JPS641775B2 - - Google Patents
Info
- Publication number
- JPS641775B2 JPS641775B2 JP56169712A JP16971281A JPS641775B2 JP S641775 B2 JPS641775 B2 JP S641775B2 JP 56169712 A JP56169712 A JP 56169712A JP 16971281 A JP16971281 A JP 16971281A JP S641775 B2 JPS641775 B2 JP S641775B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thickness
- transparent
- electrode
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 238000004040 coloring Methods 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 239000012298 atmosphere Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 55
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 32
- 239000010409 thin film Substances 0.000 description 21
- 239000010408 film Substances 0.000 description 15
- 229910052741 iridium Inorganic materials 0.000 description 15
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- 238000001771 vacuum deposition Methods 0.000 description 13
- 239000007864 aqueous solution Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 229910003437 indium oxide Inorganic materials 0.000 description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- -1 hydroxy ions Chemical class 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- 239000000057 synthetic resin Substances 0.000 description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000499 gel Substances 0.000 description 2
- 150000004679 hydroxides Chemical class 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229920000536 2-Acrylamido-2-methylpropane sulfonic acid Polymers 0.000 description 1
- XHZPRMZZQOIPDS-UHFFFAOYSA-N 2-Methyl-2-[(1-oxo-2-propenyl)amino]-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(C)(C)NC(=O)C=C XHZPRMZZQOIPDS-UHFFFAOYSA-N 0.000 description 1
- FEWFXBUNENSNBQ-UHFFFAOYSA-N 2-hydroxyacrylic acid Chemical compound OC(=C)C(O)=O FEWFXBUNENSNBQ-UHFFFAOYSA-N 0.000 description 1
- 229920001817 Agar Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 229910004675 Na1+xZr2SixP3-xO12 Inorganic materials 0.000 description 1
- 229910004678 Na1+xZr2SixP3−xO12 Inorganic materials 0.000 description 1
- 229910003249 Na3Zr2Si2PO12 Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000008272 agar Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- BRXCDHOLJPJLLT-UHFFFAOYSA-N butane-2-sulfonic acid Chemical compound CCC(C)S(O)(=O)=O BRXCDHOLJPJLLT-UHFFFAOYSA-N 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011245 gel electrolyte Substances 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 239000003349 gelling agent Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- IUJMNDNTFMJNEL-UHFFFAOYSA-K iridium(3+);trihydroxide Chemical compound [OH-].[OH-].[OH-].[Ir+3] IUJMNDNTFMJNEL-UHFFFAOYSA-K 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000011244 liquid electrolyte Substances 0.000 description 1
- INHCSSUBVCNVSK-UHFFFAOYSA-L lithium sulfate Inorganic materials [Li+].[Li+].[O-]S([O-])(=O)=O INHCSSUBVCNVSK-UHFFFAOYSA-L 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- BFDHFSHZJLFAMC-UHFFFAOYSA-L nickel(ii) hydroxide Chemical compound [OH-].[OH-].[Ni+2] BFDHFSHZJLFAMC-UHFFFAOYSA-L 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007785 strong electrolyte Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- RBTVSNLYYIMMKS-UHFFFAOYSA-N tert-butyl 3-aminoazetidine-1-carboxylate;hydrochloride Chemical compound Cl.CC(C)(C)OC(=O)N1CC(N)C1 RBTVSNLYYIMMKS-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- 229910000166 zirconium phosphate Inorganic materials 0.000 description 1
- LEHFSLREWWMLPU-UHFFFAOYSA-B zirconium(4+);tetraphosphate Chemical compound [Zr+4].[Zr+4].[Zr+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LEHFSLREWWMLPU-UHFFFAOYSA-B 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/153—Constructional details
- G02F1/1533—Constructional details structural features not otherwise provided for
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【発明の詳細な説明】
本発明はエレクトロクロミツク表示素子の新規
な製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a novel method for manufacturing electrochromic display elements.
電圧印加により、可逆的に酸化還元反応が起
き、その物質が可逆的に発消色する現象を、エレ
クトロクロミズムと言う。このような現象を示す
材料即ちエレクトロクロミツク材料を用いて、電
圧加除操作により発色・消色を繰り返す表示素子
を作り、この表示素子により時計の数字や電子計
算機の数字を表示しようとの試みは、15年以上前
から行なわれている。例えば、ガラス基板の上に
透明電極膜(陰極)、三酸化タングステン薄膜、
二酸化ケイ素のような絶縁膜、電極膜(陽極)を
順次積層してなるエレクトロクロミツク表示素子
が既に知られている。この表示素子に電圧を印加
すると三酸化タングステン(WO3)薄膜が青色
に着色する。その後、この表示素子に逆の電圧を
印加すると、WO3薄膜の青色が消えて無色にな
る。この着色・消色する機構は詳しくは解明され
ていないがWO3薄膜及び絶縁膜中に含まれる微
量の水分が、WO3の着色・消色を支配している
ことが知られている。着色の反応式は下記のよう
に推定されている。 Electrochromism is a phenomenon in which a redox reaction occurs reversibly when a voltage is applied, and the substance reversibly develops and disappears in color. Attempts have been made to use materials that exhibit such phenomena, that is, electrochromic materials, to create display elements that repeatedly develop and discolor by applying and removing voltage, and to display clock numbers and computer numbers using these display elements. , has been going on for over 15 years. For example, a transparent electrode film (cathode), a tungsten trioxide thin film,
2. Description of the Related Art Electrochromic display elements are already known, which are formed by sequentially laminating an insulating film such as silicon dioxide and an electrode film (anode). When a voltage is applied to this display element, the tungsten trioxide (WO 3 ) thin film is colored blue. Then, when a reverse voltage is applied to this display element, the blue color of the WO 3 thin film disappears and it becomes colorless. Although the mechanism of coloring and decoloring has not been elucidated in detail, it is known that a trace amount of water contained in the WO 3 thin film and the insulating film controls the coloring and decoloring of WO 3 . The reaction formula for coloring is estimated as follows.
