JPS641232A - Method of measuring pattern overlay accuracy - Google Patents
Method of measuring pattern overlay accuracyInfo
- Publication number
- JPS641232A JPS641232A JP62157295A JP15729587A JPS641232A JP S641232 A JPS641232 A JP S641232A JP 62157295 A JP62157295 A JP 62157295A JP 15729587 A JP15729587 A JP 15729587A JP S641232 A JPS641232 A JP S641232A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mark
- alignment
- overlay accuracy
- measuring pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
PURPOSE: To prevent an error by forming a first alignment mark in first step, then covering the top with a film which transmits an irradiated beam used at the time of alignment, and flattening the top of the film.
CONSTITUTION: An alignment mark 2a formed in a recess shape in first step on a semiconductor substrate 1 is covered with a thin film 6 of a material which transmits an alignment light, and the film is so selected that the upper face becomes flat in response to a mark step. Then, an alignment mark 5 is formed on a resist film 5 formed in second step. The marks 2a, 5 are scanned by a laser light, scattered light from the step of the mark is detected to accurately measure the overlay deviation.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62157295A JPS641232A (en) | 1987-06-23 | 1987-06-23 | Method of measuring pattern overlay accuracy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62157295A JPS641232A (en) | 1987-06-23 | 1987-06-23 | Method of measuring pattern overlay accuracy |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH011232A JPH011232A (en) | 1989-01-05 |
| JPS641232A true JPS641232A (en) | 1989-01-05 |
Family
ID=15646539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62157295A Pending JPS641232A (en) | 1987-06-23 | 1987-06-23 | Method of measuring pattern overlay accuracy |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS641232A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5622796A (en) * | 1991-12-18 | 1997-04-22 | Sgs-Thomson Microelectronics S.R.L. | Process for producing metrological structures particularly for direct measurement of errors introduced by alignment systems |
-
1987
- 1987-06-23 JP JP62157295A patent/JPS641232A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5622796A (en) * | 1991-12-18 | 1997-04-22 | Sgs-Thomson Microelectronics S.R.L. | Process for producing metrological structures particularly for direct measurement of errors introduced by alignment systems |
| US5985494A (en) * | 1991-12-18 | 1999-11-16 | Sgs-Thomson Microelectronics S.R.L. | Metrological structures particularly for direct measurement of errors introduced by alignment systems |
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