JPS6428952A - Solid-state image sensing device - Google Patents
Solid-state image sensing deviceInfo
- Publication number
- JPS6428952A JPS6428952A JP62185911A JP18591187A JPS6428952A JP S6428952 A JPS6428952 A JP S6428952A JP 62185911 A JP62185911 A JP 62185911A JP 18591187 A JP18591187 A JP 18591187A JP S6428952 A JPS6428952 A JP S6428952A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- state image
- image sensing
- cap
- ceramic container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 abstract 4
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000005546 reactive sputtering Methods 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To prevent an electrostatic breakdown of a solid-state image sensing device by a method wherein a transparent conductive film is formed on the surface of a transparent cap of the solid-state image sensing device or a cap composed of transparent semiconductor glass is used and this is connected electrically to an external lead in order to prevent an electric charge from being accumulated on the surface of the cap. CONSTITUTION:A solid-state image sensing element 4 is mounted on an element- mounting part of a package where an inner lead 2 pierces a wall of a ceramic container 1 and an external lead 3 installed at the outside of the ceramic container 1 is connected; an electrode of the solid-state image sensing element 4 is connected electrically to the inner lead 2 by using a metal wire 5. A transparent cap 8 composed of single-crystal sapphire installed on the surface of a transparent conductive film 7 composed of SnO2, CdO, In2O3, Bi2O3 or the like whose conductivity is 10<-5>-10<-3>OMEGA<-1>cm<-1> by a reactive sputtering method or a vacuum evaporation method is mounted on an upper end of the ceramic container 1 while a contact electrode 6 installed by being connected electrically to the external lead 3 is connected to the transparent conductive film 7; the ceramic container 1 is sealed by using low-melting-point glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62185911A JPS6428952A (en) | 1987-07-24 | 1987-07-24 | Solid-state image sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62185911A JPS6428952A (en) | 1987-07-24 | 1987-07-24 | Solid-state image sensing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6428952A true JPS6428952A (en) | 1989-01-31 |
Family
ID=16179037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62185911A Pending JPS6428952A (en) | 1987-07-24 | 1987-07-24 | Solid-state image sensing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6428952A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6439655U (en) * | 1987-09-01 | 1989-03-09 | ||
| US5150180A (en) * | 1990-06-15 | 1992-09-22 | Mitsubishi Denki Kabushiki Kaisha | Packaged semiconductor device with high energy radiation absorbent glass |
| US6239479B1 (en) * | 1995-04-03 | 2001-05-29 | Texas Instruments Incorporated | Thermal neutron shielded integrated circuits |
| US6274927B1 (en) * | 1999-06-03 | 2001-08-14 | Amkor Technology, Inc. | Plastic package for an optical integrated circuit device and method of making |
| JP2011004166A (en) * | 2009-06-18 | 2011-01-06 | Nikon Corp | Solid-state imaging apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS562818A (en) * | 1979-06-18 | 1981-01-13 | Mitsubishi Heavy Ind Ltd | Mist eliminator |
-
1987
- 1987-07-24 JP JP62185911A patent/JPS6428952A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS562818A (en) * | 1979-06-18 | 1981-01-13 | Mitsubishi Heavy Ind Ltd | Mist eliminator |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6439655U (en) * | 1987-09-01 | 1989-03-09 | ||
| US5150180A (en) * | 1990-06-15 | 1992-09-22 | Mitsubishi Denki Kabushiki Kaisha | Packaged semiconductor device with high energy radiation absorbent glass |
| US6239479B1 (en) * | 1995-04-03 | 2001-05-29 | Texas Instruments Incorporated | Thermal neutron shielded integrated circuits |
| US6274927B1 (en) * | 1999-06-03 | 2001-08-14 | Amkor Technology, Inc. | Plastic package for an optical integrated circuit device and method of making |
| US6420204B2 (en) | 1999-06-03 | 2002-07-16 | Amkor Technology, Inc. | Method of making a plastic package for an optical integrated circuit device |
| JP2011004166A (en) * | 2009-06-18 | 2011-01-06 | Nikon Corp | Solid-state imaging apparatus |
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