H2O→H++OH-
(WO3膜=陰極側)
WO3+nH++ne-→HnWO3
無色 青色
(絶縁膜=陽極側)
2OH-→H2O+1/2O2↑+e-
従つて、このような表示素子の欠点は、着色
反応の際、酸素ガス発生という好ましくない副反
応により含有水分が消費されること、及び逆の
消色反応によつて水が生成されないので、着色の
繰り返しには大気中からの水の補給が必要なこと
である。特に後者の理由により、このタイプの
表示素子には、着色の再現性が大気中の水分の影
響を受ける欠点がある。 H 2 O→H + +OH - (WO 3 film = cathode side) WO 3 +nH + +ne - →HnWO 3 colorless blue (insulating film = anode side) 2OH - →H 2 O+1/2O 2 ↑+e - Therefore, this The disadvantage of such display elements is that during the coloring reaction, the moisture content is consumed by an undesirable side reaction of oxygen gas generation, and water is not produced in the reverse decoloring reaction, so it is difficult to repeat coloring. Water needs to be replenished from the atmosphere. Particularly for the latter reason, this type of display element has the disadvantage that the reproducibility of coloring is affected by moisture in the atmosphere.
最近、着色反応により消費される水の量と同じ
量の水が消色反応により生成され、従つて外界か
らの水分の補給を必要とせずに着色・消色を繰り
返すことができ、しかも繰り返される着色濃度が
外界の影響を受けない全固体型エレクトロクロミ
ツク表示素子が提案された(特開昭52−73749号
公報参照)。この表示素子は、基本的には透明電
極、電解還元発色性薄膜例えばWO3、電解酸化
性薄膜例えばCr2O3及び対向電極を順次積層して
なるものである。また、前記公報の開示によれ
ば、電圧印加による着色後、電圧を解除した場
合、着色が自然放電により次第に消色する現象が
見られ、電圧解除後も着色が保存される性質(こ
れをメモリー性と言う)をこの表示素子に与える
ためには、透明電極と対向電極との間の任意の位
置に絶縁膜例えば二酸化ケイ素、フツ化マグネシ
ウムなどの薄膜を設けることが必要であると言
う。なお、この絶縁膜は本発明者らの推察によれ
ば、電子の良導体ではないが、プロトン(H+)
及びヒドロキシイオン(OH-)の移動は自由に
できる物質である。 Recently, the same amount of water is produced by the decoloring reaction as is consumed by the coloring reaction, and therefore coloring and decoloring can be repeated without the need for water supply from the outside world. An all-solid-state electrochromic display element whose color density is not affected by the external environment has been proposed (see Japanese Patent Laid-Open No. 73749/1983). This display element basically consists of a transparent electrode, an electrolytic reduction color forming thin film such as WO 3 , an electrolytic oxidizing thin film such as Cr 2 O 3 , and a counter electrode stacked one after another. Furthermore, according to the disclosure in the above-mentioned publication, when the voltage is removed after being colored by applying a voltage, a phenomenon in which the coloring gradually disappears due to spontaneous discharge is observed, and the property that the coloring is preserved even after the voltage is removed (this is stored in the memory). In order to provide this display element with the desired properties (referred to as "transparent"), it is necessary to provide an insulating film, such as a thin film of silicon dioxide, magnesium fluoride, etc., at any position between the transparent electrode and the counter electrode. According to the inventors' speculation, this insulating film is not a good conductor of electrons, but it is a good conductor of protons (H + ).
It is a substance that can freely move hydroxy ions (OH - ).
本発明者は今ここにそれ自体一部公知のエレク
トロクロミツク表示素子であるが、その製造方法
について研究を行なつた。 The present inventor has now conducted research on a method of manufacturing an electrochromic display element, which is partially known per se.
