JPS6427285A - Multi-wavelength integrated semiconductor laser - Google Patents
Multi-wavelength integrated semiconductor laserInfo
- Publication number
- JPS6427285A JPS6427285A JP18311287A JP18311287A JPS6427285A JP S6427285 A JPS6427285 A JP S6427285A JP 18311287 A JP18311287 A JP 18311287A JP 18311287 A JP18311287 A JP 18311287A JP S6427285 A JPS6427285 A JP S6427285A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser elements
- well layers
- layers
- various
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 9
- 239000000203 mixture Substances 0.000 abstract 3
- 238000010276 construction Methods 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To enable various laser elements having different oscillation wavelengths to be integrated without incorporating diffraction gratings, by providing a plurality of semiconductor laser elements with quantum well layers as active layers thereof while differentiating their compositions of well layers from each other among the various laser elements. CONSTITUTION:In a semiconductor laser array device having two or more semiconductor laser elements formed on one and the same semiconductor substrate and capable of being driven independently from each other, active layers 104-107 of a plurality of semicon ductor laser elements are provided by quantum well layers while differentiating compositions of well layers thereof from each other among the various semiconductor laser elements. In this manner, it is possible to provide a multi-wavelength integrated semiconductor laser without the need of incorporating diffraction gratings but by such simple construction as to provide the various semiconductor laser elements with quantum well active layers whose compositions of well layers are different from each other among these laser elements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18311287A JPS6427285A (en) | 1987-07-22 | 1987-07-22 | Multi-wavelength integrated semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18311287A JPS6427285A (en) | 1987-07-22 | 1987-07-22 | Multi-wavelength integrated semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6427285A true JPS6427285A (en) | 1989-01-30 |
Family
ID=16129986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18311287A Pending JPS6427285A (en) | 1987-07-22 | 1987-07-22 | Multi-wavelength integrated semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6427285A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5157680A (en) * | 1989-11-08 | 1992-10-20 | Mitsubishi Denki Kabushiki Kaisha | Integrated semiconductor laser |
| JPH05335690A (en) * | 1992-06-01 | 1993-12-17 | Sumitomo Electric Ind Ltd | Semiconductor device and manufacturing method thereof |
-
1987
- 1987-07-22 JP JP18311287A patent/JPS6427285A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5157680A (en) * | 1989-11-08 | 1992-10-20 | Mitsubishi Denki Kabushiki Kaisha | Integrated semiconductor laser |
| JPH05335690A (en) * | 1992-06-01 | 1993-12-17 | Sumitomo Electric Ind Ltd | Semiconductor device and manufacturing method thereof |
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