JPS6421968A - Vertical type mosfet device and manufacture thereof - Google Patents

Vertical type mosfet device and manufacture thereof

Info

Publication number
JPS6421968A
JPS6421968A JP62177280A JP17728087A JPS6421968A JP S6421968 A JPS6421968 A JP S6421968A JP 62177280 A JP62177280 A JP 62177280A JP 17728087 A JP17728087 A JP 17728087A JP S6421968 A JPS6421968 A JP S6421968A
Authority
JP
Japan
Prior art keywords
layer
poly
groove
conductivity type
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62177280A
Other languages
Japanese (ja)
Inventor
Hirohisa Kitaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP62177280A priority Critical patent/JPS6421968A/en
Publication of JPS6421968A publication Critical patent/JPS6421968A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

PURPOSE:To reduce the resistance of a gate poly Si layer as a surface step is made small, to lessen a time constant and to make it possible to improve high-frequency characteristics by a method wherein a first poly Si layer is formed on the surface of a semiconductor substrate and the inner wall of a groove and moreover, a second poly Si layer, to which the first poly Si layer is connected electrically, is formed in the groove. CONSTITUTION:A second conductivity type first impurity diffuses layer 13 is formed on the surface parts of first conductivity type semiconductor substrates 11 and 12 and a first conductivity type second impurity diffused layer 14 is formed shallowly in the layer 13. A groove 15, which penetrates the layer 14 and the above layer 13 and reaches to the substrate part 12, is formed in part of the layer 14 and a gate oxide film layer 16 and a first poly Si layer 17 are formed on the inner wall of the groove 15 and the surface of the substrate 12. Moreover, a second poly Si layer 20, which is connected electrically with the above layer 17 and constitutes a gate poly Si layer along with the layer 17, is formed in the groove 15 in such a way as to fill the groove 15.
JP62177280A 1987-07-17 1987-07-17 Vertical type mosfet device and manufacture thereof Pending JPS6421968A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62177280A JPS6421968A (en) 1987-07-17 1987-07-17 Vertical type mosfet device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62177280A JPS6421968A (en) 1987-07-17 1987-07-17 Vertical type mosfet device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6421968A true JPS6421968A (en) 1989-01-25

Family

ID=16028282

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62177280A Pending JPS6421968A (en) 1987-07-17 1987-07-17 Vertical type mosfet device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6421968A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302846A (en) * 1990-06-04 1994-04-12 Canon Kabushiki Kaisha Semiconductor device having improved vertical insulated gate type transistor
US12154966B2 (en) 2021-04-15 2024-11-26 Kabushiki Kaisha Toshiba Semiconductor device that includes a conductive member and an electrode and method for manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302846A (en) * 1990-06-04 1994-04-12 Canon Kabushiki Kaisha Semiconductor device having improved vertical insulated gate type transistor
US12154966B2 (en) 2021-04-15 2024-11-26 Kabushiki Kaisha Toshiba Semiconductor device that includes a conductive member and an electrode and method for manufacturing the same

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