JPS5296865A - Crystal grown unit for chemical compound semiconductor - Google Patents
Crystal grown unit for chemical compound semiconductorInfo
- Publication number
- JPS5296865A JPS5296865A JP1112276A JP1112276A JPS5296865A JP S5296865 A JPS5296865 A JP S5296865A JP 1112276 A JP1112276 A JP 1112276A JP 1112276 A JP1112276 A JP 1112276A JP S5296865 A JPS5296865 A JP S5296865A
- Authority
- JP
- Japan
- Prior art keywords
- unit
- compound semiconductor
- chemical compound
- crystal grown
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To make grown a plural number of chemical compound semiconductor epitaxial layers having different nature each other in the same grown unit.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1112276A JPS5296865A (en) | 1976-02-04 | 1976-02-04 | Crystal grown unit for chemical compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1112276A JPS5296865A (en) | 1976-02-04 | 1976-02-04 | Crystal grown unit for chemical compound semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5296865A true JPS5296865A (en) | 1977-08-15 |
Family
ID=11769198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1112276A Pending JPS5296865A (en) | 1976-02-04 | 1976-02-04 | Crystal grown unit for chemical compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5296865A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5699843U (en) * | 1979-12-26 | 1981-08-06 | ||
| JPS57198619A (en) * | 1981-06-01 | 1982-12-06 | Fujitsu Ltd | Vapor growth of compound semiconductor |
| JPS57198620A (en) * | 1981-06-01 | 1982-12-06 | Fujitsu Ltd | Vapor growth of compound semiconductor |
| JPS58147027A (en) * | 1982-02-25 | 1983-09-01 | Mitsubishi Electric Corp | Preparation apparatus for semiconductor device |
| JPS61275194A (en) * | 1985-05-29 | 1986-12-05 | Nec Corp | Vapor-phase growth method for compound semiconductor |
| JPS62235724A (en) * | 1986-04-04 | 1987-10-15 | Mitsubishi Electric Corp | Mocvd device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3184348A (en) * | 1960-12-30 | 1965-05-18 | Ibm | Method for controlling doping in vaporgrown semiconductor bodies |
| JPS49110273A (en) * | 1973-02-20 | 1974-10-21 | ||
| JPS50108877A (en) * | 1974-01-10 | 1975-08-27 | ||
| US3925118A (en) * | 1971-04-15 | 1975-12-09 | Philips Corp | Method of depositing layers which mutually differ in composition onto a substrate |
-
1976
- 1976-02-04 JP JP1112276A patent/JPS5296865A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3184348A (en) * | 1960-12-30 | 1965-05-18 | Ibm | Method for controlling doping in vaporgrown semiconductor bodies |
| US3925118A (en) * | 1971-04-15 | 1975-12-09 | Philips Corp | Method of depositing layers which mutually differ in composition onto a substrate |
| JPS49110273A (en) * | 1973-02-20 | 1974-10-21 | ||
| JPS50108877A (en) * | 1974-01-10 | 1975-08-27 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5699843U (en) * | 1979-12-26 | 1981-08-06 | ||
| JPS57198619A (en) * | 1981-06-01 | 1982-12-06 | Fujitsu Ltd | Vapor growth of compound semiconductor |
| JPS57198620A (en) * | 1981-06-01 | 1982-12-06 | Fujitsu Ltd | Vapor growth of compound semiconductor |
| JPS58147027A (en) * | 1982-02-25 | 1983-09-01 | Mitsubishi Electric Corp | Preparation apparatus for semiconductor device |
| JPS61275194A (en) * | 1985-05-29 | 1986-12-05 | Nec Corp | Vapor-phase growth method for compound semiconductor |
| JPS62235724A (en) * | 1986-04-04 | 1987-10-15 | Mitsubishi Electric Corp | Mocvd device |
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