電解酸化性薄膜として水酸化ニツケルや水酸化
イリジウムを使用する場合、先ず、それらの金属
自体を真空蒸着した後、硫酸水溶液や水酸化ナト
リウム水溶液中で電解酸化(陽極酸化)すること
により、それらの金属を水酸化物に変えることを
試みた。しかしながら、このような酸又はアルカ
リ水溶液中での電解酸化は、その後の洗浄、乾燥
工程なども含め、極めて面倒であり、製造設備や
製造コストの上昇を招く。ところが、研究を進め
るうち本発明者らは偶然にも金属ニツケルや金属
イリジウムを蒸着した後、そのまま更に電極層を
蒸着し得られた構造物に大気中で交流電流をしば
らく通電すると次第にそれらの金属が大気中又は
他の層中の水分と反応して水酸化物に変わり、エ
レクトロクロミズムを示すことを発見した。 When using nickel hydroxide or iridium hydroxide as an electrolytically oxidized thin film, the metals themselves are first vacuum-deposited and then electrolytically oxidized (anodized) in a sulfuric acid aqueous solution or a sodium hydroxide aqueous solution. An attempt was made to convert metals into hydroxides. However, such electrolytic oxidation in an acid or alkaline aqueous solution is extremely troublesome, including subsequent washing and drying steps, and increases manufacturing equipment and manufacturing costs. However, as we proceeded with our research, the present inventors happened to deposit metal nickel or metal iridium, then deposited an electrode layer on it, and when we passed an alternating current through the resulting structure for a while in the atmosphere, these metals gradually disappeared. discovered that it reacts with moisture in the atmosphere or other layers and turns into hydroxide, exhibiting electrochromism.
従つて、本発明は、少なくとも次の5層:
A:電極層
B:可逆的に電解還元発色可能な層
C:電子絶縁性でイオン電導性の層
D:その水酸化物が可逆的に電解酸化可能な金属
の層
E:電極層
からなる構造物の電極間に水蒸気を含むガス雰囲
気中で交流電圧を印加してD層を水酸化物化する
ことを特徴とするエレクトロクロミツク表示素子
の製造方法を提供する。 Therefore, the present invention provides at least the following five layers: A: Electrode layer B: Layer capable of reversibly electrolytically reducing color development C: Electronically insulating and ionically conductive layer D: The hydroxide thereof is reversibly electrolytically reducible. Oxidizable metal layer E: Production of an electrochromic display element characterized by applying an alternating current voltage between the electrodes of a structure consisting of an electrode layer in a gas atmosphere containing water vapor to convert layer D into a hydroxide. provide a method.
水蒸気を含むガス雰囲気とは、大気中のほかに
水蒸気を含む密閉空間をも含み、圧力は特に大気
圧に限られるものではない。 A gas atmosphere containing water vapor includes not only the atmosphere but also a closed space containing water vapor, and the pressure is not particularly limited to atmospheric pressure.
本発明を実施するに際しては必要に応じ電極層
の外側に基板を設けてもよく、この場合には例え
ば、ガラス、セラミツクス、プラスチツクスのよ
うに強靭で透明なものが使用されるが、反射型の
表示素子の場合には、観察されない側の基板は必
ずしも透明である必要はない。 When carrying out the present invention, a substrate may be provided outside the electrode layer if necessary. In this case, for example, a strong and transparent material such as glass, ceramics, or plastic may be used, but a reflective type substrate may be used. In the case of a display element, the substrate on the side that is not observed does not necessarily have to be transparent.
A、Eの電極層としては、ネサ(SnO2)、ITO
(酸化インジウムに5%程度のSnO2の混入したも
の−透明性がよい)、酸化インジウム(In2O3)、
ヨウ化銅、金、白金、パラジウム、アルミニウ
ム、銀、導電性樹脂などが使用されるが、A、
E2層のうち少なくとも観察側の電極は透明でな
ければならない。電極層の厚さは0.01〜0.5μmで
十分であるが、これにより厚いものを望む場合に
は、厚くともよい。 As the electrode layers of A and E, Nesa (SnO 2 ), ITO
(indium oxide mixed with about 5% SnO 2 - good transparency), indium oxide (In 2 O 3 ),
Copper iodide, gold, platinum, palladium, aluminum, silver, conductive resin, etc. are used, but A,
At least the observation side electrode of the E2 layer must be transparent. A thickness of 0.01 to 0.5 μm is sufficient for the electrode layer, but it may be thicker if a thicker layer is desired.
B層の可逆的に電解還元発色可能な層として
は、三酸化タングステン、三酸化モリブデンが挙
げられるが、なかでも三酸化タングステンが好ま
しい。 Examples of the layer B, which can be reversibly colored by electrolytic reduction, include tungsten trioxide and molybdenum trioxide, and among them, tungsten trioxide is preferable.
