JPS6427244A - Wiring construction of integrated circuit - Google Patents
Wiring construction of integrated circuitInfo
- Publication number
- JPS6427244A JPS6427244A JP63085024A JP8502488A JPS6427244A JP S6427244 A JPS6427244 A JP S6427244A JP 63085024 A JP63085024 A JP 63085024A JP 8502488 A JP8502488 A JP 8502488A JP S6427244 A JPS6427244 A JP S6427244A
- Authority
- JP
- Japan
- Prior art keywords
- superconductive
- wiring
- circuit
- temperature
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010276 construction Methods 0.000 title 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 4
- 230000015556 catabolic process Effects 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 2
- 239000007769 metal material Substances 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052761 rare earth metal Inorganic materials 0.000 abstract 1
- 230000008054 signal transmission Effects 0.000 abstract 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent breakdown of superconductive status due to heat generated from a circuit element by forming a metal material layer with improved heat conductivity which is located next to at least single face of superconductive wiring layer formed by a superconductive material or through another layer. CONSTITUTION:It is desirable to use a high-temperature superconductive material which indicates superconductivity at liquid nitrogen temperature or greater as a superconductive material such as copper, oxygen, and alkaline earth and four-element chemical compound consisting of two elements within rare earth elements. Also, it is desirable to use Cu, Al, etc., as metal materials of high heat conductivity. The integrated circuit uses a superconductive material with a superconductive critical temperature Tc which is equal to the liquid nitrogen temperature or greater for signal wire. As far as the circuit is operated below Tc, the signal transmission delay due to wiring can be made to be 0. Also, since heat generated by circuit operation is dissipated through a metal layer 8 before flowing into a superconductive wiring 7, breakdown of superconductive status due to the generated heat can be prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63085024A JPS6427244A (en) | 1987-04-08 | 1988-04-08 | Wiring construction of integrated circuit |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8474187 | 1987-04-08 | ||
| JP63085024A JPS6427244A (en) | 1987-04-08 | 1988-04-08 | Wiring construction of integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6427244A true JPS6427244A (en) | 1989-01-30 |
Family
ID=26425727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63085024A Pending JPS6427244A (en) | 1987-04-08 | 1988-04-08 | Wiring construction of integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6427244A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6445143A (en) * | 1987-08-13 | 1989-02-17 | Semiconductor Energy Lab | Superconducting device |
| JPS6445146A (en) * | 1987-08-13 | 1989-02-17 | Semiconductor Energy Lab | Manufacture of superconducting device |
| JPS6445144A (en) * | 1987-08-13 | 1989-02-17 | Semiconductor Energy Lab | Manufacture of superconducting device |
| JPS6445145A (en) * | 1987-08-13 | 1989-02-17 | Semiconductor Energy Lab | Superconducting device |
| JPS6461931A (en) * | 1987-09-02 | 1989-03-08 | Toshiba Corp | Semiconductor device |
| JPH0199242A (en) * | 1987-09-09 | 1989-04-18 | American Teleph & Telegr Co <Att> | Semiconductor device having mutual connection of superconductor |
| JPH01123438A (en) * | 1987-11-07 | 1989-05-16 | Mitsubishi Electric Corp | Superconducting wiring integrated circuit |
| JPH01218045A (en) * | 1988-02-26 | 1989-08-31 | Nec Corp | Semiconductor device |
-
1988
- 1988-04-08 JP JP63085024A patent/JPS6427244A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6445143A (en) * | 1987-08-13 | 1989-02-17 | Semiconductor Energy Lab | Superconducting device |
| JPS6445146A (en) * | 1987-08-13 | 1989-02-17 | Semiconductor Energy Lab | Manufacture of superconducting device |
| JPS6445144A (en) * | 1987-08-13 | 1989-02-17 | Semiconductor Energy Lab | Manufacture of superconducting device |
| JPS6445145A (en) * | 1987-08-13 | 1989-02-17 | Semiconductor Energy Lab | Superconducting device |
| JPS6461931A (en) * | 1987-09-02 | 1989-03-08 | Toshiba Corp | Semiconductor device |
| JPH0199242A (en) * | 1987-09-09 | 1989-04-18 | American Teleph & Telegr Co <Att> | Semiconductor device having mutual connection of superconductor |
| JPH01123438A (en) * | 1987-11-07 | 1989-05-16 | Mitsubishi Electric Corp | Superconducting wiring integrated circuit |
| JPH01218045A (en) * | 1988-02-26 | 1989-08-31 | Nec Corp | Semiconductor device |
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