JPS6418149A - Device for correcting white defect of photomask - Google Patents

Device for correcting white defect of photomask

Info

Publication number
JPS6418149A
JPS6418149A JP17380187A JP17380187A JPS6418149A JP S6418149 A JPS6418149 A JP S6418149A JP 17380187 A JP17380187 A JP 17380187A JP 17380187 A JP17380187 A JP 17380187A JP S6418149 A JPS6418149 A JP S6418149A
Authority
JP
Japan
Prior art keywords
window
conductive film
transparent conductive
photomask
passed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17380187A
Other languages
Japanese (ja)
Inventor
Yoichi Yoshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP17380187A priority Critical patent/JPS6418149A/en
Publication of JPS6418149A publication Critical patent/JPS6418149A/en
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To eliminate the need for frequent exchanges of a window by consisting the window of a glass plate having a transparent conductive film so that desired current can be passed to the transparent conductive film. CONSTITUTION:The window 11 is formed by depositing the transparent conductive film 22 by evaporation over the entire surface on the face of the glass plate 22 and depositing electrodes 24 by evaporation on both sides. One of the electrodes 24 of this window is connected to the plus terminal of a power supply 21 and the other is connected to the minus terminal so that the desired current can be passed to the transparent conductive film. Effective heating of only the window can be easily executed by passing the current to the transparent conductive film 23 and therefore, the flow of a correcting material near to the window is prevented. The need for the frequent exchanges of the window is thereby eliminated and the working rate of the device is improved.
JP17380187A 1987-07-14 1987-07-14 Device for correcting white defect of photomask Pending JPS6418149A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17380187A JPS6418149A (en) 1987-07-14 1987-07-14 Device for correcting white defect of photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17380187A JPS6418149A (en) 1987-07-14 1987-07-14 Device for correcting white defect of photomask

Publications (1)

Publication Number Publication Date
JPS6418149A true JPS6418149A (en) 1989-01-20

Family

ID=15967408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17380187A Pending JPS6418149A (en) 1987-07-14 1987-07-14 Device for correcting white defect of photomask

Country Status (1)

Country Link
JP (1) JPS6418149A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02204746A (en) * 1989-02-02 1990-08-14 Nec Corp Method for correcting chipping defect of photomask
JPH03120825A (en) * 1989-09-28 1991-05-23 Applied Materials Inc Boron phosphorus silicate glass compound layer on semiconductor wafer
JP2014525684A (en) * 2011-08-26 2014-09-29 カール ツァイス エスエムエス リミテッド Method and apparatus for locally deforming an optical element for photolithography

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02204746A (en) * 1989-02-02 1990-08-14 Nec Corp Method for correcting chipping defect of photomask
JPH03120825A (en) * 1989-09-28 1991-05-23 Applied Materials Inc Boron phosphorus silicate glass compound layer on semiconductor wafer
JP2014525684A (en) * 2011-08-26 2014-09-29 カール ツァイス エスエムエス リミテッド Method and apparatus for locally deforming an optical element for photolithography
US9606444B2 (en) 2011-08-26 2017-03-28 Carl Zeiss Sms Ltd. Method and apparatus for locally deforming an optical element for photolithography

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