JPS6420660A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6420660A JPS6420660A JP17601787A JP17601787A JPS6420660A JP S6420660 A JPS6420660 A JP S6420660A JP 17601787 A JP17601787 A JP 17601787A JP 17601787 A JP17601787 A JP 17601787A JP S6420660 A JPS6420660 A JP S6420660A
- Authority
- JP
- Japan
- Prior art keywords
- region
- schottky barrier
- type
- oxygen atoms
- increase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 230000004888 barrier function Effects 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 125000004430 oxygen atom Chemical group O* 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To suppress an increase in a forward voltage and to obtain a high breakdown voltage in the inverse direction by forming a polysilicon region which contains a specific amount of oxygen atoms between a low concentration semiconductor region and a Schottky barrier metal region. CONSTITUTION:An N-type semiconductor silicon region 2 having the same conductivity type as an N-type semiconductor silicon substrate 1 and predetermined concentration is, for example, epitaxially grown on the substrate 1. Further, an opposite conductivity type P-type diffused region 3 which becomes a guard ring region is formed, and the window of a Schottky barrier region 4 is formed. Thereafter, a polysilicon region 8 which contains 0-45% of oxygen atoms is formed, a Schottky barrier metal region 5 is formed thereon, and a cathode electrode 6 and an insulating film 7 are formed. Thus, an increase in a forward voltage is suppressed to obtain a high breakdown voltage in the inverse direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17601787A JPS6420660A (en) | 1987-07-16 | 1987-07-16 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17601787A JPS6420660A (en) | 1987-07-16 | 1987-07-16 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6420660A true JPS6420660A (en) | 1989-01-24 |
Family
ID=16006264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17601787A Pending JPS6420660A (en) | 1987-07-16 | 1987-07-16 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6420660A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH058952U (en) * | 1991-07-15 | 1993-02-05 | 日本インター株式会社 | Shutoki barrier diode |
-
1987
- 1987-07-16 JP JP17601787A patent/JPS6420660A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH058952U (en) * | 1991-07-15 | 1993-02-05 | 日本インター株式会社 | Shutoki barrier diode |
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