JPS6421973A - Device for manufacturing superconductive material - Google Patents
Device for manufacturing superconductive materialInfo
- Publication number
- JPS6421973A JPS6421973A JP62179636A JP17963687A JPS6421973A JP S6421973 A JPS6421973 A JP S6421973A JP 62179636 A JP62179636 A JP 62179636A JP 17963687 A JP17963687 A JP 17963687A JP S6421973 A JPS6421973 A JP S6421973A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- source
- oxide
- holder
- another
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 238000001704 evaporation Methods 0.000 abstract 3
- 230000008020 evaporation Effects 0.000 abstract 3
- 238000010894 electron beam technology Methods 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 abstract 1
- 239000005751 Copper oxide Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 229910000431 copper oxide Inorganic materials 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000011224 oxide ceramic Substances 0.000 abstract 1
- 229910052574 oxide ceramic Inorganic materials 0.000 abstract 1
- 238000005192 partition Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
PURPOSE:To obtain a device, by which an oxide ceramic superconducting thin film can be manufactured with high reproducibility and easily, by a method wherein a plurality of evaporation sources different from one another and an oxygen ion source are disposed in an array on the bottom part of a vacuum chamber and a substrate is contrived so as to pass through in order over them and the like. CONSTITUTION:A plurality of evaporation source 1-3 different from one another and an oxygen ion source 4 are disposed in an array on the bottom part of a vacuum chamber 10 and moreover, the upper part of the chamber 10 is provided with a substrate holder 6 and a substrate 8 is mounted to the lower surface of the holder 6. The holder 6 is constituted in a movable design in such a way that the substrate 8 passes through in order over the above sources 1-3 and source 4 and moreover, the above sources 1-3 and source 4 are partitioned from one another by partitions 5. For example, the above evaporation sources 1-3 are constituted in such a way that an electron beam from an electron beam irradiating unit 14 is scanned and a group IIIa metal and/or its oxide, a group IIa metal and/or its oxide and copper and/or a copper oxide are respectively evaporated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62179636A JPS6421973A (en) | 1987-07-16 | 1987-07-16 | Device for manufacturing superconductive material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62179636A JPS6421973A (en) | 1987-07-16 | 1987-07-16 | Device for manufacturing superconductive material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6421973A true JPS6421973A (en) | 1989-01-25 |
Family
ID=16069229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62179636A Pending JPS6421973A (en) | 1987-07-16 | 1987-07-16 | Device for manufacturing superconductive material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6421973A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5158931A (en) * | 1988-03-16 | 1992-10-27 | Kabushiki Kaisha Toshiba | Method for manufacturing an oxide superconductor thin film |
| JP2000503351A (en) * | 1996-11-01 | 2000-03-21 | テファ デュンシヒトテヒニク ゲーエムベーハー | Equipment for manufacturing thin oxide coatings |
| JP2003522831A (en) * | 2000-02-09 | 2003-07-29 | コンダクタス，インコーポレイテッド | Apparatus and method for thin film deposition |
| JP2009518537A (en) * | 2005-12-02 | 2009-05-07 | スーパーコンダクター テクノロジーズ，インク． | High throughput deposition system for growing oxide thin films by reactive co-evaporation |
| JP2010106339A (en) * | 2008-10-31 | 2010-05-13 | Shincron:Kk | Film deposition method and film deposition apparatus |
| WO2013047605A1 (en) * | 2011-09-30 | 2013-04-04 | 株式会社シンクロン | Film formation method and film formation apparatus |
| JP5638147B2 (en) * | 2011-09-30 | 2014-12-10 | 株式会社シンクロン | Film forming method and film forming apparatus |
| CN113493899A (en) * | 2020-04-06 | 2021-10-12 | Tos株式会社 | Chamber separated type outer film growing device |
| US11434584B2 (en) * | 2020-03-16 | 2022-09-06 | T.O.S Co., Ltd. | Apparatus for growing single crystal metal-oxide EPI wafer |
-
1987
- 1987-07-16 JP JP62179636A patent/JPS6421973A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5158931A (en) * | 1988-03-16 | 1992-10-27 | Kabushiki Kaisha Toshiba | Method for manufacturing an oxide superconductor thin film |
| US5284824A (en) * | 1988-03-16 | 1994-02-08 | Kabushiki Kaisha Toshiba | Method for manufacturing an oxide superconductor thin film |
| JP2000503351A (en) * | 1996-11-01 | 2000-03-21 | テファ デュンシヒトテヒニク ゲーエムベーハー | Equipment for manufacturing thin oxide coatings |
| JP2003522831A (en) * | 2000-02-09 | 2003-07-29 | コンダクタス，インコーポレイテッド | Apparatus and method for thin film deposition |
| JP2009518537A (en) * | 2005-12-02 | 2009-05-07 | スーパーコンダクター テクノロジーズ，インク． | High throughput deposition system for growing oxide thin films by reactive co-evaporation |
| JP2010106339A (en) * | 2008-10-31 | 2010-05-13 | Shincron:Kk | Film deposition method and film deposition apparatus |
| WO2013047605A1 (en) * | 2011-09-30 | 2013-04-04 | 株式会社シンクロン | Film formation method and film formation apparatus |
| JP5638147B2 (en) * | 2011-09-30 | 2014-12-10 | 株式会社シンクロン | Film forming method and film forming apparatus |
| US11434584B2 (en) * | 2020-03-16 | 2022-09-06 | T.O.S Co., Ltd. | Apparatus for growing single crystal metal-oxide EPI wafer |
| CN113493899A (en) * | 2020-04-06 | 2021-10-12 | Tos株式会社 | Chamber separated type outer film growing device |
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