JPS642193B2 - - Google Patents

Description

Detailed Description of the Invention The present invention provides a first non-single crystal semiconductor layer having P type or N type, a second non-single crystal semiconductor layer having I type, and a first non-single crystal semiconductor layer having P type or N type on a substrate. The present invention relates to an apparatus for forming a non-single-crystal semiconductor layer, which is used to form a third non-single-crystal semiconductor layer having a mold in that order.

A conventional apparatus for forming a non-single crystal semiconductor layer consists of (1) placing a substrate in a reactor, discharging the gas in the reactor, and injecting a first semiconductor material gas and a first semiconductor material into the reactor; introducing a first gas containing an impurity gas and ionizing the first gas into a first gas plasma, thereby forming a first semiconductor material on the substrate to form a first non-single crystal semiconductor layer; Deposit the first
(2) Next, the inside of the reactor is evacuated, and a second gas containing a second semiconductor material gas and a second impurity gas is introduced into the same reactor. and ionizing the second gas into a second gas plasma, thereby forming a second non-single crystal semiconductor layer on the first non-single crystal semiconductor layer.
(3) Next, the reactor is evacuated, and a third semiconductor material gas and a third non-single crystal semiconductor layer are deposited in the same reactor.
A third gas containing an impurity gas of It has been common practice to deposit a third semiconductor material to form a third non-single crystal semiconductor layer.

Therefore, the conventional non-single-crystal semiconductor layer forming apparatus sequentially forms the first, second, and third non-single-crystal semiconductor layers on a substrate using a common reaction furnace. It was common to have a similar structure.

For this reason, according to the conventional non-single crystal semiconductor layer forming apparatus, it has been considered to form a large number of substrates in which first, second and third non-single crystal semiconductor layers are sequentially formed in that order. In this case, when the second or third non-single crystal semiconductor layer is being formed on one substrate, the first or second non-single crystal semiconductor layer is simultaneously formed on another substrate. I couldn't do anything.

Therefore, when considering the formation of a large number of substrates on which first, second, and third non-single crystal semiconductor layers are formed in that order, the conventional apparatus for forming a non-single crystal semiconductor layer can: Moreover, it takes a long time and therefore it is not possible to mass-produce a large number of substrates on which the first, second and third non-single crystal semiconductor layers are sequentially formed. It had drawbacks.

Therefore, the present invention provides a novel non-single-crystal semiconductor layer that can sequentially form the above-described first, second, and third non-single-crystal semiconductor layers on a substrate without the above-mentioned drawbacks. The purpose of this paper is to propose a layer-forming device.

According to the apparatus for forming a non-single-crystal semiconductor layer according to the present invention, the first, second, and third non-single-crystal semiconductor layers are formed on the substrate using the first, second, and third reactors, respectively. It has a configuration configured to do so.

Therefore, according to the apparatus for forming a non-single-crystal semiconductor layer according to the present invention, a large number of substrates on which the first, second, and third non-single-crystal semiconductor layers are sequentially formed are formed in succession. If you think about it, the first
A first non-single crystal semiconductor layer is formed on the second substrate using a first reactor, and then a second non-single crystal semiconductor layer is formed on the first substrate using a second reactor. When the first non-single crystal semiconductor layer is formed using the first reactor, the first non-single crystal semiconductor layer can be simultaneously formed on the second substrate using the first reactor; A second non-single crystal semiconductor layer is formed on the second substrate using a second reaction furnace, and simultaneously a first non-single crystal semiconductor layer is formed on the second substrate in the first reaction furnace. When a third non-single crystal semiconductor layer is formed on the first substrate using a third reactor, a second non-single crystal semiconductor layer is simultaneously formed on the second substrate. A non-single crystal semiconductor layer can be formed using the second reactor, and a first non-single crystal semiconductor layer can be formed on the third substrate using the first reactor. can.

Therefore, the apparatus for forming a non-single-crystal semiconductor layer according to the present invention is suitable for forming a large number of substrates on which the first, second, and third non-single-crystal semiconductor layers are sequentially formed. In addition, it requires a shorter time than the conventional non-single crystal semiconductor layer forming apparatus, and therefore the first, second and third non-single crystal semiconductor layers can be formed in that order. A large number of substrates can be easily manufactured in mass production.

Next, an embodiment of the apparatus for forming a non-single crystal semiconductor layer according to the present invention will be described with reference to the drawings.

