JPS6417023A - Active device - Google Patents

Active device

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Publication number
JPS6417023A
JPS6417023A JP62173157A JP17315787A JPS6417023A JP S6417023 A JPS6417023 A JP S6417023A JP 62173157 A JP62173157 A JP 62173157A JP 17315787 A JP17315787 A JP 17315787A JP S6417023 A JPS6417023 A JP S6417023A
Authority
JP
Japan
Prior art keywords
electrode
liquid crystal
substrate
ito
ferroelectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62173157A
Other languages
Japanese (ja)
Inventor
Takashi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP62173157A priority Critical patent/JPS6417023A/en
Publication of JPS6417023A publication Critical patent/JPS6417023A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

PURPOSE:To obtain a sharp image having a high contrast by forming an electrode and ferroelectric layer on an insulating substrate. CONSTITUTION:The electrode 13 consisting of ITO is provided on the insulating substrate 12 consisting of a glass substrate and the ferroelectric layer 14 consisting of non-single crystalline TiBaO3 is provided on the electrode 13. The liquid crystal panel using this active device, i.e., the liquid crystal panel formed by holding the liquid crystal F between the lower substrate D consisting of the electrode 13 consisting of ITO formed on the insulating substrate 12 made of the glass plate and the ferroelectric layer 14 consisting of the non-single crystalline TiBaO3 and the upper substrate E formed of the electrode 16 made of ITO on the glass substrate 15 has no annihilation of the image information by the leak current of the liquid crystal itself and forms the sharp image having the high contrast.
JP62173157A 1987-07-10 1987-07-10 Active device Pending JPS6417023A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62173157A JPS6417023A (en) 1987-07-10 1987-07-10 Active device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62173157A JPS6417023A (en) 1987-07-10 1987-07-10 Active device

Publications (1)

Publication Number Publication Date
JPS6417023A true JPS6417023A (en) 1989-01-20

Family

ID=15955158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62173157A Pending JPS6417023A (en) 1987-07-10 1987-07-10 Active device

Country Status (1)

Country Link
JP (1) JPS6417023A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5286664A (en) * 1991-10-01 1994-02-15 Nec Corporation Method for fabricating the LDD-MOSFET

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5286664A (en) * 1991-10-01 1994-02-15 Nec Corporation Method for fabricating the LDD-MOSFET

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