C層の電子絶縁性でイオン電導性の層として
は、
液状電解質……例えば硫酸、塩酸のような酸
又はその水溶液、水酸化ナトリウム、水酸化カ
リウムのようなアルカリの水溶液、塩化ナトリ
ウム、塩化リチウム、塩化カリウム、硫酸リチ
ウムのような固体強電解質の水溶液、
半固体ゲル電解質……例えば電解質水溶液を
ゲル化剤例えばポリビニルアルコール、CMC、
寒天、ゼラチンなどでゲル化させたもの、
《P−TsOH+尿素(モル比で12:1で混合
したもの)》
固体電解質……例えばHVP、B−Al2O3、
Na3Zr2Si2PO12、Na1+xZr2SixP3−
xO12Na5YSi4O12、RbAg4I5、など
水又はイオン含有合成樹脂固体……例えばメ
タクリル酸β−ヒドロキシエチルと2−アクリ
ルアミド−2−メチルプロパンスルホン酸との
共重合体、含水メタクリル酸メチル共重合体の
ような含水ビニル重合体、含水ポリエステルな
ど、
その他……酸化タンタル(Ta2O5)、酸化ニ
オブ(Nb2O5)、酸化ジルコニウム(ZrO2)、
酸化チタン(TiO2)、酸化ハフニウム
(HfO2)、酸化イツトリウム(Y2O3)、酸化ラ
ンタン(La2O3)、酸化珪素(SiO2)フツ化マ
グネシウム、リン酸ジルコニウムあるいはこれ
らの混合物質であるがその中で酸化タンタルが
好ましい。これらの物質は、電子に対して絶縁
体であるが、プロトン(H+)及びヒドロキシ
イオン(OH-)に対しては良導体である。 The electronically insulating and ionically conductive layer of the C layer may be a liquid electrolyte...for example, an acid or aqueous solution thereof such as sulfuric acid or hydrochloric acid, an aqueous alkali solution such as sodium hydroxide or potassium hydroxide, sodium chloride, or lithium chloride. , aqueous solutions of solid strong electrolytes such as potassium chloride, lithium sulfate, semi-solid gel electrolytes...For example, electrolyte aqueous solutions can be mixed with gelling agents such as polyvinyl alcohol, CMC, etc.
Gelled with agar, gelatin, etc., <<P-TsOH + urea (mixed at a molar ratio of 12:1)>> Solid electrolyte...For example, HVP, B-Al 2 O 3 ,
Na 3 Zr 2 Si 2 PO 12 , Na 1 +xZr 2 SixP 3 −
xO 12 Na 5 YSi 4 O 12 , RbAg 4 I 5 , etc. Water or ion-containing synthetic resin solids...For example, copolymer of β-hydroxyethyl methacrylate and 2-acrylamido-2-methylpropanesulfonic acid, hydrated methacrylate Hydrous vinyl polymers such as acid methyl copolymers, hydrous polyesters, etc. Others... tantalum oxide (Ta 2 O 5 ), niobium oxide (Nb 2 O 5 ), zirconium oxide (ZrO 2 ),
Titanium oxide (TiO 2 ), hafnium oxide (HfO 2 ), yttrium oxide (Y 2 O 3 ), lanthanum oxide (La 2 O 3 ), silicon oxide (SiO 2 ), magnesium fluoride, zirconium phosphate, or a mixture thereof. However, among these, tantalum oxide is preferred. These materials are insulators for electrons, but good conductors for protons (H + ) and hydroxy ions (OH − ).
C層は液状又は半固体ゲル状の場合B層とD層
にサンドイツチされた形で存在するが、水又はイ
オン含有合成樹脂固体の場合B層とD層との接着
剤層を兼用させてもよく、この方法は本出願人の
特願昭56−98404号の明細書に詳しい。この場合、
C層の厚さは約0.1〜1000μmで十分である。 When the C layer is in liquid or semi-solid gel form, it exists in a sandwiched form with the B and D layers, but in the case of water or ion-containing synthetic resin solids, the B and D layers may also serve as an adhesive layer. This method is well known in the specification of Japanese Patent Application No. 56-98404 filed by the present applicant. in this case,
A thickness of about 0.1 to 1000 μm is sufficient for the C layer.
C層を薄くしたい目的あるいは液もれの心配を
解決したい目的から、のいわゆる固体絶縁体を
使用することは好ましく、この場合には厚さを
0.001〜10μmにすることが可能である。 It is preferable to use a so-called solid insulator in order to make the C layer thinner or to solve the problem of liquid leakage.
It is possible to set it to 0.001-10 micrometers.
C層は透過型の表示素子を希望する場合には、
できるだけ透明なものでなければならない。 If a transmission type display element is desired for the C layer,
It must be as transparent as possible.
D層の水酸化物が可逆的に電解酸化可能な金属
としては、例えばイリジウム、ニツケル、ムテニ
ウム、ロジウム、クロムなどが挙げられるがなか
でも、イリジウム及びニツケルが好ましい。これ
らの金属は水酸化物になるとエレクトロクロミズ
ムを示す。 Examples of metals to which the hydroxide of the D layer can be reversibly electrolytically oxidized include iridium, nickel, mutenium, rhodium, and chromium, among which iridium and nickel are preferred. These metals exhibit electrochromism when converted into hydroxides.
D層の厚さはB層も同じであるが、通常0.001
〜数μmで十分である。 The thickness of layer D is the same as layer B, but is usually 0.001
~ several μm is sufficient.
A〜E層は、C層が液状、半固体ゲル状、合成
樹脂である場合を除き、薄膜形成技術例えば真空
蒸着、スパツタリングなどにより形成される。 Layers A to E are formed by a thin film forming technique such as vacuum evaporation or sputtering, except when layer C is made of liquid, semi-solid gel, or synthetic resin.
また、パターン状に表示したい場合には、C層
を除く、いずれか少くとも一層をパターニングし
てもよく、あるいは任意の層間又は層上にパター
ン状の遮光層又は電子・イオン絶縁性の層を設け
てもよい。 In addition, when displaying in a pattern is desired, at least one layer other than the C layer may be patterned, or a patterned light-shielding layer or an electron/ion insulating layer may be placed between or on any layer. It may be provided.
