JPS6420635A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS6420635A JPS6420635A JP17762487A JP17762487A JPS6420635A JP S6420635 A JPS6420635 A JP S6420635A JP 17762487 A JP17762487 A JP 17762487A JP 17762487 A JP17762487 A JP 17762487A JP S6420635 A JPS6420635 A JP S6420635A
- Authority
- JP
- Japan
- Prior art keywords
- film
- groove
- region
- substrate
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 238000002955 isolation Methods 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Landscapes
- Formation Of Insulating Films (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To reduce a parasitic capacity and to obtain an element isolation region of a favorable shape by burying a polycrystalline silicon film containing oxygen in an element isolating silicon groove. CONSTITUTION:A P-type Si substrate 101 is thermally oxidized to form an Si oxide film 102, an Si nitride film 103 is formed thereon, and a photoresist film is selectively so formed as to expose a place to be formed with an element isolation region. With the photoresist film as a mask the films 103, 102 and the substrate 101 are etched to form grooves 105, an impurity is ion implanted to form a P<+> type region 106 in the bottom of the groove 105. Then, a resist film is removed, the groove 105 is thermally oxidized to form an Si oxide film 108, a polycrystalline silicon film 107 containing oxygen is grown on the whole surface including the film 108, the film 107 is so etched as to expose the film 103, and the exposed part of the film 107 is oxidized. Thereafter, the film 103 is removed, the film 102 is so removed at the region except the groove 105 until the substrate 101 is exposed to obtain an element isolating region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17762487A JPS6420635A (en) | 1987-07-15 | 1987-07-15 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17762487A JPS6420635A (en) | 1987-07-15 | 1987-07-15 | Semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6420635A true JPS6420635A (en) | 1989-01-24 |
Family
ID=16034256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17762487A Pending JPS6420635A (en) | 1987-07-15 | 1987-07-15 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6420635A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5661073A (en) * | 1995-08-11 | 1997-08-26 | Micron Technology, Inc. | Method for forming field oxide having uniform thickness |
| US5726084A (en) * | 1993-06-24 | 1998-03-10 | Northern Telecom Limited | Method for forming integrated circuit structure |
| US6362072B1 (en) | 1995-03-31 | 2002-03-26 | Stmicroelectronics S.R.L. | Process for realizing trench structures |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59178747A (en) * | 1983-03-29 | 1984-10-11 | Sony Corp | Manufacture of semiconductor device |
-
1987
- 1987-07-15 JP JP17762487A patent/JPS6420635A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59178747A (en) * | 1983-03-29 | 1984-10-11 | Sony Corp | Manufacture of semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5726084A (en) * | 1993-06-24 | 1998-03-10 | Northern Telecom Limited | Method for forming integrated circuit structure |
| US6362072B1 (en) | 1995-03-31 | 2002-03-26 | Stmicroelectronics S.R.L. | Process for realizing trench structures |
| US5661073A (en) * | 1995-08-11 | 1997-08-26 | Micron Technology, Inc. | Method for forming field oxide having uniform thickness |
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