JPS577968A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS577968A
JPS577968A JP8209580A JP8209580A JPS577968A JP S577968 A JPS577968 A JP S577968A JP 8209580 A JP8209580 A JP 8209580A JP 8209580 A JP8209580 A JP 8209580A JP S577968 A JPS577968 A JP S577968A
Authority
JP
Japan
Prior art keywords
silicon
oxide film
high concentration
diffusion layers
oxide films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8209580A
Other languages
Japanese (ja)
Inventor
Masae Oota
Kenichi Kuroishi
Yoshihisa Furuya
Goichi Okamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP8209580A priority Critical patent/JPS577968A/en
Publication of JPS577968A publication Critical patent/JPS577968A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain stable yield of a semiconductor device by a method wherein silicon oxide films, etc., for a gate oxide film or a dielectric layer of the capacitor element of a P channel MOS transistor are formed with single crystal silicon and polycrystalline silicon. CONSTITUTION:High concentration boron diffusion layers 32a, 32b are formed on an N type silicon substrate 31, and field oxide films 33a, 33b are formed on the high concentration boron diffusion layers 32a, 32b and N type silicon substrate 31. The silicon oxide film 34 obtained by oxidizing single crystal silicon is formed on the N type silicon substrate 31 and the high concentration boron diffusion layers 32a, 32b between the field oxide film 33a, 33b. Moreover the silicon oxide films 35 obtained by oxidizing polycrystalline silicon are formed on the silicon oxide film 34 and field oxide films 33a, 33b. A gate electrode 36 of the P channel MOS transistor is formed on the silicon oxide film 35.
JP8209580A 1980-06-19 1980-06-19 Semiconductor device Pending JPS577968A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8209580A JPS577968A (en) 1980-06-19 1980-06-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8209580A JPS577968A (en) 1980-06-19 1980-06-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS577968A true JPS577968A (en) 1982-01-16

Family

ID=13764860

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8209580A Pending JPS577968A (en) 1980-06-19 1980-06-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS577968A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59174418A (en) * 1983-03-17 1984-10-02 日魯工業株式会社 Packing band type packer
JPS644281U (en) * 1987-06-30 1989-01-11

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59174418A (en) * 1983-03-17 1984-10-02 日魯工業株式会社 Packing band type packer
JPS644281U (en) * 1987-06-30 1989-01-11

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