A〜E層はC層の選択に応じてA〜Eを順に積
層するか又はA−B積層物とD−E積層物を予め
作成しておき、両者でC層を挾持する方法で所望
の構造物が作られる。 Layers A to E can be formed by laminating A to E in order depending on the selection of layer C, or by preparing an A-B laminate and a D-E laminate in advance and sandwiching layer C between them. A structure is created.
こうして得られた構造物を大気中に置き、その
A−E電極間に本発明に従い交流電圧を印加す
る。交流の周波数は0.01〜10Hz位で十分であり、
波形は三角波、矩形波、ノコギリ波、正弦波のい
ずれでもよい。電圧は0.5〜3ボルト位で十分で
ある。 The structure thus obtained is placed in the atmosphere, and an alternating current voltage is applied between the A and E electrodes according to the present invention. An AC frequency of 0.01 to 10Hz is sufficient;
The waveform may be a triangular wave, a rectangular wave, a sawtooth wave, or a sine wave. A voltage of about 0.5 to 3 volts is sufficient.
交流電圧を印加すると、D層の金属は大気中又
は他の層中からの水分と反応し、次第に金属色が
抜けて透明化し、やがてエレクトロクロミズムを
示すようになる。 When an alternating current voltage is applied, the metal in layer D reacts with moisture from the atmosphere or other layers, gradually loses its metallic color and becomes transparent, and eventually begins to exhibit electrochromism.
こうして、優れたエレクトロクロミツク表示素
子が得られる。 In this way, an excellent electrochromic display element is obtained.
本発明によれば、酸又はアルカリ水溶液中で電
解酸化する方法に比べて、製造設備及び工程が簡
略化され、製造コストの大巾な低下が期待され
る。 According to the present invention, compared to a method of electrolytic oxidation in an acid or alkaline aqueous solution, manufacturing equipment and processes are simplified, and a significant reduction in manufacturing costs is expected.
本発明により製造されたエレクトロクロミツク
表示素子は、低電圧で着色・消色を繰り返すこと
ができ、電卓や時計の数字又は文字の表示手段、
カメラ測量機等のフアインダー内の警告表示手
段、自動車のインスツルメントパネルの表示手
段、広告用デイスプレイなどに使用可能である。 The electrochromic display element manufactured according to the present invention can be repeatedly colored and decolored with low voltage, and can be used as a means for displaying numbers or characters in calculators and watches.
It can be used for warning display means in the viewfinder of camera surveying instruments, display means for automobile instrument panels, advertising displays, etc.
次に本発明の実施例を示す。 Next, examples of the present invention will be shown.
実施例 1
ガラス板に担持された厚さ0.15μmの透明電極
膜(ITO;微量の酸化スズの混入した酸化インジ
ウムで形成されている)の上に、真空蒸着法(真
空度1〜5×10-5Torr.蒸着速度0.001μm/sec)
により厚さ0.01μmのイリジウム金属の薄膜を形
成させた。Example 1 A transparent electrode film (ITO; made of indium oxide mixed with a trace amount of tin oxide) with a thickness of 0.15 μm supported on a glass plate was coated with a vacuum evaporation method (degree of vacuum 1 to 5 × 10 -5 Torr. Vapor deposition rate 0.001μm/sec)
A thin film of iridium metal with a thickness of 0.01 μm was formed.
更に真空蒸着法(真空度1〜2×10-4Torr.蒸
着速度2〜3×10-4μm/sec)により厚さ0.25μ
mの五酸化タンタルの透明な薄膜を形成させた。
五酸化タンタル薄膜の上に真空蒸着法(真空度1
〜2×10-4Torr.蒸着速度5〜10×10-4μm/sec)
により厚さ0.25μmの三酸化タングステンの透明
な薄膜を形成させた。 Furthermore, a thickness of 0.25 μm was obtained using a vacuum evaporation method (degree of vacuum: 1 to 2×10 -4 Torr. Deposition rate: 2 to 3×10 -4 μm/sec).
A transparent thin film of tantalum pentoxide of m was formed.
Vacuum evaporation method (vacuum degree 1) on tantalum pentoxide thin film
~2×10 -4 Torr. Vapor deposition rate 5 to 10×10 -4 μm/sec)
A transparent thin film of tungsten trioxide with a thickness of 0.25 μm was formed.
最後に対向電極として透明な酸化インジウムを
0.12μmの厚さに蒸着した。 Finally, transparent indium oxide was used as the counter electrode.
It was deposited to a thickness of 0.12 μm.
得られた構造物の2つの電極のうち、三酸化タ
ングステンに接している電極を外部電源の陰極
に、金属イリジウムに接している電極を外部電源
の陽極に接続し、0.5Hz、1.5ボルトの矩形波交流
電圧を印加すると、5分後には金属イリジウム層
が不透明暗灰色から次第に透明と着色を繰り返す
ようになつた。 Of the two electrodes of the resulting structure, the electrode in contact with tungsten trioxide was connected to the cathode of an external power source, and the electrode in contact with metal iridium was connected to the anode of an external power source. When a wave alternating current voltage was applied, the metallic iridium layer gradually changed from opaque dark gray to transparent and colored repeatedly after 5 minutes.
