JPS6417426A - Formation of resist pattern - Google Patents

Formation of resist pattern

Info

Publication number
JPS6417426A
JPS6417426A JP62173278A JP17327887A JPS6417426A JP S6417426 A JPS6417426 A JP S6417426A JP 62173278 A JP62173278 A JP 62173278A JP 17327887 A JP17327887 A JP 17327887A JP S6417426 A JPS6417426 A JP S6417426A
Authority
JP
Japan
Prior art keywords
substrate
light
development
exposure
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62173278A
Other languages
Japanese (ja)
Inventor
Nobuhiro Narahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic System Solutions Japan Co Ltd
Original Assignee
Matsushita Graphic Communication Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Graphic Communication Systems Inc filed Critical Matsushita Graphic Communication Systems Inc
Priority to JP62173278A priority Critical patent/JPS6417426A/en
Publication of JPS6417426A publication Critical patent/JPS6417426A/en
Pending legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To improve lift-off performance and to facilitate other processes, by using a conventional method once to perform exposure/development of a sample substrate and next by using the same photomask to perform exposure/ development of the sample substrate again. CONSTITUTION:A light-interrupting part 13 is formed on a rear side of a photo mask 12 disposed a prescribed length above a sample substrate 10. When ultraviolet light 14 is radiated from above, a diffraction phenomenon occurs at an edge part of the light-interrupting part 13 so as to emit diffracted light 15. A resist layer on the substrate 10 is exposed by this diffracted light 15 and the ultraviolet light 14. Subsequently an unexposed part 11a remains by developing the substrate 10. When the substrate 10 is exposed similarly by the abovementioned exposure process, a tapered part 16 produced by a first exposure/ development process is exposed directly by the diffracted light 15. When the substrate is developed afterwards, the tapered part 16 is removed and a resist layer 11b remains with its edge formed perpendicularly.
JP62173278A 1987-07-10 1987-07-10 Formation of resist pattern Pending JPS6417426A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62173278A JPS6417426A (en) 1987-07-10 1987-07-10 Formation of resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62173278A JPS6417426A (en) 1987-07-10 1987-07-10 Formation of resist pattern

Publications (1)

Publication Number Publication Date
JPS6417426A true JPS6417426A (en) 1989-01-20

Family

ID=15957485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62173278A Pending JPS6417426A (en) 1987-07-10 1987-07-10 Formation of resist pattern

Country Status (1)

Country Link
JP (1) JPS6417426A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008026474A (en) * 2006-07-19 2008-02-07 Ono Sokki Co Ltd Exposure equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008026474A (en) * 2006-07-19 2008-02-07 Ono Sokki Co Ltd Exposure equipment

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