JPS641282A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS641282A JPS641282A JP15706087A JP15706087A JPS641282A JP S641282 A JPS641282 A JP S641282A JP 15706087 A JP15706087 A JP 15706087A JP 15706087 A JP15706087 A JP 15706087A JP S641282 A JPS641282 A JP S641282A
- Authority
- JP
- Japan
- Prior art keywords
- forming
- gate
- gate recess
- etching
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To realize high performance through reduction of FET parasitic resistance and parasitic capacitance by forming the right and left asymmetrical gate recess.
CONSTITUTION: After forming an ohmic electrode 2 which will become a source drain electrode on a GaAs substrate 1, a resist pattern 3 to form a gate electrode is formed. Thereafter, the etching of gate recess is carried out, for example, by reactive ion etching or ion milling. In this case, irradiation of ion beam 4 with the predetermined gradient of irradiation angle realizes formation of gate recess 5 having a gradient in accordance with the inclination of ion beam 4 on the GaAs substrate 1. Namely, this etching method is the anisotropic etching method and therefore the gate recess 5 is formed asymmetrically to the right and left. Next, after forming the Schottky metal 6a for gate electrode to the entire part of wafer by the evaporation method, the gate electrode 6 is formed by the lift-off method. Such shape realizes low parasitic capacitance, low parasitic resistance, high breakdown strength, and high mutual conductance and thereby a high performance FET can also be realized.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15706087A JPS641282A (en) | 1987-06-23 | 1987-06-23 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15706087A JPS641282A (en) | 1987-06-23 | 1987-06-23 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH011282A JPH011282A (en) | 1989-01-05 |
| JPS641282A true JPS641282A (en) | 1989-01-05 |
Family
ID=15641334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15706087A Pending JPS641282A (en) | 1987-06-23 | 1987-06-23 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS641282A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2685418C (en) * | 2007-04-27 | 2015-06-16 | Georgia-Pacific Consumer Products Lp | Sheet product dispenser |
-
1987
- 1987-06-23 JP JP15706087A patent/JPS641282A/en active Pending
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