The figure shows an embodiment of an apparatus for forming a non-single crystal semiconductor layer according to the present invention, and has the configuration described below.

That is, the first, second, third and fourth systems,
, and has.

The first system is connected to the inlet 30 via the shutter 44.
A reactor 45 is provided with an excitation chamber 32 connected via a homogenizer 34, and a substrate 31 is placed in the reactor 45 from the inlet 30 by temporarily opening the shutter 44. is configured to be

Further, this reactor 45 has a plurality of gas sources 40, 41, and 42 connected to each other via a valve 38 as a gas supply control means on the excitation chamber 32 side. 42
A first semiconductor material gas for forming a first non-single crystal semiconductor layer and a first impurity for imparting P-type or N-type to the first non-single crystal semiconductor layer are placed on the substrate 31 from among the necessary ones. The first gas containing the gas is introduced into the reactor 45 via the valve 38.

Furthermore, it has a high frequency heating source 35 arranged around the reactor 45 and a high frequency induction energy source 33 arranged around the excitation chamber 32 of the reaction furnace 45, and the high frequency energy source 35 and the high frequency induction energy Source 33 is configured to ionize a first gas introduced into reactor 45 into a first gas plasma.

It also has a vacuum pump 36 as a gas exhaust means connected to the reactor 45 and having an exhaust pipe 37 extending to the outside. In order to deposit the first semiconductor material forming the non-single crystal semiconductor layer, the first gas plasma described above is caused to flow, and the inside of the reactor 45 is maintained at a pressure of 1 atmosphere or less. .

Further, in the reactor 45, the temperature of the substrate 31 placed therein is controlled by the above-mentioned high frequency energy source 35, so that the first non-single crystal semiconductor layer is made into a single crystal. The temperature is also maintained at a low temperature, for example in the range of room temperature to 400°C.

The above is the configuration of the first system.

The second, third, and fourth systems are similar to the first system, although detailed explanations are omitted, as indicated by ``,'', respectively, on corresponding parts of the first system. It has a configuration.

However, the reactors 45', 45'' and 45 of the second, third and fourth systems are connected to the reactors 45, 45' and 45'' through shutters, respectively. Further, an outlet 59 is connected to the fourth system reactor 45'' via a shutter 44'.

In addition, gas sources 40', 41' and 4 of the second system
5', a second gas containing a second semiconductor material gas for forming a second non-single crystal semiconductor layer on the first non-single crystal semiconductor layer formed on the substrate 31; is connected to the reactor 4 via valve 38'.
5'.

Furthermore, from the required gas sources 40'', 41'' and 42'' of the third system, a second semiconductor material gas and a second semiconductor material gas for forming the third non-single crystal semiconductor layer formed on the substrate 31 are added. a second impurity gas that gives P type or N type to the non-single crystal semiconductor layer of No. 3;
gas is introduced into the reactor 45'' through the valve 38''.

Further, the reactor 4 is heated by the high frequency heating source 35' and the high frequency induction energy source 33' of the second system.
The second gas introduced into 5' is ionized into a second gas plasma.

Furthermore, the reactor 4 is heated by the high frequency heating source 35'' and high frequency induction energy 33'' of the third system.
5'' is ionized into a third gas plasma.

Also, by the second system vacuum pump 36',
In order to deposit a second semiconductor material forming a second non-single-crystal semiconductor layer on the first non-single-crystal semiconductor layer on the substrate 31, the second gas plasma described above is supplied and the reactor 45 is ' is maintained at a pressure of 1 atmosphere or less.

Further, a third semiconductor material forming a third non-single crystal semiconductor layer is deposited on the second non-single crystal semiconductor layer on the substrate 31 by the third system vacuum pump 36''. , the above-mentioned third gas plasma is supplied, and the reactor 45'' is maintained at a pressure of 1 atmosphere or less.

Furthermore, the second and third systems and the high frequency energy sources 35' and 35'' control the temperature of the substrate 31 so that the second and third semiconductor materials, respectively, are connected to the first and second non-single crystal semiconductors, respectively. The temperature is maintained at a temperature lower than that for single crystallization on the layer, for example in the range of room temperature to 400°C.

Note that in the fourth system, the gas source 40'',
From the required ones in 41 and 42, reactor 4
An inert gas is introduced into the substrate 5'' to anneal the first, second and third non-single crystal semiconductor layers formed on the substrate 31.

The above is the configuration of the embodiment of the apparatus for forming a non-single crystal semiconductor layer according to the present invention.

