JPS6414967A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6414967A
JPS6414967A JP62171491A JP17149187A JPS6414967A JP S6414967 A JPS6414967 A JP S6414967A JP 62171491 A JP62171491 A JP 62171491A JP 17149187 A JP17149187 A JP 17149187A JP S6414967 A JPS6414967 A JP S6414967A
Authority
JP
Japan
Prior art keywords
film
irregularity
mask
interlayer insulating
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62171491A
Other languages
Japanese (ja)
Inventor
Toshio Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62171491A priority Critical patent/JPS6414967A/en
Publication of JPS6414967A publication Critical patent/JPS6414967A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To make it possible to simultaneously form a Schottky barrier diode, having excellent characteristics of rectification, with a low degree of irregularity in characteristics, together with a MOS transistor. CONSTITUTION:An interlayer insulating film 14 is formed on a substrate, and after a contact hole 15 has been formed, a polysilicon film 16 of 300-500Angstrom in thickness is formed on the whole surface of the substrate. Then, the film 16 alone on the region of the N-well 2', on which a Schottky barrier diode will be formed, is removed by conducting selective etching using a mask 24. Then, a refixed interlayer insulating film 14 is selectively removed using a mask 25, and an aperture part 26 is formed on a guard ring 22. Accordingly, as no film 16 is left on the interface of an aluminum Schottky electrode 21 and the N-well 2', the material is relatively alloyed uniform, the reverse- directioned leak current generated by a local breakdown due to field concentration can be reduced, and the abovementioned irregularity can also be reduced to a small value.
JP62171491A 1987-07-08 1987-07-08 Manufacture of semiconductor device Pending JPS6414967A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62171491A JPS6414967A (en) 1987-07-08 1987-07-08 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62171491A JPS6414967A (en) 1987-07-08 1987-07-08 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6414967A true JPS6414967A (en) 1989-01-19

Family

ID=15924079

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62171491A Pending JPS6414967A (en) 1987-07-08 1987-07-08 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6414967A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8018021B2 (en) 2006-07-05 2011-09-13 Samsung Electronics Co., Ltd. Schottky diode and method of fabricating the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534447A (en) * 1978-08-31 1980-03-11 Fujitsu Ltd Preparation of semicinductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534447A (en) * 1978-08-31 1980-03-11 Fujitsu Ltd Preparation of semicinductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8018021B2 (en) 2006-07-05 2011-09-13 Samsung Electronics Co., Ltd. Schottky diode and method of fabricating the same

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