JPS6411754A - Manufacture for mirror surfaced wafer - Google Patents

Manufacture for mirror surfaced wafer

Info

Publication number
JPS6411754A
JPS6411754A JP16811087A JP16811087A JPS6411754A JP S6411754 A JPS6411754 A JP S6411754A JP 16811087 A JP16811087 A JP 16811087A JP 16811087 A JP16811087 A JP 16811087A JP S6411754 A JPS6411754 A JP S6411754A
Authority
JP
Japan
Prior art keywords
wafer
polishing
mirror
thickness unevenness
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16811087A
Other languages
Japanese (ja)
Other versions
JPH0661681B2 (en
Inventor
Yuichi Saito
Shinsuke Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Silicon Corp
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Japan Silicon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp, Japan Silicon Co Ltd filed Critical Mitsubishi Metal Corp
Priority to JP62168110A priority Critical patent/JPH0661681B2/en
Publication of JPS6411754A publication Critical patent/JPS6411754A/en
Publication of JPH0661681B2 publication Critical patent/JPH0661681B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)

Abstract

PURPOSE:To suppress the thickness unevenness of a polishing surface and its roughness to be decreased further to reduce a margin for polishing in an after process of mirror polishing or the like by accurately cutting at least one of the surfaces of a wafer before its final mirror polishing is performed. CONSTITUTION:A wafer, to which etching work is applied, is mounted to a fine cutting machine by using a vacuum chuck, and one of the surfaces of this wafer is fine cut by a diamond tool, forming the thickness unevenness to 1.0mu or less while the surface roughness to a degree of 0.002-1.0mu. Next performing mirror polishing with a margin about 0.1-1.0mu, the mirror surfaced wafer with its thickness unevenness about 1mu or less is obtained.
JP62168110A 1987-07-06 1987-07-06 Mirror surface wafer manufacturing method Expired - Lifetime JPH0661681B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62168110A JPH0661681B2 (en) 1987-07-06 1987-07-06 Mirror surface wafer manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62168110A JPH0661681B2 (en) 1987-07-06 1987-07-06 Mirror surface wafer manufacturing method

Publications (2)

Publication Number Publication Date
JPS6411754A true JPS6411754A (en) 1989-01-17
JPH0661681B2 JPH0661681B2 (en) 1994-08-17

Family

ID=15862037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62168110A Expired - Lifetime JPH0661681B2 (en) 1987-07-06 1987-07-06 Mirror surface wafer manufacturing method

Country Status (1)

Country Link
JP (1) JPH0661681B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230184A (en) * 1991-07-05 1993-07-27 Motorola, Inc. Distributed polishing head
US5705423A (en) * 1994-11-14 1998-01-06 Shin-Etsu Handotai Co., Ltd. Epitaxial wafer

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111136A (en) * 1979-02-21 1980-08-27 Toshiba Corp Processing method of semiconductor material
JPS57132965A (en) * 1981-02-03 1982-08-17 Shibayama Kikai Kk One pass type multi-head plane grinding, polishing, washing automatic machine
JPS57170538A (en) * 1981-04-13 1982-10-20 Sanyo Electric Co Ltd Polishing method for one side of semiconductor wafer
JPS61106207A (en) * 1984-10-31 1986-05-24 株式会社東京精密 Manufacture of wafer
JPS61166133A (en) * 1985-01-18 1986-07-26 Hitachi Ltd Wafer and manufacture thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111136A (en) * 1979-02-21 1980-08-27 Toshiba Corp Processing method of semiconductor material
JPS57132965A (en) * 1981-02-03 1982-08-17 Shibayama Kikai Kk One pass type multi-head plane grinding, polishing, washing automatic machine
JPS57170538A (en) * 1981-04-13 1982-10-20 Sanyo Electric Co Ltd Polishing method for one side of semiconductor wafer
JPS61106207A (en) * 1984-10-31 1986-05-24 株式会社東京精密 Manufacture of wafer
JPS61166133A (en) * 1985-01-18 1986-07-26 Hitachi Ltd Wafer and manufacture thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230184A (en) * 1991-07-05 1993-07-27 Motorola, Inc. Distributed polishing head
US5705423A (en) * 1994-11-14 1998-01-06 Shin-Etsu Handotai Co., Ltd. Epitaxial wafer

Also Published As

Publication number Publication date
JPH0661681B2 (en) 1994-08-17

Similar Documents

Publication Publication Date Title
ES2015322B3 (en) GRINDING PROCEDURE AND GRINDING MACHINE FOR A FLAT SURFACE.
JPS645704A (en) Tool particularly for boring for cutting peripheral face of work
TW374943B (en) Apparatus of grinding process and the method
ES2011495A6 (en) Method of automatically gauging articles of granite, hard stones and the like of disired thickness, with discontinuous motion
CA2088285A1 (en) Method and apparatus for finishing a cylinder bore
JPS6411754A (en) Manufacture for mirror surfaced wafer
US2399832A (en) Watchcase
JPS57178630A (en) Machining method of thin plate
KR850003861A (en) How to Work Fragile Workpieces
MY112675A (en) Method of producing semiconductor wafers
JPS61114813A (en) Cutting method
JPS55121643A (en) Fabricating method of semiconductor element
JPS51111993A (en) Apparatus for fabricating thin work as semiconductor or the like
ES2006188A6 (en) Method and apparatus for manufacturing multi-grooved pulleys, as well as a multi-grooved pulley manufactured according to this method
SU1225763A1 (en) Method of finishing components
JPS5681934A (en) Formation of semiconductor element
SU1255400A1 (en) Method of locking optical components
JPS6440208A (en) Machining method for preventing burr from occurring
JPS5832517A (en) Working method for die
JPS6434601A (en) Device for cutting and deforming cylindrical surface
SU878439A1 (en) Method of work surfaces of non-rigid parts
JPS6464763A (en) Device and method for grinding outer ring of bearing
JPS5640246A (en) Surface treatment of silicon wafer
JPH04122607A (en) Method of boring fragile body
JPS6416304A (en) Diamond tool and method for machining fine groove therewith

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term