JPS6418286A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS6418286A
JPS6418286A JP62174430A JP17443087A JPS6418286A JP S6418286 A JPS6418286 A JP S6418286A JP 62174430 A JP62174430 A JP 62174430A JP 17443087 A JP17443087 A JP 17443087A JP S6418286 A JPS6418286 A JP S6418286A
Authority
JP
Japan
Prior art keywords
output
laser device
oscillation frequency
varied
detecting part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62174430A
Other languages
Japanese (ja)
Inventor
Katsumi Emura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62174430A priority Critical patent/JPS6418286A/en
Publication of JPS6418286A publication Critical patent/JPS6418286A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To facilitate changing the output intensity of a laser device while its oscillation frequency is kept constant by a method wherein a current injected into an active region is varied by an output regulating circuit to change the output light intensity. CONSTITUTION:A half-mirror 6, a Fabry-Perot interferometer 7, a 1st photodetector 8, a 2nd photodetector 10 and a divider 12 are operated as a frequency detecting part. The frequency detecting part which monitors the oscillation frequency of a laser output is added to the outside of a semiconductor laser device. A control current It applied to a wavelength control region 115 is varied in accordance with a signal from the frequency detecting part to keep the oscillation frequency constant. Under this condition, a current Id injected into an active region 116 from an output regulating circuit 4 is varied. With this constitution, the output intensity of the laser device can be changed while the oscillation frequency is kept constant.
JP62174430A 1987-07-13 1987-07-13 Semiconductor laser device Pending JPS6418286A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62174430A JPS6418286A (en) 1987-07-13 1987-07-13 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62174430A JPS6418286A (en) 1987-07-13 1987-07-13 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS6418286A true JPS6418286A (en) 1989-01-23

Family

ID=15978398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62174430A Pending JPS6418286A (en) 1987-07-13 1987-07-13 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS6418286A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0615321A3 (en) * 1993-03-10 1994-12-21 At & T Corp Article comprising a wavelength-stabilized semiconductor laser.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0615321A3 (en) * 1993-03-10 1994-12-21 At & T Corp Article comprising a wavelength-stabilized semiconductor laser.

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