JPS642320A - Formation of electrode - Google Patents
Formation of electrodeInfo
- Publication number
- JPS642320A JPS642320A JP15717087A JP15717087A JPS642320A JP S642320 A JPS642320 A JP S642320A JP 15717087 A JP15717087 A JP 15717087A JP 15717087 A JP15717087 A JP 15717087A JP S642320 A JPS642320 A JP S642320A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- deposited
- gate electrode
- sintering
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000000463 material Substances 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 7
- 238000005245 sintering Methods 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 230000007850 degeneration Effects 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To prevent the deterioration and degeneration of a device and to obtain excellent Schottky characteristics by a method wherein a sintering operation is conducted when a sintering material only is deposited on a substrate.
CONSTITUTION: An insulating layer 11 is formed on a GaAs substrate 10, the insulating layer 11 located on the position where a gate electrode part was formed is removed, and a gate pattern 12 is formed. A sintering material 14 consisting of Ti and the like is deposited on and adhered to the substrate 10, and when the substrate is heated up from the side of the material 14 using an electron beam, the material 14 is sintered in the substrate 10. Then, an electrode surface material 15 is deposited on and adhered to the substrate 10 on which the material 14 is deposited. Subsequently, for the substrate 10, the part corresponding to the gate electrode part is covered by a photoresist 16, an Ar ion beam 17 is made to irradiate from the side of the resist 16, unnecessary materials 14 and 15 are removed, the resist 16 is also removed, and a gate electrode 18 is formed.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62-157170A JPH012320A (en) | 1987-06-24 | How to make electrodes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62-157170A JPH012320A (en) | 1987-06-24 | How to make electrodes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS642320A true JPS642320A (en) | 1989-01-06 |
| JPH012320A JPH012320A (en) | 1989-01-06 |
Family
ID=
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5387548A (en) * | 1992-06-22 | 1995-02-07 | Motorola, Inc. | Method of forming an etched ohmic contact |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5387548A (en) * | 1992-06-22 | 1995-02-07 | Motorola, Inc. | Method of forming an etched ohmic contact |
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