実施例 2
ガラス板に担持された厚さ0.15μmの透明電極
膜(ITO)の上に、真空蒸着法(真空度1〜5×
10-5Torr.蒸着速度10×10-4μm/sec)により厚
さ0.01μmのイリジウム金属薄膜を形成させた。Example 2 A transparent electrode film (ITO) with a thickness of 0.15 μm supported on a glass plate was coated with a vacuum evaporation method (degree of vacuum 1 to 5 ×
An iridium metal thin film with a thickness of 0.01 μm was formed at a deposition rate of 10 −5 Torr. (10×10 −4 μm/sec).
次いでイリジウム薄膜の上に真空蒸着法(真空
度1〜2×10-4Torr.蒸着速度2〜3×10-4μm/
sec)により厚さ0.25μmの五酸化タンタル膜を形
成させ、その上に真空蒸着法(真空度1〜2×
10-4Torr.蒸着速度5〜10×10-4μm/sec)によ
り厚さ0.25μmの透明な三酸化タングステン膜を
形成させた。 Next, a vacuum evaporation method (degree of vacuum 1 to 2 × 10 -4 Torr, deposition rate 2 to 3 × 10 -4 μm/
sec) to form a tantalum pentoxide film with a thickness of 0.25 μm, and then vacuum evaporation method (vacuum degree 1 to 2
A transparent tungsten trioxide film with a thickness of 0.25 μm was formed at a deposition rate of 5 to 10×10 −4 μm/sec (10 −4 Torr.).
形成された三酸化タングステン膜を写真蝕刻法
により所望のパターンにパターニングした。 The formed tungsten trioxide film was patterned into a desired pattern by photolithography.
最後に対向電極として透明な酸化インジウムを
全体に0.12μmの厚さに蒸着した。 Finally, transparent indium oxide was evaporated to a thickness of 0.12 μm over the entire surface as a counter electrode.
得られた構造物に実施例1と同様に0.5Hz、1.5
ボルトの矩形波交流電圧を印加すると、5分後に
は三酸化タングステン膜のパターン状に無色透明
←→着色を繰り返すようになつた。前記パターンを
除いた部分はエレクトロクロミツク性を示さなか
つたので、その部分に相当する金属イリジウム層
は水酸化物化されなかつたと言える。 The obtained structure was heated at 0.5 Hz and 1.5 Hz as in Example 1.
When a square wave AC voltage of volts was applied, after 5 minutes, the tungsten trioxide film began to repeat the pattern of colorless and transparent←→coloring. Since the portion excluding the pattern did not exhibit electrochromic properties, it can be said that the metal iridium layer corresponding to that portion was not converted into hydroxide.
実施例 3
実施例1に於いて、イリジウムの代りにルテニ
ウムを使用したが、ほぼ同様の表示素子が得られ
た。Example 3 In Example 1, ruthenium was used instead of iridium, but a substantially similar display element was obtained.
実施例 4
実施例1に於いて、イリジウムの代りにロジウ
ムを使用したが、ほぼ同様の表示素子が得られ
た。Example 4 In Example 1, rhodium was used instead of iridium, but a substantially similar display element was obtained.
実施例 5
ガラス板に担持された厚さ0.15μmの透明電極
膜(ITO)の上に真空蒸着法(真空度1〜2×
10-4Torr.蒸着速度2〜3×10-4μm/sec)によ
り金属ニツケルの薄膜(厚さ0.12μm)を形成さ
せた。この金属ニツケル薄膜を写真蝕刻法により
所定の形状にパターニングした。その後、実施例
1と同様に五酸化タンタル薄膜、三酸化タングス
テン薄膜、対向電極膜(酸化インジウム)を順次
に蒸着し、得られた構造物に0.5Hz、1.5ボルトの
三角波交流電圧を印加すると、5分後には、ニツ
ケルのパターンに相当する表示部が無色透明←→黒
つぽい灰色を繰り返すようになつた。着色前後の
コントラスト比は約1:2であつた。Example 5 A vacuum evaporation method (degree of vacuum 1 to 2×
A thin film (thickness: 0.12 μm) of nickel metal was formed at a deposition rate of 2 to 3×10 −4 μm/sec). This metallic nickel thin film was patterned into a predetermined shape by photolithography. Thereafter, as in Example 1, a tantalum pentoxide thin film, a tungsten trioxide thin film, and a counter electrode film (indium oxide) were sequentially deposited, and a triangular wave AC voltage of 0.5 Hz and 1.5 volts was applied to the resulting structure. After 5 minutes, the display area corresponding to the nickel pattern began to cycle from colorless and transparent to blackish gray. The contrast ratio before and after coloring was approximately 1:2.
