JPS642365A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS642365A
JPS642365A JP62158232A JP15823287A JPS642365A JP S642365 A JPS642365 A JP S642365A JP 62158232 A JP62158232 A JP 62158232A JP 15823287 A JP15823287 A JP 15823287A JP S642365 A JPS642365 A JP S642365A
Authority
JP
Japan
Prior art keywords
poly
film
ions
insulating film
deposited onto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62158232A
Other languages
Japanese (ja)
Other versions
JPH012365A (en
Inventor
Keiichi Kagawa
Fujimitsu Shinomiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62158232A priority Critical patent/JPS642365A/en
Publication of JPH012365A publication Critical patent/JPH012365A/en
Publication of JPS642365A publication Critical patent/JPS642365A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To prevent recrystallization due to heat treatment, and to increase the breakdown strength of a gate insulating film by implanting Si ions to poly Si deposited onto the gate insulating film.
CONSTITUTION: A thick field oxide film 2 and a thin gate oxide film 3 are formed onto an Si substrate 1. Poly Si 4 is deposited onto the whole surface Si+ ions are implanted. Phosphorus glass is deposited onto Si 4, and phosphorus is introduced in high concentration through thermal diffusion. A phosphorus glass layer is removed, the low-resistance poly Si 6 is shaped as a gate or the specified pattern of a wiring, and an inter-layer insulating film 7 is deposited. A contact window 8 is bored to Si 6. An Al wiring 9 is conducted. Accordingly, crystal grain boundaries are decreased by implanting Si+ ions to poly Si 4, a more uniform excellent poly Si film is formed, and the equal poly Si film can also be maintained after heat treatment, thus preventing the lowering of the breakdown strength of the film 3 due to a poly Si-Al film.
COPYRIGHT: (C)1989,JPO&Japio
JP62158232A 1987-06-25 1987-06-25 Manufacture of semiconductor device Pending JPS642365A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62158232A JPS642365A (en) 1987-06-25 1987-06-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62158232A JPS642365A (en) 1987-06-25 1987-06-25 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPH012365A JPH012365A (en) 1989-01-06
JPS642365A true JPS642365A (en) 1989-01-06

Family

ID=15667164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62158232A Pending JPS642365A (en) 1987-06-25 1987-06-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS642365A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04295303A (en) * 1991-03-25 1992-10-20 Takara Belmont Co Ltd Shampoo bowl washing device in shampoo apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04295303A (en) * 1991-03-25 1992-10-20 Takara Belmont Co Ltd Shampoo bowl washing device in shampoo apparatus

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