According to such a configuration, it is clear from what has been described above, and detailed explanation will be omitted, but the first, second, and third non-single crystal semiconductor layers are replaced by the first, second, and third non-single crystal semiconductor layers, respectively. Since the apparatus for forming a non-single crystal semiconductor layer according to the present invention has a configuration in which the formation is performed using the reactors 45, 15' and 45'', the first, second and third layers are formed on the substrate. The non-single crystal semiconductor layers are formed into first, second and third layers, respectively.
It has a configuration adapted to be formed using a reactor.

Therefore, according to the apparatus for forming a non-single-crystal semiconductor layer according to the present invention, a large number of substrates on which the first, second, and third non-single-crystal semiconductor layers are sequentially formed (these are , second, third...
When considering continuous formation of substrates (referred to as substrates of When forming the second non-single crystal semiconductor layer on the first substrate using the second reactor 45', simultaneously forming the first non-single crystal semiconductor layer on the second substrate. In this way, the second non-single crystal semiconductor layer can be formed on the first substrate using the first reactor 45.
5' and at the same time, a first non-single crystal semiconductor layer is formed on the second substrate using the first reactor 45, and then on the first substrate. When forming the third non-single crystal semiconductor layer using the third reactor 45'', at the same time, the second non-single crystal semiconductor layer is formed on the second substrate using the second reactor 45'. It can be formed using
A first non-single crystal semiconductor layer can be formed on the third substrate using the first reactor 45.

Therefore, the apparatus for forming a non-single-crystal semiconductor layer according to the present invention is suitable for forming a large number of substrates on which the first, second, and third non-single-crystal semiconductor layers are sequentially formed. In addition, it requires a shorter time than the conventional non-single crystal semiconductor layer forming apparatus, and therefore the first, second and third non-single crystal semiconductor layers can be formed in that order. A large number of substrates can be easily manufactured in mass production.

Next, an embodiment of the apparatus for forming a non-single crystal semiconductor layer according to the present invention described above will be explained using a substrate 31 having a size of 100 mm square and having a structure in which a transparent conductive film is formed on an insulating substrate. Above, first;
The second and third non-single crystal semiconductor layers are each made of P
More specifically, in the case where it is formed as having type, I type and N type and both are made of Si,
It is as follows.

That is, the first, second, third and fourth systems,
Reactor 45, 45', 4 in , and
5'' and 45 each have dimensions of approximately 350 mm in length, 350 mm in width, and 300 mm in height.

In addition, the first, second, third and fourth systems,
Excitation chambers 32, 32', 32'', 3 in and
No. 2 was formed by a cylindrical body having a diameter of about 200 mm, a height of about 200 mm, and one end surface of which was closed.

Furthermore, the inlet 30 and the reactor 45 of the first system
between the reactor 45 of the first system and the reactor 45' of the second system; between the reactor 45' of the second system and the reactor 45' of the second system
between the reactors 45'' of the third system, and the reactor 4 of the third system.
5'' and the wall between the reactor 45'' of the fourth system, and the wall between the reactor 45 of the fourth system and the outlet 59, both of which can easily pass the substrates 31 and 31'.
The shutter 44 between the inlet 30 and the first system reactor 45, the first system reactor 45 and the second system reactor 45' have an opening of 130 mm in size. During this period, the reactor 4 of the second system
5' and the third system reactor 45'', a shutter between the third system reactor 45'' and the fourth system reactor 45, and a shutter between the fourth system reactor 45 and the outlet 59. The shutter 44' between the shutter 44' and the shutter 44' can both open and close the five openings mentioned above.

In addition, the first, second, third and fourth systems,
The homogenizer (indicated by the reference numeral 34 in the first system) between the above-mentioned reactor and the above-mentioned excitation chamber in each of and was made of a porous quartz plate.

In addition, the first, second, third and fourth systems,
and high frequency energy sources 35, 35',
35'' and 35 are both made of heaters that generate heat by applying high frequency electricity.

Furthermore, first, second, third and fourth systems,
High frequency induced energy source 3 in , and
3, 33', 33'', and 33 were designed to provide a high frequency wave having a frequency of 13.56 MHz and a power of about 200 W.

In addition, the first, second, third and fourth systems,
Vacuum pumps 36, 36', 3 in and
6″ and 36 were rotary pumps.

