JPS642376A - Photosensor - Google Patents

Photosensor

Info

Publication number
JPS642376A
JPS642376A JP62159122A JP15912287A JPS642376A JP S642376 A JPS642376 A JP S642376A JP 62159122 A JP62159122 A JP 62159122A JP 15912287 A JP15912287 A JP 15912287A JP S642376 A JPS642376 A JP S642376A
Authority
JP
Japan
Prior art keywords
film
semiconductor thin
capacitor
type semiconductor
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62159122A
Other languages
English (en)
Other versions
JPH012376A (ja
Inventor
Toshiichi Maekawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP62159122A priority Critical patent/JPS642376A/ja
Priority to KR1019880006419A priority patent/KR970004849B1/ko
Priority to DE3889587T priority patent/DE3889587T2/de
Priority to EP88305014A priority patent/EP0296725B1/en
Priority to CA000569381A priority patent/CA1295402C/en
Publication of JPH012376A publication Critical patent/JPH012376A/ja
Publication of JPS642376A publication Critical patent/JPS642376A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H10F30/2235—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier the devices comprising Group IV amorphous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP62159122A 1987-06-25 1987-06-25 Photosensor Pending JPS642376A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP62159122A JPS642376A (en) 1987-06-25 1987-06-25 Photosensor
KR1019880006419A KR970004849B1 (ko) 1987-06-25 1988-05-31 포토센서
DE3889587T DE3889587T2 (de) 1987-06-25 1988-06-01 Photodetektoren.
EP88305014A EP0296725B1 (en) 1987-06-25 1988-06-01 Photosensors
CA000569381A CA1295402C (en) 1987-06-25 1988-06-14 Photosensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62159122A JPS642376A (en) 1987-06-25 1987-06-25 Photosensor

Publications (2)

Publication Number Publication Date
JPH012376A JPH012376A (ja) 1989-01-06
JPS642376A true JPS642376A (en) 1989-01-06

Family

ID=15686716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62159122A Pending JPS642376A (en) 1987-06-25 1987-06-25 Photosensor

Country Status (5)

Country Link
EP (1) EP0296725B1 (ja)
JP (1) JPS642376A (ja)
KR (1) KR970004849B1 (ja)
CA (1) CA1295402C (ja)
DE (1) DE3889587T2 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002176162A (ja) * 2000-08-10 2002-06-21 Semiconductor Energy Lab Co Ltd エリアセンサ及びエリアセンサを備えた表示装置
JP2008171871A (ja) * 2007-01-09 2008-07-24 Hitachi Displays Ltd 高感度光センサ素子及びそれを用いた光センサ装置
US8058699B2 (en) 2000-08-10 2011-11-15 Semiconductor Energy Laboratory Co., Ltd. Area sensor and display apparatus provided with an area sensor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03289759A (ja) * 1990-03-08 1991-12-19 Toshiba Corp 半導体装置
KR101189268B1 (ko) 2005-03-08 2012-10-09 삼성디스플레이 주식회사 액정 표시 장치용 박막 표시판 및 구동 장치와 이를 포함하는 액정 표시 장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0162307A3 (en) * 1984-04-24 1988-07-27 Hitachi, Ltd. Image sensor and method of manufacturing same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002176162A (ja) * 2000-08-10 2002-06-21 Semiconductor Energy Lab Co Ltd エリアセンサ及びエリアセンサを備えた表示装置
US8058699B2 (en) 2000-08-10 2011-11-15 Semiconductor Energy Laboratory Co., Ltd. Area sensor and display apparatus provided with an area sensor
US8378443B2 (en) 2000-08-10 2013-02-19 Semiconductor Energy Laboratory Co., Ltd. Area sensor and display apparatus provided with an area sensor
US9082677B2 (en) 2000-08-10 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Area sensor and display apparatus provided with an area sensor
US9337243B2 (en) 2000-08-10 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Area sensor and display apparatus provided with an area sensor
US9711582B2 (en) 2000-08-10 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Area sensor and display apparatus provided with an area sensor
US9941343B2 (en) 2000-08-10 2018-04-10 Semiconductor Energy Laboratory Co., Ltd. Area sensor and display apparatus provided with an area sensor
JP2008171871A (ja) * 2007-01-09 2008-07-24 Hitachi Displays Ltd 高感度光センサ素子及びそれを用いた光センサ装置

Also Published As

Publication number Publication date
CA1295402C (en) 1992-02-04
EP0296725A2 (en) 1988-12-28
DE3889587D1 (de) 1994-06-23
KR970004849B1 (ko) 1997-04-04
EP0296725B1 (en) 1994-05-18
KR890001206A (ko) 1989-03-18
DE3889587T2 (de) 1994-09-01
EP0296725A3 (en) 1989-10-18

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