実施例 6
横幅30mm×長さ20mm×厚さ1mmのムミラーの上
に0.15μmの厚さの透明なITO電極層を蒸着させ
た。このITO層の上に実施例1と同じ条件で厚さ
0.25μmの三酸化タングステンの薄層を形成し、
これにより第1部材を得た。第1部材と同様に形
成されたITO層の上に真空蒸着法(真空度1〜5
×10-5Torr;蒸着速度1×10-4μm/sec;温度
30℃)により、厚さ0.01μmのイリジウム金属の
薄層を形成させ、これにより第2部材を製造し
た。Example 6 A transparent ITO electrode layer with a thickness of 0.15 μm was deposited on a mirror with a width of 30 mm, a length of 20 mm, and a thickness of 1 mm. On top of this ITO layer, the thickness was
Form a thin layer of 0.25μm tungsten trioxide,
As a result, a first member was obtained. Vacuum evaporation method (vacuum degree 1 to 5
×10 -5 Torr; Vapor deposition rate 1 × 10 -4 μm/sec; Temperature
30° C.) to form a thin layer of iridium metal with a thickness of 0.01 μm, thereby producing a second member.
次いで両部材を、三酸化タングステン層と金属
イリジウム層が互いに内側になるように対向さ
せ、多少横にずらして重ね合わせ、両部材の中間
に水/アクリル酸=20/80(重量比)の混合液を
浸透させ、約20cm上にある500Wの水銀灯から紫
外線を10分間照射することによりアクリル酸を重
合硬化させた。 Next, both members are placed facing each other so that the tungsten trioxide layer and the metal iridium layer are on the inside of each other, shifted slightly laterally, and placed on top of each other, and a mixture of water/acrylic acid = 20/80 (weight ratio) is placed in the middle of both members. The solution was allowed to penetrate and the acrylic acid was polymerized and cured by irradiating it with ultraviolet light for 10 minutes from a 500W mercury lamp placed approximately 20cm above.
こうして厚さ約10μmのイオン透過性の電子絶
縁性樹脂層を有する構造物が得られた。両部材の
ITO層からリード線を取り出し三酸化タングステ
ン側を負に、金属イリジウム側を正になる様に
0.5Hz1.3ボルトの矩形波交流電圧を印加した。10
分経過すると、素子は次第に無色透明←→青色を繰
り返すようになつた。コントラスト比は1:3で
あつた。 In this way, a structure having an ion-permeable electronically insulating resin layer with a thickness of about 10 μm was obtained. of both parts
Take out the lead wire from the ITO layer and make sure that the tungsten trioxide side is negative and the metal iridium side is positive.
A square wave AC voltage of 0.5 Hz and 1.3 volts was applied. Ten
As minutes passed, the element gradually became colorless and transparent←→blue repeatedly. The contrast ratio was 1:3.
実施例 7
横幅30mm×長さ20mm×厚さ25μmの石英板の上
に酸素分圧2×10-4Torr、蒸着速度6×10-4μ
m/sec、温度100℃の条件のもとにRFイオンプ
レーテイング法により厚さ0.15μmの透明なITO
電極層を形成させた。次にこのITO層の上に真空
蒸着法(真空度1〜2×10-4Torr;蒸着速度5
〜10×10-4μm/sec;室温)により厚さ0.25μm
の三酸化タングステンの薄層を形成しこれにより
第1部材を得た。Example 7 Oxygen partial pressure 2 x 10 -4 Torr, evaporation rate 6 x 10 -4 μ on a quartz plate of width 30 mm x length 20 mm x thickness 25 μm.
Transparent ITO with a thickness of 0.15μm was produced using the RF ion plating method under the conditions of m/sec and temperature of 100℃.
An electrode layer was formed. Next, on top of this ITO layer, vacuum evaporation method (degree of vacuum: 1 to 2 × 10 -4 Torr; deposition rate: 5
~10×10 -4 μm/sec; room temperature) thickness 0.25μm
A thin layer of tungsten trioxide was formed to obtain a first member.
第1部材と同様に形成されたITO層の上に真空
蒸着法(真空度1〜5×10-5Torr、蒸着速度1
×10-4μm/sec;室温)により厚さ0.01μmのニ
ツケル金属の薄層を形成させ、これにより第2部
材を形成した。 Vacuum evaporation method (vacuum degree 1 to 5 x 10 -5 Torr, evaporation rate 1
×10 −4 μm/sec; room temperature) to form a thin layer of nickel metal with a thickness of 0.01 μm, thereby forming a second member.
次いで、この両部材を多少ずらして重ね合わ
せ、両部材の中間に、2−アクリルアミド−2−
メチルプロパンスルホン酸/2−ヒドロキシアク
リレート=40/60(重量比)を充填し、γ線
(0.4Mrad/hr)を約5分間照射したところ重合
硬化が完了した。こうして厚さ10μmのイオン透
過性の電子絶縁性樹脂層を有する構造物を得た。 Next, these two members are overlapped with a slight shift, and 2-acrylamide-2- is placed in the middle of both members.
It was filled with methylpropanesulfonic acid/2-hydroxyacrylate=40/60 (weight ratio) and irradiated with gamma rays (0.4 Mrad/hr) for about 5 minutes, completing polymerization and curing. In this way, a structure having an ion-permeable electronically insulating resin layer with a thickness of 10 μm was obtained.
両部材のITO層からリード線を引き出し実施例
1と同様の手法でセルに0.5Hz、1.3Vの交流電圧
を印加したところ、10分後には、無色透明←→黒つ
ぽい灰色を繰り返すようになり、そのコントラス
ト比は約1:2であつた。 When the lead wires were pulled out from the ITO layers of both components and an AC voltage of 0.5 Hz and 1.3 V was applied to the cell in the same manner as in Example 1, after 10 minutes, the color changed from colorless and transparent to blackish gray. The contrast ratio was approximately 1:2.
