JPS6426187A - Core structure of nuclear reactor - Google Patents

Core structure of nuclear reactor

Info

Publication number
JPS6426187A
JPS6426187A JP63168747A JP16874788A JPS6426187A JP S6426187 A JPS6426187 A JP S6426187A JP 63168747 A JP63168747 A JP 63168747A JP 16874788 A JP16874788 A JP 16874788A JP S6426187 A JPS6426187 A JP S6426187A
Authority
JP
Japan
Prior art keywords
core
fuel cells
fuel
reactor
contg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63168747A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0432355B2 (fr
Inventor
Sadao Uchikawa
Motomasa Fuse
Yasuhiro Kobayashi
Renzo Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP63168747A priority Critical patent/JPS6426187A/ja
Publication of JPS6426187A publication Critical patent/JPS6426187A/ja
Publication of JPH0432355B2 publication Critical patent/JPH0432355B2/ja
Granted legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E30/00Energy generation of nuclear origin
    • Y02E30/30Nuclear fission reactors

Landscapes

  • Fuel Cell (AREA)
JP63168747A 1988-07-08 1988-07-08 Core structure of nuclear reactor Granted JPS6426187A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63168747A JPS6426187A (en) 1988-07-08 1988-07-08 Core structure of nuclear reactor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63168747A JPS6426187A (en) 1988-07-08 1988-07-08 Core structure of nuclear reactor

Publications (2)

Publication Number Publication Date
JPS6426187A true JPS6426187A (en) 1989-01-27
JPH0432355B2 JPH0432355B2 (fr) 1992-05-29

Family

ID=15873671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63168747A Granted JPS6426187A (en) 1988-07-08 1988-07-08 Core structure of nuclear reactor

Country Status (1)

Country Link
JP (1) JPS6426187A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0792288A (ja) * 1993-09-27 1995-04-07 Toshiba Corp 沸騰水型原子炉の炉心及びその運転方法
US5602405A (en) * 1994-09-05 1997-02-11 Ngk Insulators, Ltd. Semiconductor device with base formed by the junction of two semiconductors of the same conductive type
US5648665A (en) * 1994-04-28 1997-07-15 Ngk Insulators, Ltd. Semiconductor device having a plurality of cavity defined gating regions and a fabrication method therefor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS548289A (en) * 1977-06-20 1979-01-22 Hitachi Ltd Reactor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS548289A (en) * 1977-06-20 1979-01-22 Hitachi Ltd Reactor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0792288A (ja) * 1993-09-27 1995-04-07 Toshiba Corp 沸騰水型原子炉の炉心及びその運転方法
US5648665A (en) * 1994-04-28 1997-07-15 Ngk Insulators, Ltd. Semiconductor device having a plurality of cavity defined gating regions and a fabrication method therefor
US5930651A (en) * 1994-04-28 1999-07-27 Ngk Insulators, Ltd. Method of forming a semiconductor device having a plurality of cavity defined gating regions
US5602405A (en) * 1994-09-05 1997-02-11 Ngk Insulators, Ltd. Semiconductor device with base formed by the junction of two semiconductors of the same conductive type

Also Published As

Publication number Publication date
JPH0432355B2 (fr) 1992-05-29

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