JPS6415977A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS6415977A
JPS6415977A JP62172211A JP17221187A JPS6415977A JP S6415977 A JPS6415977 A JP S6415977A JP 62172211 A JP62172211 A JP 62172211A JP 17221187 A JP17221187 A JP 17221187A JP S6415977 A JPS6415977 A JP S6415977A
Authority
JP
Japan
Prior art keywords
film
polycrystal silicon
hole part
silicon film
eliminated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62172211A
Other languages
Japanese (ja)
Inventor
Atsuo Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62172211A priority Critical patent/JPS6415977A/en
Publication of JPS6415977A publication Critical patent/JPS6415977A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To enable the fine constitution, and decrease a collector resistance, by surrounding a collector contact region with an insulating film, and filling the inside with a conductive polycrystal silicon film, and a high melting metal film or the lamination of them. CONSTITUTION:After a U-trench element isolation region 4 is formed, a mask composed of a phosphosilicate glass (PSG) film 11 is formed. A collector contact forming region is vertically subjected to anisotropic etching by RIE method, and a hole part 12 is formed. The PSG film 11 is eliminated, and an SiO2 film 21 is formed in the hole part 12 by thermal oxidizing. The SiO2 film 21 at the bottom surface of the hole part 12 is eliminated by the anisotropic etching applying RIE. A polycrystal silicon film 22 is selectively grown to bury the hole part 12. The film is grown only on an exposed surface. Either by implanting phosphorus ion into the polycrystal silicon film, or by growing selectively the polycrystal silicon film 22 doped with phosphorus, the polycrystal silicon film 22 is added with conductivity.
JP62172211A 1987-07-09 1987-07-09 Semiconductor device and manufacture thereof Pending JPS6415977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62172211A JPS6415977A (en) 1987-07-09 1987-07-09 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62172211A JPS6415977A (en) 1987-07-09 1987-07-09 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6415977A true JPS6415977A (en) 1989-01-19

Family

ID=15937651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62172211A Pending JPS6415977A (en) 1987-07-09 1987-07-09 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6415977A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5501992A (en) * 1992-06-11 1996-03-26 Fujitsu Limited Method of manufacturing bipolar transistor having ring-shaped emitter and base
JP2002222938A (en) * 2001-01-25 2002-08-09 Rohm Co Ltd Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5501992A (en) * 1992-06-11 1996-03-26 Fujitsu Limited Method of manufacturing bipolar transistor having ring-shaped emitter and base
US5712505A (en) * 1992-06-11 1998-01-27 Fujitsu Limited Bipolar transistor having ring shape base and emitter regions
JP2002222938A (en) * 2001-01-25 2002-08-09 Rohm Co Ltd Semiconductor device

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