JPS6430252A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6430252A
JPS6430252A JP62186836A JP18683687A JPS6430252A JP S6430252 A JPS6430252 A JP S6430252A JP 62186836 A JP62186836 A JP 62186836A JP 18683687 A JP18683687 A JP 18683687A JP S6430252 A JPS6430252 A JP S6430252A
Authority
JP
Japan
Prior art keywords
accomplished
thin film
titanium
titanium oxide
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62186836A
Other languages
Japanese (ja)
Inventor
Masaaki Ikegami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62186836A priority Critical patent/JPS6430252A/en
Publication of JPS6430252A publication Critical patent/JPS6430252A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To realize a high-capacity element built of a dielectric material without reducing the degree of integration by a method wherein a titanium oxide film high in dielectric constant is used. CONSTITUTION:For example on a silicon substrate 1, an impurity diffusion layer 2 is formed, an insulating film 3 which is for example an oxide film is formed, patterning is accomplished by photolithography and etching, and then a titanium thin film 10 is formed by spattering. Next, the titanium thin film 10 is converted into a titanium oxide thin film 11, which is accomplished by thermal oxidation or lamp annealing or oxidizing ion implantation. A process follows wherein the titanium oxide thin film 11 is subjected to patterning, which is accomplished by photolithography or the like. Etching is accomplished for the formation of a capacitor, which is followed by the use of spattering or the like for the formation of an aluminum wiring for the completion of a semiconductor device of this design.
JP62186836A 1987-07-27 1987-07-27 Semiconductor device Pending JPS6430252A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62186836A JPS6430252A (en) 1987-07-27 1987-07-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62186836A JPS6430252A (en) 1987-07-27 1987-07-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6430252A true JPS6430252A (en) 1989-02-01

Family

ID=16195479

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62186836A Pending JPS6430252A (en) 1987-07-27 1987-07-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6430252A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5193800A (en) * 1991-04-08 1993-03-16 Seiko Epson Corporation Apparatus for conveying paper in a printer
EP0720213A3 (en) * 1994-12-28 1997-05-07 Matsushita Electronics Corp Integrated circuit capacitor and method of manufacturing the same
EP1628349A3 (en) * 2004-08-19 2008-01-23 Fujitsu Limited Mis capacitor and production method of mis capacitor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5193800A (en) * 1991-04-08 1993-03-16 Seiko Epson Corporation Apparatus for conveying paper in a printer
EP0720213A3 (en) * 1994-12-28 1997-05-07 Matsushita Electronics Corp Integrated circuit capacitor and method of manufacturing the same
EP0971393A1 (en) * 1994-12-28 2000-01-12 Matsushita Electronics Corporation Capacitor for integrated circuit and its fabrication method
EP1628349A3 (en) * 2004-08-19 2008-01-23 Fujitsu Limited Mis capacitor and production method of mis capacitor

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