JPS6421928A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6421928A JPS6421928A JP17827487A JP17827487A JPS6421928A JP S6421928 A JPS6421928 A JP S6421928A JP 17827487 A JP17827487 A JP 17827487A JP 17827487 A JP17827487 A JP 17827487A JP S6421928 A JPS6421928 A JP S6421928A
- Authority
- JP
- Japan
- Prior art keywords
- material layer
- mesa
- layer
- ohmic electrode
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Weting (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To obtain a semiconductor device having an ohmic electrode in a shape so as to cover a mesa flat part, by using a semiconductor substrate, which undergoes selective mesa etching as an etching mask, and forming the ohmic electrode. CONSTITUTION:An electric conductive layer 2, which is to become an ohmic electrode, is formed on the entire one main surface of a semiconductor substrate 1. A material layer 3a, which is to become an etching mask, is formed on the surface of the conductive layer 2. Thereafter, a hole part 4a is formed in the material layer 3a selectively by a photolithography technology. Then with said material layer 3a other than the hole part 4a as a mask, isotropic etching is performed. A mesa flat part 6 is formed on the semiconductor substrate 1, which is covered with the conductive layer 2. A mesa-etched part 5, at which an undercut is yielded, is formed in the vicinity of the hole part 4a. Then, said material is made to remain only on the conductor layer on the mesa-etched flat part 6, where an ohmic electrode 2a is to be formed. The other material layer 3a is removed. With the remaining material layer 3a as a mask, the conduct layer 2 is etched. Thereafter, said material layer is removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17827487A JPS6421928A (en) | 1987-07-16 | 1987-07-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17827487A JPS6421928A (en) | 1987-07-16 | 1987-07-16 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6421928A true JPS6421928A (en) | 1989-01-25 |
| JPH0546972B2 JPH0546972B2 (en) | 1993-07-15 |
Family
ID=16045606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17827487A Granted JPS6421928A (en) | 1987-07-16 | 1987-07-16 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6421928A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024526040A (en) * | 2021-07-02 | 2024-07-17 | エイエムエス－オスラム インターナショナル ゲーエムベーハー | Optoelectronic semiconductor devices, arrays of optoelectronic semiconductor devices, and methods of manufacturing optoelectronic semiconductor devices - Patents.com |
-
1987
- 1987-07-16 JP JP17827487A patent/JPS6421928A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024526040A (en) * | 2021-07-02 | 2024-07-17 | エイエムエス－オスラム インターナショナル ゲーエムベーハー | Optoelectronic semiconductor devices, arrays of optoelectronic semiconductor devices, and methods of manufacturing optoelectronic semiconductor devices - Patents.com |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0546972B2 (en) | 1993-07-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0272453A3 (en) | Merged bipolar/cmos technology using electrically active trench | |
| JPS6413739A (en) | Manufacture of order-made integrated circuit | |
| JPS6451665A (en) | Semiconductor device | |
| JPS5373083A (en) | Method of producing semiconductor | |
| JPS6421928A (en) | Manufacture of semiconductor device | |
| JPS55150271A (en) | Semiconductor device | |
| JPS6472567A (en) | Manufacture of semiconductor device | |
| JPS57181160A (en) | Transistor | |
| JPS57145327A (en) | Manufacture of semiconductor device | |
| JPS5661175A (en) | Thin-film solar cell | |
| JPS572519A (en) | Manufacture of semiconductor device | |
| JPS5658258A (en) | Semiconductor integrated circuit | |
| JPS55120170A (en) | Mos type semiconductor device | |
| JPS6480076A (en) | Manufacture of semiconductor device | |
| JPS56105673A (en) | Semiconductor device | |
| JPS56111264A (en) | Manufacture of semiconductor device | |
| JPS6437037A (en) | Manufacture of semiconductor device | |
| JPS57207350A (en) | Manufacture of semiconductor device | |
| JPS6490563A (en) | Semiconductor device and manufacture thereof | |
| JPS5752130A (en) | Forming method for electrode | |
| JPS6467974A (en) | Manufacture of semiconductor device | |
| JPS57193062A (en) | Manufacture of semiconductor device | |
| JPS571261A (en) | Schottky barrier type semiconductor device | |
| JPS5516428A (en) | Semiconductor device | |
| JPS5736871A (en) | Semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070715 Year of fee payment: 14 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080715 Year of fee payment: 15 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080715 Year of fee payment: 15 |