-01-03 Infineon Technologies AG Integrated memory device with memory cells and buffer capacitors

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59130462A (en) * 1983-10-28 1984-07-27 Hitachi Ltd Complementary type metal oxide semiconductor memory
JPS59130464A (en) * 1983-12-26 1984-07-27 Toshiba Corp Semiconductor memory device
JPS6175555A (en) * 1984-07-02 1986-04-17 テキサス　インスツルメンツ　インコ−ポレイテツド Making of cmos twin well semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59130462A (en) * 1983-10-28 1984-07-27 Hitachi Ltd Complementary type metal oxide semiconductor memory
JPS59130464A (en) * 1983-12-26 1984-07-27 Toshiba Corp Semiconductor memory device
JPS6175555A (en) * 1984-07-02 1986-04-17 テキサス　インスツルメンツ　インコ−ポレイテツド Making of cmos twin well semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5138412A (en) * 1988-09-30 1992-08-11 Kabushiki Kaisha Toshiba Dynamic ram, having an improved large capacitance
DE4113733A1 (en) * 1990-04-27 1991-10-31 Mitsubishi Electric Corp Field-effect transistor for dynamic memory - uses asymmetric source, drain and isolation layers to minimise substrate defects and channel pinch-off effect
DE4143506C2 (en) * 1990-04-27 1997-01-23 Mitsubishi Electric Corp DRAM
US5801412A (en) * 1995-09-04 1998-09-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a capacitance element with excellent area efficiency
US6222223B1 (en) 1996-06-21 2001-04-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including capacitance element having high area efficiency
EP1191595A3 (en) * 2000-09-15 2007-01-03 Infineon Technologies AG Integrated memory device with memory cells and buffer capacitors

Also Published As

Publication number Publication date
JP2659723B2 (en) 1997-09-30

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