Furthermore, in the first system, the gas source 40 is
Then, it is assumed that SiH ₄ is obtained as a semiconductor material gas, the gas source 41 is assumed that B ₂ H ₆ diluted with hydrogen is obtained as a P-type impurity gas, and the gas source 42 is a nitrogen gas is obtained as a carrier gas.

In addition, in the second system, the gas source 40' is
Then, SiH ₄ was obtained as a semiconductor raw material gas, and the gas source 42'' was assumed to be one in which N ₂ was obtained as a carrier gas.
1' was not used.

In addition, in the third system, the gas source 40'' is
Assume that SiH ₄ is obtained as a semiconductor raw material gas,
Furthermore, the gas source 41'' was one in which PH ₄ diluted with hydrogen was obtained as an impurity gas, and the gas source 42'' was one in which N ₂ was obtained as a carrier gas.

Further, in the fourth system, the gas source 40' is
It is assumed that H ₂ is available and that the gas source 42 is
It was assumed that _N2 was obtained. Note that the gas source 41
shall not be used.

As described above, the first, second, and third non-single crystal semiconductor layers are formed on the substrate 31, which has a size of 100 mm square and has a structure in which a transparent conductive film is formed on an insulating substrate. A concrete example of the apparatus for forming a non-single crystal semiconductor layer according to the present invention described above, which is formed as a layer having a type, an I type, and an N type, both of which are made of Si, has been specifically clarified. In order to understand the characteristics of the embodiment of the apparatus for forming a non-single crystal semiconductor layer according to the present invention, the above-mentioned specific example will be used to explain A specific example of a method for forming the first, second, and third non-single crystal semiconductor layers on the above-described substrate 31 is as follows.

That is, in the first system, with the reactor 45 evacuated in advance by the vacuum pump 36,
The substrate 31 is placed in a reactor 45 through a previously evacuated inlet 30 with a shutter 44 temporarily opened, and then the substrate 31 is brought to a temperature of about 250° C. by a heater serving as a high frequency energy source 35. In the heated state, semiconductor material gas, P-type impurity gas, and carrier gas SiH ₄ , B ₂ H ₆ , and N ₂ are introduced into the excitation chamber 32 as a first gas from gas sources 40, 41, and 42, respectively. While evacuating the reactor 45 using the vacuum pump 36 to maintain a pressure of 0.1 Torr, SiH ₄ and B ₂ H ₆ were introduced at a flow rate ratio of about 5 ppm. , the first gas is ionized into a first gas plasma by heat from the radio frequency energy source 35 and radio frequency from the radio frequency dielectric energy source 33, thereby forming a P-type plasma on the substrate 31. A first non-single crystal semiconductor layer made of Si and having a thickness of 100 Å was formed.

Further, in the second system, while the inside of the reactor 45' is evacuated in advance by the vacuum pump 36',
The substrate 31 on which the above-mentioned P-type first non-single crystal semiconductor layer is formed is placed in the reactor 45' from the previously evacuated reactor 45 of the first system with the shutter temporarily opened. Next, while the substrate 31 is heated to a temperature of about 250° C. by a heater serving as a high-frequency energy source 35, SiH ₄ and N ₂ are supplied as a semiconductor material gas and a carrier gas from gas sources 40′ and 42′, respectively. as the second gas in the excitation chamber 3
2, the reactor 45' is introduced into the reactor 45' by a vacuum pump 36' while being evacuated so as to maintain a pressure of 0.1 Torr inside the reactor 45', and the second gas is introduced into the reactor 45' by a high frequency energy source 35'. ' and the high frequency from the high frequency dielectric energy source 33'.
is ionized into a gas plasma of 7,000 yen, thereby forming a second non-single crystal semiconductor layer of type I and made of Si on the first non-single crystal semiconductor layer on the substrate 31.
The film was formed to a thickness of Å.

Furthermore, in the third system, while the inside of the reactor 45'' is evacuated by the vacuum pump 36'', the above-mentioned The substrate 31 on which a P-type first non-single-crystal semiconductor layer and a P-type second non-single-crystal semiconductor layer are sequentially formed is placed with the shutter 44 temporarily open, and then the substrate 31 is exposed to a high-frequency energy source. Gas sources 40'', 41'' and 42'' are heated to a temperature of approximately 250°C by a heater as 35.
SiH ₄ , PH ₄ and N ₂ as semiconductor material gas, N-type impurity gas and carrier gas, respectively,
In the excitation chamber 32'' as a third gas, the reactor 4
5'' to the inside of the reactor 45 using a vacuum pump 36''.
while evacuating to maintain a pressure of 0.1Torr.
The flow rate ratio of SiH ₄ and PH ₄ is approximately 10 ppm,
and the third gas is exposed to heat from a radio frequency energy source 35'' and a radio frequency dielectric energy source 3.
3'' to form a third gas plasma, thereby causing the second gas on the substrate 31 to ionize into a third gas plasma.
A third non-single-crystal semiconductor layer having N type and made of Si was formed to a thickness of 200 Å on the non-single-crystal semiconductor layer.