実施例 8
横幅100mm×長さ150mm×厚さ2mmのガラス基板
の上に0.15μmの厚さの透明なITO電極層を蒸着
させた。Example 8 A transparent ITO electrode layer with a thickness of 0.15 μm was deposited on a glass substrate with a width of 100 mm, a length of 150 mm, and a thickness of 2 mm.
このITO層の上に真空蒸着法(真空度1〜5×
10-5Torr.蒸着速度1×10-4μm/sec、温度150
℃)により厚さ0.04μmのイリジウム金属の薄膜
を形成させた。更に真空蒸着法(真空度1〜2×
10-4Torr、蒸着速度2〜3×10-4μm/sec)に
より、厚さ0.75μmの五酸化タンタルの透明な薄
膜を形成させた。五酸化タンタル層の上に真空蒸
着法(真空度1〜2×10-4Torr、蒸着速度5〜
10×10-4μm/sec)により、厚さ0.5μmの三酸化
タングステンの透明な薄膜を形成させた。 Vacuum evaporation method (vacuum degree 1 to 5 ×
10 -5 Torr. Vapor deposition rate 1×10 -4 μm/sec, temperature 150
℃) to form a thin film of iridium metal with a thickness of 0.04 μm. Furthermore, vacuum evaporation method (vacuum degree 1 to 2
A transparent thin film of tantalum pentoxide with a thickness of 0.75 μm was formed at a deposition rate of 2 to 3×10 −4 μm/sec. Vacuum evaporation method (vacuum degree 1 to 2 x 10 -4 Torr, evaporation rate 5 to
10×10 −4 μm/sec) to form a transparent thin film of tungsten trioxide with a thickness of 0.5 μm.
最後に対向電極として、アルミニウム金属を
0.12μmの厚さに蒸着して、反射型の素子を作製
した。 Finally, use aluminum metal as the counter electrode.
A reflective element was fabricated by vapor deposition to a thickness of 0.12 μm.
得られた構造物の二つの電極のうち、三酸化タ
ングステンに接している電極を外部電源の陰極
に、金属イリジウムに接している電極を外部電源
の陽極に接続し、0.2Hz、1.3ボルトの矩形波交流
電圧を印加した。30分経過すると素子は次第に、
透明反射←→青色反射を繰り返すようになつた。 Of the two electrodes of the resulting structure, the electrode in contact with tungsten trioxide was connected to the cathode of an external power source, and the electrode in contact with metal iridium was connected to the anode of an external power source. A wave alternating current voltage was applied. After 30 minutes, the element gradually becomes
Transparent reflection ← → Blue reflection now repeats.
この素子の反射率は、着色電圧(+1.3V)を
印加すると、透明なITO電極側から入射させた波
長633nmの光に対し、反射率が14%に減少し(5
秒後)、この反射率は電圧印加を止めてもしばら
く保たれた。今度は消色電圧(−1.3V)を印加
すると、同じく反射率は70%に回復した(1秒
後)。 When a coloring voltage (+1.3V) is applied, the reflectance of this element decreases to 14% (5
seconds later), this reflectance was maintained for a while even after the voltage application was stopped. When a decolorizing voltage (-1.3V) was applied this time, the reflectance recovered to 70% (after 1 second).
Claims (1)
の層 E:電極層 からなる構造物の電極間に水蒸気を含むガス雰囲
気中で交流電圧を印加してD層を水酸化物化する
ことを特徴とするエレクトロクロミツク表示素子
の製造方法。[Claims] 1 A: Electrode layer B: Layer capable of reversibly electrolytically reductively coloring C: Electronically insulating and ionically conductive layer D: Layer of metal whose hydroxide can be reversibly electrolytically oxidized E: A method for producing an electrochromic display element, which comprises applying an alternating current voltage between the electrodes of a structure consisting of electrode layers in a gas atmosphere containing water vapor to convert the D layer into a hydroxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56169712A JPS5870215A (en) | 1981-10-23 | 1981-10-23 | Production of electrochromic display element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56169712A JPS5870215A (en) | 1981-10-23 | 1981-10-23 | Production of electrochromic display element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5870215A JPS5870215A (en) | 1983-04-26 |
| JPS641775B2 true JPS641775B2 (en) | 1989-01-12 |
Family
ID=15891462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56169712A Granted JPS5870215A (en) | 1981-10-23 | 1981-10-23 | Production of electrochromic display element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5870215A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3900244A1 (en) * | 1988-01-05 | 1989-07-13 | Nikon Corp | METHOD FOR PRODUCING AN ELECTROCHROMIC COMPONENT |
| DE9111790U1 (en) * | 1991-09-20 | 1992-01-02 | TA Triumph-Adler AG, 8500 Nürnberg | Input keyboard for computers or similar. |
| TW201222118A (en) * | 2010-11-29 | 2012-06-01 | Metal Ind Res & Dev Ct | A colour-changing device of liquid filling type and the method thereof |
-
1981
- 1981-10-23 JP JP56169712A patent/JPS5870215A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5870215A (en) | 1983-04-26 |
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