JPS6451683A - Formation of superconducting thin film - Google Patents
Formation of superconducting thin filmInfo
- Publication number
- JPS6451683A JPS6451683A JP62208885A JP20888587A JPS6451683A JP S6451683 A JPS6451683 A JP S6451683A JP 62208885 A JP62208885 A JP 62208885A JP 20888587 A JP20888587 A JP 20888587A JP S6451683 A JPS6451683 A JP S6451683A
- Authority
- JP
- Japan
- Prior art keywords
- cell
- oxygen
- vapor
- thin film
- mgo substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 3
- 239000001301 oxygen Substances 0.000 abstract 3
- 229910052760 oxygen Inorganic materials 0.000 abstract 3
- 230000008020 evaporation Effects 0.000 abstract 2
- 238000001704 evaporation Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical class O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0381—Processes for depositing or forming copper oxide superconductor layers by evaporation, e.g. MBE
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
PURPOSE:To obtain a thin film of oxide superconducting material having almost perfect crystal structure without lack of oxygen, by a method wherein, in the order of layers parallel to a specified crystal face in a presumed crystal structure of an oxide superconducting material, the vapor of elements constituting said layers is made to collide with a substrate. CONSTITUTION:In a vacuum vessel 1, a cell 2a for Y, a cell 2b for Cu, and a cell 2c for Ba as evaporation sources of each constitution element are arranged, and an MgO substrate 4 fixed on a turn table 3 is installed on the evaporation sources. In the insides of the cell 2b for Cu and the cell 2c for Ba, oxygen introducing capillaries 9b, 9c are introduced from the respective bottoms. By heating each cell, the evaporated vapor of each element independently collides with the MgO substrate 4 and is deposited. In this process, the turn table 3 is rotated in such a manner as to control the time when the MgO substrate 4 stays above each of the cells. Further, by adjusting the amount of activated oxygen gas to be introduced into the vapor of Ba and Cu, the amount of oxygen in the film can be regulated in the course of film growth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62208885A JP2547784B2 (en) | 1987-08-22 | 1987-08-22 | Method of forming superconducting thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62208885A JP2547784B2 (en) | 1987-08-22 | 1987-08-22 | Method of forming superconducting thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6451683A true JPS6451683A (en) | 1989-02-27 |
| JP2547784B2 JP2547784B2 (en) | 1996-10-23 |
Family
ID=16563730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62208885A Expired - Lifetime JP2547784B2 (en) | 1987-08-22 | 1987-08-22 | Method of forming superconducting thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2547784B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01303770A (en) * | 1988-06-01 | 1989-12-07 | Oki Electric Ind Co Ltd | Manufacture of superconductive base transistor |
| JP2000503351A (en) * | 1996-11-01 | 2000-03-21 | テファ デュンシヒトテヒニク ゲーエムベーハー | Equipment for manufacturing thin oxide coatings |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63261627A (en) * | 1987-04-20 | 1988-10-28 | Nissin Electric Co Ltd | Method for manufacturing superconducting thin film |
-
1987
- 1987-08-22 JP JP62208885A patent/JP2547784B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63261627A (en) * | 1987-04-20 | 1988-10-28 | Nissin Electric Co Ltd | Method for manufacturing superconducting thin film |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01303770A (en) * | 1988-06-01 | 1989-12-07 | Oki Electric Ind Co Ltd | Manufacture of superconductive base transistor |
| JP2000503351A (en) * | 1996-11-01 | 2000-03-21 | テファ デュンシヒトテヒニク ゲーエムベーハー | Equipment for manufacturing thin oxide coatings |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2547784B2 (en) | 1996-10-23 |
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