JPS6414927A - Forming method of silicon nitride film or silicon oxynitride film - Google Patents
Forming method of silicon nitride film or silicon oxynitride filmInfo
- Publication number
- JPS6414927A JPS6414927A JP16981687A JP16981687A JPS6414927A JP S6414927 A JPS6414927 A JP S6414927A JP 16981687 A JP16981687 A JP 16981687A JP 16981687 A JP16981687 A JP 16981687A JP S6414927 A JPS6414927 A JP S6414927A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- silicon nitride
- film
- base material
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To form a silicon nitride film and an oxynitride film, which are characterized by uniform compositions and excellent performances, with good reproducibility, by bringing a gas including a compound, which has silicon-nitrogen bonding, into contact with the surface of a substrate under a high energy state. CONSTITUTION:As a compound having silicon-nitrogen bonding, aminosilane compound is used. As an examples, monoaminosilanes such as diethylamino-trimethylsilane and the like can be listed. The aminosilane compound, which is to become the raw material of a silicon nitride film, is brought into contact with a base material in a gaseous state. As a carrier gas, argon, nitrogen, hydrogen or the like is used. When a small amount of oxygen or air is made to coexist, a silicon oxinitride film is obtained. A base material for forming the silicon nitride or the oxynitride is not especially restricted. A desirable method to set the base material in a high energy state is a method to project radiation, especially ultraviolet rays, on the base material. The temperature of the base materiel when the ultraviolet rays are projected is about 300-500 deg.C, and the temperature of about 600-900 deg.C can be used when the ultraviolet rays are not projected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16981687A JPS6414927A (en) | 1987-07-09 | 1987-07-09 | Forming method of silicon nitride film or silicon oxynitride film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16981687A JPS6414927A (en) | 1987-07-09 | 1987-07-09 | Forming method of silicon nitride film or silicon oxynitride film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6414927A true JPS6414927A (en) | 1989-01-19 |
Family
ID=15893433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16981687A Pending JPS6414927A (en) | 1987-07-09 | 1987-07-09 | Forming method of silicon nitride film or silicon oxynitride film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6414927A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0459971A (en) * | 1990-06-28 | 1992-02-26 | Toshiba Corp | Formation of silicon nitride film |
| JP2004186210A (en) * | 2002-11-29 | 2004-07-02 | Applied Materials Inc | Method for forming nitrogen-containing silicon compound film |
| JP2007318142A (en) * | 2006-05-23 | 2007-12-06 | Air Products & Chemicals Inc | Method for producing silicon oxide films from organoaminosilane precursors |
| WO2020213454A1 (en) * | 2019-04-16 | 2020-10-22 | 東京エレクトロン株式会社 | Film formation method and film formation device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6196741A (en) * | 1984-10-17 | 1986-05-15 | Nec Corp | Lead frame housing container |
| JPS61234534A (en) * | 1985-04-11 | 1986-10-18 | Semiconductor Energy Lab Co Ltd | Fabrication of silicon nitride coating |
-
1987
- 1987-07-09 JP JP16981687A patent/JPS6414927A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6196741A (en) * | 1984-10-17 | 1986-05-15 | Nec Corp | Lead frame housing container |
| JPS61234534A (en) * | 1985-04-11 | 1986-10-18 | Semiconductor Energy Lab Co Ltd | Fabrication of silicon nitride coating |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0459971A (en) * | 1990-06-28 | 1992-02-26 | Toshiba Corp | Formation of silicon nitride film |
| JP2004186210A (en) * | 2002-11-29 | 2004-07-02 | Applied Materials Inc | Method for forming nitrogen-containing silicon compound film |
| JP2007318142A (en) * | 2006-05-23 | 2007-12-06 | Air Products & Chemicals Inc | Method for producing silicon oxide films from organoaminosilane precursors |
| WO2020213454A1 (en) * | 2019-04-16 | 2020-10-22 | 東京エレクトロン株式会社 | Film formation method and film formation device |
| JP2020177980A (en) * | 2019-04-16 | 2020-10-29 | 東京エレクトロン株式会社 | Film formation method and film deposition equipment |
| US20220178031A1 (en) * | 2019-04-16 | 2022-06-09 | Tokyo Electron Limited | Film formation method and film formation device |
| KR20240141856A (en) * | 2019-04-16 | 2024-09-27 | 도쿄엘렉트론가부시키가이샤 | Film formation method and film formation device |
| US12168825B2 (en) | 2019-04-16 | 2024-12-17 | Tokyo Electron Limited | Film formation method and film formation device |
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