In addition, in the fourth system, while the inside of the reactor 45 is evacuated by the vacuum pump 36, the above-mentioned P-type A substrate 31 on which a first non-single crystal semiconductor layer, a second type non-single crystal semiconductor layer, and a third N-type non-single crystal semiconductor layer are sequentially formed is placed with the shutter temporarily open; Then H ₂ and N ₂ from gas sources 40 and 42 respectively
is used as an inert gas in the excitation chamber 32, and the reaction furnace 45 is
ionizing the inert gas into a gas plasma by heat from a high frequency energy source 35 and high frequency from a high frequency dielectric energy source 33; As a result, the first, second, and third non-single crystal semiconductor layers on the substrate 31 were annealed.

Furthermore, a pre-evacuated reactor 4 of the fourth system
5, the above-mentioned substrate 31 on which the above-mentioned first, second and third non-single crystal semiconductor layers are sequentially formed.
is removed to the pre-evacuated outlet 59 by temporarily opening the shutter 44', and then
Then, it was brought to outside pressure and taken outside.

[Brief explanation of the drawing]

The figure is a schematic diagram showing an embodiment of an apparatus for forming a non-single crystal semiconductor layer according to the present invention.

Claims (1)

[Scope of Claims] 1. A first reactor in which a substrate is disposed for forming a first non-single crystal semiconductor layer having P type or N type thereon; a second non-single-crystalline semiconductor in communication with the first shutter means and having an I-type on the first non-single-crystalline semiconductor layer; a second reactor disposed for forming the layer; and a second reactor communicating with the second reactor via a second shutter means and forming the first and second non-single crystal semiconductor layers. a third reactor disposed to form a third non-single crystal semiconductor layer having P-type or N-type on the second non-single crystal semiconductor layer in which the substrate is present; A first semiconductor material gas containing a first semiconductor material gas forming the first non-single crystal semiconductor layer and a first impurity gas imparting P-type or N-type to the first non-single crystal semiconductor layer in the furnace. a first gas source connected to the first reactor via a first gas supply control means for introducing a gas into the second reactor; A second reactor connected to the second reactor via a second gas supply control means for introducing a second gas containing a second semiconductor material gas for forming a non-single crystal semiconductor layer. a gas source, a third semiconductor material gas for forming the third non-single crystal semiconductor layer, and a P-type or N-type gas for the third non-single crystal semiconductor layer in the third reactor; a third gas source connected to the third reactor via a third gas supply control means for introducing a third gas containing a third impurity gas; a first gas ionization means for ionizing the first gas introduced into the reactor into a first gas plasma; a second gas ionization means for ionizing the third gas introduced into the third reactor into a third gas plasma; and a third gas ionization means for ionizing the third gas introduced into the third reactor into a third gas plasma. and, in the first reactor, on the substrate, the first
flowing the first gas plasma and maintaining the inside of the first reactor at a pressure of 1 atmosphere or less in order to deposit a first semiconductor material forming a non-single crystal semiconductor layer; a first gas exhaust means connected to the first reactor; and forming the second non-single crystal semiconductor layer on the first non-single crystal semiconductor layer in the second reactor. connected to the second reactor for flowing the second gas plasma and maintaining the inside of the second reactor at a pressure of 1 atmosphere or less in order to deposit a second semiconductor material; depositing a third semiconductor material forming the third non-single crystal semiconductor layer on the second non-single crystal semiconductor layer in the third reactor; a third gas discharge connected to the third reactor for flowing the third gas plasma and maintaining the pressure in the third reactor at a pressure of 1 atmosphere or less; means; and in the first, second and third reactors,
The temperature of the substrate is set to a temperature higher than that at which the first, second, and third semiconductor materials are monocrystalized on the substrate, the first non-single crystal semiconductor layer, and the second non-single crystal semiconductor layer. and means for maintaining the temperature at a low temperature.