JPS6468959A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6468959A
JPS6468959A JP62227411A JP22741187A JPS6468959A JP S6468959 A JPS6468959 A JP S6468959A JP 62227411 A JP62227411 A JP 62227411A JP 22741187 A JP22741187 A JP 22741187A JP S6468959 A JPS6468959 A JP S6468959A
Authority
JP
Japan
Prior art keywords
wiring layer
layer
resistance
film
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62227411A
Other languages
Japanese (ja)
Inventor
Hiroaki Akiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62227411A priority Critical patent/JPS6468959A/en
Publication of JPS6468959A publication Critical patent/JPS6468959A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To obtain the semiconductor device provided with a polycrystalline element of fine structure in which current capacity is not subjected to direct restriction by a method wherein a low resistance wiring layer and a high resistant resistance element layer are formed in one body. CONSTITUTION:The title semiconductor device is composed of a driving transistor, consisting of a P-type silicon substrate 1, a field insulating film 2, N<+> diffusion layer regions 3 and 4, a gate oxide film 5, and a polycrystalline silicon gate 6, and a polycrystalline silicon resistance element layer 9, which will be formed on the polycrystalline silicon electrode 6 through the intermediaries of insulative oxide films 7 and 8 and a polycrystalline wiring layer 10, is formed into a thin film and also into the state of high resistance by the thermally oxided film 12 selectively formed on the surface of the layer 9, and the wiring layer 10 is brought into the state of low resistance. As the resistance element 9 is thinly formed in a completely independent manner irrespective of the film thickness of the wiring layer 10 which is integrally formed with the element 9, the resistance element 9 can be provided at a very high resistance without directly restricting the current capacity of the wiring layer.
JP62227411A 1987-09-09 1987-09-09 Semiconductor device Pending JPS6468959A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62227411A JPS6468959A (en) 1987-09-09 1987-09-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62227411A JPS6468959A (en) 1987-09-09 1987-09-09 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6468959A true JPS6468959A (en) 1989-03-15

Family

ID=16860418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62227411A Pending JPS6468959A (en) 1987-09-09 1987-09-09 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6468959A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0359571U (en) * 1989-10-13 1991-06-12

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235554A (en) * 1985-08-08 1987-02-16 Sharp Corp Semiconductor device and manufacture thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235554A (en) * 1985-08-08 1987-02-16 Sharp Corp Semiconductor device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0359571U (en) * 1989-10-13 1991-06-12

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