JPS645070A - Vertical insulated gate field effect transistor - Google Patents

Vertical insulated gate field effect transistor

Info

Publication number
JPS645070A
JPS645070A JP62160612A JP16061287A JPS645070A JP S645070 A JPS645070 A JP S645070A JP 62160612 A JP62160612 A JP 62160612A JP 16061287 A JP16061287 A JP 16061287A JP S645070 A JPS645070 A JP S645070A
Authority
JP
Japan
Prior art keywords
substrate
regions
thick part
type
gate insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62160612A
Other languages
Japanese (ja)
Inventor
Masanori Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62160612A priority Critical patent/JPS645070A/en
Publication of JPS645070A publication Critical patent/JPS645070A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

PURPOSE:To reduce an ON resistance and avoid punch through by a method wherein a thick part is provided at a part of a gate insulating film apart from base regions and a high impurity concentration region with a conductivity type same as that of a substrate is provided in the main surface of the substrate directly under the thick part of the gate insulating film. CONSTITUTION:On the main surface of a substrate composed of an N<+>type semiconductor foundation board 1 made of silicon and an N<->type epitaxial layer 2 built up on the foundation board 1, P-type base regions 8-1 and 8-2 are provided and, at the same time, a gate insulating film 13 is formed on the main surface of the substrate including the base regions 8-1 and 8-2. A thick part 6 is provided in the film 13 at the position apart from the regions 8-1 and 8-2 and, further, an N-type region 5' which has a higher impurity concentration than its surroundings is provided in the substrate directly under the thick part 6 apart from the regions 8-1 and 8-2. With this constitution, the spread of a depletion layer between the regions 8-1 and 8-2 and the substrate can be suppressed.
JP62160612A 1987-06-26 1987-06-26 Vertical insulated gate field effect transistor Pending JPS645070A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62160612A JPS645070A (en) 1987-06-26 1987-06-26 Vertical insulated gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62160612A JPS645070A (en) 1987-06-26 1987-06-26 Vertical insulated gate field effect transistor

Publications (1)

Publication Number Publication Date
JPS645070A true JPS645070A (en) 1989-01-10

Family

ID=15718699

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62160612A Pending JPS645070A (en) 1987-06-26 1987-06-26 Vertical insulated gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS645070A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02216871A (en) * 1989-02-17 1990-08-29 Fuji Electric Co Ltd Power mosfet
EP0747968A1 (en) * 1995-06-07 1996-12-11 STMicroelectronics, Inc. Structure and process for reducing the on-resistance of MOS-gated power devices
US5612566A (en) * 1993-11-30 1997-03-18 Siliconix Incorporated Bidirectional blocking lateral MOSFET with improved on-resistance
US7067363B2 (en) * 2002-12-30 2006-06-27 Stmicroelectronics S.R.L. Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performances and high scaling down density
WO2008108360A1 (en) 2007-03-05 2008-09-12 Toyo Ink Mfg. Co., Ltd. Composition for battery
JP2009032919A (en) * 2007-07-27 2009-02-12 Sumitomo Electric Ind Ltd Oxide field effect transistor and manufacturing method thereof
WO2011013380A1 (en) * 2009-07-31 2011-02-03 Fuji Electric Systems Co., Ltd. Manufacturing method of semiconductor apparatus and semiconductor apparatus
CN102148164A (en) * 2011-03-10 2011-08-10 上海宏力半导体制造有限公司 Formation method for VDMOS (vertical double-diffused metal oxide semiconductor) device
JP2012124536A (en) * 2012-03-23 2012-06-28 Sumitomo Electric Ind Ltd Metal oxide semiconductor field effect transistor and manufacturing method of the same
CN113506829A (en) * 2021-07-05 2021-10-15 西安卫光科技有限公司 Step gate dielectric layer structure and manufacturing method thereof
CN115148819A (en) * 2022-06-22 2022-10-04 中国电子科技集团公司第五十五研究所 Power MOSFET gate structure and preparation method for resisting single-event gate damage

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57103361A (en) * 1980-10-29 1982-06-26 Siemens Ag Mis controlled semiconductor element
JPS59151466A (en) * 1983-02-17 1984-08-29 Nissan Motor Co Ltd Vertical type metal oxide semiconductor field-effect transistor
JPS6225457A (en) * 1985-07-25 1987-02-03 Tdk Corp Manufacturing method of vertical semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57103361A (en) * 1980-10-29 1982-06-26 Siemens Ag Mis controlled semiconductor element
JPS59151466A (en) * 1983-02-17 1984-08-29 Nissan Motor Co Ltd Vertical type metal oxide semiconductor field-effect transistor
JPS6225457A (en) * 1985-07-25 1987-02-03 Tdk Corp Manufacturing method of vertical semiconductor device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02216871A (en) * 1989-02-17 1990-08-29 Fuji Electric Co Ltd Power mosfet
US5612566A (en) * 1993-11-30 1997-03-18 Siliconix Incorporated Bidirectional blocking lateral MOSFET with improved on-resistance
EP0747968A1 (en) * 1995-06-07 1996-12-11 STMicroelectronics, Inc. Structure and process for reducing the on-resistance of MOS-gated power devices
US7067363B2 (en) * 2002-12-30 2006-06-27 Stmicroelectronics S.R.L. Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performances and high scaling down density
US7304335B2 (en) * 2002-12-30 2007-12-04 Stmicroelectronics S.R.L. Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performance and high scaling down density
WO2008108360A1 (en) 2007-03-05 2008-09-12 Toyo Ink Mfg. Co., Ltd. Composition for battery
JP2009032919A (en) * 2007-07-27 2009-02-12 Sumitomo Electric Ind Ltd Oxide field effect transistor and manufacturing method thereof
US9312379B2 (en) 2009-07-31 2016-04-12 Fuji Electric Co., Ltd. Manufacturing method of semiconductor apparatus and semiconductor apparatus
JP2012527114A (en) * 2009-07-31 2012-11-01 富士電機株式会社 Semiconductor device manufacturing method and semiconductor device
US9136352B2 (en) 2009-07-31 2015-09-15 Fuji Electric Co., Ltd. Manufacturing method of semiconductor apparatus and semiconductor apparatus
WO2011013380A1 (en) * 2009-07-31 2011-02-03 Fuji Electric Systems Co., Ltd. Manufacturing method of semiconductor apparatus and semiconductor apparatus
US9496370B2 (en) 2009-07-31 2016-11-15 Fuji Electric Co., Ltd. Manufacturing method of semiconductor apparatus and semiconductor apparatus
CN102148164A (en) * 2011-03-10 2011-08-10 上海宏力半导体制造有限公司 Formation method for VDMOS (vertical double-diffused metal oxide semiconductor) device
JP2012124536A (en) * 2012-03-23 2012-06-28 Sumitomo Electric Ind Ltd Metal oxide semiconductor field effect transistor and manufacturing method of the same
CN113506829A (en) * 2021-07-05 2021-10-15 西安卫光科技有限公司 Step gate dielectric layer structure and manufacturing method thereof
CN115148819A (en) * 2022-06-22 2022-10-04 中国电子科技集团公司第五十五研究所 Power MOSFET gate structure and preparation method for resisting single-event gate damage

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