JPS6414924A - Semiconductor treating agent - Google Patents
Semiconductor treating agentInfo
- Publication number
- JPS6414924A JPS6414924A JP16965387A JP16965387A JPS6414924A JP S6414924 A JPS6414924 A JP S6414924A JP 16965387 A JP16965387 A JP 16965387A JP 16965387 A JP16965387 A JP 16965387A JP S6414924 A JPS6414924 A JP S6414924A
- Authority
- JP
- Japan
- Prior art keywords
- active agent
- surface active
- concentration range
- nonionic surface
- total solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 abstract 4
- 239000004094 surface-active agent Substances 0.000 abstract 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 abstract 2
- 239000000908 ammonium hydroxide Substances 0.000 abstract 2
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 abstract 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 abstract 1
- 150000005215 alkyl ethers Chemical class 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- -1 polyoxyethylene Polymers 0.000 abstract 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
PURPOSE:To enhance detergency and to make etching action very low, by including specified quarternary ammonium hydroxide, nonionic surface active agent and hydrazine at a specified ratio. CONSTITUTION:Qurternary ammonium hydroxide is a compound, which is expressed by a general formula I. As an example, trimethyl-2- hydroxyethylammonium hydroxide or the like is shown, and it is used within a concentration range of 0.01-30wt.% in a total solution. As nonionic surface active agent, polyoxyethylene alkyl ether type nonionic surface active agent, which is expressed by a general formula R-O(CH2CH2O)nH(where R is C8-C18; and (n) is 8-15), or the like is suitably used. It is used within a concentration range of 0.001-5 wt.% is the total solution. The hydrazine is used within a concentration range of 0.01-30 wt.% in the total solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62169653A JP2569574B2 (en) | 1987-07-09 | 1987-07-09 | Semiconductor processing agent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62169653A JP2569574B2 (en) | 1987-07-09 | 1987-07-09 | Semiconductor processing agent |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6414924A true JPS6414924A (en) | 1989-01-19 |
| JP2569574B2 JP2569574B2 (en) | 1997-01-08 |
Family
ID=15890455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62169653A Expired - Fee Related JP2569574B2 (en) | 1987-07-09 | 1987-07-09 | Semiconductor processing agent |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2569574B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03278431A (en) * | 1989-05-09 | 1991-12-10 | Fujitsu Ltd | Manufacture of semiconductor device |
| US5175078A (en) * | 1988-10-20 | 1992-12-29 | Mitsubishi Gas Chemical Company, Inc. | Positive type photoresist developer |
| US5466389A (en) * | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
| US5498293A (en) * | 1994-06-23 | 1996-03-12 | Mallinckrodt Baker, Inc. | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
| WO2003065433A1 (en) * | 2002-01-28 | 2003-08-07 | Mitsubishi Chemical Corporation | Liquid detergent for semiconductor device substrate and method of cleaning |
-
1987
- 1987-07-09 JP JP62169653A patent/JP2569574B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5175078A (en) * | 1988-10-20 | 1992-12-29 | Mitsubishi Gas Chemical Company, Inc. | Positive type photoresist developer |
| JPH03278431A (en) * | 1989-05-09 | 1991-12-10 | Fujitsu Ltd | Manufacture of semiconductor device |
| US5466389A (en) * | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
| US5498293A (en) * | 1994-06-23 | 1996-03-12 | Mallinckrodt Baker, Inc. | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
| WO2003065433A1 (en) * | 2002-01-28 | 2003-08-07 | Mitsubishi Chemical Corporation | Liquid detergent for semiconductor device substrate and method of cleaning |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2569574B2 (en) | 1997-01-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |